Abstract: A semiconductor package and a method of manufacturing the same are disclosed, wherein the semiconductor package includes a circuit board, a semiconductor chip mounted on the circuit board, an encapsulant positioned on the circuit board and encapsulating the semiconductor chip to the circuit board, and a thermal dissipating member positioned on the encapsulant and having a heat spreader that dissipates a driving heat from the semiconductor chip and a heat capacitor that absorbs excess driving heat that exceeds a heat transfer capability of the heat spreader, such that when a high power is applied to the package, the excess heat is absorbed into the heat capacitor as a latent heat and thus the semiconductor chip is protected from an excessive temperature increase caused by the excess heat, thereby increasing a critical time and performance duration time of the semiconductor package.

Abstract: A semiconductor package includes a substrate in which a plurality of wires are formed; at least one semiconductor chip electrically connected to portions of the plurality of wires; and a shielding can mounted on the substrate, surrounding the at least one semiconductor chip, electrically connected to at least one wire of the plurality of wires and including a soft magnetic material. The semiconductor package can prevent or substantially reduce electromagnetic interference (EMI).

Abstract: A semiconductor package includes a mounting substrate having a chip-mounting region and a peripheral region. A first semiconductor chip is mounted on the chip-mounting region of the mounting substrate. A first molding member covers at least a portion of the first semiconductor chip on the mounting substrate. A plurality of first conductive connection members penetrate through at least a portion of the first molding member to protrude from the first molding member. The first conductive connection members are electrically connected to a plurality of ground connection pads provided on the peripheral region of the mounting substrate, respectively. An electromagnetic interference (EMI) shield member is disposed on an upper surface of the first molding member to cover the first semiconductor chip. The EMI shield member is supported by the first conductive molding members and spaced apart from the first molding member.

Abstract: A semiconductor package includes a substrate in which a plurality of wires are formed; at least one semiconductor chip electrically connected to portions of the plurality of wires; and a shielding can mounted on the substrate, surrounding the at least one semiconductor chip, electrically connected to at least one wire of the plurality of wires and including a soft magnetic material. The semiconductor package can prevent or substantially reduce electromagnetic interference (EMI).

Abstract: A semiconductor package and testing method is disclosed. The package includes a substrate having top and bottom surfaces, a semiconductor chip mounted in a centrally located semiconductor chip mounting area of the substrate, and a plurality of test pads disposed on top and bottom surfaces of the substrate and comprising a first group of test pads configured on the top and bottom surfaces of the substrate and having a first height above the respective top and bottom surface of the substrate, and a second group of test pads disposed on the lower surface of the substrate and having a second height greater than the first, wherein each one of the second group of test pads includes a solder ball attached thereto.

Abstract: Example embodiments relate to a semiconductor device. The semiconductor device may include a first semiconductor chip including a semiconductor substrate, a first through via that penetrates the semiconductor substrate, a second semiconductor chip stacked on one plane of the first semiconductor chip, and a shielding layer covering at least one portion of the first and/or second semiconductor chip and electrically connected to the first through via.

Abstract: A semiconductor package removes power noise by using a ground impedance. The semiconductor package includes an analog circuit block, a digital circuit block, an analog ground impedance structure, a digital ground impedance structure, and an integrated ground. The integrated ground and the analog circuit block are electrically connected via the analog ground impedance structure, and the integrated ground and the digital circuit block are electrically connected via the digital ground impedance structure, and an inductance of the analog ground impedance structure is greater than an inductance of the digital ground impedance structure.

Abstract: A semiconductor chip carrier having multiple conductive layers separated from each other by dielectric layers, a chip bonding position at an intermediate portion of a top surface of the semiconductor chip carrier, and a bonding region spaced apart from the chip bonding position. The bonding region includes a first bonding region closest to the chip bonding position, a second bonding region most distant from the chip bonding position, and a third bonding region positioned between the first bonding region and the second bonding region. The first bonding region, the second bonding region and the third bonding region are electrically insulated from each other and the first bonding region is configured to carry a first voltage, the second bonding region is configured to carry a second voltage and the third bonding region is configured to carry a third voltage that is less than the first voltage and less than the second voltage.

Abstract: An electronic device includes first and second interconnections formed on a first surface of a substrate and spaced apart from each other. The electronic device includes a first insulating material layer disposed on the substrate including the first and second interconnections and including a first opening exposing a predetermined region of the first interconnection. The electronic device further includes a first pad filling the first opening and having a greater width than the first opening. The first pad covers at least a part of the second interconnection adjacent to one end of the first interconnection, and the first pad is electrically insulated from the second interconnection by the first insulating material layer.

Abstract: A semiconductor package includes a main substrate, a semiconductor chip having a first side and a second side, the first side of the semiconductor chip disposed on the main substrate and electrically connected to the main substrate, and a conductive network formed on the second side of the semiconductor chip.

