Abstract: A device includes a substrate; a first layer over the substrate, the first layer containing a metallic material, wherein the first layer includes a trench; and a porous material layer having a first portion and a second portion. The first portion is disposed in the trench. The second portion is disposed on a top surface of the first layer. The first and the second portions contain substantially same percentage of Si, substantially same percentage of O, and substantially same percentage of C.

Abstract: A method for fabrication a semiconductor device and a system utilizing the same are provided. In the method for fabrication the semiconductor device, at first, a semiconductor structure having a metal conducting structure is provided. Next, a dielectric layer is deposited over the metal conducting structure. Then, an etching process is performed on the dielectric layer by using a fluorine-containing gas so as to form an opening, in which fluorine-containing compounds are formed on a surface of the opening during the etching process. And then, a pre-cleaning process is performed by using UV radiation so as to remove the fluorine-containing compounds. After the pre-cleaning process is performed, a cleaning process is performed to clean the surface of the opening.

Abstract: A method for forming a semiconductor structure is provided. A substrate including a metal portion and a low-k dielectric portion formed thereon is provided. The metal portion adjoins the low-k dielectric portion. A SAM solution is prepared. The SAM solution includes at least one blocking compound and a multi-solvent system. The multi-solvent system includes an alcohol and an ester. The SAM solution is applied over surfaces of the metal portion and the low-k dielectric portion. The substrate is heated to remove the multi-solvent system of the SAM solution to form a blocking layer on one of the metal portion and the low-k dielectric portion. A material layer is selectively deposited on the other one of the metal portion and the low-k dielectric portion using the blocking layer as a stencil. The blocking layer is removed from the substrate.

Abstract: A method of forming a semiconductor device includes providing a precursor. The precursor includes a substrate; a gate stack over the substrate; a first dielectric layer over the gate stack; a gate spacer on sidewalls of the gate stack and on sidewalls of the first dielectric layer; and source and drain (S/D) contacts on opposing sides of the gate stack. The method further includes recessing the gate spacer to at least partially expose the sidewalls of the first dielectric layer but not to expose the sidewalls of the gate stack. The method further includes forming a spacer protection layer over the gate spacer, the first dielectric layer, and the S/D contacts.

Abstract: The present disclosure provides a method for forming an integrated circuit (IC) structure. The method comprises providing a substrate including a conductive feature; forming aluminum (Al)-containing dielectric layer on the conductive feature; forming a low-k dielectric layer on the Al-containing dielectric layer; and etching the low-k dielectric layer to form a contact trench aligned with the conductive feature. A bottom of the contact trench is on a surface of the Al-containing dielectric layer.

Abstract: The present disclosure involves forming a porous low-k dielectric structure. A plurality of conductive elements is formed over the substrate. The conductive elements are separated from one another by a plurality of openings. A barrier layer is formed over the conductive elements. The barrier layer is formed to cover sidewalls of the openings. A treatment process is performed to the barrier layer. The barrier layer becomes hydrophilic after the treatment process is performed. A dielectric material is formed over the barrier layer after the treatment process has been performed. The dielectric material fills the openings and contains a plurality of porogens.

Abstract: The present disclosure provides a method for forming an integrated circuit (IC) structure. The method comprises providing a substrate including a conductive feature; forming aluminum (Al)-containing dielectric layer on the conductive feature; forming a low-k dielectric layer on the Al-containing dielectric layer; and etching the low-k dielectric layer to form a contact trench aligned with the conductive feature. A bottom of the contact trench is on a surface of the Al-containing dielectric layer.

Abstract: The present disclosure involves forming a porous low-k dielectric structure. A plurality of conductive elements is formed over the substrate. The conductive elements are separated from one another by a plurality of openings. A barrier layer is formed over the conductive elements. The barrier layer is formed to cover sidewalls of the openings. A treatment process is performed to the barrier layer. The barrier layer becomes hydrophilic after the treatment process is performed. A dielectric material is formed over the barrier layer after the treatment process has been performed. The dielectric material fills the openings and contains a plurality of porogens.

Abstract: Examples of an integrated circuit with an interconnect structure and a method for forming the integrated circuit are provided herein. In some examples, the method includes receiving a workpiece that includes a substrate and an interconnect structure. The interconnect structure includes a first conductive feature disposed within a first inter-level dielectric layer. A blocking layer is selectively formed on the first conductive feature without forming the blocking layer on the first inter-level dielectric layer. An alignment feature is selectively formed on the first inter-level dielectric layer without forming the alignment feature on the blocking layer. The blocking layer is removed from the first conductive feature, and a second inter-level dielectric layer is formed on the alignment feature and on the first conductive feature. The second inter-level dielectric layer is patterned to define a recess for a second conductive feature, and the second conductive feature is formed within the recess.

Abstract: The present disclosure provides a method of forming an integrated circuit structure. The method includes depositing a first metal layer on a semiconductor substrate; forming a hard mask on the first metal layer; patterning the first metal layer to form first metal features using the hard mask as an etch mask; depositing a dielectric layer of a first dielectric material on the first metal features and in gaps among the first metal features; performing a chemical mechanical polishing (CMP) process to both the dielectric layer and the hard mask; removing the hard mask, thereby having portions of the dielectric layer extruded above the metal features; forming an inter-layer dielectric (ILD) layer of the second dielectric material different from the first dielectric material; and patterning the ILD layer to form openings that expose the first metal features and are constrained to be self-aligned with the first metal features by the extruded portions of the first dielectric layer.

