Abstract: The liquid crystal display device includes an island-shaped first semiconductor film 102 which is formed over a base insulating film 101 and in which a source 102d, a channel forming region 102a, and a drain 102b are formed; a first electrode 102c which is formed of a material same as the first semiconductor film 102 to be the source 102d or the drain 102b and formed over the base insulating film 101; a second electrode 108 which is formed over the first electrode 102c and includes a first opening pattern 112; and a liquid crystal 110 which is provided over the second electrode 108.

Abstract: A high-resolution display device and a fabrication method thereof are provided. The display device includes a first insulating layer; a light-emitting element and a first conductive layer over the first insulating layer; a first layer over the first conductive layer; a second conductive layer over the first layer; a second insulating layer over the light-emitting element, the second conductive layer, and the first insulating layer; and a third conductive layer over the second insulating layer. The light-emitting element includes a fourth conductive layer, a second layer over the fourth conductive layer, a third layer over the second layer, and a fifth conductive layer over the third layer.

Abstract: In view of the problem that a reduced thickness of an EL film causes a short circuit between an anode and a cathode and malfunction of a transistor, the invention provides a display device that has a light emitting element including an electrode and an electroluminescent layer, a wire electrically connected to the electrode of the light emitting element, a transistor provided with an active layer including a source, a drain and a channel forming region, and a power supply line electrically connected to one of the source and the drain of the transistor, wherein the wire is electrically connected to the other of the source and the drain of the transistor, and the width of a part of the electrode in the vicinity of a portion where the electrode is electrically connected to the wire is smaller than that of the electrode in the other portion.

Abstract: A display device driven at high speed is provided. The display device includes pixels, a first signal line, a second signal line, a scan line, and an insulating layer. The first signal line includes a region overlapping with the second signal line with the insulating layer therebetween. The pixels each include a first transistor and a second transistor. The first signal line functions as one of a source and a drain of the first transistor in each of pixels in one column including a first pixel. In the first pixel, the first transistor includes a first semiconductor layer. The first semiconductor layer includes a region in contact with a sidewall of a first opening in the insulating layer. The second signal line functions as one of a source and a drain of the second transistor in each of the pixels in one row including the first pixel.

Abstract: It is an object to provide a liquid crystal display device which has excellent viewing angle characteristics and higher quality. The present invention has a pixel including a first switch, a second switch, a third switch, a first resistor, a second resistor, a first liquid crystal element, and a second liquid crystal element. A pixel electrode of the first liquid crystal element is electrically connected to a signal line through the first switch. The pixel electrode of the first liquid crystal element is electrically connected to a pixel electrode of the second liquid crystal element through the second switch and the first resistor. The pixel electrode of the second liquid crystal element is electrically connected to a Cs line through the third switch and the second resistor. A common electrode of the first liquid crystal element is electrically connected to a common electrode of the second liquid crystal element.

Abstract: A high-resolution or high-definition display device is provided.

Abstract: An adder circuit inhibiting overflow is provided. A first memory, a second memory, a third memory, and a fourth memory are included. A step of supplying first data with a sign to the first memory and supplying the first data with a positive sign stored in the first memory, to the second memory; a step of supplying the first data with a negative sign stored in the second memory, to the third memory; a step of generating second data by adding the first data with a positive sign stored in the second memory and the first data with a negative sign stored in the third memory; and a step of storing the second data in the fourth memory are included. When the second data stored in the fourth memory are all second data with a positive sign or all second data with a negative sign, all the second data stored in the fourth memory are added.

Abstract: It is an object of the present invention to apply a sufficient electrical field to a liquid crystal material in a horizontal electrical field liquid crystal display device typified by an FFS type. In a horizontal electrical field liquid crystal display, an electrical field is applied to a liquid crystal material right above a common electrode and a pixel electrode using plural pairs of electrodes rather than one pair of electrodes. One pair of electrodes includes a comb-shaped common electrode and a comb-shaped pixel electrode. Another pair of electrodes includes a common electrode provided in a pixel portion and the comb-shaped pixel electrode.

Abstract: It is an object of the present invention to form a pixel electrode and a metal film using one resist mask in manufacturing a stacked structure by forming the metal film over the pixel electrode. A conductive film to be a pixel electrode and a metal film are stacked. A resist pattern having a thick region and a region thinner than the thick region is formed over the metal film using an exposure mask having a semi light-transmitting portion. The pixel electrode, and the metal film formed over part of the pixel electrode to be in contact therewith are formed using the resist pattern. Accordingly, a pixel electrode and a metal film can be formed using one resist mask.

Abstract: A low-resolution image is displayed at high resolution and power consumption is reduced. Resolution is made higher by super-resolution processing. Then, display is performed with the luminance of a backlight controlled by local dimming after the super-resolution processing. By controlling the luminance of the backlight, power consumption can be reduced. Further, by performing the local dimming after the super-resolution processing, accurate display can be performed.

