Abstract: A semiconductor (10) has an active device, such as a transistor, with a directly underlying passive device, such as a capacitor (75, 77, 79), that are connected by a via or conductive region (52) and interconnect (68, 99). The via or conductive region (52) contacts a bottom surface of a diffusion or source region (22) of the transistor and contacts a first (75) of the capacitor electrodes. A laterally positioned vertical via (32, 54, 68) and interconnect (99) contacts a second (79) of the capacitor electrodes. A metal interconnect or conductive material (68) may be used as a power plane that saves circuit area by implementing the power plane underneath the transistor rather than adjacent the transistor.

Abstract: A semiconductor (10) has an active device, such as a transistor, with a directly underlying passive device, such as a capacitor (75, 77, 79), that are connected by a via or conductive region (52) and interconnect (68, 99). The via or conductive region (52) contacts a bottom surface of a diffusion or source region (22) of the transistor and contacts a first (75) of the capacitor electrodes. A laterally positioned vertical via (32, 54, 68) and interconnect (99) contacts a second (79) of the capacitor electrodes. A metal interconnect or conductive material (68) may be used as a power plane that saves circuit area by implementing the power plane underneath the transistor rather than adjacent the transistor.

Abstract: A semiconductor (10) has an active device, such as a transistor, with a directly underlying passive device, such as a capacitor (75, 77, 79), that are connected by a via or conductive region (52) and interconnect (68, 99). The via or conductive region (52) contacts a bottom surface of a diffusion or source region (22) of the transistor and contacts a first (75) of the capacitor electrodes. A laterally positioned vertical via (32, 54, 68) and interconnect (99) contacts a second (79) of the capacitor electrodes. A metal interconnect or conductive material (68) may be used as a power plane that saves circuit area by implementing the power plane underneath the transistor rather than adjacent the transistor.

Abstract: A conductive line varies in thickness to assist in overcoming RC delays and noise coupling. By varying line thickness, variation in conductor width is avoided if necessary to maintain a specified minimum pitch between conductors while maintaining predetermined desired RC parameters and noise characteristics of the conductive line. Conductor depth variation is achieved by etching a dielectric layer to different thicknesses. A subsequent conductive fill over the dielectric layer and in the differing thicknesses results in a conductive line that varies in thickness. Different conductive line thicknesses available at a particular metal level can additionally be used for semiconductor structures other than a signal or a power supply conductive line, such as a contact, a via or an electrode of a device. The thickness analysis required to determine how interconnect thickness is varied in order to meet a desired design criteria may be automated and provided as a CAD tool.

Abstract: A capacitive charge pump that can be implemented in such devices as e.g. a phase locked loop (PLL). The charge pump includes at least one capacitor in the charge path and discharge path for limiting the amount of charge provided to or removed from a filter capacitor of a PLL. In one example, a second capacitor may be provided in the charge path or discharge path to reduce the capacitance (if provided in series) or increase the capacitance (if provided in parallel) to adjust the maximum amount of charge transferred to a filter capacitor. In one example, multiple capacitive stages may be implemented in parallel to increase the maximum amount of charge transferred to a filter capacitor. Each stage is enabled after a delayed period of time from when the previous stage was enabled.

Abstract: A semiconductor (10) has an active device, such as a transistor, with a directly underlying passive device, such as a capacitor (75, 77, 79), that are connected by a via or conductive region (52) and interconnect (68, 99). The via or conductive region (52) contacts a bottom surface of a diffusion or source region (22) of the transistor and contacts a first (75) of the capacitor electrodes. A laterally positioned vertical via (32, 54, 68) and interconnect (99) contacts a second (79) of the capacitor electrodes. A metal interconnect or conductive material (68) may be used as a power plane that saves circuit area by implementing the power plane underneath the transistor rather than adjacent the transistor.

Abstract: A conductive line varies in thickness to assist in overcoming RC delays and noise coupling. By varying line thickness, variation in conductor width is avoided if necessary to maintain a specified minimum pitch between conductors while maintaining predetermined desired RC parameters and noise characteristics of the conductive line. Conductor depth variation is achieved by etching a dielectric layer to different thicknesses. A subsequent conductive fill over the dielectric layer and in the differing thicknesses results in a conductive line that varies in thickness. Different conductive line thicknesses available at a particular metal level can additionally be used for semiconductor structures other than a signal or a power supply conductive line, such as a contact, a via or an electrode of a device. The thickness analysis required to determine how interconnect thickness is varied in order to meet a desired design criteria may be automated and provided as a CAD tool.

Abstract: A capacitive charge pump that can be implemented in such devices as e.g. a phase locked loop (PLL). The charge pump includes at least one capacitor in the charge path and discharge path for limiting the amount of charge provided to or removed from a filter capacitor of a PLL. In one example, a second capacitor may be provided in the charge path or discharge path to reduce the capacitance (if provided in series) or increase the capacitance (if provided in parallel) to adjust the maximum amount of charge transferred to a filter capacitor. In one example, multiple capacitive stages may be implemented in parallel to increase the maximum amount of charge transferred to a filter capacitor. Each stage is enabled after a delayed period of time from when the previous stage was enabled.

