Abstract: Temperature sensing circuitry implemented on a semiconductor integrated circuit that senses the temperature at a site, digitizes the sensed temperature, and then outputs a signal representing such a sensed temperature. The temperature sensing circuitry converts a voltage signal that is proportional to the temperature to a frequency-based signal, which is converted to a digital bit value. A scalar factor is applied to another voltage signal that is inversely proportional to the temperature to produce a scaled voltage signal. The scaled voltage signal is converted to a second frequency-based signal, which is converted to a digital bit value, and then the two digital bit values are compared. The temperature is determined when the digital bit values substantially match.

Abstract: A thermal sensor system which includes a thermal sensor and a voltage control network which applies a reference voltage level and a delta voltage level to the same or different thermal sensors. The thermal sensor develops a reference current signal in response to the reference voltage level and a delta current signal in response to the delta voltage level. A current gain network adjusts gain of the delta current signal. A current compare sensor, which is responsive to the reference current signal and the delta current signal, provides a comparison metric. A controller controls the current gain network to adjust gain of the delta current signal while monitoring the comparison metric to determine a gain differential value indicative of a current ratio between the current signals. The controller determines a temperature value based on the gain differential value. A LUT may be used to retrieve the temperature.

Abstract: In accordance with at least one embodiment, an improved voltage headroom self-biased receiver is provided. In accordance with at least one embodiment, tail current sources are biased so as to be cross-coupled with respect to each other. In accordance with at least one embodiment, startup control is provided to counter defect-induced current and to ensure the circuit can function properly even with large amounts of defect current. In accordance with at least one embodiment, a positive type (p type) channel metal oxide semiconductor (PMOS) tail current transistor is modulated by a negative type (n type) channel metal oxide semiconductor (NMOS) differential pair virtual negative supply voltage and a NMOS tail current transistor is modulated by a PMOS differential pair virtual positive supply voltage. The amplifier's output common mode is thus self correcting to p type to n type transistor strength differences.

Abstract: A voltage translation circuit (116) provides an output analog voltage signal that has a translated voltage of the voltage of an input analog voltage signal over a range of values of the input analog voltage signal. The voltage translation circuit includes an input stage (202) having a circuit node and an input transistor (210) coupled between the circuit node and a power supply terminal, wherein a gate of the input transistor is coupled to receive the input analog voltage signal; a current path circuit (204) in parallel with the input transistor, wherein the current path includes a first transistor coupled between the circuit node and the power supply terminal; and a circuit coupled to provide a variable body bias voltage to a body of the first transistor.

Abstract: An IC includes: a substrate having a thick oxide portion and a thin oxide portion; a load circuit disposed on the thin oxide portion and coupled between a supply node and a virtual supply node; and a current source circuit and protection circuit disposed on the substrate. The current source circuit has an output coupled to the virtual supply node and is operable to provide a voltage at the virtual supply node. The protection circuit includes a sensing portion and a protection portion. The sensing portion is coupled to the virtual supply node and is operable to detect the voltage at the virtual supply node. The protection portion is coupled to the sensing portion and is operable, in response to the sensed voltage, to prevent a difference in voltage between the voltage at the virtual supply node and a second voltage at the supply node from exceeding a maximum voltage.

Abstract: A driver circuit having an adjustable output signal includes a logic circuit configured to receive an input signal into a first input terminal and an output circuit coupled to the logic circuit, wherein the output circuit is configured to generate, at an output terminal of the output circuit, an output signal having a signal level that changes in response to a signal level of the input signal. The driver circuit further includes a feedback circuit coupled to a second input terminal of the logic circuit. The feedback circuit includes first and second gate terminals coupled to the output terminal and a third gate terminal coupled to a control signal supply, wherein the feedback circuit is configured to control a maximum level of the output signal from the driver circuit based on an operating threshold of the feedback circuit as set by a control signal generated by the control signal supply.

