Abstract: To facilitate adjusting of a distance from an inspection target to an illumination section by providing a movable illumination section that is movable independently of the imaging section. An illumination apparatus has a plurality of LEDs arranged in a substantially annular form, a light diffusion member for diffusing light emitted from the plurality of LEDs, and a lighting control part for lighting the plurality of light sources in accordance with a predetermined lighting pattern when designated to start lighting. In particular, the illumination apparatus moves independently of a camera to adjust a distance to a workpiece.

Abstract: A process of forming a semiconductor device by use of a MOCVD technique is disclosed. The semiconductor device, which is made of primarily nitride semiconductor materials, includes a GaN channel layer, an AlGaN barrier layer, and a GaN cap layer on a substrate. The barrier layer and the cap layer are grown under a gradient temperature condition where the upstream side of the substrate with respect to the flow of the MOCVD source gases is at a higher temperature as compared with the temperature at the downstream side of the substrate with respect to the flow of the source gases.

Abstract: To facilitate adjusting of a distance from an inspection target to an illumination section by providing a movable illumination section that is movable independently of the imaging section. An illumination apparatus has a plurality of LEDs arranged in a substantially annular form, a light diffusion member for diffusing light emitted from the plurality of LEDs, and a lighting control part for lighting the plurality of light sources in accordance with a predetermined lighting pattern when designated to start lighting. In particular, the illumination apparatus moves independently of a camera to adjust a distance to a workpiece.

Abstract: A nitride semiconductor device is disclosed. The semiconductor device includes a semiconductor stack with a top layer containing gallium (Ga) and nitrogen (N), electrodes of a source, a gate and a drain provided on the semiconductor stack, and a silicon nitride (SiN) film provided on the GaN layer between the drain electrode and the gate electrode but apart from the gate electrode. The SiN film has a silicon rich composition with a composition ratio of Si/N that is greater than 3/4 and substantial oxygen contents.

Abstract: A process of forming a nucleus forming layer in a nitride semiconductor epitaxial substrate is disclosed. The process includes steps of: growing a lower layer of the nucleus forming layer on a substrate; an upper layer of the nucleus forming layer on the lower layer; and a nitride semiconductor layer each by the metal organic chemical vapor deposition (MOCVD) technique. The growth of the nitride semiconductor layer is done at a temperature lower than a growth temperature for the upper layer, and the growth of the upper layer is done by supplying ammonia (NH3) whose flow rate is greater than a flow rate of ammonia (NH3) during the growth of the lower layer.

Abstract: A process of forming an epitaxial substrate that includes nitride semiconductor layers is disclosed. The process includes steps of, (a) growing a nucleus forming layer on the substrate, and (b) growing a nitride semiconductor layer on the nuclides forming layer. The step (a) sets first and second growth temperatures in an upstream side and a downstream side, respectively, of the substrate for the flow of the source gases, where the first temperature of the upstream side is at least 5° C. but at most 10° C. lower than the second temperature of the downstream side, and the second temperature is higher than 1100° C.

Abstract: A process of forming a semiconductor device is disclosed. The semiconductor device, which is made of primarily nitride semiconductor materials, includes a GaN channel layer, an AlGaN barrier layer, and a GaN cap layer on a substrate. The barrier layer and the cap layer are grown under a gradient temperature condition where the upstream side of the substrate for the flow of the source gases of the MOCVD technique is set in a higher temperature compared with a temperature in the downstream side of the substrate for the flow of the source gases.

Abstract: To facilitate adjusting of a distance from an inspection target to an illumination section by providing a movable illumination section that is movable independently of the imaging section. An illumination apparatus has a plurality of LEDs arranged in a substantially annular form, a light diffusion member for diffusing light emitted from the plurality of LEDs, and a lighting control part for lighting the plurality of light sources in accordance with a predetermined lighting pattern when designated to start lighting. In particular, the illumination apparatus moves independently of a camera to adjust a distance to a workpiece.

Abstract: To facilitate adjusting of a distance from an inspection target to an illumination section by providing a movable illumination section that is movable independently of the imaging section. An illumination apparatus has a plurality of LEDs arranged in a substantially annular form, a light diffusion member for diffusing light emitted from the plurality of LEDs, and a lighting control part for lighting the plurality of light sources in accordance with a predetermined lighting pattern when designated to start lighting. In particular, the illumination apparatus moves independently of a camera to adjust a distance to a workpiece.

Abstract: To facilitate adjusting of a distance from an inspection target to an illumination section by providing a movable illumination section that is movable independently of the imaging section. An illumination apparatus has a plurality of LEDs arranged in a substantially annular form, a light diffusion member for diffusing light emitted from the plurality of LEDs, and a lighting control part for lighting the plurality of light sources in accordance with a predetermined lighting pattern when designated to start lighting. In particular, the illumination apparatus moves independently of a camera to adjust a distance to a workpiece.

