Abstract: A display panel including a first light-emitting device, a second light-emitting device, a first insulating film, and a conductive film is provided. The first light-emitting device includes a first electrode and a second electrode. The second light-emitting device includes a third electrode and a fourth electrode. The first insulating film is in contact with a top surface and a side surface of the first electrode, a top surface and a side surface of the second electrode, a top surface and a side surface of the third electrode, and a top surface and a side surface of the fourth electrode, and includes a first opening and a second opening. The first opening overlaps with the second electrode and the second opening overlaps with the fourth electrode. The conductive film is electrically connected to the second electrode and the fourth electrode in the first opening and in the second opening, respectively.

Abstract: A semiconductor device with a high driving speed is provided. The semiconductor device includes first to third transistors and a first capacitor. One of a source and a drain of the third transistor is electrically connected to a gate of the second transistor, and the other of the source and the drain of the third transistor is electrically connected to a gate of the first transistor and a first terminal of the first capacitor. One of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, and the other of the source and the drain of the first transistor is electrically connected to the other of the source and the drain of the second transistor and a second terminal of the first capacitor.

Abstract: A novel input device that is highly convenient or reliable is provided. A novel input/output device that is highly convenient or reliable is provided. A semiconductor device is provided. The present inventors have reached an idea of a structure including a plurality of conductive films configured to be capacitively coupled to an approaching object, a driver circuit that selects a conductive film from a plurality of conductive films in a predetermined order, and a sensor circuit having a function of supplying a search signal and a sensing signal.

Abstract: A display device that is suitable for increasing in size is achieved. Three or more source lines are provided for each pixel column. Video signals having the same polarity are input to adjacent source lines during one frame period. Dot inversion driving is used to reduce a flicker, crosstalk, or the like.

Abstract: A semiconductor device that operates stably is provided. The semiconductor device retains the potential of a floating node stably with use of a transistor with a long channel length. The transistor includes first to third conductive layers, a semiconductor layer, and an insulating film. The first and second conductive layers each include a region in contact with a top surface of a first insulating layer. The semiconductor layer includes a region in contact with a side surface of an opening formed in the first insulating layer, a top surface of a second insulating layer in a bottom portion of the opening, a top surface of the first conductive layer, and a top surface of the second conductive layer. The insulating film includes a region in contact with a top surface of the semiconductor layer, the top surface of the first conductive layer, and the top surface of the second conductive layer.

Abstract: A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.

Abstract: A high-resolution or high-definition display device is provided.

Abstract: A semiconductor device that has lower power consumption and is capable of non-destructive reading is provided. The semiconductor device includes first to fourth transistors and first and second FTJ elements. The first FTJ element and the second FTJ element each include an input terminal, a tunnel insulating film, a dielectric, and an output terminal. One of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the third transistor, a gate of the fourth transistor, and the output terminal of the first FTJ element. One of a source and a drain of the second transistor is electrically connected to one of a source and a drain of the fourth transistor, a gate of the third transistor, and the output terminal of the second FTJ element.

Abstract: A semiconductor device with a large storage capacity per unit area is provided. The semiconductor device includes a first insulator including a first opening, a first conductor that is over the first insulator and includes a second opening, a second insulator that is over the first insulator and includes a third opening, and an oxide penetrating the first opening, the second opening, and the third opening. The oxide includes a first region at least in the first opening, a second region at least in the second opening, and a third region at least in the third opening. The resistances of the first region and the third region are lower than the resistance of the second region.

Abstract: A novel display panel that is highly convenient or reliable is provided. The display panel includes a first pixel, a second pixel, and a functional layer. The first pixel includes a first display element, and the second pixel includes a second display element. The functional layer includes a first pixel circuit and a second pixel circuit. The first display element includes a first electrode, a second electrode, and a layer containing a liquid crystal material. A first distance is provided between the first electrode and the functional layer. A second distance is provided between the second electrode and the functional layer. The first electrode and the second electrode each include a region overlapping with the layer containing a liquid crystal material. The second distance is shorter than the first distance. The second display element includes a third electrode, a fourth electrode, and the layer containing a liquid crystal material.

Abstract: A semiconductor device that operates stably is provided. The semiconductor device includes first to fourth transistors. The first to fourth transistors each include a first insulator. The first and second transistors each include a first gate insulating film, and the third and fourth transistors each include a second gate insulating film. The first and second transistors each include a first channel formation region along a side surface of a first opening formed in the first insulator, and the third and fourth transistors each include a second channel formation region along a side surface of a second opening formed in the first insulator. The first gate insulating film is positioned above the first channel formation region, and the second gate insulating film is positioned above the second channel formation region. A thickness of the first gate insulating film is larger than a thickness of the second gate insulating film.

Abstract: An electronic device with a novel structure is provided. The electronic device includes a semiconductor device, and the semiconductor device has a structure where a first element layer, a second element layer, and a third element layer are stacked. The first element layer includes a first transistor that includes a semiconductor layer containing silicon in a channel formation region. The second element layer includes a second transistor that includes a semiconductor layer containing a metal oxide in a channel formation region. The third element layer includes a light-emitting device. The first element layer includes an arithmetic circuit including a scan flip-flop. The second element layer includes a backup circuit electrically connected to the scan flip-flop and a pixel circuit electrically connected to the light-emitting device.

