Abstract: A semiconductor structure and a method for forming the same are provided. The method for manufacturing a semiconductor structure includes forming a bottom electrode layer over a substrate and forming a first passivation layer over the bottom electrode layer by a first atomic layer deposition process. The method for manufacturing a semiconductor structure further includes forming a dielectric layer over the first passivation layer by a second atomic layer deposition process and forming a second passivation layer over the dielectric layer by a third atomic layer deposition process. The method for manufacturing a semiconductor structure further includes forming a top electrode layer over the second passivation layer.

Abstract: The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a III-V semiconductor layer; an aluminum oxide layer formed on the III-V semiconductor layer; and a lanthanide oxide layer formed on the aluminum oxide layer. The method of manufacturing a semiconductor device includes: forming an aluminum oxide layer between a III-V semiconductor layer and a lanthanide oxide layer so as to prevent an inter-reaction of atoms between the III-V semiconductor layer and the lanthanide oxide layer.