Abstract: Exemplary deposition methods may include introducing a precursor into a processing region of a semiconductor processing chamber via a faceplate of the semiconductor processing chamber. The methods may include flowing an oxygen-containing precursor into the processing region from beneath a pedestal of the semiconductor processing chamber. The pedestal may support a substrate. The substrate may define a trench in a surface of the substrate. The methods may include forming a first plasma of the precursor in the processing region of the semiconductor processing chamber. The methods may include depositing a first oxide film within the trench. The methods may include forming a second plasma in the processing region. The methods may include etching the first oxide film, while flowing the oxygen-containing precursor. The methods may include re-forming the first plasma in the processing region. The methods may also include depositing a second oxide film over the etched oxide film.

Abstract: A method for dynamic encryption and signing includes: obtaining, by a terminal during session connection, a predetermined first key index and a randomly-generated first signature index; signing session request data with a first signature corresponding to the first signature index; encrypting the session request data with a first key corresponding to the first key index; sending the encrypted session request data and the first signature index to the server; and receiving, from the server, session response data signed with a second signature corresponding to a second signature index and encrypted with a second key corresponding to a second key index, after decryption and signature verification by the server over the session request data succeed. The second signature index and the second key index are randomly selected by the server and saved in a login session object accessible by both the server and the terminal.

Abstract: The present invention provides a multi-layered interlaced membrane comprising at least one substrate layer including a plurality of first polymer-based microfibers; at least one nanofibrous layer including a plurality of second polymer-based nanofibers where each of the nanofibers has one or more nano-branches; at least one interlaced layer including a plurality of third polymer-based submicron fibers where each of the submicron fibers has one or more nano-branches and a plurality of fourth polymer-based nanofibers where each of the nanofibers has one or more nano-branches, wherein the third polymer-based submicron fibers are interlaced with the fourth polymer-based nanofibers; at least one submicron fibrous layer including a plurality of fifth polymer-based submicron fibers where each of the submicron fibers has one or more nano-branches.

Abstract: Exemplary semiconductor processing methods may include flowing deposition gases that may include a nitrogen-containing precursor, a silicon-containing precursor, and a carrier gas, into a substrate processing region of a substrate processing chamber. The flow rate ratio of the nitrogen-containing precursor to the silicon-containing precursor may be greater than or about 1:1. The methods may further include generating a deposition plasma from the deposition gases to form a silicon-and-nitrogen containing layer on a substrate in the substrate processing chamber. The silicon-and-nitrogen-containing layer may be treated with a treatment plasma, where the treatment plasma is formed from the carrier gas without the silicon-containing precursor. The flow rate of the carrier gas in the treatment plasma may be greater than a flow rate of the carrier gas in the deposition plasma.

Abstract: Exemplary deposition methods may include electrostatically chucking a semiconductor substrate at a first voltage within a processing region of a semiconductor processing chamber. The methods may include performing a deposition process. The deposition process may include forming a plasma within the processing region of the semiconductor processing chamber. The methods may include halting formation of the plasma within the semiconductor processing chamber. The methods may include, simultaneously with the halting, increasing the first voltage of electrostatic chucking to a second voltage. The methods may include purging the processing region of the semiconductor processing chamber.

Abstract: Methods for forming a SiBN film comprising depositing a film on a feature on a substrate. The method comprises in a first cycle, depositing a SiB layer on a substrate in a chamber using a chemical vapor deposition process, the substrate having at least one feature thereon, the at least one feature comprising an upper surface, a bottom surface and sidewalls, the SiB layer formed on the upper surface, the bottom surface and the sidewalls. In a second cycle, the SiB layer is treated with a plasma comprising a nitrogen-containing gas to form a conformal SiBN film.

Abstract: Exemplary processing methods may include forming a first deposition plasma of a silicon-and-nitrogen-containing precursor. The methods may include depositing a first portion of a silicon nitride material on a semiconductor substrate with the first deposition plasma. A first treatment plasma of a helium-and-nitrogen-containing precursor may be formed to treat the first portion of the silicon nitride material with the first treatment plasma. A second deposition plasma may deposit a second portion of a silicon nitride material, and a second treatment plasma may treat the second portion of the silicon nitride material. A flow rate ratio of helium-to-nitrogen in the first treatment plasma may be lower than a He/N2 flow rate ratio in the second treatment plasma. A first power level from a plasma power source that forms the first treatment plasma may be lower than a second power level that forms the second treatment plasma.