Abstract: An input/output device includes a first sensor electrode and a second sensor electrode. In addition, the input/output device includes a first electrode and a second electrode which are electrodes for a display element, and a substrate sandwiched between the first sensor electrode and the second sensor electrode. The second sensor electrode is formed concurrently with the first electrode using the same material. The input/output device sensors a change in capacitance of a capacitor formed between the first sensor electrode and the second sensor electrode. Furthermore, a third sensor electrode to which a floating potential is applied may be provided to overlap with the first electrode. In the input/output device, either a liquid crystal element or a light-emitting element may be used, or both the liquid crystal element and the light-emitting element may be used.

Abstract: To provide a display device or the like that enables stable curing of a resin. The display device includes a first circuit and a second circuit over the same substrate. The first circuit has a function of performing display; the second circuit has a function of driving the first circuit; the second circuit includes a transistor and a capacitor; the transistor includes an oxide semiconductor layer over a first insulating layer; the capacitor includes a first conductive layer, a second insulating layer, and a second conductive layer; the first conductive layer is positioned over the first insulating layer; one of a source and a drain of the transistor is electrically connected to the second conductive layer; and the first conductive layer and the oxide semiconductor layer include the same metal element.

Abstract: A display apparatus includes first to fourth pixels. The first pixel includes a first light-emitting device and a first layer. The first light-emitting device emits first light toward the first layer. An emission spectrum of the first light has an intensity in a blue-light wavelength range and an intensity in a green-light wavelength range. The first layer contains a color conversion material converting blue and green light into red light. The second pixel includes a second light-emitting device and a second layer. The second layer has a function of transmitting blue light. The third pixel includes a third light-emitting device and a third layer. The third layer has a function of absorbing blue light and transmitting green light. The fourth pixel includes a fourth light-emitting device and a fourth layer. The first to fourth light-emitting device provide the same emission spectrum as each other.

Abstract: A moving object including a display apparatus capable of performing highly visible display is provided. The moving object includes a display unit, an imaging unit, an arithmetic unit, and a control unit. The display unit has a function of displaying a display image. The imaging unit has a function of obtaining a first captured image including the display image and an external view overlapping with the display image. The arithmetic unit has a function of comparing a color of the display image and a color of the external view and correcting the color of the display image on the basis of a comparison result. The control unit has a function of controlling running of the moving object on the basis of the first captured image.

Abstract: Provided is a display system with high display quality and high resolution. The display system includes a first layer and a display portion. The display portion is positioned in a region overlapping with the first layer. The first layer includes a semiconductor substrate containing silicon as a material, and a plurality of first transistors and a plurality of second transistors whose channel formation regions contain silicon are formed over the semiconductor substrate. The first layer includes a first circuit and a second circuit; the first circuit includes a driver circuit for driving the display portion; and the second circuit includes a memory device, a GPU, and an EL correction circuit. The display portion includes a pixel, and the pixel includes a light-emitting device containing organic EL and is electrically connected to the driver circuit.

Abstract: A semiconductor device that has lower power consumption and is capable of non-destructive reading is provided. The semiconductor device includes a first transistor, a first FTJ element, and a second FTJ element. A first terminal of the first transistor is electrically connected to an output terminal of the first FTJ element and an input terminal of the second FTJ element. In data writing, polarization is caused in each of the first FTJ element and the second FTJ element in accordance with the data. In data reading, voltage with which the polarization does not change is applied between the output terminal of the first FTJ element and the input terminal of the second FTJ element. At this time, the first transistor is turned on, whereby a differential current between current flowing through the first FTJ element and current flowing through the second FTJ element flows through the first transistor.

Abstract: A semiconductor device including a transistor having a minute size is provided. First and second transistors are included. The first transistor includes first to third conductive layers, a first semiconductor layer, and a first insulating layer. The second conductive layer is provided over the first conductive layer. The first semiconductor layer is in contact with the top surface of the first conductive layer and the second conductive layer. The first insulating layer is in contact with the top surface of the first semiconductor layer. The third conductive layer is provided over first semiconductor layer and the first insulating layer. The second transistor includes fourth to sixth conductive layers, a second semiconductor layer, and the first insulating layer. The fifth conductive layer is provided over the fourth conductive layer. The second semiconductor layer is in contact with the top surface of the fourth conductive layer and the fifth conductive layer.

Abstract: A semiconductor device including a circuit which does not easily deteriorate is provided. The semiconductor device includes a first transistor, a second transistor, a first switch, a second switch, and a third switch. A first terminal of the first transistor is connected to a first wiring. A second terminal of the first transistor is connected to a second wiring. A gate and a first terminal of the second transistor are connected to the first wiring. A second terminal of the second transistor is connected to a gate of the first transistor. The first switch is connected between the second wiring and a third wiring. The second switch is connected between the second wiring and the third wiring. The third switch is connected between the gate of the first transistor and the third wiring.