Abstract: A method includes providing a dielectric layer; forming a metal line in the dielectric layer; forming an etch stop layer on the metal line, wherein the etch stop layer includes a metal atom bonded with a hydroxyl group; performing a treatment process to the etch stop layer to displace hydrogen in the hydroxyl group with an element other than hydrogen; partially etching the etch stop layer to expose the metal line; and forming a conductive feature above the etch stop layer and in physical contact with the metal line.

Abstract: A method of making an optical bench includes forming a trench in a substrate and wherein the trench has a sloping side, forming a reflector layer over the sloping side, depositing a redistribution layer over the substrate, disposing an under bump metallization (UBM) layer over the redistribution layer, depositing a passivation layer over the redistribution layer and surrounding sidewalls of the UBM layer, and mounting an optical component over an uppermost portion of the substrate, wherein the optical component is electrically connected to a through substrate via (TSV) extending through the substrate. The reflector layer is configured to reflect an electromagnetic wave from the optical component, and wherein the optical component is mounted outside the trench.

Abstract: A method for forming a semiconductor structure is provided. A substrate including a metal portion and a low-k dielectric portion formed thereon is provided. The metal portion adjoins the low-k dielectric portion. A SAM solution is prepared. The SAM solution includes at least one blocking compound and a multi-solvent system. The multi-solvent system includes an alcohol and an ester. The SAM solution is applied over surfaces of the metal portion and the low-k dielectric portion. The substrate is heated to remove the multi-solvent system of the SAM solution to form a blocking layer on one of the metal portion and the low-k dielectric portion. A material layer is selectively deposited on the other one of the metal portion and the low-k dielectric portion using the blocking layer as a stencil. The blocking layer is removed from the substrate.

Abstract: A semiconductor device, a package structure, and methods of forming the same are disclosed. An embodiment is a semiconductor device comprising a first optical device over a first substrate, a vertical waveguide on a top surface of the first optical device, and a second substrate over the vertical waveguide. The semiconductor device further comprises a lens capping layer on a top surface of the second substrate, wherein the lens capping layer is aligned with the vertical waveguide, and a second optical device over the lens capping layer.

Abstract: A method of fabricating a waveguide device is disclosed. The method includes providing a substrate having an elector-interconnection region and a waveguide region and forming a patterned dielectric layer and a patterned redistribution layer (RDL) over the substrate in the electro-interconnection region. The method also includes bonding the patterned RDL to a vertical-cavity surface-emitting laser (VCSEL) through a bonding stack. A reflecting-mirror trench is formed in the substrate in the waveguide region, and a reflecting layer is formed over a reflecting-mirror region inside the waveguide region. The method further includes forming and patterning a bottom cladding layer in a wave-tunnel region inside the waveguide region and forming and patterning a core layer and a top cladding layer in the waveguide region.

Abstract: A method and structure for forming an enhanced metal capping layer includes forming a portion of a multi-level metal interconnect network over a substrate. In some embodiments, the portion of the multi-level metal interconnect network includes a plurality of metal regions. In some cases, a dielectric region is disposed between each of the plurality of metal regions. By way of example, a metal capping layer may be deposited over each of the plurality of metal regions. Thereafter, in some embodiments, a self-assembled monolayer (SAM) may be deposited, where the SAM forms selectively on the metal capping layer, while the dielectric region is substantially free of the SAM. In various examples, after selectively forming the SAM on the metal capping layer, a thermal process may be performed, where the SAM prevents diffusion of the metal capping layer during the thermal process.

Abstract: A structure is provided that includes a first conductive component and a first interlayer dielectric (ILD) that surrounds the first conductive component. A self-assembly layer is formed on the first conductive component but not on the first ILD. A first dielectric layer is formed over the first ILD but not over the first conductive component. A second ILD is formed over the first conductive component and over the first ILD. An opening is etched in the second ILD. The opening is at least partially aligned with the first conductive component. The first dielectric layer protects portions of the first ILD located therebelow from being etched. The opening is filled with a conductive material to form a second conductive component in the opening.

Abstract: A method of forming a semiconductor structure includes providing a substrate; forming a low-k dielectric layer over the substrate; embedding a conductive wiring into the low-k dielectric layer; and thermal soaking the conductive wiring in a carbon-containing silane-based chemical to form a barrier layer on the conductive wiring. A lining barrier layer is formed in the opening for embedding the conductive wiring. The lining barrier layer may comprise same materials as the barrier layer, and the lining barrier layer may be recessed before forming the barrier layer and may contain a metal that can be silicided.

Abstract: A system and method for manufacturing semiconductor devices is provided. An embodiment comprises using an etchant to remove a portion of a substrate to form an opening with a 45° angle with a major surface of the substrate. The etchant comprises a base, a surfactant, and an oxidant. The oxidant may be hydrogen peroxide.

Abstract: A method of fabricating a waveguide device is disclosed. The method includes providing a substrate having an elector-interconnection region and a waveguide region and forming a patterned dielectric layer and a patterned redistribution layer (RDL) over the substrate in the electro-interconnection region. The method also includes bonding the patterned RDL to a vertical-cavity surface-emitting laser (VCSEL) through a bonding stack. A reflecting-mirror trench is formed in the substrate in the waveguide region, and a reflecting layer is formed over a reflecting-mirror region inside the waveguide region. The method further includes forming and patterning a bottom cladding layer in a wave-tunnel region inside the waveguide region and forming and patterning a core layer and a top cladding layer in the waveguide region.