Abstract: Performing a read operation and a clear operation in a late select array in the same clock cycle, including: receiving, for a late select array stored in memory of a processor, a read operation instruction and a clear operation instruction; executing both the read operation instruction and the clear operation instruction in a single clock cycle, including: loading an entry of the late select array corresponding to a read address included in the read operation instruction; generating a hit result for the read operation instruction based on the entry, wherein the hit result indicates whether a cache stores valid data corresponding to the read operation instruction; clearing an entry of the late select array corresponding to a write address included in the clear operation instruction; and providing an output of the read operation instruction based on a comparison of the read address included in the read operation instruction and the write address included in the clear operation instruction.

Abstract: Performing a read operation and a clear operation in a late select array in the same clock cycle, including: receiving, for a late select array stored in memory of a processor, a read operation instruction and a clear operation instruction; executing both the read operation instruction and the clear operation instruction in a single clock cycle, including: loading an entry of the late select array corresponding to a read address included in the read operation instruction; generating a hit result for the read operation instruction based on the entry, wherein the hit result indicates whether a cache stores valid data corresponding to the read operation instruction; clearing an entry of the late select array corresponding to a write address included in the clear operation instruction; and providing an output of the read operation instruction based on a comparison of the read address included in the read operation instruction and the write address included in the clear operation instruction.

Abstract: An embodiment of a method for qubit tuning includes generating a first magnetic field through a portion of a first layer, the first layer comprising a material exhibiting superconductivity in a cryogenic temperature range, the portion of the first layer above a critical temperature. In an embodiment, the method includes cooling the portion of the first layer at least to the critical temperature. In an embodiment, the method includes generating, in response to cooling the portion of the first layer at least to the critical temperature, a second magnetic field to magnetically interact with a qubit of a quantum processor chip such that a first magnetic flux of the first layer causes a first change in a first resonance frequency of the qubit by a first frequency shift value.

Abstract: A true complement dynamic circuit for combining, in particular comparing, binary data on dynamic first and second input signals to third and fourth input signals, comprising at least a 1-bit compare circuit, wherein the dynamic first and second input signals are complementary signals during an evaluation phase, wherein a logical behavior is determined by the third and fourth input signals. A method for operating a true complement dynamic circuit for combining, in particular comparing, binary data on dynamic first and second input signals to third and fourth input signals, comprising operating at least a 1-bit compare circuit, wherein the dynamic first and second input signals are complementary signals during an evaluation phase, determining a logical behavior by the third and fourth input signals.

Abstract: A true complement dynamic circuit for combining, in particular comparing, binary data on dynamic first and second input signals to third and fourth input signals, comprising at least a 1-bit compare circuit, wherein the dynamic first and second input signals are complementary signals during an evaluation phase, wherein a logical behavior is determined by the third and fourth input signals. A method for operating a true complement dynamic circuit for combining, in particular comparing, binary data on dynamic first and second input signals to third and fourth input signals, comprising operating at least a 1-bit compare circuit, wherein the dynamic first and second input signals are complementary signals during an evaluation phase, determining a logical behavior by the third and fourth input signals.

Abstract: A quantum circuit arrangement with at least one quantum circuit for carrying out a computation on a quantum computer, the quantum circuit arrangement comprising at least a lookup structure being configured for determining a value of a defined function based on a variable represented by a set of qubits, and a binning structure being configured to identify a defined bin based on the variable, wherein the lookup structure is adapted to determine the value of the defined function based on the bin. Further a method implementable on a classical computer for compiling a quantum circuit arrangement with at least one quantum circuit for carrying out a computation on a quantum computer.

Abstract: The disclosure relates to an initialization circuit for initializing memory cells of a memory array including a common bit line. Individual memory cells are coupled to the common bit line of the memory array via at least one pass element of the individual memory cells. The initialization circuit is operable for receiving a set of partition addresses specifying the partitions, i.e. the memory cells to be initialized. The initialization circuit is operable for successively initializing one cell of the partitions to be initialized and iteratively initializing the remaining memory cells of the partitions to be initialized. A number of memory cells initialized simultaneously in one iteration increases from one iteration to another iteration. Initializing a certain memory cell comprises activating the pass element of the cell so that the memory cell is connected to the bit line. Further aspects relate to methods for initializing memory cells and semiconductor circuits.

Abstract: An embodiment of a qubit tuning device includes a first layer configured to generate a magnetic field, the first layer comprising a material exhibiting superconductivity in a cryogenic temperature range. In an embodiment, the qubit tuning device includes a qubit of a quantum processor chip, wherein the first layer is configured to magnetically interact with the qubit such that a first magnetic flux of the first layer causes a first change in a first resonance frequency of the qubit by a first frequency shift value.

Abstract: The disclosure relates to an initialization circuit for initializing memory cells of a memory array including a common bit line. Individual memory cells are coupled to the common bit line of the memory array via at least one pass element of the individual memory cells. The initialization circuit is operable for receiving a set of partition addresses specifying the partitions, i.e. the memory cells to be initialized. The initialization circuit is operable for successively initializing one cell of the partitions to be initialized and iteratively initializing the remaining memory cells of the partitions to be initialized. A number of memory cells initialized simultaneously in one iteration increases from one iteration to another iteration. Initializing a certain memory cell comprises activating the pass element of the cell so that the memory cell is connected to the bit line. Further aspects relate to methods for initializing memory cells and semiconductor circuits.

