Abstract: An objective having a plurality of optical elements arranged to image a pattern from an object field in an object surface of the objective to an image field in an image surface region of the objective at an image-side numerical aperture NA>0.8 with electromagnetic radiation from a wavelength band around a wavelength ?, includes a number N of dioptric optical elements, each dioptric optical element i made from a transparent material having a normalized optical dispersion ?ni=ni(?0)?ni(?0+1 pm) for a wavelength variation of 1 pm from a wavelength ?0. The objective satisfies the relation ? ? i = 1 N ? ? ? ? n i ? ( s i - d i ) ? ? 0 ? NA 4 ? A for any ray of an axial ray bundle originating from a field point on an optical axis in the object field, where si is a geometrical path length of a ray in an ith dioptric optical element having axial thickness di and the sum extends on all dioptric optical elements of the objective. Where A=0.

Abstract: A projection objective of a microlithographic projection exposure apparatus has a high index refractive optical element (L3) with an index of refraction greater than 1.6. This element (L3) has a volume and a material related optical property which varies over the volume. Variations of this optical property cause an aberration of the objective. In one embodiment at least 4 optical surfaces are provided that are arranged in at least one volume (L3?) which is optically conjugate with the volume of the refractive optical element. Each optical surface comprises at least one correction means, for example a surface deformation or a birefringent layer with locally varying properties, which at least partially corrects the aberration caused by the variation of the optical property.

Abstract: The invention relates to a projection objective (6), in particular for applications in microlithography, serving to project an image of an object (3) arranged in an object plane (4) onto a substrate (18) arranged in an image plane (7). The projection objective (6) has an object-side-oriented part (10) which is arranged adjacent to the object plane (4) and includes a plurality of optical elements, and it also has an image-side-oriented part (11) of the objective which is arranged adjacent to the image plane (7) and includes a free space (16) serving to receive a fluid (13) and further includes at least a part of an optical end-position element (14) serving to delimit the free space (16) towards the object side. The projection objective (6) is operable in different modes of operation in which the free space (16) is filled with fluids (13) that differ in their respective indices of refraction.

Abstract: The disclosure relates to a method of manufacturing a projection objective, and a projection objective, such as a projection objective configured to be used in a microlithographic process. The method can include defining an initial design for the projection objective and optimizing the design using a merit function. The method can be used in the manufacturing of projection objectives which may be used in a microlithographic process of manufacturing miniaturized devices.

Abstract: A method and to an apparatus for structuring a radiation-sensitive material are disclosed. The method can include using a dynamic mask to generate a first radiation pattern in a layer of the radiation-sensitive material, where the first radiation pattern has a thickness that is at most 50% of the thickness of the layer of the radiation-sensitive material. The method can also include using the dynamic mask to generate a second radiation pattern in the layer of the radiation-sensitive material. The dynamic mask can be configured to change its structure dynamically, and the first radiation pattern can be different from the second radiation pattern.

Abstract: Microlithography projection objectives for imaging into an image plane a pattern arranged in an object plane are described with respect to suppressing false light in such projection objectives.

Abstract: The invention features a system for microlithography that includes a mercury light source configured to emit radiation at multiple mercury emission lines, a projection objective positioned to receive radiation emitted by the mercury light source, and a stage configured to position a wafer relative to the projection objective. During operation, the projection objective directs radiation from the light source to the wafer, where the radiation at the wafer includes energy from more than one of the emission lines. Optical lens systems for use in said projection objective comprise four lens groups, each having two lenses comprising silica, the first and second lens groups on one hand and the third and fourth lens groups on the other hand are positioned symmetrically with respect to a plane perpendicular to the optical axis of said lens system.

Abstract: The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

Abstract: In some embodiments, the disclosure provides a projection lens configured to configured to image radiation from an object plane of the projection lens to an image plane of the projection lens. The projection lens can, for example, be used in a microlithographic projection exposure apparatus. The projection lens includes a last lens on the image plane side. The last lens includes at least one intrinsically birefringent material. The material can be, for example, magnesium oxide, a garnet, lithium barium fluoride and/or a spinel. The last lens can have a thickness d which satisfies the condition 0.8*y0, max<d<1.5*y0, max, where y0, max denotes the maximum distance of an object field point from the optical axis.

Abstract: The disclosure relates a projection objective of a microlithographic projection exposure apparatus. In some embodiments, the apparatus is configured to project a mask which can positioned in an object plane onto a light-sensitive layer which can be positioned in an image plane. The projection objective can include a last optical element at the image plane side having a light entrance surface and a light exit surface. The projection objective can also include an immersion liquid is arranged in a region between the light exit surface and the image plane. At a working wavelength of the projection objective, the immersion liquid can have a refractive index of at least 1.5. At least one interface between the light entrance surface of the last optical element at the image plane side and the immersion liquid can have at least region-wise a microstructuring.

