Abstract: A steel sheet may be used for hot-dip galvanizing capable of manufacturing hot-dip galvannealed steel sheet(s) with a high Si content and in which alloying unevenness is suppressed. Such a steel sheet for hot-dip galvanizing may include an internal oxide layer containing an oxide of Si between a surface layer of the steel sheet and a steel sheet base portion. The Si content in a chemical composition of the steel sheet may be 1.0 mass % or more. A solid solution Si amount from a surface of the steel sheet to a depth of 1 ?m measured at all four positions including positions of 10 mm, 30 mm, and 50 mm from an edge in a coil width direction and a position of a center in the coil width direction at a rear end in a rolling direction of the steel sheet for hot-dip galvanizing may be 1.4 wt. % or less.

Abstract: An antibacterial peptide P104 and a lysin LysP53 with broad-spectrum lytic activity and applications thereof are provided. The amino acid sequence of the antibacterial peptide P104 is shown as SEQ ID NO: 1, and the gene sequence of the antibacterial peptide P104 is shown as SEQ ID NO: 3. The amino acid sequence of the lysin LysP53 is shown as SEQ ID NO: 2, and the gene sequence of the lysin LysP53 is shown as SEQ ID NO: 4. The antibacterial peptide P104 and the lysin LysP53 have lytic activity against Gram-negative bacteria, such as Acinetobacter baumannii, Pseudomonas aeruginosa, Klebsiella pneumoniae and Escherichia coli The lysin LysP53 can be subjected to soluble expression by Escherichia coli, and the activity of the lysin is high. Therefore, they have good application prospects in the research and development of anti-infective drugs.

Abstract: The present disclosure provides a electrostatic discharge (ESD) protection circuit, coupled between a first reference terminal and a second reference terminal; the ESD protection circuit includes a first voltage divider, a second voltage divider, a first trigger circuit and a second trigger circuit. The first trigger circuit includes a first terminal and a second terminal, wherein the first terminal is coupled to the first reference terminal, and the second terminal is coupled to the second reference terminal via the first voltage divider. The second trigger circuit includes a first terminal and a second terminal, wherein the first terminal is coupled to the second reference terminal, the second terminal is coupled to the first reference terminal via the second voltage divider, and the second trigger circuit and the first trigger circuit are in parallel connection.

Abstract: A method for manufacturing a hot-dip galvanized steel sheet having a high Si content and good plating adhesion. The method for manufacturing a hot-dip galvanized steel sheet includes the following: hot-rolling a steel raw material having a Si content of 1.0 mass % or more and coiling a steel sheet at 500° C. to 700° C.; subjecting a surface of the steel sheet after the coiling to an oxidation treatment at a heating temperature of a steel sheet temperature of 750° C. or lower, and subsequently subjecting the surface to a reduction treatment; and subjecting the steel sheet after the reduction treatment to a hot-dip galvanizing treatment to form a Zn-plated layer on a surface of the steel sheet.

Abstract: A multi-phase coupled inductor includes a first iron core, a second iron core, and a plurality of coil windings. The first iron core includes a first body and a plurality of first core posts. The plurality of first core posts are connected to the first body. The second iron core is opposite to the first iron core. The second iron core and the first body are spaced apart from each other by a gap. The plurality of coil windings wrap around the plurality of first core posts, respectively. Each of the coil windings has at least two coils.

Abstract: A bonding method of package components and a bonding apparatus are provided. The method includes: providing at least one first package component and a second package component, wherein the at least one first package component has first electrical connectors and a first dielectric layer at a bonding surface of the at least one first package component, and the second package component has second electrical connectors and a second dielectric layer at a bonding surface of the second package component; bringing the at least one first package component and the second package component in contact, such that the first electrical connectors approximate or contact the second electrical connectors; and selectively heating the first electrical connectors and the second electrical connectors by electromagnetic induction, in order to bond the first electrical connectors with the second electrical connectors.

Abstract: Provided are catechol nanoparticles, catechol protein nanoparticles, and a preparation method and use thereof. The method includes: adding a tannin compound-containing natural herb medicine into water to obtain a mixture, and subjecting the mixture to heating reflux extraction to obtain a herb medicine extract and subjecting the herb medicine extract to fractionation to obtain the catechol nanoparticles.

Abstract: A bond head is provided. The bond head includes a bond base, a chuck member, and an elastic material. The chuck member protrudes from a surface of the bond base, and has a chuck surface formed with vacuum holes for holding a die using differential air pressure. In the direction parallel to the chuck surface, the width of the chuck surface is less than the width of the bond base and is equal to or greater than the width of the die. The elastic material is disposed over the chuck surface. The elastic material is arranged around the periphery of the chuck surface to cover edges and/or corners of the chuck surface.

Abstract: Exemplary deposition methods may include delivering a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the boron-containing precursor and the nitrogen-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the boron-containing precursor or the nitrogen-containing precursor may be greater than or about 2:1. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a boron-and-nitrogen material on a substrate disposed within the processing region of the semiconductor processing chamber.

Abstract: Various methods of reshaping and recycling thermoset polymers and composites containing thermoset polymers are provided. The methods involve the bond exchange reaction of exchangeable covalent bonds in the polymer matrix with a suitable small molecule solvent in the presence of a catalyst. In some aspects, the methods are applied to a carbon fiber reinforced polymer or a thermoset polymer where the thermoset polymer matrix includes a plurality of ester bonds. Using a small molecule alcohol, the methods provide for recycling one or both of the carbon fiber and the polymer, for welding two surfaces, or for repairing a damaged surface in the materials.

