Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.

Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.

Abstract: A method for scheduling data burst is provided. The method is adapted for a mobile apparatus. The method includes the following steps. Firstly, a data burst is generated, and a maximum delay time is calculated according to a delay constraint of the data burst. Next, whether to receive a downlink data burst before the maximum delay time is determined. If yes, a base station is requested to schedule the data burst to at least one available scheduling time near the downlink data burst. Afterwards, the data burst is sent according to the at least one available scheduling time.

Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.

Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a semiconductor structure may comprise: a first substrate structure; a III-nitride structure bonded with the first substrate structure; a plurality of air gaps formed between the first substrate structure and the III-nitride structure; and a III-oxide layer formed on surfaces around the air gaps, wherein a portion of the III-nitride structure including surfaces around the air gaps is transformed into the III-oxide layer by a selective photo-enhanced wet oxidation, and the III-oxide layer is formed between an untransformed portion of the III-nitride structure and the first substrate structure.

Abstract: Method and compositions for reducing the inflammation after cytokine exposure of an islet cell transplant without affecting the viability and potency are disclosed herein. The present invention describes a composition comprising Withaferin A (WA), a steroidal lactone derived from Withania somnifera to effectively block NF-kB activation in beta cells, minimize cytokine-induced cell death and improve survival of transplanted islets. The method of the present invention involves identifying a subject having islet cells in need of treatment; and providing a effective amount of a Withaferin A composition disposed in a pharmaceutically acceptable carrier in an amount sufficient to reduce the inflammation after cytokine exposure without affecting the viability and potency of the islet cell population.

Abstract: A second-harmonic generation nonlinear frequency converter includes a nonlinear optical crystal. The nonlinear optical crystal includes a plurality of sections. The sections connect to each other in sequence, and each section has a phase different from others. Each of the phases includes a positive domain and a negative domain. Each of the sections includes a plurality of quasi-phase-matching structures. The quasi-phase-matching structures connect to each other in sequence and have the same phase in one section.

Abstract: Vision-aided passive alignment systems and methods are provided that detect tilt misalignment of an optics system during the process of mounting the optics system on an upper surface of the circuit board and remove tilt misalignment to ensure that a lens of the optics system is precisely aligned with an optoelectronic device mounted on the upper surface of the circuit board.

Abstract: An optical phase modulation module and a projector comprising the same are provided. The optical phase modulation module comprises a transparent thin film with an electro-optic effect, a plurality of first upper electrodes, a plurality of second upper electrodes and a plurality of lower electrodes. The transparent thin film with the electro-optic effect has a top surface and a bottom surface. The first upper electrodes are formed on the top surface. The second upper electrodes are formed on the top surface and arranged alternately with the first upper electrodes. The lower electrodes are formed on the bottom surface. A first voltage difference exists between the first upper electrodes and the bottom electrodes, while a second voltage difference exists between the second upper electrodes and the bottom electrodes. Two different electric fields are produced within the transparent thin film with the electro-optic effect by the first voltage difference and the second voltage difference respectively.

Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a semiconductor structure may comprise: a first substrate structure; a III-nitride structure bonded with the first substrate structure; a plurality of air gaps formed between the first substrate structure and the III-nitride structure; and a III-oxide layer formed on surfaces around the air gaps, wherein a portion of the III-nitride structure including surfaces around the air gaps is transformed into the III-oxide layer by a selective photo-enhanced wet oxidation, and the III-oxide layer is formed between an untransformed portion of the III-nitride structure and the first substrate structure.

Abstract: A light emitting diode includes a substrate, a plurality of pillar structures, a filler structure, a transparent conductive layer, a first electrode, and a second electrode. These pillar structures are formed on the substrate. Each of the pillar structures includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layers are formed on the substrate. The pillar structures are electrically connected with each other through the first type semiconductor layers. The filler structure is formed between the pillar structures. The filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer. The first electrode is in contact with the transparent conductive layer. The second electrode is in contact with the first type semiconductor layer.

Abstract: Various embodiments of the present disclosure pertain to separating nitride films from growth substrates by selective photo-enhanced wet oxidation. In one aspect, a method may transform a portion of a III-nitride structure that bonds with a first substrate structure into a III-oxide layer by selective photo-enhanced wet oxidation. The method may further separate the first substrate structure from the III-nitride structure.

Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.

Abstract: A protective coating encapsulates bond pads disposed on a substrate of an optical communications module and extends in between the bond pads. The protective coating has characteristics that (1) increase the dielectric resistances between adjacent bond pads on the substrate, (2) protect the bond pads from moisture in the environment, and (3) prevents, or at least reduces, ion migration between adjacent bond pads. In this way, the protective coating prevents, or at least reduces, corrosion growth that can lead to impedance degradation and electrical shorts between adjacent bond pads.

Abstract: Various embodiments of the present disclosure pertain to separating nitride films from growth substrates by selective photo-enhanced wet oxidation. In one aspect, a method may transform a portion of a III-nitride structure that bonds with a first substrate structure into a III-oxide layer by selective photo-enhanced wet oxidation. The method may further separate the first substrate structure from the III-nitride structure.

Abstract: Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.

Abstract: A light emitting diode includes a substrate, a plurality of pillar structures, a filler structure, a transparent conductive layer, a first electrode, and a second electrode. These pillar structures are formed on the substrate. Each of the pillar structures includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first type semiconductor layers are formed on the substrate. The pillar structures are electrically connected with each other through the first type semiconductor layers. The filler structure is formed between the pillar structures. The filler structure and the second type semiconductor layers of the pillar structures are covered with the transparent conductive layer. The first electrode is in contact with the transparent conductive layer. The second electrode is in contact with the first type semiconductor layer.

Abstract: A second-harmonic generation nonlinear frequency converter includes a nonlinear optical crystal. The nonlinear optical crystal includes a plurality of sections. The sections connect to each other in sequence, and each section has a phase different from others. Each of the phases includes a positive domain and a negative domain. Each of the sections includes a plurality of quasi-phase-matching structures. The quasi-phase-matching structures connect to each other in sequence and have the same phase in one section.

Abstract: Method and compositions for reducing the inflammation after cytokine exposure of an islet cell transplant without affecting the viability and potency are disclosed herein. The present invention describes a composition comprising Withaferin A (WA), a steroidal lactone derived from Withania somnifera to effectively block NF-kB activation in beta cells, minimize cytokine-induced cell death and improve survival of transplanted islets. The method of the present invention involves identifying a subject having islet cells in need of treatment; and providing a effective amount of a Withaferin A composition disposed in a pharmaceutically acceptable carrier in an amount sufficient to reduce the inflammation after cytokine exposure without affecting the viability and potency of the islet cell population.

Abstract: An overload protection device for LED luminary includes a light bulb connected in front of a circuit that has a single or a group of LED luminaries thereon. The light bulb forms an energy consumption device. The energy consumption device can change the consumption value automatically to protect the LED luminary.