Abstract: A memory may include first to Nth cell arrays configured to include a plurality of memory cells and one or more first to Nth data input/output pads respectively corresponding to the first to Nth cell arrays, wherein the one or more first to Nth data input/output pads are configured to input/output data to/from the first to Nth cell arrays.

Abstract: A semiconductor system includes a semiconductor chip; a penetrating electrode, which is formed to penetrate the semiconductor chip; two or more metals, which are formed in the upper portion of the penetrating electrode; a bump, which is formed to contact the upper portions of the metals and supplies a data signal inputted from outside to the metals; a detection block suitable for detecting whether or not the bump is coupled with the metals by comparing voltage levels of the metals with each other and generating a decision signal; and a signal output block suitable for outputting the decision signal externally.

Abstract: A semiconductor device includes a through electrode vertically passing through the semiconductor device; a metal pad electrically coupling the through electrode and an exterior; a data input block suitable for transferring a data signal to the metal pad in response to a write command; a through electrode storage block suitable for storing the data signal transferred through the metal pad; and a data output block suitable for outputting the data signal, which is stored in the through electrode storage block, to the exterior in response to a read command.

Abstract: A semiconductor system includes a semiconductor chip; a penetrating electrode, which is formed to penetrate the semiconductor chip; two or more metals, which are formed in the upper portion of the penetrating electrode; a bump, which is formed to contact the upper portions of the metals and supplies a data signal inputted from outside to the metals; a detection block suitable for detecting whether or not the bump is coupled with the metals by comparing voltage levels of the metals with each other and generating a decision signal; and a signal output block suitable for outputting the decision signal externally.

Abstract: The semiconductor apparatus includes a reference delay value check unit configured to receive a source signal and delay the source signal to generate a reference delay signal; a process delay value check unit configured to receive the source signal and delay the source signal to generate a process delay signal; and a signal generation unit configured to receive the reference delay signal and the process delay signal, receive an input signal, and variably delay the input signal based on the reference delay signal and the process delay signal to generate an output signal.

Abstract: A semiconductor apparatus with a through via includes a semiconductor chip and a through via formed by penetrating through the semiconductor chip. The system further includes a first metal layer connected to a portion of the through via at an end of the through via and a second metal layer connected to another portion of the through via at the end of the through via.

Abstract: A semiconductor apparatus having a through via to be electrically coupled with a chip includes a latch memory cell configured to be electrically coupled with the through via and receive a signal transmitted through the through via, and output a stored signal to the through via.

Abstract: Provided is a semiconductor apparatus including a plurality of semiconductor chips coupled through an electrical coupling unit. Each of the semiconductor chips includes: a chip ID signal generation unit configured to generate a chip ID signal; and a chip enable signal generation unit configured to receive a clock enable signal in response to the chip ID signal, wherein one of the semiconductor chips shares the received clock enable signal as a transfer clock enable signal with the other semiconductor chips, and the chip enable signal generation unit detects whether or not an error occurs in the chip ID signals of the plurality of semiconductor chips, selects any one of the transfer clock enable signal and the clock enable signal applied, and outputs the selected signal as a chip enable signal.

Abstract: A semiconductor memory device includes a first semiconductor chip including a first pad group configured to input/output first data and a second pad group configured to input/output second data; and a second semiconductor chip in a stack with the first semiconductor chip and configured to be electrically connected to the first semiconductor chip by at least one chip through via, wherein the second semiconductor chip includes a first unit bank group including at least one first upper bank group and at least one first lower bank group, a second unit bank group including at least one second upper bank group and at least one second lower bank group, and a data path selector configured to electrically connect one among the first and second upper bank groups and the first and second lower bank groups with the chip through via.

Abstract: A semiconductor apparatus having a data bit inversion function and, the semiconductor apparatus including a first semiconductor chip and a second semiconductor chip electrically coupled to the first semiconductor chip, wherein the first semiconductor chip may be configured to receive data and a data bit inversion flag, and transfer the data to the second semiconductor chip, and the second semiconductor chip may be configured to invert and store the data, which is transferred from the first semiconductor chip, according to to the data bit inversion flag.

