Abstract: Interface parameters for a plurality of semiconductor devices, particularly parameters for output drivers (i.e. on chip driver) and terminations (i.e. on die termination) for double data rate dynamic random access memories, are aligned using a calibration reference which is common to the semiconductor devices and is connected to calibration connections on the semiconductor devices. The semiconductor devices are calibrated in succession, in each case individually, and the calibration connection on the respective semiconductor device which is currently performing calibration is connected to an internal calibration unit by an internal switching unit in the process, and the calibration connections on all other semiconductor devices are terminated to a high impedance internally.

Abstract: Contact elements of a plug-in mount are connected in an electrically conducting manner to conductive contact zones on a surface of a substrate after the plug-in mount has been loaded with a switching assembly and are electrically isolated from the signal lines in the unloaded state. Therefore, higher clock rates for the signals transmitted on the signal lines are made possible in not completely expanded systems having empty mounting locations.

Abstract: A zero insertion force mount for fixing and making contact with circuit subassemblies on a substrate has a plurality of holding devices for holding the circuit subassemblies and a zero insertion force device (ZIF mechanism), in a stressed state of the zero insertion force device. The circuit subassemblies are disposed in the holding devices being fixed by a pressing force exerted via the contact elements.

Abstract: The invention relates to a semiconductor memory module having a plurality of memory chips and at least one buffer chip, which drives clock signals and command and address signals to the memory chips and also drives data signals to, and receives them from, the memory chips via a module-internal clock, address, command and data signal bus. The buffer chip forms an interface to an external memory main bus and the memory chips are arranged in at least one row.

Abstract: A semiconductor memory module includes a wiring board in or on which at least a number of data line runs are conducted in a respective width of k bits and which exhibits a number of memory ranks which in each case have n memory chips, and at least one signal driver/control chip (hub), a k-bit-wide data line run in each case connecting a memory chip from each memory rank to the signal driver/control chip (hub) and four or eight memory ranks in each case being arranged distributed on the top and bottom of the wiring board along the associated data line run in such a manner that, in operation, the load is distributed along the respective data line run.

Abstract: A memory system is functionally designed so that, despite operation without an error correction device, memory chips of a memory module that are actually provided for error correction are concomitantly used for the data transfer. A control device is configured to receive, store and transfer data packets to and from a first and second set of memory chips. Transfer of an internal packet data from the control device to memory takes place such that a first record is stored in a second set of memory chips and additional records are stored in the first set of memory chips. In preferred embodiments, data is allocated in the second set of memory chips such that at least one additional transfer step takes place to the second set of memory chips compared with transfers to the first set of memory chips. In the additional transfer step(s), the first set of memory chips is masked from receiving data.

Abstract: The invention relates to a semiconductor memory module having a plurality of memory chips arranged in at least one row and at least one buffer chip which drives and receives clock signals and command and address signals to the memory chips and data signals to and from the memory chips via a clock, address, command and data bus inside the module and which forms an interface to an external primary memory bus. The semiconductor memory module has an even number of buffer chips arranged on it and all of the memory chips are connected to two respective buffer chips at least by one signal line type from a signal group and just to one of the two buffer chips by the remaining signal lines from the group.

Abstract: The present invention relates to a memory arrangement having a controller and having at least one memory device. Data signals, control signals and address signals can be transferred between the controller and the memory device. The memory arrangement is designed in such a way that the data signals can be transferred via data signal lines between the controller and the memory device. The memory arrangement is furthermore designed in such a way that the control signals and the address signals can likewise be transferred via the data signal lines between the controller and the memory device.

Abstract: The invention relates to a semiconductor memory module having a plurality of memory chips arranged next to one another in a row. The memory module has a module-internal clock, command/address and data bus which transfers clock signal, command and address signals and also data signals from a memory controller device to the memory chips and data signals from the memory chips to the memory controller device. The memory module has respective clock, command/address and data signal lines. The clock signal lines comprise two differential clock signal lines which, at their end opposite to the memory controller device are either open or connected to one another by a short-circuiting bridge. The memory chips, during a write operation, synchronize the write data with the clock signal running from the memory controller device to the end of the clock signal line and, during a read operation, output the read data synchronously with the clock signal reflected from the open or short-circuited end of the clock signal lines.

Abstract: The invention relates to a semiconductor memory module having at least one memory chip and a buffer chip, which drives clock, address and command signals to the memory chip and drives data signals to, and receives them from, the memory chip via a module-internal clock, address, command and data bus. The buffer chip forms an interface to an external memory main bus. The data bus lines and/or the clock, command and address bus lines are respectively connected to the buffer chip at their two ends and are capable of being driven by the buffer chip from these two ends. Control means are being provided and set up in such a manner that they respectively match the directions of propagation of the data signals and of the clock, command and address signals on the corresponding bus lines during writing and reading.

