Abstract: A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.

Abstract: A piping system structure of semiconductor equipment comprises a vessel, a nozzle and a pneumatic pump. The pneumatic pump drains a fluid material in the vessel and transmits the fluid material to the nozzle to spray on the wafer. The piping system structure further comprises a first sensor, a second sensor and a processor. Wherein, the first sensor and the second sensor are disposed at the pneumatic pump to sense whether a valve in the pneumatic pump is at a first position or at a second position and generate a first sensing signal and a second sensing signal to the processor, respectively. When the difference between the time of receiving the first sensing signal and the time of receiving the second sensing signal exceeds a preset value, the processor determines that the operation of the pump is abnormal. Then, the processor controls the semiconductor equipment to generate a warning message.

Abstract: A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.

Abstract: A method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes includes forming a transparent conductive film on a GaN layer, forming a transparent conductive hetero-junction of opposing electrical characteristics on a transparent conductive film on the surface of the GaN layer through an ion diffusion process, and laying a metallic thick film on the surface of the transparent conductive hetero-junction for wiring process in the later fabrication operation. Thus through the electron and hole tunneling effect in the ion diffusion process the Fermi level of the hetero-junction may be improved to form an ohmic contact electrode.

Abstract: A detection circuit that includes a first relay coupled to a solenoid valve for sensing an operation state of the solenoid valve, a second relay coupled to the first relay adapted for activating in response to activation of the first relay, a sensor for detecting an operation state of a device, a third relay coupled to the sensor, wherein the senor is adapted for providing a signal to activate the third relay, and wherein the second relay is deactivated in response to the activation of the third relay, and a fourth relay coupled to the first and second relays, wherein the fourth relay is activated when the first relay is deactivated and the second relay is activated.

Abstract: A method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes includes forming a transparent conductive film on a GaN layer, forming a transparent conductive hetero-junction of opposing electrical characteristics on a transparent conductive film on the surface of the GaN layer through an ion diffusion process, and laying a metallic thick film on the surface of the transparent conductive hetero-junction for wiring process in the later fabrication operation. Thus through the electron and hole tunneling effect in the ion diffusion process the Fermi level of the hetero-junction may be improved to form an ohmic contact electrode.

Abstract: A method for monitoring overlay alignment on a wafer that includes identifying a target machine, identifying a target process, identifying a plurality of critical layers, obtaining a plurality of overlay data from at least one of designated registration patterns on the wafer as baseline data, providing a plurality of reference overlay data, correlating the plurality of the reference overlay data with the baseline data to obtain overlay error, comparing the overlay error with specifications of the target machine, accepting the baseline data when the overlay error is within the specifications, and performing overlay alignment monitoring with the baseline data.

Abstract: The present invention relates to a method to control the nucleation and transverse motion of 180° inverted domains in ferroelectric nonlinear crystals. It includes a process composing of a high temperature oxidation of the first metal layer and a pulsed field poling of the second electrodes. The main object of present invention is to provide domain inversion of ferroelectric nonlinear crystals with field control the nucleation and transverse motion of inverted domains and two-dimension nonlinear photonic crystals for time-domain multiple-wave simultaneous lasers and space filter function. Another object of present invention is to provide space-charge effect for screened edge field beneath the metal electrode, The other object of present invention is to provide the constraint of inverted domain nucleation in the oxidized electrode for arbitrarily geometrical form of 2D ferroelectric lattice structure.

Abstract: A method for limiting the transmission of light through a material is disclosed. In the method, a layer composed of a hyperbranched polymer formed via a copolycyclotrimerization reaction is interposed between a light source and the material. Also provided is a method for emitting light comprising exciting the hyperbranched polymer. In addition, methods for limiting the transmission of light and for emitting light using hyperbranched polymers formed by homopolycyclotrimerization reactions are disclosed. A new class of hyperbranched polymers produced by copolycyclotrimerization is also disclosed.

Abstract: The present invention relates to a method to control the nucleation and transverse motion of 180° inverted domains in ferroelectric nonlinear crystals. It includes a process composing of a high temperature oxidation of the first metal layer and a pulsed field poling of the second electrodes. The main object of present invention is to provide domain inversion of ferroelectric nonlinear crystals with field control the nucleation and transverse motion of inverted domains and two-dimension nonlinear photonic crystals for time-domain multiple-wave simultaneous lasers and space filter function. Another object of present invention is to provide space-charge effect for screened edge field beneath the metal electrode, The other object of present invention is to provide the constraint of inverted domain nucleation in the oxidized electrode for arbitrarily geometrical form of 2D ferroelectric lattice structure.

Abstract: A detection circuit that includes a first relay coupled to a solenoid valve for sensing an operation state of the solenoid valve, a second relay coupled to the first relay adapted for activating in response to activation of the first relay, a sensor for detecting an operation state of a device, a third relay coupled to the sensor, wherein the senor is adapted for providing a signal to activate the third relay, and wherein the second relay is deactivated in response to the activation of the third relay, and a fourth relay coupled to the first and second relays, wherein the fourth relay is activated when the first relay is deactivated and the second relay is activated.

