Abstract: Metal stacks and methods of depositing a metal stack on a semiconductor substrate are disclosed. The metal stack is formed by depositing a tungsten (W) layer on the semiconductor substrate and depositing a molybdenum (Mo) layer on the tungsten (W) layer. In one method, a tungsten (W) capping layer is deposited on the molybdenum (Mo) layer, followed by formation of a nitride capping layer on the tungsten (W) capping layer). In a second method, a nitride capping layer is formed on the molybdenum (Mo) layer using an ammonia free process. Both processes result in the formation of a metal stack having low resistivity.

Abstract: Exemplary methods of forming a silicon-containing material may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber and include one or more features. The methods may include generating plasma effluents of the silicon-containing precursor in the processing region. The methods may include depositing a silicon-containing material on a vertically extending portion and a horizontally extending portion of the feature. Methods include soaking the deposited silicon-containing material with a second silicon-containing material.

Abstract: Exemplary semiconductor structures may include a stack of layers overlying a substrate. The stack of layers may include a first portion of layers, a second portion of layers overlying the first portion of layers, and a third portion of layers overlying the second portion of layers. The first portion of layers, the second portion of layers, and the third portion of layers may include alternating layers of a silicon oxide material and a silicon nitride material. One or more apertures may be formed through the stack of layers. A lateral notch in each individual layer of silicon nitride material at an interface of the individual layer of silicon nitride material and an overlying layer of silicon oxide material may extend a distance less than or about 100% of a distance corresponding to a thickness of the individual layer of silicon nitride material.

Abstract: This application pertains to the field of communication technologies and discloses a service processing method. The method includes: receiving, by a first network device, a service processing request of a second network device for a target privacy protection service; obtaining a target privacy processing model obtained through joint training with the second network device; and performing, by using the target privacy processing model, privacy processing on network data related to the target privacy protection service, and then transmitting the network data to the second network device.

Abstract: This application discloses an information transmission method and apparatus, a communication device, and a readable storage medium, which relate to the technical field of communications. An information transmission method of embodiments of this application includes: sending, by a first communication device, a first message to a second communication device, where the first message includes an information elements container, and the information elements container includes identification information of at least one first information element and content of the at least one first information element.

Abstract: This application discloses a privacy protection information processing method and apparatus, and a communication device, and pertains to the field of communication technologies. The privacy protection information processing method of embodiments of this application includes: sending, by a first communication device, a privacy protection service request message to a second communication device, where the privacy protection service request message includes an identifier of the first communication device and privacy protection service description information; and receiving, by the first communication device, privacy-protected service data returned by the second communication device.

Abstract: Provided are a data processing method and apparatus, a core network node, an electronic device, and a storage medium. The data processing method includes following operations. A first core network node receives a task request sent by an application function AF. The first core network node performs a process of sending target data to the AF. The target data is data obtained through a privacy protection.

Abstract: An information transmission method and a network element. The information transmission method of embodiments of this application includes: A first core network element receives a location service request from a second core network element. The location service request is used to request location information of at least one user equipment, the location service request includes location granularity indication information, and the location granularity indication information is used to indicate at least one of location granularities of multiple gradients. The first core network element determines location accuracy and a quality of service QoS class based on the location service request. The first core network element sends a user equipment location service request to a first network element. The first core network element receives the user equipment location information sent by the first network element.

Abstract: A user equipment information prediction method and apparatus and a network element. The method in embodiments of this application includes: obtaining, by a first network element, user equipment location data of a first time period using a location service LCS architecture; and inputting, by the first network element, the user equipment location data of the first time period into a traffic model or a supervised learning model, and obtaining user equipment prediction information of a second time period output by the traffic model or the supervised learning model.

Abstract: Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.

Abstract: A resource control method and apparatus, a terminal, and a network side device are provided. The resource control metho comprises: a network side device determines failure of reactivation of a first PDU session initiated by a terminal due to NSAC of a first slice; and the network side device transmits a first message to the terminal, wherein the first message carries at least one of the following: first indication information indicating that a cause of the failure of the reactivation of the first PDU session fails is failure of the NSAC of the first slice fails; and second indication information indicating a first timer bound to the first slice and indicating that the terminal is allowed to reinitiate reactivation of the first PDU session associated with the first slice after expiry of the first timer.

Abstract: Exemplary processing methods may include i) providing one or more deposition precursors to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may include one or more features defining one or more sidewalls. The methods may include ii) forming plasma effluents of the one or more deposition precursors. The methods may include iii) contacting the substrate with the plasma effluents of the one or more deposition precursors. The contacting may deposit a doped silicon-and-oxygen-containing material on the substrate. A first portion of the doped silicon-and-oxygen-containing material deposited on the one or more sidewalls of the one or more features may be characterized by a poorer film quality than a second portion of the doped silicon-and-oxygen-containing material deposited on a lower portion of the one or more features.

