Abstract: The present disclosure generally relates to novel multiple target inhibitor of tyrosine kinases (TKs) which can suppress angiogenesis, metastasis, oncogenesis, and/or immune regulation activities by inhibiting TKs and have very potent immunomodulatory activity. The present disclosure also relates to a method of using the tyrosine kinase inhibitors, alone or in combination with HDAC inhibitor, for the treatment of cancers, in particular in cancer immunotherapy, by regulating the tumor microenvironment, including reducing tumor hypoxia, reducing lactic acid accumulation, activating CTL, inhibiting the number and activity of immunosuppressive cells, finally obtaining superior anti-cancer benefits and/or producing lasting immune memory.

Abstract: A semiconductor device includes a substrate having a plurality of chip regions. In some embodiments, the semiconductor device further includes a plurality of scribe lines interposing the plurality of chip regions. In some examples, the semiconductor device further includes a first plurality of alignment mark regions distributed within the plurality of scribe lines. In some embodiments, the semiconductor device further includes a second plurality of alignment mark regions distributed within each of the plurality of chip regions.

Abstract: The present disclosure generally relates to compounds class I HDAC inhibitors, their production and applications. The compounds possess epigenetic immunomodulatory activities in the tumor microenvironment (TME) and thus inhibit growth of tumor cells.

Abstract: A method of fabricating a semiconductor device includes providing a first fin extending from a substrate. In some embodiments, the method further includes forming a first gate stack over the first fin. In various examples, the method further includes forming a first doped layer along a surface of the first fin including beneath the first gate stack. In some cases, a first dopant species of the first doped layer is of a same polarity as a second dopant species of a source/drain feature of the semiconductor device.

Abstract: A video synchronous playback system and a method and a terminal device for video synchronous playback are provided. The method includes: outputting a video by a first communication interface, wherein the video has a first playback configuration; in response to at least one of receiving a control command generated by a first playback configuration control area being operated and an expiration of a counter, outputting a first playback signal corresponding to the first playback configuration through the first communication interface by a first processor; and receiving the first playback signal and outputting the video by a second terminal device.

Abstract: According to various embodiments, an electronic device may include an operation of receiving, by a first eBPF module, untracked new traffic from a client; an operation of adding, by the first eBPF module, an entry corresponding to the new traffic to a Conn Track map in response to the operation of receiving the new traffic; an operation of reporting, by the first eBPF module, the addition of the entry to a first synchronization module; and an operation of monitoring, by the first synchronization module, a first connection corresponding to the new traffic. Other embodiments are also available.

Abstract: A semiconductor device includes a first gate stack structure over a substrate, a source/drain epitaxial layer, a lightly doped region, and a silicide region. The source/drain epitaxial layer is disposed in the substrate and adjacent to the first gate stack structure. The lightly doped region is located in the substrate to be electrically connected to the source/drain epitaxial layer. The lightly doped region includes a first portion protrudes from a sidewall of the source/drain epitaxial layer. The silicide region is in contact with a top surface and sidewalls of a top portion of the source/drain epitaxial layer and a top surface of the first portion of the lightly doped region. The top portion of the source/drain epitaxial layer is higher than the top surface of the first portion of the lightly doped region.

Abstract: A semiconductor device includes a plurality of gate electrodes over a substrate, and a source/drain epitaxial layer. The source/drain epitaxial layer is disposed in the substrate and between two adjacent gate electrodes, wherein a bottom surface of the source/drain epitaxial layer is buried in the substrate to a depth less than or equal to two-thirds of a spacing between the two adjacent gate electrodes.

Abstract: A projection device includes a casing, a projection lens, a light valve module, a light source module, a first heat dissipation module, a second heat dissipation module, a fan, and a guiding member. The first heat dissipation module is disposed corresponding to a first air inlet of a first side cover and connected to the light valve module, and the second heat dissipation module is disposed corresponding to a second air inlet of a second side cover and connected to the light source module. An airflow in an accommodating space of the casing is guided to the guiding member by the fan, and is transferred from the guiding member to an air outlet to flow out of the casing. A direction of an image beam of the projection lens is different from an airflow direction flowing out from the air outlet of a third side cover.

