Abstract: The present disclosure relates to a method of forming a back-end-of-the-line metallization layer. The method is performed by forming a plurality of freestanding metal layer structures (i.e., metal layer structures not surrounded by a dielectric material) on a semiconductor substrate within an area defined by a patterned photoresist layer. A diffusion barrier layer is deposited onto the metal layer structure in a manner such that the diffusion barrier layer conforms to the top and sides of the metal layer structure. A dielectric material is formed on the surface of the substrate to fill areas between metal layer structures. The substrate is planarized to remove excess metal and dielectric material and to expose the top of the metal layer structure.

Abstract: Methods of making an integrated circuit are disclosed. An embodiment method includes etching a trench in a silicon substrate, depositing a first layer of isolation material in the trench, the first layer of isolation material projecting above surface of the silicon substrate, capping the first layer of isolation material by depositing a second layer of isolation material, the second layer of isolation material extending along at least a portion of sidewalls of the first layer of isolation material, epitaxially-growing a silicon layer upon the silicon substrate, the silicon layer horizontally adjacent to the second layer of isolation material, and forming a gate structure on the silicon layer, the gate structure defining a channel.

Abstract: A method for preparing sulfobutyl ether-?-cyclodextrin. ?-cyclodextrin and 1,4-sulfobutyrolactone are used as raw materials, and a proper amount of an organic solvent is introduced into an alkaline aqueous solution, so that the solubility of the 1,4-sulfobutyrolactone is increased, and the synthesis yield of the sulfobutyl ether-?-cyclodextrin is improved. Operations including ultrasonic dialysis, active carbon decoloration, freeze-drying and so on are performed on the obtained product solution, so as to obtain a powder product of the sulfobutyl ether-beta-cyclodextrin.

Abstract: A synthesis method for L-cyclic alkyl amino acid and a pharmaceutical composition having the said amino acid are provide in the present disclosure provides. The synthesis method comprises: step A.) preparing a cyclic alkyl keto acid or a cyclic alkyl keto acid salt having Structural Formula (I) or Structural Formula (II), and step B.) mixing the cyclic alkyl keto acid or the cyclic alkyl keto acid salt with ammonium formate, a leucine dehydrogenase, a formate dehydrogenase and a coenzyme NAD+, and carrying out a reductive amination reaction to generate the L-cyclic alkyl amino acid, wherein the Structural Formula (I) is where n1?1, m1?0 and the M1 is H or a monovalent cation; the Structural Formula (II) is where n2?0, m2?0, the M2 is H or a monovalent cation, an amino acid sequence of the leucine dehydrogenase is SEQ ID No.1.

Abstract: A device includes a semiconductor substrate having a front side and a backside, a photo-sensitive device disposed on the front side of the semiconductor substrate, and a first and a second grid line parallel to each other. The first and the second grid lines are on the backside of, and overlying, the semiconductor substrate. The device further includes an adhesion layer, a metal oxide layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal oxide layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.

Abstract: The present invention relates to the field of natural pharmaceutical chemistry, and in particular, to a resveratrol dimer (7R,8R)-trans-?-viniferin (I), a preparation process therefor and a purpose thereof in lowering a blood sugar level. According to the present invention, an R type of resveratrol dimer is separated from the resveratrol dimer by using high-speed countercurrent chromatography. Pharmacodynamic tests proved that the R type of resveratrol dimer has a better effect in lowering a blood sugar level than a racemate.

Abstract: A phase detecting device and a clock data recovery circuit are provided. The phase detecting device includes a decision feedback equalizer having first and second sample-hold sub-circuits, an edge detector having a third sample-hold sub-circuit, a first XOR gate, and a second XOR gate. The first sample-hold sub-circuit, the second sample-hold sub-circuit and the third sample-hold sub-circuit obtain first sample data, second sample data and transition data, respectively. The first XOR gate executes an XOR operation for the first sample data and the transition data to generate first clock phase shift information. The second XOR gate executes the XOR operation for the second sample data and the transition data to generate second clock phase shift information. Therefore, high-frequency noise disturbance generated from conventional clock data recovery circuit and decision feedback equalizer can be avoided.

Abstract: Disclosed is a method for synthesizing sapropterin dihydrochloride. The present disclosure reduces a synthesis route of the sapropterin dihydrochloride, and resolves a racemate intermediate or an intermediate having a low antimer isomerism value by using a chiral resolving reagent, thereby obtaining an intermediate having a high antimer isomerism value. Raw materials are cheap and readily available, and the cost is significantly reduced, hence providing an effective scheme for mass industrial production of the sapropterin dihydrochloride.

Abstract: Disclosed is a method for synthesizing sapropterin dihydrochloride. The present disclosure reduces a synthesis route of the sapropterin dihydrochloride, introduces a chiral center in an asymmetric synthesis manner, in which a tetrahydrofuran solution containing a samarium catalyst is adopted as a catalyst, and obtains a target compound having a high antimer isomerism value by means of selective catalysis. The yield is improved, raw materials are cheap and readily available, and the cost is significantly reduced, hence providing an effective scheme for mass industrial production of the sapropterin dihydrochloride.

Abstract: A method includes performing a first epitaxy to grow a first epitaxy layer of a first conductivity type, and performing a second epitaxy to grow a second epitaxy layer of a second conductivity type opposite the first conductivity type over the first epitaxy layer. The first and the second epitaxy layers form a diode. The method further includes forming a gate dielectric over the first epitaxy layer, forming a gate electrode over the gate dielectric, and implanting a top portion of the first epitaxy layer and the second epitaxy layer to form a source/drain region adjacent to the gate dielectric.