Abstract: A connector is described for fixing a plurality of switching assemblies on a substrate. The connector is also for making contact with the plurality of switching assemblies, which have compatible interfaces. The connector has a plurality of receptacle devices with contact elements and internal contact connections between corresponding contact elements, as a result of which, the length of the connections between the switching assemblies is reduced, signal propagation times are shortened and a higher clock rate for operating the switching assemblies is made possible.

Abstract: An input receiver circuit is provided for receiving a noisy high-speed input signal and for generating a plurality of output signals that can be processed at a low acquisition speed compared to the speed of the high-speed input signal. The input receiver circuit includes an input for receiving the high-speed input signal (data), a plurality of integration elements and a switch for connecting the input to one of the plurality of integration elements for integrating the high-speed input signal. The input receiver circuit further includes a plurality of means for receiving one of the integrated high-speed input signals at a time and for outputting one of the plurality of output signals at a time, and a controller for controlling the switch.

Abstract: A buffer chip for actuating one or more memory arrangements, having a first data interface for receiving a data item which is to be written and for sending a data item which has been read, having a conversion unit for parallelizing the received data item and for serializing the data item which is to be sent, having a second data interface for writing the parallelized data item to the memory arrangement via a memory data bus and for receiving the data item read from the memory arrangement via the memory data bus; having a write buffer storage for buffer-storing the data item which is to be written, having a control unit in order, after reception of a data item which is to be written via the first data interface in line with a write command, to interrupt the data from being written from the write buffer storage via the second data interface upon a subsequent read command, in order to read the requested data into the buffer chip via the second data interface.

Abstract: A memory device has a memory module, a controller, a data bus for connecting the controller and the memory module, a read clock generator, and a read clock bus for connecting the read clock generator, the memory module, and the Controller. The data bus read data from the memory module or writes data into the memory module. The read clock generator is disposed in the memory module, so that the data bus and the read clock bus are substantially symmetric, and generate a read clock for transferring data from the memory module to the controller. The data bus and the read clock bus are configured with respect to each other such that substantially no time delay between read data on the data bus and the read clock on the read clock bus exists at the controller.

Abstract: Memory modules based on DDR-DRAMs are provided with a buffer and error checking module, which integrates an error data memory and a buffer/redriver functionality for conditioning data signals that are transferred to the memory module and output from the memory module and is suitable for the correction of useful data stored erroneously in the DDR-DRAMs. The buffer and error checking module enables the integration of both error correction and buffer/redriver functionality on memory modules within the restricted memory module dimensions in accordance with definitive industry standards, simplified or improved routing of data lines and of control and address lines and also, by virtue of a reduction of erroneously transferred data to the data memory system, an increased real data transfer rate.

Abstract: The invention relates to an electronic assembly having a non-volatile memory device with a controllable write protection feature and a switching configuration for generating a write protection signal from potentials at the supply terminals of the electronic assembly.

Abstract: In a memory module for a memory configuration having a bus system made up of a plurality of signal lines, each signal line has respectively been produced essentially without any stub continuously from a supplying contact device to a discharging contact device, disposed close to the supplying contact device, in order to increase a maximum data transmission rate within the memory configuration. Between the supplying contact device and the discharging contact device, each of the signal lines is routed in succession at minimum distances via connection elements associated with the signal line on memory chips associated with the signal line.

Abstract: Interface parameters for a plurality of semiconductor devices, particularly parameters for output drivers (i.e. on chip driver) and terminations (i.e. on die termination) for double data rate dynamic random access memories, are aligned using a calibration reference which is common to the semiconductor devices and is connected to calibration connections on the semiconductor devices. The semiconductor devices are calibrated in succession, in each case individually, and the calibration connection on the respective semiconductor device which is currently performing calibration is connected to an internal calibration unit by an internal switching unit in the process, and the calibration connections on all other semiconductor devices are terminated to a high impedance internally.

Abstract: In a configuration for data transmission in a semiconductor memory system, in which data are transmitted between at least one semiconductor memory module and a memory controller controlled by a system clock signal, additional sense clock signal lines are led between the memory controller and the memory modules and, via loops on the memory modules, are led back directly from the memory modules to the memory controller component. By transmitting a sense clock signal from the memory controller to each of the memory modules via the additional sense clock signal lines, the memory controller is able to measure the respective signal propagation time of the sense clock signal and adjust a delay time for the data signals respectively received from the memory modules appropriately. The use of a data strobe signal and the associated disadvantages when testing the memory system or the memory modules is rendered superfluous.

Abstract: Contact elements of a plug-in mount are connected in an electrically conducting manner to conductive contact zones on a surface of a substrate after the plug-in mount has been loaded with a switching assembly and are electrically isolated from the signal lines in the unloaded state. Therefore, higher clock rates for the signals transmitted on the signal lines are made possible in not completely expanded systems having empty mounting locations.