Abstract: A package on package (PoP) employing a through substrate via (TSV) technique in order to reduce the size of a semiconductor chip, has vertically narrow pitches, and forms a higher number of connection terminals. The PoP include a first substrate with a recess disposed in a first surface of the substrate, and a semiconductor chip disposed at the recess. The PoP also includes a semiconductor package connected to the first semiconductor package. The first substrate includes TSVs for electronically connecting the semiconductor package and the semiconductor chip, and routing lines for re-distributing the signals/and or power transmitted via the TSVs.

Abstract: A semiconductor chip can include a semiconductor substrate, an input portion and an output portion. A circuit element can be formed in the semiconductor substrate. The input portion can be formed on the semiconductor substrate. The input portion can include a first input pad to receive an input signal from the outside and a second input pad spaced apart from the first input pad, the second input pad being electrically connected to the first input pad through an external connection line such that the second input pad inputs the input signal to the circuit element. The output portion can be formed on the semiconductor substrate. The output pad can include an output pad to output an output signal from the circuit element.

Abstract: A package on package structure includes a lower package and an upper package. The lower package includes a first semiconductor chip disposed in a chip region of an upper surface of a first substrate. The upper package includes a second semiconductor chip disposed on an upper surface of a second substrate, and a decoupling capacitor disposed in an outer region of a lower surface of the second substrate. The lower surface of the second substrate opposes the upper surface of the second substrate and faces the upper surface of the first substrate. The plane area of the second substrate is larger than the plane area of the first substrate. The outer region of the lower surface of the second substrate extends beyond a periphery of the first substrate.

Abstract: A stacked package structure is provided. The stacked package structure includes a stacked package including a lower semiconductor package, an upper semiconductor package disposed on the lower semiconductor package and spaced a predetermined distance apart from the lower semiconductor package, an inter-package connecting portion electrically connecting the lower semiconductor package and the upper semiconductor package while supporting a space therebetween, and an insulation layer disposed at least outside the inter-package connecting portion and filling the space between the lower semiconductor package and the upper semiconductor package, and an electromagnetic shielding layer surrounding lateral and top surfaces of the stacked package.

Abstract: A semiconductor package and testing method is disclosed. The package includes a substrate having top and bottom surfaces, a semiconductor chip mounted in a centrally located semiconductor chip mounting area of the substrate, and a plurality of test pads disposed on top and bottom surfaces of the substrate and comprising a first group of test pads configured on the top and bottom surfaces of the substrate and having a first height above the respective top and bottom surface of the substrate, and a second group of test pads disposed on the lower surface of the substrate and having a second height greater than the first, wherein each one of the second group of test pads includes a solder ball attached thereto.

Abstract: Example embodiments relate to a semiconductor device. The semiconductor device may include a first semiconductor chip including a semiconductor substrate, a first through via that penetrates the semiconductor substrate, a second semiconductor chip stacked on one plane of the first semiconductor chip, and a shielding layer covering at least one portion of the first and/or second semiconductor chip and electrically connected to the first through via.

Abstract: A circuit board including an embedded decoupling capacitor and a semiconductor package thereof are provided. The circuit board may include a core layer including an embedded decoupling capacitor, a first build-up layer at one side of the core layer, and a second build-up layer at the other side of the core layer, wherein the embedded decoupling capacitor includes a first electrode and a second electrode, the first build-up layer includes a first via contacting the first electrode, and the second build-up layer includes a second via contacting the first electrode.

Abstract: An image display panel assembly includes a flexible printed circuit (FPC), an image display panel, a gate driver integrated circuit (IC) package, and a source driver IC package. The FPC is configured to receive gate and source driving signals. The image display panel is electrically connected to the FPC, and includes a gate driving signal transfer pattern along a first edge of the image display panel, a source driving signal transfer pattern along a second edge adjacent to the first end, and a plurality of pixels. The gate driver integrated circuit (IC) package is configured to receive the gate driving signal through the gate driving signal transfer pattern and provide the gate driving signal to the plurality of pixels. The source driver IC package is configured to receive the source driving signal through the source driving signal transfer pattern and provide the source driving signal to the plurality of pixels.

Abstract: A semiconductor device is disclosed including a through electrode. The semiconductor device may include a first semiconductor chip including a transceiver circuit formed on a first surface, a first coupling conductive pattern which is formed on a second surface opposite the first surface, and a through electrode which connects the transceiver circuit and the first coupling conductive pattern. There may be a transceiver located on a second semiconductor chip and including a second coupling conductive pattern facing the first coupling conductive pattern which communicates wirelessly with the first coupling conductive pattern.

Abstract: A semiconductor package and testing method is disclosed. The package includes a substrate having top and bottom surfaces, a semiconductor chip mounted in a centrally located semiconductor chip mounting area of the substrate, and a plurality of test pads disposed on top and bottom surfaces of the substrate and comprising a first group of test pads configured on the top and bottom surfaces of the substrate and having a first height above the respective top and bottom surface of the substrate, and a second group of test pads disposed on the lower surface of the substrate and having a second height greater than the first, wherein each one of the second group of test pads includes a solder ball attached thereto.