Abstract: A phase locked loop having a normal mode and a burn-in mode. The logic portion is coupled to a logic power supply terminal and includes a clock receiver coupled to a phase frequency detector. The analog portion has a charge pump coupled to the phase frequency detector and to an analog power supply terminal. The analog portion also has a voltage controlled oscillator coupled to the charge pump at an analog node and to the analog power supply terminal. The phase locked loop has a node control circuit that is coupled to the analog node during the burn-in mode that controls a voltage at the analog node sufficiently below a voltage at the analog power supply terminal to avoid over-stressing the charge pump and the voltage controlled oscillator during the burn-in mode.

Abstract: A thermal sensor system including at least one thermal sensor, a voltage control network, a current gain network, a current compare sensor, and a controller. The voltage control network applies reference and delta voltage levels to a thermal sensor, which develops reference and delta current signals. The current gain network is used to adjust current gain. The current compare sensor is responsive to the reference and delta current signals and provides a comparison metric. The controller selects a temperature subrange and controls the current gain network to adjust the gain of the delta current signal to determine a gain differential value indicative of the temperature. The controller may select from among different sized thermal sensors, current mode gain values, and control voltages corresponding with each of multiple temperature subranges. Any one or more of these parameters may be adjusted to adjust an operating point for selecting a corresponding temperature subrange.

Abstract: A thermal sensor system which includes a thermal sensor and a voltage control network which applies a reference voltage level and a delta voltage level to the same or different thermal sensors. The thermal sensor develops a reference current signal in response to the reference voltage level and a delta current signal in response to the delta voltage level. A current gain network adjusts gain of the delta current signal. A current compare sensor, which is responsive to the reference current signal and the delta current signal, provides a comparison metric. A controller controls the current gain network to adjust gain of the delta current signal while monitoring the comparison metric to determine a gain differential value indicative of a current ratio between the current signals. The controller determines a temperature value based on the gain differential value. A LUT may be used to retrieve the temperature.

Abstract: A voltage translation circuit (116) provides an output analog voltage signal that has a translated voltage of the voltage of an input analog voltage signal over a range of values of the input analog voltage signal. The voltage translation circuit includes an input stage (202) having a circuit node and an input transistor (210) coupled between the circuit node and a power supply terminal, wherein a gate of the input transistor is coupled to receive the input analog voltage signal; a current path circuit (204) in parallel with the input transistor, wherein the current path includes a first transistor coupled between the circuit node and the power supply terminal; and a circuit coupled to provide a variable body bias voltage to a body of the first transistor.

Abstract: A component for a vehicle latch assembly is provided, the component having: an electrical sub-system having a plurality of circuit paths each being electrically connected to a common ground, the electrical sub-system being molded into a pre-mold by a first molding process, the pre-mold comprising an encapsulation layer molded around the common ground and an at least one structural member secured to the encapsulation layer and at least one of the plurality of circuit paths, the structural member providing rigidity to the pre-mold; and a plurality of locating features extending from at least one of the encapsulation layer and the structural member.

Abstract: A level shifter includes first, second and third capacitively configured transistors, first and second switching transistors, and an inverting circuit. The first capacitively configured transistor has a first terminal that receives an input signal. Second and third capacitively configured transistor each have first terminal coupled to a second terminal of the first capacitively configured transistor. The second capacitively configured transistor is coupled in series with a first switching transistor that is also coupled to a first power supply terminal. The third capacitively configured transistor is coupled in series with a second switching transistor that is also coupled to a second power supply terminal.

Abstract: An integrated circuit including a state retention node, a conductive clock network shielding and multiple state retention devices for maintaining a state of the integrated circuit during the low power state. The state retention node receives a state retention supply voltage which remains at an operative voltage level during a low power state. The conductive clock network shielding is distributed with clock signal conductors and is coupled to the state retention node. Each state retention device has a supply voltage input coupled to the clock network shielding so that it remains powered during the low power state. The state retention node may be implemented as a minimal set of conductive traces. A state retention buffer may be provided for buffering a power gating signal indicative of the low power state, in which the buffer has a supply voltage input coupled to the clock network shielding.

