Abstract: A MEMS microphone includes a substrate having a cavity, a back plate disposed over the substrate and having a plurality of acoustic holes, a diaphragm disposed over the substrate to cover the cavity, the diaphragm being disposed under the back plate to be spaced apart from the back plate, including venting holes communicating with the cavity, and sensing an acoustic pressure to create a displacement, a first insulation layer interposed between the substrate and the diaphragm to support the diaphragm, and the first insulation layer including an opening formed at a position corresponding to the cavity to expose the diaphragm, a second insulating layer formed over the substrate to cover an upper face of the back plate and an insulating interlayer formed between the first insulation layer and the second insulation layer, and the insulation interlayer being located outside the diaphragm and supporting the second insulation layer to make the back plate be spaced from the diaphragm.

Abstract: A MEMS microphone includes a substrate having a cavity, a back plate disposed over the substrate and having a plurality of acoustic holes, a diaphragm disposed between the substrate and the back plate, and an anchor extending from a circumference of the diaphragm to be connected with an end portion of the diaphragm. The diaphragm is spaced apart from the substrate and the back plate to covers the cavity, and the diaphragm senses an acoustic pressure to generate a displacement. The anchor extends from a circumference of the diaphragm to be connected with an end portion of the diaphragm, and is connected with the substrate to support the diaphragm. Thus, the MEMS microphone can prevent a portion of an insulation layer located around the anchor from remaining and can prevent a buckling phenomenon of the diaphragm from occurring.

Abstract: A MEMS microphone includes a substrate having a cavity, a back plate disposed over the substrate, a diaphragm being disposed between the substrate and the back plate and being spaced apart from the substrate and the back plate and at least one anti-buckling portion provided between the substrate and the diaphragm. The diaphragm covers the cavity and the diaphragm senses an acoustic pressure to create a displacement. The anti-buckling portion is configured to temporarily support the diaphragm in case of a warpage of the diaphragm to prevent a buckling of the diaphragm. Thus, the MEMS microphone can prevent the diaphragm from generating a warpage by more than a predetermined degree, so that the diaphragm can have a tensile stress and the buckling phenomenon of the diaphragm can be prevented.

Abstract: A semiconductor gas sensor includes a substrate having a cavity, a first insulation layer formed on the substrate, including an exposure hole formed at a position corresponding to the cavity and a peripheral portion of the cavity, a second insulation layer formed on the first insulation layer, covering the exposure hole, a heating electrode formed on the second insulation layer, being formed at a position corresponding to the cavity, a sensing electrode formed over the heating electrode, being electrically insulated from the heating electrode, a detection layer covering the sensing electrode, being capable of having a variable resistance when acting with a predetermined kind of gas, and a vent hole formed by penetrating the second insulation layer to communicate with the exposure hole, and the vent hole being capable of dissipating heat from the heating electrode in a upward direction with respect to the substrate.

Abstract: In embodiments, a semiconductor gas sensor includes a substrate having a cavity, a first insulation layer formed on the substrate, including an exposure hole formed at a position corresponding to the cavity and a peripheral portion of the cavity, a second insulation layer formed on the first insulation layer, covering the exposure hole, a heating electrode formed on the second insulation layer, being formed at a position corresponding to the cavity, a sensing electrode formed over the heating electrode, being electrically insulated from the heating electrode and a detection layer covering the sensing electrode, being capable of having a variable resistance when acting with a predetermined kind of gas.

Abstract: A method of manufacturing a backside illumination image sensor includes forming an epitaxial layer on a silicon (Si) substrate, and forming an inter-metal dielectric (IMD) on the epitaxial layer. The method includes forming a trench in one side region of the epitaxial layer, forming an insulating layer at a side wall and bottom of the trench, forming a color filter and microlens on the IMD, bonding a support wafer onto the IMD with the color filter and microlens formed therein, and/or removing the Si substrate.

Abstract: A capacitive device includes a first capacitor including a first wiring layer, a first dielectric film, a first conductive layer, a first insulating layer on the first capacitor, a second capacitor on the first insulating layer including a second conductive layer, a second dielectric film, and a third conductive layer, a second insulating layer on the second capacitor, a second wiring layer on the second insulating layer including first and second connection wires, a first via connecting the first wiring layer to the second conductive layer, a second via connecting the third conductive layer to the second wiring layer, a third via connecting the first connection wire to the first conductive layer, and a fourth via connecting the second connection wire to the first wiring layer.

Abstract: A method of manufacturing a backside illumination image sensor includes forming an epitaxial layer on a silicon (Si) substrate, and forming an inter-metal dielectric (IMD) on the epitaxial layer. The method includes forming a trench in one side region of the epitaxial layer, forming an insulating layer at a side wall and bottom of the trench, forming a color filter and microlens on the IMD, bonding a support wafer onto the IMD with the color filter and microlens formed therein, and/or removing the Si substrate.

Abstract: A capacitive device includes a first capacitor including a first wiring layer, a first dielectric film, a first conductive layer, a first insulating layer on the first capacitor, a second capacitor on the first insulating layer including a second conductive layer, a second dielectric film, and a third conductive layer, a second insulating layer on the second capacitor, a second wiring layer on the second insulating layer including first and second connection wires, a first via connecting the first wiring layer to the second conductive layer, a second via connecting the third conductive layer to the second wiring layer, a third via connecting the first connection wire to the first conductive layer, and a fourth via connecting the second connection wire to the first wiring layer.