Abstract: Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor, a nitrogen-containing precursor, and diatomic hydrogen into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may also include forming a plasma of the silicon-containing precursor, the nitrogen-containing precursor, and the diatomic hydrogen. The plasma may be formed at a frequency above 15 MHz. The methods may also include depositing a silicon nitride material on the substrate.

Abstract: Exemplary processing methods may include forming a first deposition plasma of a silicon-and-nitrogen-containing precursor. The methods may include depositing a first portion of a silicon nitride material on a semiconductor substrate with the first deposition plasma. A first treatment plasma of a helium-and-nitrogen-containing precursor may be formed to treat the first portion of the silicon nitride material with the first treatment plasma. A second deposition plasma may deposit a second portion of a silicon nitride material, and a second treatment plasma may treat the second portion of the silicon nitride material. A flow rate ratio of helium-to-nitrogen in the first treatment plasma may be lower than a He/N2 flow rate ratio in the second treatment plasma. A first power level from a plasma power source that forms the first treatment plasma may be lower than a second power level that forms the second treatment plasma.

Abstract: Embodiments disclosed herein include methods of forming high quality silicon nitride films. In an embodiment, a method of depositing a film on a substrate may comprise forming a silicon nitride film over a surface of the substrate in a first processing volume with a deposition process, and treating the silicon nitride film in a second processing volume, wherein treating the silicon nitride film comprises exposing the film to a plasma induced by a modular high-frequency plasma source. In an embodiment, a sheath potential of the plasma is less than 100 V, and a power density of the high-frequency plasma source is approximately 5 W/cm2 or greater, approximately 10 W/cm2 or greater, or approximately 20 W/cm2 or greater.

Abstract: The invention provides a calibration method and a calibration device of a system for measuring corneal parameters, and particularly the invention provides a system calibration method and device for geometric distortion, caused by camera shooting angle when measuring cornea-related parameters, of a digital slit lamp and a system of similar principles based on machine vision.

Abstract: The present invention discloses an optical coherence tomography image processing method, comprising the following steps: step 1: collecting anterior segment tomography images by means of an optical coherence tomography technology, to obtain an anterior segment black-and-white image; step 2: performing pseudo-coloring processing and color space conversion on the anterior segment black-and-white image and performing superposed threshold binarization, to differentiate cornea, iris and crystalline lens potential areas, and then obtaining cornea, iris and crystalline lens areas separately by means of blob shape analyses; step 3: performing, by means of tectonics operations, spot filling and collapse processing on the cornea, iris and crystalline lens areas obtained in step 2; and step 4: performing boundary tracing on the image by means of a level set algorithm, to precisely trace surface boundaries of all parts of an anterior segment and find the anterior segment.

Abstract: Apparatus and methods of use are provided for complex flow imaging and analysis that is non-invasive, accurate, and time-resolved. It is particularly useful in imaging of vascular flow with spatiotemporal fluctuations. This apparatus is an ultrasound-based framework called vector projectile imaging (VPI) that can dynamically render complex flow patterns over an imaging view at millisecond time resolution. The VPI apparatus and methods comprise: (i) high-frame-rate broad-view data acquisition (based on steered plane wave firings); (ii) flow vector estimation derived from multi-angle Doppler analysis (coupled with data regularization and least-squares fitting); and (iii) dynamic visualization of color-encoded vector projectiles (with flow speckles displayed as adjunct).

Abstract: A process development visualization tool generates a first visualization of a parameter associated with a manufacturing process, and provides a GUI control element associated with a process variable of the manufacturing process, wherein the GUI control element has a first setting associated with a first value for the process variable. The process development tool receives a user input to adjust the GUI control element from the first setting to a second setting, determines a second value for the process variable based on the second setting, and determines a second set of values for the parameter that are associated with the second value for the process variable. The process development tool then generates a second visualization of the parameter, wherein the second visualization represents the second set of values for the parameter that are associated with the second value for the process variable.

