Abstract: A leadframe is formed by chemically half-etching a sheet of conductive material. The half-etching exposes a first side surface of a first contact of the leadframe. A solder wettable layer is plated over the first side surface of the first contact. An encapsulant is deposited over the leadframe after plating the solder wettable layer.

Abstract: A leadframe is formed by chemically half-etching a sheet of conductive material. The half-etching exposes a first side surface of a first contact of the leadframe. A solder wettable layer is plated over the first side surface of the first contact. An encapsulant is deposited over the leadframe after plating the solder wettable layer.

Abstract: A semiconductor device has a substrate panel with a substrate having a first substrate area and a second substrate area outside a footprint of the first substrate area. A plurality of semiconductor die or discrete IPDs is disposed over the first substrate area. Substrate area 102a has electrical interconnect for the semiconductor die. A molding compound is disposed over the semiconductor die and first substrate area using a transfer mold process, which leaves mold culls and mold gates disposed over the second substrate area. A substrate edge is formed in the second substrate area under the mold gates. The substrate edge extends into the first substrate area under the molding compound to reinforce the mold gates and reduce cracking during mold degating. The substrate edge can have a variety of forms such as parallel bars, diagonal bars, orthogonal bars, and combinations thereof.

Abstract: A semiconductor device has a substrate panel with a substrate having a first substrate area and a second substrate area outside a footprint of the first substrate area. A plurality of semiconductor die or discrete IPDs is disposed over the first substrate area. Substrate area 102a has electrical interconnect for the semiconductor die. A molding compound is disposed over the semiconductor die and first substrate area using a transfer mold process, which leaves mold culls and mold gates disposed over the second substrate area. A substrate edge is formed in the second substrate area under the mold gates. The substrate edge extends into the first substrate area under the molding compound to reinforce the mold gates and reduce cracking during mold degating. The substrate edge can have a variety of forms such as parallel bars, diagonal bars, orthogonal bars, and combinations thereof.

Abstract: A leadframe is formed by chemically half-etching a sheet of conductive material. The half-etching exposes a first side surface of a first contact of the leadframe. A solder wettable layer is plated over the first side surface of the first contact. An encapsulant is deposited over the leadframe after plating the solder wettable layer.

Abstract: A leadframe is formed by chemically half-etching a sheet of conductive material. The half-etching exposes a first side surface of a first contact of the leadframe. A solder wettable layer is plated over the first side surface of the first contact. An encapsulant is deposited over the leadframe after plating the solder wettable layer.

Abstract: A leadframe is formed by chemically half-etching a sheet of conductive material. The half-etching exposes a first side surface of a first contact of the leadframe. A solder wettable layer is plated over the first side surface of the first contact. An encapsulant is deposited over the leadframe after plating the solder wettable layer.

Abstract: A method of manufacture of an integrated circuit package system includes: attaching a first die to a first die pad; connecting electrically a second die to the first die through a die interconnect positioned between the first die and the second die; connecting a first lead adjacent the first die pad to the first die; connecting a second lead to the second die, the second lead opposing the first lead and adjacent the second die; and providing a molding material around the first die, the second die, the die interconnect, the first lead and the second lead, with a portion of the first lead exposed.

Abstract: An integrated circuit packaging system and method of manufacture thereof including: providing a pre-plated leadframe having a contact protrusion and a protective pad on the contact protrusion; forming a contact pad and traces by etching the pre-plated leadframe; applying a trace protection layer on the contact pad, the traces, and the protective pad; removing the protective pad and a portion of the trace protection layer for exposing the contact pad; and depositing an external connector directly on a surface of the contact pad.

Abstract: An integrated circuit packaging system and method of manufacture thereof includes: an L-plated lead; a die conductively connected to the L-plated lead; and an encapsulant encapsulating the L-plated lead and the die.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a leadframe having an upper structure, upper protrusions, and a base side facing away from the upper structure and the upper protrusions; forming tie bars in the leadframe with an opening surrounding the upper structure, the tie bars connected to the upper structure and exposed on the base side; connecting an integrated circuit to the upper protrusions; applying an encapsulant over the integrated circuit, over the upper structure, and in the opening with the base side exposed; removing the tie bars exposing a first surface and a second surface of the encapsulant below the first surface, and forming a die paddle from the upper structure and exposed from the second surface; and removing the leadframe from the base side forming island terminals from the upper protrusions exposed from the second surface and isolated from the die paddle.