Abstract: A projection device includes a casing, a light source module, a light valve module, a projection lens, a heat dissipation module, and a fan disposed in the casing. The casing has at least one air inlet, a first air outlet, and a second air outlet. The heat dissipation module is coupled to the light source module and the light valve module and configured to cool the light source module and the light valve module. The fan has a first air exhaust and a second air exhaust. The first air exhaust and the second air exhaust are respectively disposed at positions adjacent to the first air outlet and the second air outlet of the casing.

Abstract: Provided is a semiconductor device including a substrate having a lower portion and an upper portion on the lower portion; an isolation region disposed on the lower portion of the substrate and surrounding the upper portion of the substrate in a closed path; a gate structure disposed on and across the upper portion of the substrate; source and/or drain (S/D) regions disposed in the upper portion of the substrate at opposite sides of the gate structure; and a channel region disposed below the gate structure and abutting between the S/D regions, wherein the channel region and the S/D regions have different conductivity types, and the channel region and the substrate have the same conductivity type.

Abstract: A projection device including a casing, a light source module, an optical engine module and a projection lens is provided. A front cover, a rear cover, a first side cover, a second side cover, an upper cover and a lower cover of the casing surround an accommodating space. The light source module includes a first and a second light sources, and a first and a second light source heat dissipation modules. The lower cover has a first, a second and a third air inlets. The first and the second side covers respectively have a first and a second air outlets. The first and the second light source heat dissipation modules are correspondingly disposed above the first air inlet and correspond to the first air outlet. The second and the third air inlets are respectively disposed below two sides of the projection lens and adjacent to the front cover.

Abstract: Provided is a projection device, including a casing, a light source module, an optical engine module, a projection lens, and a fan. The casing includes a right cover plate and a baffle opposite to each other, and a lower cover plate adjacent to the right cover plate. The baffle divides the casing into first and second areas. The right and lower cover plates respectively have first and second air outlets adjacent to each other and located in the second area. The light source module, the optical engine module, located on a light transmission path of the light source module, the projection lens, connected to the optical engine module, and the fan, adjacent to the baffle, are disposed in the first area of the casing. The projection device is placed in a first or second state, and hot airflow therein flows out from the first or second air outlet.

Abstract: A light source module applicable to a projection device includes a heat dissipation assembly, a first light source, and a second light source. The heat dissipation assembly includes first and second heat dissipation components. The first heat dissipation component includes a first base and a first fin set. The first fin set has a first ventilation surface. The second heat dissipation component includes a second base and a second fin set. The second base has a first surface, a second surface and a ventilation opening. The first surface is opposite to the second surface. The second fin set is arranged on the first surface. The second surface faces the first ventilation surface. The ventilation opening penetrates the first and second surfaces and is aligned with the first ventilation surface. The first light source is arranged on the first base. The second light source is arranged on the second base.

Abstract: The present invention relates to a combination of a histone deacetylase (HDAC) inhibitor, chidamide in an acidic salt form, and a nonsteroidal anti-inflammatory drugs (NSAIDs), celecoxib in a basic salt form. The present invention also relates to methods which significantly regulate tumor microenvironment and therefore dramatically improve anti-cancer activity.

Abstract: A method of manufacturing a semiconductor structure, comprising providing a substrate; forming a fin structure over the substrate; depositing an insulation material over the fin structure; performing a plurality of ion implantation cycles in-situ with implantation energy increased or decreased stepwise; and removing at least a portion of the insulation material to expose a portion of the fin structure.

Abstract: The present disclosure generally relates to compounds class I HDAC inhibitors, their production and applications. The compounds possess epigenetic immunomodulatory activities in the tumor microenvironment (TME) and thus inhibit growth of tumor cells.

Abstract: A method is provided for adding a sensor monitoring feature of a newly-added sensor to a system monitoring feature provided by a baseboard management controller (BMC). The BMC stores a BMC firmware that contains a main program, a sensor library and a sensor data record. The BMC updates the sensor library to a target sensor library that includes identification information of the additional sensor, and functions used to execute the sensor monitoring feature of the additional sensor. By executing the main program, the BMC loads the target sensor library, and adds the identification information of the additional sensor to the sensor data record.

Abstract: The present disclosure generally relates to compounds class I HDAC inhibitors, their production and applications. The compounds possess epigenetic immunomodulatory activities in the tumor microenvironment (TME) and thus inhibit growth of tumor cells.