Patents by Inventor Habib Hichri
Habib Hichri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20070007244Abstract: A system and method for detecting a loss of plasma confinement. The system includes a plasma chamber that includes a plasma space and a non-plasma space. A plasma apparatus generates a plasma within the plasma space. The non-plasma space surrounds the plasma space and is separated from the plasma space by a confinement barrier that is adapted to confine the plasma in the plasma space during performance of an operational process by the plasma on a substrate disposed within the plasma space. Plasma detectors distributed on bounding surfaces of the non-plasma space are adapted to detect plasma that has escaped from the plasma space during performance of the operational process. The operational process is performed while the plasma detectors are monitoring the non-plasma space for a presence of the escaped plasma in the non-plasma space. If the monitoring has detected the escaped plasma, then the operational process is aborted.Type: ApplicationFiled: July 5, 2005Publication date: January 11, 2007Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Habib Hichri, Kaushik Kumar, Helen Maynard
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Patent number: 7135398Abstract: An advanced back-end-of-line (BEOL) interconnect structure having a hybrid dielectric is disclosed. The inter-layer dielectric (ILD) for the via level is preferably different from the ILD for the line level. In a preferred embodiment, the via-level ILD is formed of a low-k SiCOH material, and the line-level ILD is formed of a low-k polymeric thermoset material.Type: GrantFiled: July 29, 2004Date of Patent: November 14, 2006Assignee: International Business Machines CorporationInventors: John A. Fitzsimmons, Stephen E. Greco, Jia Lee, Stephen M. Gates, Terry Spooner, Matthew S. Angyal, Habib Hichri, Theordorus E. Standaert, Glenn A. Biery
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Publication number: 20060190846Abstract: Stacked via pillars, such as metal via pillars, are provided at different and designated locations in IC chips to support the chip structure during processing and any related processing stresses such as thermal and mechanical stresses. These stacked via pillars connect and extend from a base substrate of the strip to a top oxide cap of the chip. The primary purpose of the stacked via pillars is to hold the chip structure together to accommodate any radial deformations and also to relieve any stress, thermal and/or mechanical, build-tip during processing or reliability testing. The stacked via pillars are generally not electrically connected to any active lines or vias, however in some embodiments the stacked via pillars can provide an additional function of providing an electrical connection in the chip.Type: ApplicationFiled: April 13, 2006Publication date: August 24, 2006Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Habib Hichri, Xiao Liu, Vincent McGahay, Conal Murray, Jawahar Nayak, Thomas Shaw
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Patent number: 7067902Abstract: Stacked via pillars, such as metal via pillars, are provided at different and designated locations in IC chips to support the chip structure during processing and any related processing stresses such as thermal and mechanical stresses. These stacked via pillars connect and extend from a base substrate of the strip to a top oxide cap of the chip. The primary purpose of the stacked via pillars is to hold the chip structure together to accommodate any radial deformations and also to relieve any stress, thermal and/or mechanical, build-up during processing or reliability testing. The stacked via pillars are generally not electrically connected to any active lines or vias, however in some embodiments the stacked via pillars can provide an additional function of providing an electrical connection in the chip.Type: GrantFiled: December 2, 2003Date of Patent: June 27, 2006Assignee: International Business Machines CorporationInventors: Habib Hichri, Xiao H. Liu, Vincent J. McGahay, Conal E. Murray, Jawahar P. Nayak, Thomas M. Shaw
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Patent number: 7009280Abstract: An interlevel dielectric layer (ILD) comprises a low-k dielectric layer; and a low-k dielectric film, deposited under compressive stress, atop the dielectric layer. The dielectric layer comprises a low-k material, such as an organosilicon glass (OSG) or a SiCOH material. The dielectric film has a thickness, which is 2%–10% of the thickness of the dielectric layer, has a similar chemical composition to the dielectric layer, but has a different morphology than the dielectric layer. The dielectric film is deposited under compressive stress, in situ, at or near the end of the dielectric layer deposition by altering a process that was used to deposit the low-k dielectric layer.Type: GrantFiled: April 28, 2004Date of Patent: March 7, 2006Assignee: International Business Machines CorporationInventors: Matthew Angyal, Edward Paul Barth, Sanjit Kumar Das, Charles Robert Davis, Habib Hichri, William Francis Landers, Jia Lee
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Publication number: 20060024961Abstract: Methods for sealing an organic ILD layer and a metal layer after an etching step. The method includes etching through an ILD layer and leaving a remaining portion of an underlying metal layer cap, maintaining the device in an inert gas, and depositing at least a portion of a liner into the opening to seal the ILD layer and the metal layer. Subsequent processing may include formation of a via by etching through the portion of the liner and the remaining portion of the cap layer, and depositing a metal.Type: ApplicationFiled: July 29, 2004Publication date: February 2, 2006Inventors: Matthew Angyal, Peter Biolsi, Lawrence Clevenger, Habib Hichri, Bernd Kastenmeier, Michael Lane, Jeffrey Marino, Vincent McGahay, Theodorus Standaert