Abstract: A method is described for determining from a measurement of fluorescence intensity the concentration of ethanol in water. This end is attained by obtaining data which establishes a relationship between an intensity of fluorescence in the spectral region 490-650 nm for a solution obtained by mixing a fluorescent agent in a solvent, and an intensity of fluorescence in the spectral region 490-650 nm measured for a calibration sample obtained by mixing the fluorescent agent's solution with a water ethanol solution having a known concentration of ethanol.

Abstract: Hyperbranched organometallic polymers, including poly [1,1′-ferrocenylenesilynes], poly [1,1′-ferrocenylene-(alkyl)silynes], poly [1,1′-ferrocenylene(alkenyl)silynes] and poly [1,1′-ferrocenylene(aromatic)silynes], are useful as precursors to certain ceramic materials. Processes for the preparation of such polymers and the preparation of ceramic materials from such polymers are described, as are the resulting ceramic materials and their use as ferromagnetic materials and electrically conductive materials.

Abstract: A method for monitoring overlay alignment on a wafer that includes identifying a target machine, identifying a target process, identifying a plurality of critical layers, obtaining a plurality of overlay data from at least one of designated registration patterns on the wafer as baseline data, providing a plurality of reference overlay data, correlating the plurality of the reference overlay data with the baseline data to obtain overlay error, comparing the overlay error with specifications of the target machine, accepting the baseline data when the overlay error is within the specifications, and performing overlay alignment monitoring with the baseline data.

Abstract: A method for limiting the transmission of light through a material is disclosed. In the method, a layer composed of a hyperbranched polymer formed via a copolycyclotrimerization reaction is interposed between a light source and the material. Also provided is a method for emitting light comprising exciting the hyperbranched polymer. In addition, methods for limiting the transmission of light and for emitting light using hyperbranched polymers formed by homopolycyclotrimerization reactions are disclosed. A new class of hyperbranched polymers.produced by copolycyclotrimerization is also disclosed.

Abstract: A method of forming oxide from nitride, in which the oxidation is enhanced by illuminating the nitride material with UV light. This method produces a rapid growth of oxide and allows for the monitoring of the oxide thickness in situ. The method comprises the steps of (i) placing the nitride material on an illuminating holder; (ii) dipping the nitride material and the illuminating holder in an electrolyte; and (iii) illuminating the nitride material with a light having an energy larger than the energy gap of the nitride material. The nitride material can be connected to a conductive electrode located in the electrolyte via a galvanometer to monitor a photo current generated by the oxidation of the nitride material so as to monitor the thickness of the oxide formed on the nitride material in situ. A metal coating can be coated on the nitride material to define the oxide forming region. The pH value of the electrolyte is in a range of approximately 3 to 10, and is preferably about 3.5.

Abstract: Optical glasses and polymers are described that incorporate homogeneously dispersed fullerene molecules. The resultant materials may be used as optical filters, the cut-off frequency being easily adjustable by changing the fullerene content. To prepare glasses fullerene molecules are firstly functionalized by amination prior to being incorporated into a sol-gel process to prepare the glass. To prepare polymers a pre-existing polymer may be subject to fullerenation, or fullerene may be copolymerized with a selected monomer.

Abstract: An air hammer type impact tester including a machine base having a pressure accumulation chamber with an air inlet, a straight tube vertically suspending in the pressure accumulation chamber, a test platform mounted on the machine base and having a replaceable buffer block adapted to support the sample to be tested, a hammer block moved in the straight tube to strike the buffer block against the test sample, an air pump operated to pump air into the pressure accumulation chamber, a diaphragm moved between the bottom end of the straight tube and the air inlet of the pressure accumulation chamber, the diaphragm being forced upwards by compressed air to close the bottom end of the straight tube when compressed air is pumped from the air pump into the pressure accumulation chamber, the diaphragm being forced downwardly away from the bottom end of the straight tube by air pressure when the inside pressure of the pressure accumulation chamber surpasses a predetermined value, permitting the inside pressure of the pr

Abstract: A method for etching nitride is provided, by which the etching rate and the roughness of the etching surface can be powerfully controlled, and by which the etching depth can be in-situ monitored. The etching method comprises the steps of: (i) coating a first electrode on a nitride chip; (ii) mounting the nitride chip on a holding device; (iii)dipping the holding device, the nitride chip and the first electrode in electrolysis liquid; (iv) irradiating the nitride chip with a UV light having a wavelength shorter than 254 nm; and (v) connecting the first electrode to a second electrode dipped in the electrolysis liquid by a galvanometer to in-situ monitor the etching current, so as to in-situ control the etching depth.