Abstract: A M-I-M capacitor semiconductor device capable of enhancing the reliability and capacitance of a capacitor and maximizing the integration density of the device, and a method of fabricating the same are disclosed. The semiconductor device includes a semiconductor substrate, a capacitor lower metal layer formed over the semiconductor substrate, a SiN capacitor dielectric layer having a thickness of approximately 30 nm or less formed over the capacitor lower metal layer, and a capacitor upper metal layer formed over a portion of the capacitor dielectric layer and overlapping with the capacitor lower metal layer.

Abstract: A method of manufacturing a CMOS image sensor manufacturing includes forming a plurality of metal pads over a semiconductor substrate; electrically connecting the metal pads to lower conductive film patterns of multi-layer metal wires using metal contacts; depositing an insulation film over the metal pads; patterning the insulation film to expose at least a portion of the upper surface of the metal pads; and removing impurities from an uppermost surface of the metal pads.

Abstract: A method for fabricating an image sensor. The method may include forming a gate, a photo diode, and a floating diffusion region on a pixel region of a semiconductor substrate; forming an oxide film on the pixel region and on an edge region of the semiconductor substrate; forming a sacrificial oxide layer by etching the oxide film using a first photoresist pattern as a mask; forming a metal layer on the first photoresist pattern, the gate, and the floating diffusion region; forming a salicide layer on the gate and the floating diffusion region; etching a remaining non-salicided portion of the metal layer, the first photoresist pattern, and the sacrificial oxide layer; forming an interlayer insulating film on the semiconductor substrate and planarizing the interlayer insulating film; and forming contact holes and forming an edge open part by etching the interlayer insulating film using a second photoresist pattern as a mask.

Abstract: A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes a gate insulating layer with a high dielectric constant (k) and a polysilicon layer on a gate metal layer. The gate metal layer can include silicon atoms. Electron mobility can be improved, and production residue and damage can be minimized.

Abstract: A method for forming a metal line in a semiconductor device may include forming a silicon (Si) monolayer as an etching prevention layer over an exposed portion of a lower metal layer and sidewalls of an upper metal layer, middle metal layer, and the entire surface of curved photoresist patterns.

Abstract: Semiconductor devices and methods of fabricating semiconductor devices are disclosed. A disclosed semiconductor device includes a silicon substrate, a source region and a drain region. A gate electrode is formed on the silicon substrate. Also, a metal silicide layer is formed on each of the gate electrode, the source region, and the drain region. The metal silicide layer has a thickness uniformity of about 1˜20%. A disclosed fabrication method includes forming a metal layer on a silicon substrate having a gate electrode, a source region, and a drain region; performing a plasma treatment on the metal layer; forming a protective layer on the metal layer; and heat treating the silicon substrate on which the protective layer is formed to thereby form a metal silicide layer. A gas that includes nitrogen is used as a plasma gas during the plasma treatment.

Abstract: A heat exchanger is provided. The heat exchanger includes a plurality of aluminum tubes formed of aluminum, each of the aluminum tubes including a plurality of grooves that are formed on an inner circumferential surface of each of the aluminum tubes and that extend along a longitudinal direction of the aluminum tubes; and a plurality of heat transfer fins coupled to the aluminum tubes. The heat exchanger may contribute to the reduction of the manufacturing cost, may provide high heat transfer performance and may prevent a coolant leak.

Abstract: A method for fabricating a semiconductor device, including forming a gate insulating layer and a gate electrode on a substrate; forming insulating layer sidewalls at sides of the gate electrode; forming source/drain regions in surface portions of the substrate that are located, respectively, at sides of the gate electrode; forming a conductive silicide layer on the entire surface of the substrate; and selectively removing the silicide layer from areas other than the gate electrode and the source/drain regions of the substrate. The conductive silicide layer may be made by forming a silicon layer on an entire surface of the substrate; forming a conductive layer on the silicon layer; and thermal-processing the substrate such that the conductive layer reacts with the silicon layer.

Abstract: A method of manufacturing a semiconductor device employs a PEALD method including using an organometallic Ta precursor to form a TaN thin film. As a result, a conformal TaN diffusion barrier may be formed at a temperature of 250° C. or higher, so that impurities are reduced and density is increased in the TaN thin film.

Abstract: The embodiment provides a distributor and refrigerant circulation system comprising the same. A distributor includes: an inlet flow passage on which liquid and gaseous refrigerants that flows in from the inlet pipe flows; a distribution flow passage that receives the liquid and gaseous refrigerants which flow in to the inlet flow passage and distributes the received liquid and gaseous refrigerants to the plurality of outlet pipes; and a distribution projection that evenly distributes the refrigerant to the outlet pipe through the distribution unit.

Abstract: The embodiment provides a connection pipe and a refrigerant flowing system comprising the same. The connection pipe and the refrigerant flowing system include: a connection pipe main body of which both ends are coupled to first and second refrigerant pipes through which refrigerant is flowed and that has a channel through which refrigerant transferred from the first refrigerant pipe to be transferred to the second refrigerant pipe is flowed; and a flow interfering part that is provided on the channel to interfere the flow of the refrigerant in the direction transferred from the first refrigerant pipe to the channel.