Abstract: A synthesis method for an L-heterocyclic amino acid and a pharmaceutical composition having the said amino acid are provided in the present disclosure. The synthesis method comprises: step A: preparing a heterocyclic keto acid, wherein the heterocycle in the heterocyclic keto acid is selected from any one of a five-membered heterocycle, a six-membered heterocycle, a seven-membered heterocycle, an alkyl-substituted five-membered heterocycle, an alkyl-substituted six-membered heterocycle, and an alkyl-substituted seven-membered heterocycle, and the keto acid group in the heterocyclic keto acid has a structural formula of and is located on any one of the carbon positions of the heterocycle, and step B: mixing the heterocyclic keto acid with ammonium formate, a phenylalanine dehydrogenase, a formate dehydrogenase and a coenzyme NAD+, and carrying out a reductive amination reaction to generate L-heterocyclic amino acid, wherein the amino acid sequence of the phenylalanine dehydrogenase is SEQ ID No. 1.

Abstract: A device includes a semiconductor substrate having a front side and a backside, a photo-sensitive device disposed on the front side of the semiconductor substrate, and a first and a second grid line parallel to each other. The first and the second grid lines are on the backside of, and overlying, the semiconductor substrate. The device further includes an adhesion layer, a metal oxide layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal oxide layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.

Abstract: System and method for processing a semiconductor device surface to reduce dark current and white pixel anomalies. An embodiment comprises a method applied to a semiconductor or photodiode device surface adjacent to a photosensitive region, and opposite a side having circuit structures for the device. A doped layer may optionally be created at a depth of less than about 10 nanometers below the surface of the substrate and may be doped with a boron concentration between about 1E13 and 1E16. An oxide may be created on the substrate using a temperature sufficient to reduce the surface roughness below a predetermined roughness threshold, and optionally at a temperature between about 300° C. and 500° C. and a thickness between about 1 nanometer and about 10 nanometers. A dielectric may then be created on the oxide, the dielectric having a refractive index greater than a predetermined refractive threshold, optionally at least about 2.0.

Abstract: A phase detecting device and a clock data recovery circuit are provided. The phase detecting device includes a decision feedback equalizer having first and second sample-hold sub-circuits, an edge detector having a third sample-hold sub-circuit, a first XOR gate, and a second XOR gate. The first sample-hold sub-circuit, the second sample-hold sub-circuit and the third sample-hold sub-circuit obtain first sample data, second sample data and transition data, respectively. The first XOR gate executes an XOR operation for the first sample data and the transition data to generate first clock phase shift information. The second XOR gate executes the XOR operation for the second sample data and the transition data to generate second clock phase shift information. Therefore, high-frequency noise disturbance generated from conventional clock data recovery circuit and decision feedback equalizer can be avoided.

Abstract: A low voltage quadrature phase wideband relaxation oscillator. An ultra-wideband tuning range from Mega to Giga Hz order is also realized by tuning the I/Q coupling factor, zeros and poles. Preferably, a novel synchronous quadrature injection lock is proposed to validate low noise performance.

Abstract: A device includes a semiconductor substrate having a front side and a backside, a photo-sensitive device disposed on the front side of the semiconductor substrate, and a first and a second grid line parallel to each other. The first and the second grid lines are on the backside of, and overlying, the semiconductor substrate. The device further includes an adhesion layer, a metal oxide layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal oxide layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.

Abstract: Embodiments of the present disclosure provide for RGD mimetic ?-AApeptide compounds, ?-AApeptide compounds capable of binding an RGD binding site on integrin ?v?3, linear ?-AApeptide compounds, cyclic ?-AApeptide compounds and multimeric RGD mimetic ?-AApeptide compounds, methods of making each, and methods of using each, and the like. In embodiments, the RGD mimetic ?-AApeptide compounds can be used in imaging, diagnostics, and treatment of angiogenesis related conditions.

Abstract: Embodiments that relate to mechanisms for providing a stable dislocation profile are provided. A semiconductor substrate having a gate stack is provided. An opening is formed adjacent to a side of the gate stack. A first part of an epitaxial growth structure is formed in the opening. A second part of the epitaxial growth structure is formed in the opening. The first part and the second part of the epitaxial growth structure are formed along different directions.

Abstract: The disclosure claims a continuous processing method of 2-Methyltetrahydrofuran (2-MeTHF), including the steps as follows: introducing gasification furfural and hydrogen into a first reaction zone and processing a first catalytic hydrogenation reaction; introducing the gas which is output from the first reaction zone to a second reaction zone to implement a secondary catalytic hydrogenation reaction; and condensing the gas output from the second reaction zone to obtain the 2-MeTHF; wherein, the first reaction zone is filled with a catalyst which is used for aldehyde group reduction, and the second reaction zone is filled with the catalyst for aromatic saturation hydrogenation. By adopting the low-toxicity catalyst which is cheap and easy to get, the high-purity 2-MeTHF can be produced by implementing the gas-phase continuous reaction by the furfural under low pressure or ambient pressure, the traditional process which has high pressure, high investment and high risk can be changed.

Abstract: A device includes a semiconductor substrate having a front side and a backside, a photo-sensitive device disposed on the front side of the semiconductor substrate, and a first and a second grid line parallel to each other. The first and the second grid lines are on the backside of, and overlying, the semiconductor substrate. The device further includes an adhesion layer, a metal oxide layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal oxide layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.