Abstract: Provided is a semiconductor apparatus including a plurality of semiconductor chips coupled through an electrical coupling unit. Each of the semiconductor chips includes: a chip ID signal generation unit configured to generate a chip ID signal; and a chip enable signal generation unit configured to receive a clock enable signal in response to the chip ID signal, wherein one of the semiconductor chips shares the received clock enable signal as a transfer clock enable signal with the other semiconductor chips, and the chip enable signal generation unit detects whether or not an error occurs in the chip ID signals of the plurality of semiconductor chips, selects any one of the transfer clock enable signal and the clock enable signal applied, and outputs the selected signal as a chip enable signal.

Abstract: A memory may include first to Nth cell arrays configured to include a plurality of memory cells and one or more first to Nth data input/output pads respectively corresponding to the first to Nth cell arrays, wherein the one or more first to Nth data input/output pads are configured to input/output data to/from the first to Nth cell arrays.

Abstract: A semiconductor apparatus includes a multi-chip module which multi-chip module comprises a first and a second chips. The semiconductor apparatus comprises a first data line in the first chip to carry first read data; a first controller, in the first chip, configured to generate first output data on a first output data line in the first chip based on the first read data transmitted from the first data line; a first data transmitter configured to electrically connect the first output data line to the second chip.

Abstract: A semiconductor memory apparatus having stacked first and second chips includes a first chip test signal generation unit disposed in the first chip and configured to generate a first chip test signal in response to a first chip compression data determination signal in a test mode, a second chip test signal generation unit disposed in the second chip and configured to generate a second chip test signal in response to a second chip compression data determination signal in the test mode, and a final data determination unit configured to generate a final test signal in response to the first and second chip test signals in the test mode.

Abstract: A semiconductor memory device includes a first signal generation unit configured to sequentially generate first and second delay signals in response to a first column control signal, the first and second delay signals having reflected a delay time and a multiplied delay time selected from a plurality of delay times in correspondence with an arrangement location of a unit memory region, through data is input/output, respectively, and a second signal generation unit configured to generate a second column control signal delayed by the selected delay time as compared with the first column control signal, to determine an activation time point of the second column control signal in response to the first delay signal, and to determine a deactivation time point of the second column control signal in response to the second delay signal.

Abstract: The semiconductor apparatus includes a reference delay value check unit configured to receive a source signal and delay the source signal to generate a reference delay signal; a process delay value check unit configured to receive the source signal and delay the source signal to generate a process delay signal; and a signal generation unit configured to receive the reference delay signal and the process delay signal, receive an input signal, and variably delay the input signal based on the reference delay signal and the process delay signal to generate an output signal.

Abstract: The semiconductor apparatus includes a reference delay value check unit configured to receive a source signal and delay the source signal to generate a reference delay signal; a process delay value check unit configured to receive the source signal and delay the source signal to generate a process delay signal; and a signal generation unit configured to receive the reference delay signal and the process delay signal, receive an input signal, and variably delay the input signal based on the reference delay signal and the process delay signal to generate an output signal.

Abstract: A semiconductor memory device includes a memory cell array comprising a normal memory cell and a redundancy memory cell and configured to store data, a data compression unit configured to compress data stored in the memory cell array and generate compression information, and a repair control unit configured to control a repair operation for accessing the redundancy memory cell in response to the compression information.

Abstract: A semiconductor memory device includes a first semiconductor chip including a first pad group configured to input/output first data and a second pad group configured to input/output second data; and a second semiconductor chip in a stack with the first semiconductor chip and configured to be electrically connected to the first semiconductor chip by at least one chip through via, wherein the second semiconductor chip includes a first unit bank group including at least one first upper bank group and at least one first lower bank group, a second unit bank group including at least one second upper bank group and at least one second lower bank group, and a data path selector configured to electrically connect one among the first and second upper bank groups and the first and second lower bank groups with the chip through via.

Abstract: A semiconductor memory apparatus includes: a read/write control unit configured to generate a write control signal and a read control signal using internal signals generated through separate signal paths in response to a write command and a read command respectively; and a plurality of ranks configured to perform a write operation or read operation according to the write control signal or the read control signal.