Abstract: Disclosed aspects relate to a digital logic circuit. A clock generation circuitry has both a clock generation circuitry output and an inverter circuit to generate a derivative clock signal feature by inverting an array clock signal feature. A scannable storage element has both a scannable storage element output and a set of flip-flops. A memory array is connected with the scannable storage element output and the array clock signal feature. The digital logic circuit is configured to avoid a race violation.

Abstract: A memory cell arrangement for Random Access Memory (RAM) including one or more RAM cell groups. The RAM cell groups having two or more local bit-lines sharing a Global Bit-Line (GBL), a pre-charging circuit connected to the GBL, a multiplexer connected to multiple GBLs and configured to shift an output of a first GBL from a first bit to a second bit at least in part according to a value of a fuse bit register associated with a second GBL, and at least one pre-charge enabling circuit controlled by a combination of a pre-charge input value applied to all GBLs of the memory cell arrangement and a pre-charge enable signal for the GBL.

Abstract: A method for adding an electrical interconnection within a three-dimensional integrated circuit (3-D IC) is disclosed. The method may include creating, within a design file of a 3-D IC that specifies a layout for a first chip of the 3-D IC, design data corresponding to a set of through-silicon via (TSV) reservation areas. The method may also include receiving an engineering change order (ECO) and releasing, in response to the ECO, at least one TSV reservation area for reuse. The method may also include adding, by re-using at least one TSV reservation area, an electrical interconnection within the design file of the first chip of the 3-D IC.

Abstract: Embodiments for global bit line latch performance and power optimization are described herein. An aspect includes a bit line including a first section, a second section, and coupling circuitry arranged between the first section and the second section, the coupling circuitry adapted to causes a voltage drop between the first section and the second section, and at least one logic element including a first branch connected to a first power supply and a second branch connected to a second power supply, wherein the first branch is connected to the first section of the bit line, and wherein the second branch is connected to the second section of the bit line.

Abstract: A memory cell arrangement for Random Access Memory (RAM) including one or more RAM cell groups. The RAM cell groups having two or more local bit-lines sharing a Global Bit-Line (GBL), a pre-charging circuit connected to the GBL, a multiplexer connected to multiple GBLs and configured to shift an output of a first GBL from a first bit to a second bit at least in part according to a value of a fuse bit register associated with a second GBL, and at least one pre-charge enabling circuit controlled by a combination of a pre-charge input value applied to all GBLs of the memory cell arrangement and a pre-charge enable signal for the GBL.

Abstract: Embodiments for global bit line latch performance and power optimization are described herein. An aspect includes a bit line including a first section, a second section, and coupling circuitry arranged between the first section and the second section, the coupling circuitry adapted to causes a voltage drop between the first section and the second section, and at least one logic element including a first branch connected to a first power supply and a second branch connected to a second power supply, wherein the first branch is connected to the first section of the bit line, and wherein the second branch is connected to the second section of the bit line.

Abstract: An embodiment of a qubit tuning device includes a first layer configured to generate a magnetic field, the first layer comprising a material exhibiting superconductivity in a cryogenic temperature range. In an embodiment, the qubit tuning device includes a qubit of a quantum processor chip, wherein the first layer is configured to magnetically interact with the qubit such that a first magnetic flux of the first layer causes a first change in a first resonance frequency of the qubit by a first frequency shift value.

Abstract: An embodiment of a method for qubit tuning includes generating a first magnetic field through a portion of a first layer, the first layer comprising a material exhibiting superconductivity in a cryogenic temperature range, the portion of the first layer above a critical temperature. In an embodiment, the method includes cooling the portion of the first layer at least to the critical temperature. In an embodiment, the method includes generating, in response to cooling the portion of the first layer at least to the critical temperature, a second magnetic field to magnetically interact with a qubit of a quantum processor chip such that a first magnetic flux of the first layer causes a first change in a first resonance frequency of the qubit by a first frequency shift value.

Abstract: Disclosed aspects relate to a digital logic circuit. A clock generation circuitry has both a clock generation circuitry output and an inverter circuit to generate a derivative clock signal feature by inverting an array clock signal feature. A scannable storage element has both a scannable storage element output and a set of flip-flops. A memory array is connected with the scannable storage element output and the array clock signal feature. The digital logic circuit is configured to avoid a race violation.

Abstract: The present invention provides a system and method of testing CAMs and RAMs. In an exemplary embodiment, the system includes a multiple input signature register (MISR) logically coupled to digital outputs of a CAM, to digital inputs of a RAM, and to digital outputs of an ABIST controller circuit, where the MISR includes a plurality of L1 latch circuits logically coupled to a plurality of L2 latch circuits, a plurality of multiplexer circuits logically coupled to the plurality of L1 latch circuits, a plurality of exclusive or circuits (inner XOR circuits) logically coupled to the plurality of MUX circuits and to the plurality of L2 latch circuits, and at least two XOR circuits (outer XOR circuits), each of the outer XOR circuits logically coupled to one of the inner XOR circuits, to at least one of the MUX circuits, and to at least one of the L2 latch circuits.

Abstract: Disclosed aspects relate to a digital logic circuit. A clock generation circuitry has both a clock generation circuitry output and an inverter circuit to generate a derivative clock signal feature by inverting an array clock signal feature. A scanable storage element has both a scanable storage element output and a set of flip-flops. A memory array is connected with the scanable storage element output and the array clock signal feature. The digital logic circuit is configured to avoid a race violation.