Patents by Inventor Hideaki Yamasaki

Hideaki Yamasaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240411250
    Abstract: A sliding member having a sliding surface configured to include a heat-resistant thermoplastic resin other than a fluororesin, and resin particles having a siloxane group other than the heat-resistant thermoplastic resin, in which an average particle diameter of the resin particles is 0.1 ?m or more and 10 ?m or less, a surface roughness Rsk of the sliding surface is 1.0 or less, and a surface exposure rate of the resin particles on the sliding surface is 2% or more.
    Type: Application
    Filed: March 21, 2024
    Publication date: December 12, 2024
    Applicant: FUJIFILM Business Innovation Corp.
    Inventors: Hideaki OHARA, Kenji OMORI, Junko YAMASAKI, Ryohei YOSHIKAWA
  • Publication number: 20240379377
    Abstract: A substrate processing method includes: by supplying a first metal halide gas including a first metal to a substrate in which an insulator layer is deposited on a silicon layer and a recess portion is formed in the insulator layer, forming a metal layer of the first metal included in the first metal halide gas on a surface of the silicon layer exposed in the recess portion; and subsequently, by supplying a second metal halide gas, which includes a second metal different from the first metal and reacts with the first metal, to the substrate in which the silicon of the silicon layer is diffused to the metal layer to form a metal silicide layer, removing the first metal adhering to a side wall surface of the recess portion.
    Type: Application
    Filed: April 29, 2024
    Publication date: November 14, 2024
    Inventors: Tadahiro ISHIZAKA, Shinya OKABE, Hideaki YAMASAKI
  • Patent number: 11984319
    Abstract: There is provided a method of processing a substrate, the method including: providing the substrate on which a natural oxide film is formed; performing a pre-processing on the substrate such that the natural oxide film formed on the substrate is removed; and directly forming a tungsten film on the substrate by heating a stage on which the substrate is mounted to a predetermined temperature and supplying a tungsten chloride gas and a reduction gas to the substrate which has been subjected to the pre-processing.
    Type: Grant
    Filed: February 6, 2020
    Date of Patent: May 14, 2024
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kensaku Narushima, Nagayasu Hiramatsu, Takanobu Hotta, Atsushi Matsumoto, Masato Araki, Hideaki Yamasaki
  • Patent number: 11718910
    Abstract: A method of pre-coating an inner surface of a chamber, which includes a surface of a substrate-supporting support base installed in an internal space in the chamber, includes: forming a first film on the inner surface by supplying a first gas; forming a second film on the first film by supplying a second gas; and forming a third film on the second film by supplying a third gas, wherein a flow rate ratio of a hydrogen-containing gas to a metal source gas in the first gas is set to be higher than flow rate ratios of the hydrogen-containing gas to the metal source gas in the second gas and the third gas, and wherein the flow rate of the metal source gas in the first gas is set to be lower than the flow rates of the metal source gas in the second gas and the third gas.
    Type: Grant
    Filed: January 11, 2019
    Date of Patent: August 8, 2023
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Takeshi Itatani, Hideaki Yamasaki
  • Publication number: 20230227976
    Abstract: There is provided a film forming method for forming a tungsten film, comprising: preparing a substrate; and forming a tungsten film on the substrate. A chlorine-containing tungsten film whose film stress is adjusted by chlorine concentration in the film is formed as at least a part of the tungsten film.
    Type: Application
    Filed: January 12, 2023
    Publication date: July 20, 2023
    Inventors: Takuya KAWAGUCHI, Takanobu HOTTA, Hideaki YAMASAKI
  • Publication number: 20230227969
    Abstract: There is provided a stress reducing method comprising: preparing a film forming apparatus configured to form a tungsten film on a substrate in a chamber by supplying a tungsten raw material gas and a reducing gas into the chamber; and making at least a part of a tungsten film deposited on an in-chamber component into a chlorine-containing tungsten film whose film stress is reduced by adjusting a chlorine concentration, when performing precoating in the chamber and/or when forming the tungsten film on the substrate, using the tungsten raw material gas and the reducing gas.