Abstract: To facilitate adjusting of a distance from an inspection target to an illumination section by providing a movable illumination section that is movable independently of the imaging section. An illumination apparatus has a plurality of LEDs arranged in a substantially annular form, a light diffusion member for diffusing light emitted from the plurality of LEDs, and a lighting control part for lighting the plurality of light sources in accordance with a predetermined lighting pattern when designated to start lighting. In particular, the illumination apparatus moves independently of a camera to adjust a distance to a workpiece.

Abstract: A semiconductor device having a via hole whose side surface is covered with nitride metal is disclosed. The via hole is formed within an insulating region that surrounds a conductive region, where both regions are made of nitride semiconductor materials. The via hole is filled with a back metal and in side surfaces thereof is covered with the nitride metal which is heat treated at a preset temperature for a preset period. Nitrogen atoms in the nitride metal diffuse into the nitride semiconductor materials in the insulating regions and compensate nitride vacancies therein. The interface between the nitride metal and the nitride semiconductor material is converted into an altered region that shows enough resistivity to suppress currents leaking from the via hole metal to the conductive region of the nitride semiconductor material.

Abstract: To facilitate adjusting of a distance from an inspection target to an illumination section by providing a movable illumination section that is movable independently of the imaging section. An illumination apparatus has a plurality of LEDs arranged in a substantially annular form, a light diffusion member for diffusing light emitted from the plurality of LEDs, and a lighting control part for lighting the plurality of light sources in accordance with a predetermined lighting pattern when designated to start lighting. In particular, the illumination apparatus moves independently of a camera to adjust a distance to a workpiece.

Abstract: A process of forming an epitaxial substrate for a high electron mobility transistor (HEMT) is disclosed. The process includes a sequential growth of a buffer layer, a barrier layer, and a cap layer, where those layers are made of nitride semiconductor materials. A feature of the process is that nitrogen (N2) is added to a source material for the group V element. Preferably, the process supplies the nitrogen (N2) within. the reaction chamber through a supply line common to the source material for the group V element.

Abstract: To facilitate adjusting of a distance from an inspection target to an illumination section by providing a movable illumination section that is movable independently of the imaging section. An illumination apparatus has a plurality of LEDs arranged in a substantially annular form, a light diffusion member for diffusing light emitted from the plurality of LEDs, and a lighting control part for lighting the plurality of light sources in accordance with a predetermined lighting pattern when designated to start lighting. In particular, the illumination apparatus moves independently of a camera to adjust a distance to a workpiece.

Abstract: A semiconductor device having a via hole whose side surface is covered with nitride metals is disclosed. The via hole is formed within an insulating region that surrounds a conductive region, where both regions are made of nitride semiconductor materials. The via hole is filled with a back metal and in side surfaces thereof is covered with a nitride metal which is heat treated at a preset temperature for a preset period. Nitrogen atoms in the nitride metal diffuse into the nitride semiconductor materials in the insulating regions and compensate nitride vacancies therein. The interface between the nitride metal and the nitride semiconductor material is converted into an altered region that shows high resistivity enough to suppress currents leaking from the via hole metal to the conductive region of the nitride semiconductor material.

Abstract: This invention concerns a surface patterned frozen dessert having a streamlined pattern of multiple colors of sauce material on the top surface of an ice cream layer, such that no bleeding of the sauce material colors into the ice cream layer is apparent from the outside in normal ice cream storage conditions and the ice cream material is not exposed to the outside to become unsightly, as well as a manufacturing method and apparatus for same. The surface patterned frozen dessert has, within a cup, an ice cream layer, a first sauce material layer on said ice cream layer, and a second sauce layer of a different color from the first sauce layer, partially injected on the top surface of the first sauce layer after the first sauce material, whereby the first sauce layer and second sauce layer are stirred together to form an inscribed pattern.

Abstract: To facilitate adjusting of a distance from an inspection target to an illumination section by providing a movable illumination section that is movable independently of the imaging section. An illumination apparatus has a plurality of LEDs arranged in a substantially annular form, a light diffusion member for diffusing light emitted from the plurality of LEDs, and a lighting control part for lighting the plurality of light sources in accordance with a predetermined lighting pattern when designated to start lighting. In particular, the illumination apparatus moves independently of a camera to adjust a distance to a workpiece.

Abstract: There is provided an external illumination apparatus capable of increasing flexibility of illumination, the external illumination apparatus including a CPU and a memory so as to control lighting of a plurality of illumination LEDs with reference to a lighting pattern stored in the memory, wherein this lighting control is executed by a lighting command from an optical information reading apparatus.

Abstract: In order to improve read stability, a printing condition is set based on not visual read of a user, but read with an optical information reading apparatus. A printing quality evaluation apparatus includes: an image acquiring section that acquires an image; a symbol extracting section that extracts the symbol in which the printing quality can be evaluated from the captured images acquired by the image acquiring section; a printing quality evaluation section that evaluates the printing quality of the symbol extracted by the symbol extracting section; an identification information recognition section that recognizes the identification information identifying each printing condition of the symbol; and an evaluation output section that outputs the identification information, which is recognized by the identification information recognition section, and an evaluation result of the printing quality of the printing quality evaluation section according to the symbol extracted by the symbol extracting section.