Abstract: An objective having a plurality of optical elements arranged to image a pattern from an object field to an image field at an image-side numerical aperture NA>0.8 with electromagnetic radiation from a wavelength band around a wavelength ? includes a number N of dioptric optical elements, each dioptric optical element i made from a transparent material having a normalized optical dispersion ?ni=ni(?0)?ni(?0+1 pm) for a wavelength variation of 1 pm from a wavelength ?0. The objective satisfies the relation ? ? i = 1 N ? ? ? ? n i ? ( s i - d i ) ? ? 0 ? NA 4 ? A for any ray of an axial ray bundle originating from a field point on an optical axis in the object field, where si is a geometrical path length of a ray in an ith dioptric optical element having axial thickness di and the sum extends on all dioptric optical elements of the objective. Where A=0.2 or below, spherochromatism is sufficiently corrected.

Abstract: The disclosure relates to a microlithographic projection exposure apparatus, such as are used for the production of large-scale integrated electrical circuits and other microstructured components. The disclosure relates in particular to coatings of optical elements in order to increase or reduce the reflectivity.

Abstract: A device including an imaging optical unit (9) imaging an object field (5) in an image field (10), a structured mask (7), arranged in the region of the object field (5) via reticle holder (8) displaceable in a reticle scanning direction (21), and a sensor apparatus (25), arranged in the region of the image field (10) via a substrate holder (13) displaceable in a substrate scanning direction (22). The mask (7) has at least one measurement structure (27; 33) to be imaged on the sensor apparatus (25), wherein the sensor apparatus (25) includes at least one sensor row (28) with a multiplicity of sensor elements (29), and affords the possibility of testing the imaging optical unit (9) during the displacement of the substrate holder (13) for exposing a substrate (12) arranged on the substrate holder.

Abstract: The disclosure relates to a microlithographic projection exposure apparatus, such as are used for the production of large-scale integrated electrical circuits and other microstructured components. The disclosure relates in particular to coatings of optical elements in order to increase or reduce the reflectivity.

Abstract: Microlithography projection objectives for imaging into an image plane a pattern arranged in an object plane are described with respect to suppressing false light in such projection objectives.

Abstract: A mirror for EUV radiation comprises a total reflection surface, which has a first EUV-radiation-reflecting region and at least one second EUV-radiation-reflecting region, wherein the EUV-radiation-reflecting regions are structurally delimited from one another, wherein the first region comprises at least one first partial reflection surface which is surrounded along a circumference in each case by the at least one second region, and wherein the at least one second EUV-radiation-reflecting region comprises at least one second partial reflection surface which is embodied in a path-connected fashion and which is embodied in a continuous fashion.

Abstract: A projection lens for imaging a pattern arranged in an object plane of the projection lens into an image plane of the projection lens via electromagnetic radiation having an operating wavelength ?<260 nm has a multiplicity of optical elements having optical surfaces which are arranged in a projection beam path between the object plane and the image plane. Provision is made of a wavefront manipulation system for dynamically influencing the wavefront of the projection radiation passing from the object plane to the image plane.

Abstract: The invention relates to a method for improving the imaging properties of a micro lithography projection objective, wherein the projection objective has a plurality of lenses between an object plane and an image plane, a first lens of the plurality of lenses being assigned a first manipulator for actively deforming the lens, the first lens being deformed for at least partially correcting an aberration, at least one second lens of the plurality of lenses furthermore being assigned at least one second manipulator, and the second lens being deformed in addition to the first lens. Furthermore, a method is described for selecting at least one lens of a plurality of lenses of a projection objective as actively deformable element, and a projection objective.

Abstract: A device including an imaging optical unit (9) imaging an object field (5) in an image field (10), a structured mask (7), arranged in the region of the object field (5) via reticle holder (8) displaceable in a reticle scanning direction (21), and a sensor apparatus (25), arranged in the region of the image field (10) via a substrate holder (13) displaceable in a substrate scanning direction (22). The mask (7) has at least one measurement structure (27; 33) to be imaged on the sensor apparatus (25), wherein the sensor apparatus (25) includes at least one line sensor (28) with a multiplicity of sensor elements (29), and affords the possibility of testing the imaging optical unit (9) during the displacement of the substrate holder (13) for exposing a substrate (12) arranged on the substrate holder.

Abstract: The disclosure relates to a method of manufacturing a projection objective, and a projection objective, such as a projection objective configured to be used in a microlithographic process. The method can include defining an initial design for the projection objective and optimizing the design using a merit function. The method can be used in the manufacturing of projection objectives which may be used in a microlithographic process of manufacturing miniaturized devices.

