Abstract: A non-transitory computer readable medium, a flash controller and a method for state responsive encoding and programming; the method may include encoding an information entity by applying a state responsive encoding process to provide at least one codeword; wherein the state responsive encoding process is responsive to a state of flash memory cells; and programming the at least one codeword to at least one group of flash memory cells by applying a state responsive programming process that is responsive to the state, the state being either an estimated state or an actual state.

Abstract: Apparatus and methods for operating a flash device characterized by use of Lee distance based codes in a flash device so as to increase the number of errors that can be corrected for a given number of redundancy cells, compared with Hamming distance based codes.

Abstract: A flash memory controller, a non-transitory computer readable medium and a method for reading flash memory cells of a flash memory module. The method may include calculating a group of read thresholds to be applied during a reading operation of a set of flash memory cells that belong to a certain row of the flash memory module based upon a compressed representation of reference read thresholds associated with multiple reference rows of the flash memory module; and reading the set of flash memory cells by applying the group of reference read thresholds to provide read results.

Abstract: A system, computer readable program, and method for programming flash memory, the method includes: providing multiple pairs of most significant bit (MSB) page uncoded bit error rates (UBERs) and least significant bit (LSB) page UBERs; selecting a selected MSB page code rate and a selected LSB page code rate so that a selected MSB page UBER associated with the selected MSB page code rate and a selected LSB page UBER associated with the selected LSB page code rate support a highest average UBER out of the multiple pairs of MSB page UBERs and LSB page UBERs, wherein the selected MSB page code rate and the selected LSB page code rate are obtainable under a desired code rate constraint; and determining an encoding and programming scheme that may be based on the selected MSB page UBER, the selected MSB code rate, the selected LSB page UBER and the selected LSB code rate.

Abstract: A decoder, an encoder, a decoding method and an encoding method are provided. The encoding method includes receiving data; generating a set of first codewords by applying a first encoding process on the received data; and performing a second encoding process on a folded version of each first codeword to provide a set of second codewords, wherein a folded version of a first codeword is representative of a storage of the first codeword in a two dimensional memory space, wherein the second codeword comprises redundancy bits.

Abstract: A system, a method and a non-transitory computer readable medium are disclosed. The non-transitory computer readable medium may store instructions for: (I) interleaving at least two portions of a first codeword of a group of codewords between at least two flash memory planes while violating at least one ordering rule out of (a) an even odd ordering rule, (b) a programming type ordering rule, and (c) a codeword portions ordering rule; and (II) interleaving different portions of other codewords of the group of codewords between multiple flash memory planes while maintaining the even odd ordering rule, the programming type ordering rule and the codeword portions ordering rule. The at least two portions may be programmed to rows in different flash memory blocks, and the flash memory planes may belong to the same or multiple flash memory dies. The programming type ordering may define different decoupling sequence steps with sizes set for different programming types according to sensitivity to noise.

Abstract: A flash memory apparatus that may include a plurality of memory portions, and a controller operative to reserve for data retention purposes, for at least a first duration of time, only certain memory portions; allocate data, during said first duration of time, only to said certain memory portions, thereby to define a retired memory portion for said first duration of time; determine to copy data from a certain memory portion to a retired memory portion based upon a relationship between effective cycle counts of the certain memory portion and the retired memory portion, an effective cycle count of any memory portion is responsive to a number of erase-write cycles and to an effective duration of time the memory portion had available to recover from erase-write cycles; and copy the data from the certain memory portion to the retired memory portion.

Abstract: A flash memory controller, a computer readable medium and a method for writing to a flash memory device, the method may include receiving multiple logical pages, each logical page having a logical address; determining to write a logical page into a selected physical page of the flash memory device; calculating a hash value for each logical page of the multiple logical pages in response to (a) a logical address of the logical page and (b) a physical page index, to provide multiple hash values of the multiple logical pages.

Abstract: A method for programming data into a first plurality of rows within a second plurality of erase sectors of a flash memory device using a programming process having at least one selectable parameter, the method includes characterizing each of at least one row subsets, each row subset comprising at least one row from among said first plurality of rows, thereby to generate at least one row subset characteristic value; and programming data into at least a portion of at least one individual row belonging to at least one row subset, using a programming process having at least one selectable parameter, said at least one selectable parameter being set at least partly in accordance with the row subset characteristic value characterizing a row subset to which said individual row belongs; wherein at least two row subsets of an array of flash memory cells differ from each other by their row subset characteristic values.

Abstract: A system that includes a multiplicity of flash memory cells; a reading apparatus; a writing apparatus for writing logical data from temporary memory into individual flash memory cells from among said multiplicity of flash memory cells, thereby to generate a physical representation of the logical data including a plurality of physical levels at least some of which represent, to said reading apparatus, at least one bit-worth of said logical data; and a special cell marking apparatus operative to store an earmark in at least an individual one of said multiplicity of flash memory cells for subsequent special treatment.