Abstract: An integrated circuit package system includes: mounting an integrated circuit die adjacent to a lead; forming a first encapsulation around and exposing the integrated circuit die and the lead; and forming a planar interconnect between the integrated circuit die and the lead with the planar interconnect on the first encapsulation.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a lead; placing an integrated circuit device, having an external connector, adjacent to and electrically isolated from the lead; mounting an integrated circuit over the lead and the integrated circuit device with the integrated circuit electrically isolated from the integrated circuit device; and forming a package encapsulation, having an encapsulation base, over the lead, the integrated circuit, and the integrated circuit device with the lead and the external connector exposed from the encapsulation base.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a package paddle; forming a lead adjacent to the package paddle; depositing a lead conductive cap on the lead, the lead conductive cap includes a nickel layer having a thickness between 2.55 ?m to 8.00 ?m deposited on the lead, a palladium layer deposited on the nickel layer, and a gold layer deposited on the palladium layer; mounting an integrated circuit over the package paddle; attaching an electrical connector between the lead conductive cap and the integrated circuit; and forming an encapsulation over the integrated circuit, a portion of the lead, and a portion of the package paddle.

Abstract: An integrated circuit package system including: providing a die pad with a top, sides, and a bottom, the bottom having a relief with a flat surface and defining a wall and a center pad; mounting a barrier under the bottom of the die pad; mounting an integrated circuit die on the top of the die pad; encapsulating the integrated circuit die and the top and sides of the die pad with the wall preventing encapsulation from flowing along the barrier to reach the center pad; and mounting an external interconnect on the center pad.

Abstract: An integrated circuit package system includes: forming an array of external interconnects with an intersecting region between the external interconnects; removing the intersecting region for forming an isolation hole between the external interconnects; mounting an integrated circuit die over the external interconnects; connecting an internal interconnect between the integrated circuit die and the external interconnects; and forming a package encapsulation over the integrated circuit die with the external interconnects partially exposed.

Abstract: An integrated circuit package system includes: interconnection pads; a first device mounted below the interconnection pads; a bond wire, or a solder ball connecting the first device to the interconnection pads; a lead connected to the interconnection pad or to the first device; an encapsulation having a top surface encapsulating the first device; and a recess in the top surface of the encapsulation with the interconnection pads exposed therefrom.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a package paddle group having a first package paddle electrically isolated from a second package paddle; attaching an integrated circuit device on the first package paddle and the second package paddle; forming a standoff terminal adjacent the package paddle group and electrically connected to the integrated circuit device; connecting a paddle connector to the integrated circuit device and the first package paddle and another paddle connector to the integrated circuit device and the second package paddle; and forming an encapsulation over the integrated circuit device, the first package paddle, the second package paddle, and the standoff terminal, the encapsulation exposing a portion of the first package paddle, the second package paddle, and the standoff terminal.

Abstract: An integrated circuit package system is provided including connecting an integrated circuit die with an external interconnect, forming a first encapsulation having a device cavity with the integrated circuit die therein, mounting a device in the device cavity over the integrated circuit die, and forming a cover over the device and the first encapsulation.

Abstract: A PiP semiconductor device has an inner known good semiconductor package. In the semiconductor package, a first via is formed in a temporary carrier. A first conductive layer is formed over the carrier and into the first via. The first conductive layer in the first via forms a conductive bump. A first semiconductor die is mounted to the first conductive layer. A first encapsulant is deposited over the first die and carrier. The semiconductor package is mounted to a substrate. A second semiconductor die is mounted to the first conductive layer opposite the first die. A second encapsulant is deposited over the second die and semiconductor package. A second via is formed in the second encapsulant to expose the conductive bump. A second conductive layer is formed over the second encapsulant and into the second via. The second conductive layer is electrically connected to the second die.