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Publication number: 20050242414Abstract: An interlevel dielectric layer (ILD) comprises a low-k dielectric layer; and a low-k dielectric film, deposited under compressive stress, atop the dielectric layer. The dielectric layer comprises a low-k material, such as an organosilicon glass (OSG) or a SiCOH material. The dielectric film has a thickness, which is 2%-10% of the thickness of the dielectric layer, has a similar chemical composition to the dielectric layer, but has a different morphology than the dielectric layer. The dielectric film is deposited under compressive stress, in situ, at or near the end of the dielectric layer deposition by altering a process that was used to deposit the low-k dielectric layer.Type: ApplicationFiled: April 28, 2004Publication date: November 3, 2005Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Matthew Angyal, Edward Barth, Sanjit Das, Charles Davis, Habib Hichri, William Landers, Jia Lee
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Patent number: 6917108Abstract: An advanced back-end-of-line (BEOL) interconnect structure having a hybrid dielectric is disclosed. The inter-layer dielectric (ILD) for the via level is preferably different from the ILD for the line level. In a preferred embodiment, the via-level ILD is formed of a low-k SiCOH material, and the line-level ILD is formed of a low-k polymeric thermoset material.Type: GrantFiled: November 14, 2002Date of Patent: July 12, 2005Assignee: International Business Machines CorporationInventors: John A. Fitzsimmons, Stephen E. Greco, Jia Lee, Stephen M. Gates, Terry Spooner, Matthew S. Angyal, Habib Hichri, Theordorus E. Standaert, Glenn A. Biery
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Publication number: 20050118803Abstract: Stacked via pillars, such as metal via pillars, are provided at different and designated locations in IC chips to support the chip structure during processing and any related processing stresses such as thermal and mechanical stresses. These stacked via pillars connect and extend from a base substrate of the strip to a top oxide cap of the chip. The primary purpose of the stacked via pillars is to hold the chip structure together to accommodate any radial deformations and also to relieve any stress, thermal and/or mechanical, build-up during processing or reliability testing. The stacked via pillars are generally not electrically connected to any active lines or vias, however in some embodiments the stacked via pillars can provide an additional function of providing an electrical connection in the chip.Type: ApplicationFiled: December 2, 2003Publication date: June 2, 2005Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Habib Hichri, Xiao Liu, Vincent McGahay, Conal Murray, Jawahar Nayak, Thomas Shaw
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Process for removing impurities from low dielectric constant films disposed on semiconductor devices
Publication number: 20050087490Abstract: A process of removing impurities from a cured low dielectric constant organic polymeric film disposed on a semiconductor device. The process involves disposing a low dielectric constant curable organic polymeric film on an electrically conductive surface of a semiconductor device. The organic polymeric film is cured on the semiconductor device and thereupon contacted with supercritical carbon dioxide, optionally in the presence of at least one cosolvent.Type: ApplicationFiled: October 28, 2003Publication date: April 28, 2005Applicant: International Business Machines CorporationInventors: Mark Chace, Jeffrey Hedrick, Habib Hichri, Keith Pope, Jia Lee, Kelly Malone, Kenneth McCullough, Wayne Moreau, Darryl Restaino, Shahab Siddiqui -
Publication number: 20050023693Abstract: An advanced back-end-of-line (BEOL) interconnect structure having a hybrid dielectric is disclosed. The inter-layer dielectric (ILD) for the via level is preferably different from the ILD for the line level. In a preferred embodiment, the via-level ILD is formed of a low-k SiCOH material, and the line-level ILD is formed of a low-k polymeric thermoset material.Type: ApplicationFiled: July 29, 2004Publication date: February 3, 2005Inventors: John Fitzsimmons, Stephen Greco, Jia Lee, Stephen Gates, Terry Spooner, Matthew Angyal, Habib Hichri, Theordorus Standaert, Glenn Biery
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Publication number: 20040253457Abstract: A semiconductor wafer provided with a thermosetting porous insulating film, wherein the insulating film is made porous, cured and polymerized on the wafer. The film is characterized by a very low dielectric constant based on its constituency and porosity, the latter property of which is caused by the inclusion of liquid or supercritical carbon dioxide in the polymeric reaction mixture.Type: ApplicationFiled: May 28, 2004Publication date: December 16, 2004Inventors: Habib Hichri, Kelly Malone, Arthur Martin
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Patent number: 6831363Abstract: An interconnect structure for a semiconductor device includes an organic, low dielectric constant (low-k) dielectric layer formed over a lower metallization level. A via formed is within the low-k dielectric layer, the via connecting a lower metallization line formed in the lower metallization level with an upper metallization line formed in an upper metallization level. The via is surrounded by a structural collar selected from a material having a coefficient of thermal expansion (CTE) so as to protect the via from shearing forces following a thermal expansion of the low-k dielectric layer.Type: GrantFiled: December 12, 2002Date of Patent: December 14, 2004Assignee: International Business Machines CorporationInventors: Timothy J. Dalton, Sanjit K. Das, Brett H. Engel, Brian W. Herbst, Habib Hichri, Bernd E. Kastenmeier, Kelly Malone, Jeffrey R. Marino, Arthur Martin, Vincent J. McGahay, Ian D. Melville, Chandrasekhar Narayan, Kevin S. Petrarca, Richard P. Volant