Abstract: A conductive line varies in thickness to assist in overcoming RC delays and noise coupling. By varying line thickness, variation in conductor width is avoided if necessary to maintain a specified minimum pitch between conductors while maintaining predetermined desired RC parameters and noise characteristics of the conductive line. Conductor depth variation is achieved by etching a dielectric layer to different thicknesses. A subsequent conductive fill over the dielectric layer and in the differing thicknesses results in a conductive line that varies in thickness. Different conductive line thicknesses available at a particular metal level can additionally be used for semiconductor structures other than a signal or a power supply conductive line, such as a contact, a via or an electrode of a device. The thickness analysis required to determine how interconnect thickness is varied in order to meet a desired design criteria may be automated and provided as a CAD tool.

Abstract: An integrated circuit is made by utilizing a delay and/or capacitance model and/or setup/hold time model which provides for the ability to isolate issues of transistor performance, metallization capacitance, metallization resistance, power supply voltage, and temperature for the individual design blocks that make up the integrated circuit. This is achieved by utilizing an equation representative of these performance characteristics as certain variables in the equation. The equation also has constants which are determined by first running the design blocks through a standard circuit simulator. The result is a different set of these constants for each design block. Various signal paths are made up of various design blocks so that each path can be analyzed by analyzing the performance of the individual blocks that make up the path. Thus, areas of improvement for the design blocks are more easily identified prior to actually making the integrated circuit.

Abstract: A temperature sensor having a process compensated current generator (37) for use in a temperature sensing circuit (35) and a current comparator (40). The current generated in reference current generator (36) provides a complementary distortion to balance the effect introduced by processing into the two circuits which make up temperature dependent current generator (38). The generator generates two currents which are used to measure temperature changes. The generator including both PFET and bipolar devices, where the generator compensates for variations in processing conditions. According to one embodiment, the temperature sensor includes a process compensation generator which provides an indicator as a function of at least one processing parameter and a current generator which adjusts the currents according to the indicator.

Abstract: A thermal sensing element (10) incorporates a vertical pnp bipolar transistor (12) whose BETA is dependent on temperature. This known relationship can be used to build a temperature sensor (200, 300), that is inexpensive, reliable, and whose process variance is predictable.

Abstract: An output buffer translates digital input signals which toggle between ground and V.sub.DDL to signals which toggle between ground and V.sub.DDH. The technology dielectric breakdown voltage limit is less than the magnitude of V.sub.DDH, such that use of a traditional output stage would subject transistors' dielectrics to voltages which exceed their dielectric breakdown limit, and would thus be damaged. Predrive circuits (40, 50) control output stage (70) transistors' (72, 78) gates, and voltage dropping circuits control output stage (70) transistors (74, 76). These control signals are generated specifically to maximize output stage transistor drive strengths, thereby minimizing output stage size. Output buffer functions when V.sub.DDL =V.sub.DDH, and its performance is V.sub.DDL independent. Temperature compensation is incorporated into the output buffer by deliberately offsetting temperature effects on output stage transistor drive strengths.

Abstract: Output buffer (100) translates input signals from one voltage range to a second voltage range. The second voltage range may be identical to the first range or may be greater. The particular range is programmable by one of several ways. This feature makes output buffer especially suitable for use in devices which must be compatible with two voltage ranges. Output buffer uses a bias generator (110) to limit the voltage across the gate oxide of its various transistors to a level which is consistent with the first voltage range.

Abstract: Level shifting circuit (36) utilizes self-timed pulse generators (40, 46) to provide a series of pulses in response to an input signal. The pulses are used to create a pulse of specified duration at a predetermined voltage level at first and second nodes (44, 45). In response to the predetermined pulses, shifted inverters (50, 52) provide a voltage output of either V.sub.DDH or V.sub.DDL, one of two different voltages which exist in a system utilizing the level shifter (36). In one form, level shifting circuit (36) may be used in an output buffer (60) to interface an integrated circuit designed to operate at a low supply voltage with additional integrated circuits operating at a higher supply voltage which could damage the gate oxide of the transistors in the low supply voltage integrated circuit.

Abstract: A temperature sensor (1800) incorporates two diodes (1802, 1804). The voltage difference across each diode is a linear function of temperature. The voltage difference between the two diodes is also a function of the ratio of their respective sizes. These relationships can be used to build a sensor that is inexpensive, reliable, and whose process variance is predictable.

Abstract: A phase locked loop (10) has a first (24) and a second (28) feedback path by which a generated clock signal may be phase and frequency matched to an input reference clock signal. The two feedback paths are delay matched so either one may be used to maintain "PLL lock." However, the first path consumes significantly less power than the second path. Control circuitry (22) selects which path is fed back through a multiplexer (126) and disables the second path when the path is not needed.

Abstract: A charge pump has a reference circuitry (18, 20, 22), a first parallel current path (16), at least one second parallel current path (16), a mirror circuit (46), a sourcing circuitry (60, 62) and a sinking circuitry (50, 54, 66, 68). The first and the at least one second parallel current path sink current from a first node responsive to a predetermined voltage generated by the reference circuitry. The at least one second current path also operates responsive to a control signal. The mirror circuit generates a second predetermined voltage responsive to the total current sunk from the first node. The sourcing circuitry and the sinking circuitry sourcing and sinking a current from the output node, respectively, responsive to the second predetermined voltage and to a control signal. The disclosed charge pump may be incorporated into a phase locked loop circuit where constant stability parameters are desired.