Abstract: A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.

Abstract: The embodiment provides an antireflection structure and a method for fabricating the same. The antireflection structure includes a substrate having a plurality of protruding structures adjacent to one another, thereby allowing light to transmit through. And a dielectric structural layer covers a plurality of the protruding structures.

Abstract: A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.

Abstract: Provided are an apparatus and a method for converting laser energy, characterized by employing an optical parametric oscillator for converting light of a green laser wavelength into light of a blue or red laser wavelength via a phase matching structure, by means of a non-linear optical crystal having a one-dimensional quasi-phase matching structure with a single grating period under appropriately-controlled temperature conditions. The non-linear optical crystal with the single grating period facilitates optical parametric oscillation and second harmonic generation to thereby enable green-to-blue wavelength conversion with a slope efficiency greater than 20%. Under 400 mW green light pump laser action, a periodically poled LiTaO3 crystal with a crystal length of 15 mm and without a resistant reflective plating film on its end face is capable of outputting a blue light laser beam of 56 mW.

Abstract: A method for implementing remote control functionality with a mouse in a video playback system includes the steps of identifying all selectable buttons within the page, depressing a key on a mouse device while the mouse is positioned over a first button currently selected, dragging the mouse device in the direction of a second button to be selected while depressing the key, and releasing the key on the mouse device once the mouse device is positioned over the second button to select the second button.

Abstract: A thin film transistor includes a channel layer. The channel layer has a plurality of stacked oxide layers. The oxide layers are made of at least two different oxide materials. The channel layer modulates a threshold voltage of the thin film transistor. An insulating interface layer is formed between the channel layer and an insulating dielectric layer, thereby transforming the thin film transistor from a depletion type transistor to an enhanced type transistor.

Abstract: A phase-change material and a memory unit using the phase-change material are provided. The phase-change material is in a single crystalline state and includes a compound of a metal oxide or nitroxide, wherein the metal is at least one selected from a group consisting of indium, gallium and germanium. The memory unit includes a substrate; at least a first contact electrode formed on the substrate; a dielectric layer disposed on the substrate and formed with an opening for a layer of the phase-change material to be formed therein; and at least a second contact electrode disposed on the dielectric layer. As the phase-change material is in a single crystalline state and of a great discrepancy between high and low resistance states, the memory unit using the phase-changed material can achieve a phase-change characteristic rapidly by pulse voltage and avert any incomplete reset while with a low critical power.

Abstract: A method for limiting the transmission of light through a material is disclosed. In the method, a layer composed of a hyperbranched polymer formed via a copolycyclotrimerization reaction is interposed between a light source and the material. Also provided is a method for emitting light comprising exciting the hyperbranched polymer. In addition, methods for limiting the transmission of light and for emitting light using hyperbranched polymers formed by homopolycyclotrimerization reactions are disclosed. A new class of hyperbranched polymers produced by copolycyclotrimerization is also disclosed.

Abstract: A method and system for assessing keyword usage based on frequency of usage of the keywords during various periods is provided. A keyword usage measurement system is provided with the frequency of keywords during various periods. The measurement system then calculates a recent usage score for a keyword by combining a frequency impulse score for the keyword with a frequency weight for the keyword. The frequency impulse score for a keyword indicates whether a recent change in the frequency of the keyword has occurred. The frequency weight for a keyword indicates a recent measure of the frequency of the keyword.

Abstract: A phase-change material and a memory unit using the phase-change material are provided. The phase-change material is in a single crystalline state and includes a compound of a metal oxide or nitroxide, wherein the metal is at least one selected from a group consisting of indium, gallium and germanium. The memory unit includes a substrate; at least a first contact electrode formed on the substrate; a dielectric layer disposed on the substrate and formed with an opening for a layer of the phase-change material to be formed therein; and at least a second contact electrode disposed on the dielectric layer. As the phase-change material is in a single crystalline state and of a great discrepancy between high and low resistance states, the memory unit using the phase-changed material can achieve a phase-change characteristic rapidly by pulse voltage and avert any incomplete reset while with a low critical power.

Abstract: A light-scattering structure with micron-scale or submicron-scale protruding portions is provided to improve the light extraction efficiency of light emitting devices. The protruding portions function as scattering sites and can be assembled closely. A method of forming a light-scattering structure is also provided, wherein all the conventional substrate materials can be used for the substrate of the light-scattering structure, and scattering sites of submicron-scale, micron-scale or larger size can be fabricated.

Abstract: A method and system for assessing keyword usage based on frequency of usage of the keywords during various periods is provided. A keyword usage measurement system is provided with the frequency of keywords during various periods. The measurement system then calculates a recent usage score for a keyword by combining a frequency impulse score for the keyword with a frequency weight for the keyword. The frequency impulse score for a keyword indicates whether a recent change in the frequency of the keyword has occurred. The frequency weight for a keyword indicates a recent measure of the frequency of the keyword.

Abstract: The present invention provides a method for providing multimedia services. The method includes receiving, at an application server, a request for at least one multimedia service from a first end-user device and determining whether said at least one multimedia service is provided by a second end user device. The method also includes providing a request for the at least one multimedia service to the second end user device in response to determining that the at least one multimedia service is provided by the second end-user device.

Abstract: MIDI compression and decompression methods that reduce the size of a standard MIDI file and maintains information to play the MIDI music. The exemplary method of the invention makes use of the high correlation and repetitions between a look-ahead MIDI event and previous set of MIDI events. An adjustable size Lempel-Ziv-like MIDI Event Search Window (MESW) is created during the compression and decompression process to allow searching of matched events or event elements in previous window size of MIDI events. Further reduction of the MIDI events can be made by discarding the matched events in the event search window. Therefore, with 4-bit of MIDI event search window, the number of MIDI events stored in the window can be more than 16.

Abstract: A cable tie includes: a belt body with a gear portion and a through portion. The through portion with a cross-hole forms on one end of the belt body and there is a first against-block and a second against-block forms inside the cross-hole and protrudes in different direction. Those against-blocks can against with the gear on the belt body.

Abstract: A method for implementing remote control functionality with a mouse in a video playback system includes the steps of identifying all selectable buttons within the page, depressing a key on a mouse device while the mouse is positioned over a first button currently selected, dragging the mouse device in the direction of a second button to be selected while depressing the key, and releasing the key on the mouse device once the mouse device is positioned over the second button to select the second button.

Abstract: A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.

Abstract: A piping system structure of semiconductor equipment comprises a vessel, a nozzle and a pneumatic pump. The pneumatic pump drains a fluid material in the vessel and transmits the fluid material to the nozzle to spray on the wafer. The piping system structure further comprises a first sensor, a second sensor and a processor. Wherein, the first sensor and the second sensor are disposed at the pneumatic pump to sense whether a valve in the pneumatic pump is at a first position or at a second position and generate a first sensing signal and a second sensing signal to the processor, respectively. When the difference between the time of receiving the first sensing signal and the time of receiving the second sensing signal exceeds a preset value, the processor determines that the operation of the pump is abnormal. Then, the processor controls the semiconductor equipment to generate a warning message.

Abstract: A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.

Abstract: A method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes includes forming a transparent conductive film on a GaN layer, forming a transparent conductive hetero-junction of opposing electrical characteristics on a transparent conductive film on the surface of the GaN layer through an ion diffusion process, and laying a metallic thick film on the surface of the transparent conductive hetero-junction for wiring process in the later fabrication operation. Thus through the electron and hole tunneling effect in the ion diffusion process the Fermi level of the hetero-junction may be improved to form an ohmic contact electrode.