Abstract: A projection lens for imaging a pattern arranged in an object plane of the projection lens into an image plane of the projection lens via electromagnetic radiation having an operating wavelength ?<260 nm has a multiplicity of optical elements having optical surfaces which are arranged in a projection beam path between the object plane (OS) and the image plane. Provision is made of a wavefront manipulation system for dynamically influencing the wavefront of the projection radiation passing from the object plane to the image plane.

Abstract: The disclosure relates to a projection exposure apparatus for EUV microlithography which includes an illumination system for illuminating a pattern, and a projection objective for imaging the pattern onto a light-sensitive substrate. The projection objective has a pupil plane with an obscuration. The illumination system generates light with an angular distribution having an illumination pole which extends over a range of polar angles and a range of azimuth angles and within which the light intensity is greater than an illumination pole minimum value. From the illumination pole toward large polar angles a dark zone is excluded within which the light intensity is less than the illumination pole minimum value, and which has in regions a form corresponding to the form of the obscuration of the pupil plane.

Abstract: A projection lens for imaging a pattern arranged in an object plane of the projection lens into an image plane of the projection lens via electromagnetic radiation having an operating wavelength ?<260 nm has a multiplicity of optical elements having optical surfaces which are arranged in a projection beam path between the object plane and the image plane. Provision is made of a wavefront manipulation system for dynamically influencing the wavefront of the projection radiation passing from the object plane to the image plane.

Abstract: A microlithographic projection exposure apparatus comprises a projection objective which images an object onto an image plane and has a lens with a curved surface. In the projection objective there is a liquid or solid medium which directly adjoins the curved surface over a region which is usable for imaging the object. The projection exposure apparatus also has an adjustable manipulator for reducing an image field curvature which is caused by heating of the medium during the projection operation.

Abstract: The invention relates to a method for improving the imaging properties of a micro lithography projection objective, wherein the projection objective has a plurality of lenses between an object plane and an image plane, a first lens of the plurality of lenses being assigned a first manipulator for actively deforming the lens, the first lens being deformed for at least partially correcting an aberration, at least one second lens of the plurality of lenses furthermore being assigned at least one second manipulator, and the second lens being deformed in addition to the first lens. Furthermore, a method is described for selecting at least one lens of a plurality of lenses of a projection objective as actively deformable element, and a projection objective.

Abstract: The disclosure relates to an optical arrangement for three-dimensionally patterning a radiation-sensitive material layer, such as a projection exposure apparatus for microlithography. The optical arrangement includes a mask for forming a three-dimensional radiation pattern, a substrate with the radiation-sensitive material layer, and a projection optical unit for imaging the three-dimensional radiation pattern from the mask into the radiation-sensitive material layer. The optical arrangement is designed to compensate for spherical aberrations along the thickness direction of the radiation-sensitive material layer in order to generate a stigmatic image of the three-dimensional radiation pattern.

Abstract: The present invention relates to an optical imaging device, in particular for microscopy, with a first optical element group and a second optical element group, wherein the first optical element group and the second optical element group, on an image plane, form an image of an object point of an object plane. The first optical element group includes a first optical element with a reflective first optical surface and a second optical element with a reflective second optical surface. The second optical element group includes a third optical element with a reflective third optical surface. The first optical element and the second optical element are formed and arranged such that on formation of the image of the object point, in each case a multiple reflection of at least one imaging beam takes place on the first optical surface and the second optical surface.

Abstract: Microlithography projection objectives for imaging into an image plane a pattern arranged in an object plane are described with respect to suppressing false light in such projection objectives.

Abstract: The invention relates to a method for improving the imaging properties of a micro lithography projection objective, wherein the projection objective has a plurality of lenses between an object plane and an image plane, a first lens of the plurality of lenses being assigned a first manipulator (ml, Mn) for actively deforming the lens, the first lens being deformed for at least partially correcting an aberration, at least one second lens of the plurality of lenses furthermore being assigned at least one second manipulator, and the second lens being deformed in addition to the first lens. Furthermore, a method is described for selecting at least one lens of a plurality of lenses of a projection objective as actively deformable element, and a projection objective.

Abstract: The disclosure relates to an optical arrangement for three-dimensionally patterning a radiation-sensitive material layer, such as a projection exposure apparatus for microlithography. The optical arrangement includes a mask for forming a three-dimensional radiation pattern, a substrate with the radiation-sensitive material layer, and a projection optical unit for imaging the three-dimensional radiation pattern from the mask into the radiation-sensitive material layer. The optical arrangement is designed to compensate for spherical aberrations along the thickness direction of the radiation-sensitive material layer in order to generate a stigmatic image of the three-dimensional radiation pattern.