Abstract: Disclosed is a method of inhibiting the formation of scale on reactor surfaces in contact with a polymerizing vinyl monomer comprising contacting said monomer with a terpolymer which comprises the condensation reaction product of(A) an aromatic compound that contains the group ##STR1## where Q is OR or SR and R is hydrogen, alkyl from C.sub.1 to C.sub.15, or aryl, alkaryl, or aralkyl from C.sub.6 to C.sub.15 :(B) about 0.1 to about 10 moles of a carbonyl compound per mole of said aromatic compound; and(C) about 0.1 to about 10 moles of a thiourea per mole of said aromatic compound.

Abstract: Disclosed is method of sulfodechlorinating an aromatic compound. A composition is prepared of (1) an aromatic compound having the general formula ##STR1## Where R is CHO or COOH and n is 1 to 3, (2) an alkali metal or alkaline earth metal sulfite or bisulfite in an amount stoichiometric to about 20 mole % in excess of stoichiometric, (3) water in an amount sufficient to form a solution of the sulfite or bisulfite, and (4) sufficient base to raise the pH of the composition to about 10 to about 14. The composition is heated at about 150 to about 200.degree. C. No catalyst is present in the composition.

Abstract: Disclosed is a method of inhibiting the formation of scale on reactor surfaces in contact with a polymerizing vinyl monomer. The reactor surfaces are contacted with a composition that contains, as a scale reducing agent, an acidic hydrazone condensate or a salt thereof. The scale reducing agent can be added to the polymerizing monomer or it can be placed in a composition containing a surfactant and an inorganic binder and the composition can be applied to the reactor surfaces or added to the monomer.

Abstract: Disclosed is a method of making m-chlorobenzotrifluoride. Benzotrifluoride is reacted with chlorine gas in the presence of about 0.1 to about 5 mole % (based on benzotrifluoride) of a metal chloride which can be FeCl.sub.3, SbCl.sub.3, or AlCl.sub.3 and about 0.025 to about 5.0 mole % (based on benzotrifluoride) of a catalyst having the formula ##STR1## where Z is halogen, alkyl from C.sub.1 to C.sub.6, alkoxy from C.sub.1 to C.sub.6, or fluoroalkyl from C.sub.1 to C.sub.6, n is 0 to 5, and the molar ratio of metal chloride to cocatalyst is about 0.5 to about 4.

Abstract: Methods are provided for the production of supported monophasic group I-III-VI semiconductor films. In the subject methods, a substrate is coated with group I and III elements and then contacted with a reactive group VI element containing atmosphere under conditions sufficient to produce a substrate coated with a composite of at least two different group I-III-IV alloys. The resultant composite coated substrate is then annealed in an inert atmosphere under conditions sufficient to convert the composite coating to a monophasic group I-III-VI semiconductor film. The resultant supported semiconductor films find use in photovoltaic applications, particularly as absorber layers in solar cells.