Abstract: A semiconductor device capable of product-sum operation with low power consumption is provided. The semiconductor device includes first and second circuits; the first circuit includes a first holding portion and a first transistor, and the second circuit includes a second holding portion and a second transistor. The first and second circuits are each electrically connected to first and second input wirings and first and second wirings. The first holding portion has a function of holding a first current flowing through the first transistor, and the second holding portion has a function of holding a second current flowing through the second transistor. The first and second currents are determined in accordance with first data. When a potential corresponding to second data is input to the first and second input wirings, the first circuit outputs a current to one of the first wiring and the second wiring and the second circuit outputs a current to the other of the first wiring and the second wiring.

Abstract: A pixel having a transistor which controls a current value supplied to a load, a first storage capacitor, a second storage capacitor, and first to fourth switches is included. After the threshold voltage of the transistor is held in the second storage capacitor, a potential in accordance with a video signal is input to the pixel. Voltage obtained by adding a potential in which the potential in accordance with the video signal and the first storage capacitor are capacitively divided to the threshold voltage is held in the second storage capacitor in this manner, so that variation of a current value caused by variations in the threshold voltage of the transistor is suppressed. Thus, desired current can be supplied to the load such as a light-emitting element. In addition, a display device with little deviation from luminance specified by the video signal can be provided.

Abstract: A display apparatus includes a first pixel, a second pixel, a third pixel, and a fourth pixel. The first pixel includes a first light-emitting device and a first layer. The first light-emitting device emits first light toward the first layer. An emission spectrum of the first light has an intensity in a blue-light wavelength range and an intensity in a green-light wavelength range. The first light contains a color conversion material converting blue and green light into red light. The second pixel includes a second light-emitting device and a second layer. The second light-emitting device emits second light toward the second layer. The second layer has a function of transmitting blue light. The third pixel includes a third light-emitting device and a third layer. The third light-emitting device emits third light toward the third layer. The third layer has a function of absorbing blue light and transmitting green light. The fourth pixel includes a fourth light-emitting device and a fourth layer.

Abstract: A novel display apparatus is provided. The display apparatus includes a display portion and a peripheral circuit for driving the display portion, and the display portion is provided to overlap with and above the peripheral circuit. The display portion include a plurality of pixels arranged in a matrix, and the plurality of pixels each have a function of emitting light. The peripheral circuit includes a first transistor, and the pixel includes a second transistor. A semiconductor layer included in the first transistor and a semiconductor layer included in the second transistor are formed using materials having different compositions.

Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.

Abstract: A semiconductor device that enables lower power consumption and data storage imitating a human brain is provided. The semiconductor device includes a control unit, a memory unit, and a sensor unit. The memory unit includes a memory circuit and a switching circuit. The memory circuit includes a first transistor and a capacitor. The switching circuit includes a second transistor and a third transistor. The first transistor and the second transistor include a semiconductor layer including a channel formation region with an oxide semiconductor, and a back gate electrode. The control unit has a function of switching a signal supplied to the back gate electrode, in accordance with a signal obtained at the sensor unit.

Abstract: A semiconductor device with a high driving speed is provided. The semiconductor device includes first to third transistors and a first capacitor. One of a source and a drain of the third transistor is electrically connected to a gate of the second transistor, and the other of the source and the drain of the third transistor is electrically connected to a gate of the first transistor and a first terminal of the first capacitor. One of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, and the other of the source and the drain of the first transistor is electrically connected to the other of the source and the drain of the second transistor and a second terminal of the first capacitor.

Abstract: A semiconductor device that can perform product-sum operation with low power is provided. The semiconductor device includes a switching circuit. The switching circuit includes first to fourth terminals. The switching circuit has a function of selecting one of the third terminal and the fourth terminal as electrical connection destination of the first terminal, and selecting the other of the third terminal and the fourth terminal as electrical connection destination of the second terminal, on the basis of first data. The switching circuit includes a first transistor and a second transistor each having a back gate. The switching circuit has a function of determining a signal-transmission speed between the first terminal and one of the third terminal and the fourth terminal and a signal-transmission speed between the second terminal and the other of the third terminal and the fourth terminal on the basis of potentials of the back gates. The potentials are determined by second data.

Abstract: A transistor whose channel region includes an oxide semiconductor is used as a pull down transistor. The band gap of the oxide semiconductor is 2.0 eV or more, preferably 2.5 eV or more, more preferably 3.0 eV or more. Thus, hot carrier degradation in the transistor can be suppressed. Accordingly, the circuit size of the semiconductor device including the pull down transistor can be made small. Further, a gate of a pull up transistor is made to be in a floating state by switching of on/off of the transistor whose channel region includes an oxide semiconductor. Note that when the oxide semiconductor is highly purified, the off-state current of the transistor can be 1 aA/?m (1×10?18 A/?m) or less. Therefore, the drive capability of the semiconductor device can be improved.

Abstract: To provide a semiconductor device, a liquid crystal display device, and an electronic device which have a wide viewing angle and in which the number of manufacturing steps, the number of masks, and manufacturing cost are reduced compared with a conventional one. The liquid crystal display device includes a first electrode formed over an entire surface of one side of a substrate; a first insulating film formed over the first electrode; a thin film transistor formed over the first insulating film; a second insulating film formed over the thin film transistor; a second electrode formed over the second insulating film and having a plurality of openings; and a liquid crystal over the second electrode. The liquid crystal is controlled by an electric field between the first electrode and the second electrode.