Abstract: Embodiments that relate to mechanisms for providing a stable dislocation profile are provided. A semiconductor substrate having a gate stack is provided. An opening is formed adjacent to a side of the gate stack. A first part of an epitaxial growth structure is formed in the opening. A second part of the epitaxial growth structure is formed in the opening. The first part and the second part of the epitaxial growth structure are formed along different directions.

Abstract: The disclosure claims a continuous processing method of 2-Methyltetrahydrofuran (2-MeTHF), including the steps as follows: introducing gasification furfural and hydrogen into a first reaction zone and processing a first catalytic hydrogenation reaction; introducing the gas which is output from the first reaction zone to a second reaction zone to implement a secondary catalytic hydrogenation reaction; and condensing the gas output from the second reaction zone to obtain the 2-MeTHF; wherein, the first reaction zone is filled with a catalyst which is used for aldehyde group reduction, and the second reaction zone is filled with the catalyst for aromatic saturation hydrogenation. By adopting the low-toxicity catalyst which is cheap and easy to get, the high-purity 2-MeTHF can be produced by implementing the gas-phase continuous reaction by the furfural under low pressure or ambient pressure, the traditional process which has high pressure, high investment and high risk can be changed.

Abstract: A device includes a semiconductor substrate having a front side and a backside, a photo-sensitive device disposed on the front side of the semiconductor substrate, and a first and a second grid line parallel to each other. The first and the second grid lines are on the backside of, and overlying, the semiconductor substrate. The device further includes an adhesion layer, a metal oxide layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal oxide layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.

Abstract: Uni-wheel personal mobility vehicle with self-balancing function is disclosed. This transportation device can be pedaled by a driving force provided by the driver's manpower and/or the in-wheel motor's electric power. The uni-wheel personal mobility vehicle with self-balancing function is equipped with an inertial sensing and control driving module, an in-wheel motor, and a steering mechanism consisting of a transmission pulley set, an idle pulley set, a transmission cable, and a spring set, therefore the personal mobility vehicle can simultaneously maintain its self balance when being propelled by driver's pedaling force or the in-wheel motor's electrical torque; moreover, the driver can also make the personal mobility electric vehicle change its direction by rotating a handlebar similar to steering a bicycle, wherein the rotation of the handlebar would simultaneously pull one side of the transmission cable via the transmission pulley set to steer the vehicle and maintain its lateral balance.

Abstract: Methods of making an integrated circuit are disclosed. An embodiment method includes etching a trench in a silicon substrate, depositing a first layer of isolation material in the trench, the first layer of isolation material projecting above surface of the silicon substrate, capping the first layer of isolation material by depositing a second layer of isolation material, the second layer of isolation material extending along at least a portion of sidewalls of the first layer of isolation material, epitaxially-growing a silicon layer upon the silicon substrate, the silicon layer horizontally adjacent to the second layer of isolation material, and forming a gate structure on the silicon layer, the gate structure defining a channel.

Abstract: A device includes a semiconductor substrate having a front side and a backside, a photo-sensitive device disposed on the front side of the semiconductor substrate, and a first and a second grid line parallel to each other. The first and the second grid lines are on the backside of, and overlying, the semiconductor substrate. The device further includes an adhesion layer, a metal oxide layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal oxide layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.

Abstract: Embodiments that relate to mechanisms for providing a stable dislocation profile are provided. A semiconductor substrate having a gate stack is provided. An opening is formed adjacent to a side of the gate stack. A first part of an epitaxial growth structure is formed in the opening. A second part of the epitaxial growth structure is formed in the opening. The first part and the second part of the epitaxial growth structure are formed along different directions.

Abstract: Disclosed is a method for synthesizing sapropterin dihydrochloride. The present disclosure reduces a synthesis route of the sapropterin dihydrochloride, and resolves a racemate intermediate or an intermediate having a low antimer isomerism value by using a chiral resolving reagent, thereby obtaining an intermediate having a high antimer isomerism value. Raw materials are cheap and readily available, and the cost is significantly reduced, hence providing an effective scheme for mass industrial production of the sapropterin dihydrochloride.

Abstract: Disclosed is a method for synthesizing sapropterin dihydrochloride. The present disclosure reduces a synthesis route of the sapropterin dihydrochloride, introduces a chiral center in an asymmetric synthesis manner, in which a tetrahydrofuran solution containing a samarium catalyst is adopted as a catalyst, and obtains a target compound having a high antimer isomerism value by means of selective catalysis. The yield is improved, raw materials are cheap and readily available, and the cost is significantly reduced, hence providing an effective scheme for mass industrial production of the sapropterin dihydrochloride.