Abstract: Exemplary semiconductor processing chambers may include a gasbox. The chambers may include a substrate support. The chambers may include a blocker plate positioned between the gasbox and the substrate support. The blocker plate may define a plurality of apertures through the plate. The chambers may include a faceplate positioned between the blocker plate and the substrate support. The faceplate may be characterized by a first surface facing the blocker plate and a second surface opposite the first surface. The faceplate may be characterized by a central axis. The faceplate may define a plurality of apertures through the faceplate distributed in a number of rings. Each ring of apertures may include a scaled increase in aperture number from a ring radially inward. A radially outermost ring of apertures may be characterized by a number of apertures reduced from the scaled increase in aperture number.

Abstract: Embodiments of the invention contemplate a shadow ring that provides increased or decreased and more uniform deposition on the edge of a wafer. By removing material from the top and/or bottom surfaces of the shadow ring, increased edge deposition and bevel coverage can be realized. In one embodiment, the material on the bottom surface is reduced by providing a recessed slot on the bottom surface. By increasing the amount of material of the shadow ring, the edge deposition and bevel coverage is reduced. Another approach to adjusting the deposition at the edge of the wafer includes increasing or decreasing the inner diameter of the shadow ring. The material forming the shadow ring may also be varied to change the amount of deposition at the edge of the wafer.

Abstract: The invention provides a method for establishing a separable regeneration system for verifying regeneration effect between two antioxidants, which belongs to the field of regeneration effect of antioxidants. According to different solubilities of two antioxidants, lipid-soluble antioxidant is first combined into PE film, and water-soluble antioxidant is dissolved into deionized water and a separable regeneration system where antioxidants can contact with other but not dissolve in each other is formed. This method compares the differences of change of antioxidant capacity in aqueous phase with and without lipid-soluble antioxidant so that to judge whether the added lipid-soluble antioxidant has regeneration effect on aqueous-soluble antioxidant. The present invention effectively verifies the regeneration effect between different antioxidants, and has advantages of simple operation, less interference factors, intuitive and high efficiency.

Abstract: Disclosed is a method for non-destructive detection of egg freshness based on Raman spectroscopy technology, which belongs to the field of food detection. Partial least squares regression models are built using Raman spectroscopic data and measured values of physicochemical indexes for egg freshness, which can be used to predict egg freshness based on Raman spectrum of egg shell surface. The Raman spectroscopic data are collected in the waveband of 100-3000 cm?1. The physicochemical indexes used in the invention include the Haugh unit, the albumen pH, the air chamber diameter and the air chamber height. By using the partial least squares model, values of physicochemical index for egg freshness can be obtained from Raman spectra collected on egg shell surfaces, thus achieving the goal of non-destructive detection of egg freshness.

Abstract: Disclosed embodiments include methods for control channel design in many-antenna multi-user (MU) multiple-input multiple-output (MIMO) wireless systems. A beacon comprising an identifier of a many-antenna base station is encoded into a base sequence. A plurality of synchronization sequences is generated based on the encoded base sequence and a set of orthogonal beam sequences. The many-antenna base-station transmits, using a plurality of antennas, the plurality of synchronization sequences in a plurality of beam directions associated with the set of orthogonal beam sequences for synchronization and associated with users without knowledge of channel state information (CSI).

Abstract: A method for processing pupil tracking images, comprising the steps of: 1) acquiring eye images multiple times; 2) processing each acquired eye image, and determining whether a pupil can be positioned in the acquired image; and 3) determining that pupil tracking is completed when the pupil can be positioned in consecutive n pieces of eye images. Image processing efficiency is improved by searching a potential bright spot area and carrying out Blob analysis smearing images caused by pupil movement can be eliminated, the pupil edge is accurately positioned by adopting a line drawing method in collaboration with a support vector machine when determining the pupil edge, and finally a weighted least square method is adopted to fit a circle/ellipse (pupil). Therefore, real-time tracking and analysis of the pupil under a complex background are realized, and reliable data are provided for subsequent steps to obtain the refractive parameters of the eye.