Abstract: The invention relates to a method -for improving the imaging properties of a micro lithography projection objective (50), wherein the projection objective has a plurality of lenses (L1, L2, L3, L4, L5, L6, L7, L8) between an object plane and an image plane, a first lens of the plurality of lenses being assigned a first manipulator (ml, Mn) for actively deforming the lens, the first lens being deformed for at least partially correcting an aberration, at least one second lens of the plurality of lenses furthermore being assigned at least one second manipulator, and the second lens being deformed in addition to the first lens. Furthermore, a method is described for selecting at least one lens of a plurality of lenses of a projection objective as actively deformable element, and a projection objective.

Abstract: The disclosure relates to a microlithographic projection exposure apparatus, such as are used for the production of large-scale integrated electrical circuits and other microstructured components. The disclosure relates in particular to coatings of optical elements in order to increase or reduce the reflectivity.

Abstract: A projection objective of a microlithographic projection exposure apparatus is disclosed. The projection objective can project an image of a mask that can be set in position in an object plane onto a light-sensitive coating layer that can be set in position in an image plane. The projection objective can be designed to operate in an immersion mode, and it can produce at least one intermediate image. The projection objective can include an optical subsystem on the image-plane side which projects the intermediate image into the image plane with an image-plane-side projection ratio having an absolute value of at least 0.3.

Abstract: The invention relates to a projection objective (6), in particular for applications in microlithography, serving to project an image of an object (3) arranged in an object plane (4) onto a substrate (18) arranged in an image plane (7). The projection objective (6) has an object-side-oriented part (10) which is arranged adjacent to the object plane (4) and includes a plurality of optical elements, and it also has an image-side-oriented part (11) of the objective which is arranged adjacent to the image plane (7) and includes a free space (16) serving to receive a fluid (13) and further includes at least a part of an optical end-position element (14) serving to delimit the free space (16) towards the object side. The projection objective (6) is operable in different modes of operation in which the free space (16) is filled with fluids (13) that differ in their respective indices of refraction.

Abstract: In some embodiments, the disclosure provides an optical system, in particular an illumination system or a projection lens of a microlithographic exposure system, having an optical system axis and at least one element group including three birefringent elements each of which includes optically uniaxial material and having an aspheric surface, wherein a first birefringent element of the group has a first orientation of its optical crystal axis, a second birefringent element of the group has a second orientation of its optical crystal axis, wherein the second orientation can be described as emerging from a rotation of the first orientation, the rotation not corresponding to a rotation around the optical system axis by an angle of 90° or an integer multiple thereof, and a third birefringent element of the group has a third orientation of its optical crystal axis, wherein the third orientation can be described as emerging from a rotation of the second orientation, the rotation not corresponding to a rotation aroun

Abstract: An illumination system (12) of a microlithographic exposure apparatus (10) comprises a condenser (601; 602; 603; 604; 605; 606) for transforming a pupil plane (54) into a field plane (62). The condenser has a lens group (L14, L15, L16, L17; L24, L25, L26, L27, L28; L34, L35, L36, L37; L44, L45, L46; L53, L54, L55) that contains a plurality of consecutive lenses. These lenses are arranged such that a light bundle (70) focused by the condenser (601; 602; 603; 604; 605) on an on-axis field point (72) converges within each lens of the lens group. At least one lens (L15, L16, L17; L25, L26; L34, L44, L45; L54) of the lens group has a concave surface. The illumination system may further comprise a field stop objective (66; 666, 666?) that at least partly corrects a residual pupil aberration of the condenser (601; 602; 603; 604; 605; 606).

Abstract: In some embodiments, a projection objective for lithography includes an optical arrangement of optical elements between an object plane and an image plane. The arrangement generally has at least one intermediate image plane, the arrangement further having at least two correction elements for correcting aberrations, of which a first correction element is arranged optically at least in the vicinity of a pupil plane and a second correction element is arranged in a region which is not optically near either a pupil plane or a field plane.

Abstract: Projection exposure methods and systems for exposing substrates are disclosed. The methods and systems feature projection objectives capable of multiple exposure configurations having different image side numerical apertures and different image field sizes.

Abstract: A method of manufacturing an optical element (5) comprises testing an optical surface (3) of the optical element, using an interferometer 1a directing measuring light (23a) onto the optical surface wherein the measuring light traverses two successive holograms (44, 48) disposed in the beam path of the measuring light upstream of the optical surface.

Abstract: A projection exposure apparatus for the exposure of a radiation-sensitive substrate arranged in the region of an image surface of a projection objective with at least one image of a pattern of a mask that is arranged in the region of an object surface of the projection objective has a light source for emitting ultraviolet light from a wavelength band having a bandwidth ??>10 pm around a central operating wavelength ?>200 nm; an illumination system for receiving the light from the light source and for directing illumination radiation onto the pattern of the mask; and a projection objective for the imaging of the structure of the mask onto a light-sensitive substrate.