Abstract: Methods of making an integrated circuit are disclosed. An embodiment method includes etching a trench in a silicon substrate, depositing a first layer of isolation material in the trench, the first layer of isolation material projecting above surface of the silicon substrate, capping the first layer of isolation material by depositing a second layer of isolation material, the second layer of isolation material extending along at least a portion of sidewalls of the first layer of isolation material, epitaxially-growing a silicon layer upon the silicon substrate, the silicon layer horizontally adjacent to the second layer of isolation material, and forming a gate structure on the silicon layer, the gate structure defining a channel.

Abstract: A method includes performing a first epitaxy to grow a first epitaxy layer of a first conductivity type, and performing a second epitaxy to grow a second epitaxy layer of a second conductivity type opposite the first conductivity type over the first epitaxy layer. The first and the second epitaxy layers form a diode. The method further includes forming a gate dielectric over the first epitaxy layer, forming a gate electrode over the gate dielectric, and implanting a top portion of the first epitaxy layer and the second epitaxy layer to form a source/drain region adjacent to the gate dielectric.

Abstract: The invention discloses an ozonization continuous reaction device, comprising a raw material inlet, a raw material distributing device, one or plurality of single reaction tubes, a product outlet and an air vent. The first end of the raw material distributing device is communicated with the raw material inlet; the first end of one or plurality of single reaction tubes is communicated with the second end of the raw material distributing device; the product outlet is communicated with the second end of the single reaction tube; ozone is conveyed to the single reaction tube via the air vent.

Abstract: A method includes performing a first epitaxy to grow a first epitaxy layer of a first conductivity type, and performing a second epitaxy to grow a second epitaxy layer of a second conductivity type opposite the first conductivity type over the first epitaxy layer. The first and the second epitaxy layers form a diode. The method further includes forming a gate dielectric over the first epitaxy layer, forming a gate electrode over the gate dielectric, and implanting a top portion of the first epitaxy layer and the second epitaxy layer to form a source/drain region adjacent to the gate dielectric.

Abstract: Uni-wheel personal mobility vehicle with self-balancing function is disclosed. This transportation device can be pedaled by a driving force provided by the driver's manpower and/or the in-wheel motor's electric power. The uni-wheel personal mobility vehicle with self-balancing function is equipped with an inertial sensing and control driving module, an in-wheel motor, and a steering mechanism consisting of a transmission pulley set, an idle pulley set, a transmission cable, and a spring set, therefore the personal mobility vehicle can simultaneously maintain its self balance when being propelled by driver's pedaling force or the in-wheel motor's electrical torque; moreover, the driver can also make the personal mobility electric vehicle change its direction by rotating a handlebar similar to steering a bicycle, wherein the rotation of the handlebar would simultaneously pull one side of the transmission cable via the transmission pulley set to steer the vehicle and maintain its lateral balance.

Abstract: A method for depositing a polysilazane on a semiconductor wafer is provided. The method includes steps of disposing a silazane onto the semiconductor wafer, and heating the silazane to form the polysilazane on the semiconductor wafer. An apparatus for preparing a polysilazane on a semiconductor wafer is also provided.

Abstract: Methods and apparatus for a backside illuminated (BSI) image sensor device are disclosed. A BSI sensor device is formed on a substrate comprising a photosensitive diode. The substrate may be thinned at the backside, then a B doped Epi-Si(Ge) layer may be formed on the backside surface of the substrate. Additional layers may be formed on the B doped Epi-Si(Ge) layer, such as a metal shield layer, a dielectric layer, a micro-lens, and a color filter.

Abstract: Methods of making an integrated circuit are disclosed. An embodiment method includes etching a trench in a silicon substrate, depositing a first layer of isolation material in the trench, the first layer of isolation material projecting above surface of the silicon substrate, capping the first layer of isolation material by depositing a second layer of isolation material, the second layer of isolation material extending along at least a portion of sidewalls of the first layer of isolation material, epitaxially-growing a silicon layer upon the silicon substrate, the silicon layer horizontally adjacent to the second layer of isolation material, and forming a gate structure on the silicon layer, the gate structure defining a channel.

Abstract: A polishing system for polishing a semiconductor wafer includes a wafer support for holding the semiconductor wafer, and a first polishing pad for polishing a region of the semiconductor wafer. The semiconductor wafer has a first diameter, and the first polishing pad has a second diameter shorter than the first diameter.

Abstract: An integrated circuit device and a process for making the integrated circuit device. The integrated circuit device including a substrate having a trench formed therein, a first layer of isolation material occupying the trench, a second layer of isolation material formed over the first layer of isolation material, an epitaxially-grown silicon layer on the substrate and horizontally adjacent the second layer of isolation material, and a gate structure formed on the epitaxially-grown silicon, the gate structure defining a channel.

Abstract: An integrated circuit device and a process for making the integrated circuit device. The integrated circuit device including a substrate having a trench formed therein, a first layer of isolation material occupying the trench, a second layer of isolation material formed over the first layer of isolation material, an epitaxially-grown silicon layer on the substrate and horizontally adjacent the second layer of isolation material, and a gate structure formed on the epitaxially-grown silicon, the gate structure defining a channel.