Abstract: A method comprising: obtaining a value of source data; encoding the value of source data using an encoding process, to thereby obtain an encoded value; calculating a difference value based on the value of source data and the encoded value; mapping the difference value to a multi-digit binary value associated with a voltage level based on a mapping scheme; causing a cell of a multi-level cell memory to store the mapped multi-digit binary value; and causing the encoded value of source data to be stored in the multi-level cell memory.

Abstract: A system for storing a plurality of logical pages in a set of at least one flash device, each flash device including a set of at least one erase block, the system comprising apparatus for distributing at least one of the plurality of logical pages over substantially all of the erase blocks in substantially all of the flash devices, thereby to define, for at least one logical page, a sequence of pagelets thereof together including all information on the logical page and each being stored within a different erase block in the set of erase blocks; and apparatus for reading each individual page from among the plurality of logical pages including apparatus for calling and ordering the sequence of pagelets from different erase blocks in the set of erase blocks.

Abstract: A system, method and computer readable medium for programming and reading flash memory cells. Respective first and second read operations may be performed while supplying respective first and second bias voltage to multiple flash memory cells, to provide respective first and second read results, where the first bias voltage may be higher then the second bias voltage, and providing a read outcome that may be responsive to the first read results and to the second read results. A programming method may include performing first and second programming operations while supplying respective first and second bias voltages to multiple flash memory cells. The programming method may further include performing the first programming operation while programming information mapped to a highest least significant bit positive lobe, and performing the second programming operation while programming information mapped to at least one other least significant bit positive lobe.

Abstract: A system and method for decoding data. Multi-dimensional encoded data may be received that potentially has errors. The multi-dimensional encoded data may encode each input bit in a set of input bits multiple times in multiple different dimensions to generate encoded bits. The encoded bits may be decoded in at least one of the multiple dimensions. If one or more errors are detected in a plurality of encoded bits in the at least one of the multiple dimensions, an intersection sub-set of the encoded data may be decoded that includes data encoding the same input bits encoded by the plurality of encoded bits in at least a second dimension of the multiple dimensions. The values of the input bits by decoding the intersection sub-set may be changed.

Abstract: A flash memory controller, a computer readable medium and a method for generating reliability information using a hard information interface, the method may include performing multiple read attempts, while using the hard information interface, of a plurality of flash memory cells to provide multiple read results; wherein each flash memory cell is read by providing a reference voltage to the flash memory cell; wherein a same reference voltage is provided during the multiple read attempts; and generating, for each flash memory cell, reliability information based upon multiple read results of the flash memory cell.

Abstract: A method for programming a plurality of data sequences into a corresponding plurality of flash memory functional units using a programming process having at least one selectable programming duration-controlling parameter controlling the duration of the programming process for a given data sequence, the method comprising providing at least one indication of at least one varying situational characteristic and determining a value for said at least one selectable programming duration-controlling parameter controlling the duration of the programming process for a given data sequence, for each flash memory functional unit, depending at least partly on said indication of said varying characteristic; and, for each individual flash memory functional unit from among said plurality of flash memory functional units, programming a sequence of bits into said individual flash memory functional unit using a programming process having at least one selectable parameter, said at least one selectable parameter being set at said

Abstract: A method, computer readable medium storing instructions and system for managing flash memory. Data sector are received and each is written into a data block of a buffer of a non-volatile memory device. Pointers in a data management structure are created for each data sector corresponding to an associated logical block and a storage location of the data sector in the buffer. When a predefined criterion is fulfilled before the buffer becomes full, a number of logical blocks to be merged is determined and data sectors corresponding to the number of logical blocks to be merged are written from the buffer to a primary non-volatile data storage memory of the non-volatile memory device.

Abstract: Systems and methods for determining program levels useful for reading cells of a flash memory, such as but not limited to detecting charge levels for the cells, obtaining joint conditional probability densities for a plurality of combinations of program levels of the cells; and determining program levels for the cells respectively such that an aggregated joint probability value of the joint conditional probability densities is maximized.

Abstract: A method for decoding a plurality of flash memory cells which are error correction-coded, the method may include: comparing physical values residing in the plurality of flash memory cells to a first set of decision thresholds thereby to provide a first item of comparison information for each of the plurality of cells; comparing physical values residing the plurality of flash memory cells to a second set of decision thresholds, thereby to provide a second item of comparison information for each of the plurality of cells, wherein neither of the first and second sets of decision thresholds is a subset of the other; and determining logical values for the plurality of flash memory cells by combining said first and second items of comparison information.

Abstract: A device, method, and computer readable medium for programming a codeword are presented. The method includes writing a first codeword portion to portions of nonvolatile memory rows, and writing a second codeword portion to portions of nonvolatile memory rows, wherein the first group of memory rows and the second group belong to non-overlapping groups. The device includes multiple nonvolatile memory rows, and a controller receiving a codeword comprising a first codeword portion and a second codeword portion. The controller writing the first codeword portion to portions of nonvolatile memory rows, and writing the second codeword portion to portions of nonvolatile memory rows, wherein the first group of nonvolatile memory rows differs and the second group of nonvolatile memory rows belong to non-overlapping groups, and the first and second groups of memory rows belong to multiple rows. A computer readable medium having stored thereon instructions performing methods described herein.