Abstract: The present disclosure relates to the technical field of decision-making of unmanned surface vehicles, and provides a brain-like memory-based environment perception and decision-making method and system for an unmanned surface vehicle. The method includes: obtaining an image of an environment in front of an unmanned surface vehicle; and inputting the image of the environment into an environment perception and decision-making model of the unmanned surface vehicle, and outputting an action instruction, where the environment perception and decision-making model of the unmanned surface vehicle includes an image feature extractor, a Bidirectional Encoder Representations from Transformers (BERT) model, a fully connected layer, a short-term scene memory module, and a long-term memory module that are connected in turn; the BERT model extracts an image feature representation containing a text feature from an image feature. The present disclosure improves accuracy of decision-making of an action.

Abstract: Described herein is an embossable non-solvent polyurethane sheet, which is formed from a non-solvent polyurethane system including a polyol component (a) and an isocyanate component (b), where the polyol component (a) includes (a-1) at least one polyol having a functionality in a range of from 1.5 to 2.5; and (a-2) optionally at least one polyol having a functionality in a range of 2.7 to 3.5, wherein an amount of the at least one polyol (a-2) is ?6 wt %, based on a total weight of the polyol component (a), and wherein the polyol component (a) has an average functionality of from 1.5 to 2.1. Also described herein are a laminate including the sheet and a synthetic leather including the sheet. Also described herein are a method of using the sheet, a method of using the laminate, and a method of using the synthetic leather.

Abstract: Exemplary methods of semiconductor processing may include forming a layer of silicon nitride on a semiconductor substrate. The layer of silicon nitride may be characterized by a first roughness. The methods may include performing a post-deposition treatment on the layer of silicon nitride. The methods may include reducing a roughness of the layer of silicon nitride such that the layer of silicon nitride may be characterized by a second roughness less than the first roughness.

Abstract: The present invention discloses an online neuron spike sorting method based on neuromorphic computing, which converts neuron spike signals collected from the cerebral cortex into spike signals through field coding, classifies different waveforms and corresponding time stamps by means of spiking neural networks, and realizes online neuron spike sorting; at the same time, the online update method of spiking neural network is used to adapt to the online changes of neuronal spike waveform and improve the accuracy of long-term online neuronal spike sorting. This method has fast computational speed, which can improve the speed of spike sorting process, maintain high consistency in classification on different datasets, and facilitate the deployment of implanted chips.

Abstract: Capacitor devices containing silicon boron nitride with high boron concentration are provided. In one or more examples, a capacitor device is provided and contains a stopper layer containing silicon boron nitride and disposed on a substrate, a dielectric layer disposed on the stopper layer, vias formed within the dielectric layer and the stopper layer, metal contacts disposed on bottoms of the vias, a nitride barrier layer containing a metal nitride material and disposed on walls of the vias and disposed on the metal contacts, and an oxide layer disposed within the vias on the nitride barrier layer, wherein the oxide layer contains one or more holes or voids formed therein. The silicon boron nitride contains about 18 atomic percent (at %) to about 50 at % of boron.

Abstract: The present invention discloses an online neuron spike sorting method based on neuromorphic computing, which converts neuron spike signals collected from the cerebral cortex into spike signals through field coding, classifies different waveforms and corresponding time stamps by means of spiking neural networks, and realizes online neuron spike sorting; at the same time, the online update method of spiking neural network is used to adapt to the online changes of neuronal spike waveform and improve the accuracy of long-term online neuronal spike sorting. This method has fast computational speed, which can improve the speed of spike sorting process, maintain high consistency in classification on different datasets, and facilitate the deployment of implanted chips.

Abstract: Exemplary methods of semiconductor processing may include providing a fluorine-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may include a boron-containing material overlying a carbon-containing material. The methods may include generating plasma effluents of the fluorine-containing precursor. The methods may include contacting the substrate with the plasma effluents of the fluorine-containing precursor. The methods may include removing the boron-containing material from the substrate.

Abstract: A method for manufacturing a hot-dip galvanized steel sheet having a high Si content and good plating adhesion. The method for manufacturing a hot-dip galvanized steel sheet includes the following: hot-rolling a steel raw material having a Si content of 1.0 mass % or more and coiling a steel sheet at 500° C. to 700° C.; subjecting a surface of the steel sheet after the coiling to an oxidation treatment at a heating temperature of a steel sheet temperature of 750° C. or lower, and subsequently subjecting the surface to a reduction treatment; and subjecting the steel sheet after the reduction treatment to a hot-dip galvanizing treatment to form a Zn-plated layer on a surface of the steel sheet.