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Patent number: 6764873Abstract: A semiconductor wafer provided with a thermosetting porous insulating film, wherein the insulating film is made porous, cured and polymerized on the wafer. The film is characterized by a very low dielectric constant based on its constituency and porosity, the latter property of which is caused by the inclusion of liquid or supercritical carbon dioxide in the polymeric reaction mixture.Type: GrantFiled: July 18, 2002Date of Patent: July 20, 2004Assignee: International Business Machines CorporationInventors: Habib Hichri, Kelly Malone, Arthur Martin
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Publication number: 20040113278Abstract: An interconnect structure for a semiconductor device includes an organic, low dielectric constant (low-k) dielectric layer formed over a lower metallization level. A via formed is within the low-k dielectric layer, the via connecting a lower metallization line formed in the lower metallization level with an upper metallization line formed in an upper metallization level. The via is surrounded by a structural collar selected from a material having a coefficient of thermal expansion (CTE) so as to protect the via from shearing forces following a thermal expansion of the low-k dielectric layer.Type: ApplicationFiled: December 12, 2002Publication date: June 17, 2004Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Timothy J. Dalton, Sanjit K. Das, Brett H. Engel, Brian W. Herbst, Habib Hichri, Bernd E. Kastenmeier, Kelly Malone, Jeffrey R. Marino, Arthur Martin, Vincent J. McGahay, Ian D. Melville, Chandrasekhar Narayan, Kevin S. Petrarca, Richard P. Volant
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Publication number: 20040094839Abstract: An advanced back-end-of-line (BEOL) interconnect structure having a hybrid dielectric is disclosed. The inter-layer dielectric (ILD) for the via level is preferably different from the ILD for the line level. In a preferred embodiment, the via-level ILD is formed of a low-k SiCOH material, and the line-level ILD is formed of a low-k polymeric thermoset material.Type: ApplicationFiled: November 14, 2002Publication date: May 20, 2004Applicant: International Business Machines CorporationInventors: John A. Fitzsimmons, Stephen E. Greco, Jia Lee, Stephen M. Gates, Terry Spooner, Matthew S. Angyal, Habib Hichri, Theordorus E. Standaert, Glenn A. Biery
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Publication number: 20040013887Abstract: A semiconductor wafer provided with a thermosetting porous insulating film, wherein the insulating film is made porous, cured and polymerized on the wafer. The film is characterized by a very low dielectric constant based on its constituency and porosity, the latter property of which is caused by the inclusion of liquid or supercritical carbon dioxide in the polymeric reaction mixture.Type: ApplicationFiled: July 18, 2002Publication date: January 22, 2004Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Habib Hichri, Kelly Malone, Arthur Martin
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Patent number: 6506854Abstract: Disclosed is a solution that comprises (A) a solvent; (B) about 0.001 to about 20 wt % of a terpolymer that comprises the condensation reaction product of (1) an aromatic compound that contains a benzene or naphthalene ring substituted with the group OR or SR, where R is hydrogen, alkyl from C1 to C15, or aryl, alkaryl, or aralkyl from C6 to C15; (2) about 0.1 to about 10 moles of a carbonyl compound per mole of said aromatic compound; and (3) about 0.1 to about 10 moles of a thiourea per mole of said aromatic compound (C) about 1 to about 5 wt % of a base; (D) about 0.1 wt % to saturation of a salt; and (E) 0 to about 20 wt % of an alcohol. Also disclosed is a method of making the terpolymer in the absence of an acid catalyst and a method of inhibiting the formation of scale on reactor components in contact with polymerizing vinyl chloride monomer.Type: GrantFiled: May 22, 2001Date of Patent: January 14, 2003Assignee: Occidental Chemical CorporationInventors: Ramesh Krishnamurti, Sandor Nagy, Qi Wang, Habib Hichri
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Publication number: 20020015692Abstract: Disclosed is a solution that comprisesType: ApplicationFiled: May 22, 2001Publication date: February 7, 2002Inventors: Ramesh Krishnamurti, Sandor Nagy, Qi Wang, Habib Hichri
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Patent number: 6258910Abstract: Disclosed is a method of polymerizing vinyl chloride or vinylidene chloride monomer. A mixture is prepared of (1) a monomer selected from the group consisting of vinyl chloride, vinylidene chloride, and mixtures thereof with up to about 20 wt % of a comonomer, (2) supercritical carbon dioxide, subcritical carbon dioxide, or liquid carbon dioxide in a weight ratio to the monomer of about 0.5 to about 5; and (3) about 0.1 to about 1 phr of a free radical initiator that is soluble in said supercritical carbon dioxide or a solution of said a free radical initiator in a solvent that is miscible with the carbon dioxide. The mixture is heated to a temperature of about 40 to about 70° C. to polymerize the monomer.Type: GrantFiled: June 9, 1999Date of Patent: July 10, 2001Assignee: Occidental Chemical CorporationInventors: Habib Hichri, Ramesh Krishnamurti, Thomas Smolka