Abstract: Exemplary semiconductor processing methods may include providing one or more deposition precursors to a processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the processing region with the one or more deposition precursors. The methods may include forming a silicon-containing material on the substrate. The methods may include providing a fluorine-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting the silicon-containing material on the substrate with the fluorine-containing precursor to form a fluorine-treated silicon-containing material. The methods may include contacting the fluorine-treated silicon-containing material with plasma effluents of argon or diatomic nitrogen.

Abstract: Exemplary substrate support assemblies may include an electrostatic chuck body that defines a substrate support surface. The substrate support surface may define a plurality of protrusions that extend upward from the substrate support surface. A density of the plurality of protrusions within an outer region of the substrate support surface may be greater than in an inner region of the substrate support surface. The substrate support assemblies may include a support stem coupled with the electrostatic chuck body. The substrate support assemblies may include an electrode embedded within the electrostatic chuck body.

Abstract: Memory devices and methods of forming memory devices are described. Methods of forming electronic devices are described where carbon is used as the removable mold material for the formation of a DRAM capacitor. A dense, high-temperature (500° C. or greater) PECVD carbon material is used as the removable mold material, e.g., the core material, instead of oxide. The carbon material can be removed by isotropic etching with exposure to radicals of oxygen (O2), nitrogen (N2), hydrogen (H2), ammonia (NH3), and combinations thereof.

Abstract: Exemplary semiconductor processing methods may include providing an oxygen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include forming a plasma of the oxygen-containing precursor to produce oxygen-containing plasma effluents. The methods may include contacting a substrate housed in the processing region with the oxygen-containing plasma effluents. The substrate may include a boron-and-nitrogen-containing material overlying a carbon-containing material. The boron-and-nitrogen-containing material comprises a plurality of openings. The methods may include etching the carbon-containing material.

Abstract: An embodiment in accordance with the present invention provides a miniature microscope capable of performing in vivo, real-time imaging of multiple organ sites in awake and behaving animals (e.g. rodents). A microscope according to the present invention includes multiple optical contrast mechanisms (i.e. contrast arising from neural, hemodynamic and other physiological components). Exemplary contrast mechanisms include, but are not limited to fluorescence, hemoglobin level, deoxyhemoglobin level, and blood flow. The microscope is fully adaptable to in vitro and ex vivo imaging, can be customized to concurrently image at variable magnifications, conduct optogenetic/electrical/chemical stimulations, drug delivery, microdialysis, accompanied by electrical signal recording, wireless image transmission and charging.

Abstract: Exemplary substrate support assemblies may include a chuck body defining a substrate support surface. The substrate support surface may define a plurality of protrusions that extend upward from the substrate support surface. The substrate support surface may define an annular groove and/or ridge. A subset of the plurality of protrusions may be disposed within the annular groove and/or ridge. The substrate support assemblies may include a support stem coupled with the chuck body.

Abstract: A spacer for an immersion objective lens can be fabricated by pressing a set of sidewalls onto a mirror to form a liquid-tight cavity, filling the liquid-tight cavity with a first quantity of a UV-curable polymer, and curing the first quantity of the UV-curable polymer into a first solid mass that will be adhered to the mirror. The upper surface of the first solid mass is then positioned near the objective lens, with a second quantity of a UV curable polymer occupying the space between the first solid mass and the objective lens. Next, the position of the first solid mass is adjusted until it reaches a final position with respect to the objective lens. This adjustment may be assisted by checking the collimation of light reflected back through the mirror. The second quantity of the UV curable polymer is then cured.

Abstract: Disclosed are a method for controlling an unmanned aerial vehicle, a method for controlling outbound and return trips of an unmanned aerial vehicle, an unmanned aerial vehicle, a medium, and a control system. The method for controlling an unmanned aerial vehicle includes: obtaining, in a process of flying along a target course sent by a first ground station, first positioning auxiliary information sent by the first ground station; adjusting a flight attitude according to the first positioning auxiliary information, to fly along the target course; in a case of determining that a ground station switching condition of the second ground station is satisfied, obtaining the second positioning auxiliary information sent by the second ground station; and adjusting the flight attitude according to the second positioning auxiliary information, to fly along the target course to reach the second location point.

Abstract: A method of detecting flow instability includes insonating an area of interest with ultrasound wave pulses, acquiring radio frequency (RF) data from echo pulses of the ultrasound wave pulses, processing the RF data, and deriving a Doppler band-width from the processed RF data by AR modeling. Also described herein is a device for detecting flow instability. The device includes an emitter configured to insonate ultrasound wave pulses on an area of interest, a receiver configured to acquiring radio frequency (RF) data from echo pulses of the ultrasound wave pulses, and a processor configured to process the RF data, and derive a Doppler band-width from the processed RF data by AR modeling.

Abstract: Exemplary semiconductor processing methods may include flowing deposition gases that may include a nitrogen-containing precursor, a silicon-containing precursor, and a carrier gas, into a substrate processing region of a substrate processing chamber. The flow rate ratio of the nitrogen-containing precursor to the silicon-containing precursor may be greater than or about 1:1. The methods may further include generating a deposition plasma from the deposition gases to form a silicon-and-nitrogen containing layer on a substrate in the substrate processing chamber. The silicon-and-nitrogen-containing layer may be treated with a treatment plasma, where the treatment plasma is formed from the carrier gas without the silicon-containing precursor. The flow rate of the carrier gas in the treatment plasma may be greater than a flow rate of the carrier gas in the deposition plasma.