Abstract: An integrated circuit including a state retention node, a conductive clock network shielding and multiple state retention devices for maintaining a state of the integrated circuit during the low power state. The state retention node receives a state retention supply voltage which remains at an operative voltage level during a low power state. The conductive clock network shielding is distributed with clock signal conductors and is coupled to the state retention node. Each state retention device has a supply voltage input coupled to the clock network shielding so that it remains powered during the low power state. The state retention node may be implemented as a minimal set of conductive traces. A state retention buffer may be provided for buffering a power gating signal indicative of the low power state, in which the buffer has a supply voltage input coupled to the clock network shielding.

Abstract: A component for a vehicle latch assembly is provided, the component having: an electrical sub-system having a plurality of circuit paths each being electrically connected to a common ground, the electrical sub-system being molded into a pre-mold by a first molding process, the pre-mold comprising an encapsulation layer molded around the common ground and an at least one structural member secured to the encapsulation layer and at least one of the plurality of circuit paths, the structural member providing rigidity to the pre-mold; and a plurality of locating features extending from at least one of the encapsulation layer and the structural member.

Abstract: A phase locked loop (PLL) includes a phase frequency detector powered by a first analog supply voltage; a charge pump powered by a second analog supply voltage, different from the first analog supply voltage; a voltage controlled oscillator (VCO) powered by a third analog supply voltage, different from the first and second analog supply voltages, wherein a frequency of the VCO is controlled by a control voltage; and a supply voltage provider having a first circuit node coupled to a fourth analog supply voltage, a second circuit node which provides the first analog supply voltage, a third circuit node which provides the second analog supply voltage, and a fourth circuit node which provides the third analog supply voltage, and a current compensator coupled to one of the second, third, or fourth circuit nodes, wherein the current compensator provides a variable current draw based on the control voltage.

Abstract: In accordance with at least one embodiment, an improved voltage headroom self-biased receiver is provided. In accordance with at least one embodiment, tail current sources are biased so as to be cross-coupled with respect to each other. In accordance with at least one embodiment, startup control is provided to counter defect-induced current and to ensure the circuit can function properly even with large amounts of defect current. In accordance with at least one embodiment, a positive type (p type) channel metal oxide semiconductor (PMOS) tail current transistor is modulated by a negative type (n type) channel metal oxide semiconductor (NMOS) differential pair virtual negative supply voltage and a NMOS tail current transistor is modulated by a PMOS differential pair virtual positive supply voltage. The amplifier's output common mode is thus self correcting to p type to n type transistor strength differences.

Abstract: A phase locked loop device includes a phase detector that measures a difference in phase between a reference clock signal and an output clock signal provided to a device module. The phase detector provides a pulse having a width indicative of the phase difference. If the phase difference exceeds one of a plurality of threshold values, an indicator can be asserted. Based on the indicator, a control module can take remedial action, such as providing a different clock signal to the device module or triggering an interrupt at a processor device.

Abstract: A phase locked loop device includes a phase detector that measures a difference in phase between a reference clock signal and an output clock signal of the phase locked loop. The phase detector provides a pulse having a width indicative of the phase difference. A phase measurement module determines a digital value based on the pulse width. Accordingly, the digital value provides an indication of the phase difference between the reference clock signal and the output clock signal. A series of the digital values can be recorded to indicate how the phase difference varies over time, thereby providing a useful characterization of device behavior.

Abstract: A voltage regulator regulates voltage at a node and has circuitry coupled to the node for providing a current to the node. A regulating transistor coupled between the node and a first power supply voltage terminal has a disabling transistor coupled in parallel and is selectively disabled by directly connecting the first power supply voltage terminal to the node. An inverting stage has an output connected to the regulating transistor. A load transistor has a first current electrode coupled to a second power supply voltage terminal, and a control electrode and second current electrode connected together and coupled to an input of the inverting stage. A sensing transistor has a first current electrode coupled to the second current electrode of the load transistor, a control electrode connected directly to the node and a second current electrode coupled to the first power supply voltage terminal.