    Type: Application
    Filed: January 12, 2023
    Publication date: July 20, 2023
    Inventors: Takuya KAWAGUCHI, Takanobu HOTTA, Hideaki YAMASAKI
  • Publication number: 20230124029
    Abstract: A particle suppression method includes a) supplying a first processing gas containing a halogen element and a metal element into a chamber in which a substrate is accommodated and plasmatizing the first processing gas to form a film containing the metal element on the substrate, b) reducing a surface of a deposit formed on an inner wall of the chamber by supplying a second processing gas including hydrogen gas into the chamber and turning the second processing gas into plasma, and c) nitriding the reduced surface of the deposit by supplying a third processing gas containing a nitrogen element into the chamber.
    Type: Application
    Filed: October 6, 2022
    Publication date: April 20, 2023
    Inventors: Kazuki DEMPOH, Daeho KIM, Atsushi MATSUMOTO, Hideaki YAMASAKI
  • Publication number: 20230062123
    Abstract: An apparatus for forming a film on a substrate includes: a processing container in which a reaction gas is supplied to a surface of the substrate; a stage installed in the processing container, configured to place the substrate and including a heater; a lifting shaft connected to an external lifting mechanism via a through port formed in the processing container; a casing installed between the processing container and the lifting mechanism and covering the lifting shaft; a lid member disposed to surround the lifting shaft with a gap interposed between the lifting shaft and the lid member, and installed in the processing container; a purge gas supplier configured to supply a purge gas into the casing; and a guide member disposed at a position facing the gap that opens toward an interior of the processing container and including a guide surface configured to guide the purge gas.
    Type: Application
    Filed: August 26, 2022
    Publication date: March 2, 2023
    Inventors: Toshio TAKAGI, Takuya KAWAGUCHI, Takanobu HOTTA, Hideaki YAMASAKI, Takaya YAMAUCHI
  • Publication number: 20220396875
    Abstract: A showerhead includes a shower plate, a base member in which a gas flow passage is provided, the base member fixing the shower plate, a plurality of gas supply members disposed in a gas diffusion space and connected to the gas flow passage, the gas diffusion space being formed between the shower plate and the base member, and a flow adjusting plate disposed in the gas diffusion space, the flow adjusting plate being disposed on an outer periphery on an outer side from the plurality of gas supply members.
    Type: Application
    Filed: June 2, 2022
    Publication date: December 15, 2022
    Inventors: Takanobu HOTTA, Takuya KAWAGUCHI, Hideaki YAMASAKI, Toshio TAKAGI, Takashi KAKEGAWA
  • Publication number: 20220396876
    Abstract: A showerhead includes a shower plate and a base member including a gas flow path, the base member fixing the shower plate. The showerhead includes gas supply members disposed at a gas diffusion space, the gas diffusion space being provided between the shower plate and the base member, the gas supply members being connected to the gas flow path, each of the gas supply members including outlets via which gas is radially discharged, and the gas supply members being arranged such that the gas discharged via the outlets of the gas supply members generates a rotational flow.
    Type: Application
    Filed: June 2, 2022
    Publication date: December 15, 2022
    Inventors: Takuya KAWAGUCHI, Takanobu HOTTA, Kensaku NARUSHIMA, Hideaki YAMASAKI, Takashi KAKEGAWA, Toshio TAKAGI, Takaya YAMAUCHI
  • Patent number: 11414742
    Abstract: There is provided a substrate processing apparatus which includes: a substrate mounting table installed in a vacuum vessel; a gas supply part configured to supply a processing gas into the vacuum vessel; a vacuum-exhausting part configured to exhaust the interior of the vacuum vessel; an elevating member configured to lift up and down a substrate while holding the substrate mounted on the mounting table; and a control part configured to output a control signal to execute a first step of supplying the processing gas onto the substrate and setting an internal pressure of the vacuum vessel to a first pressure, a second step of changing the internal pressure to a second pressure lower than the first pressure, and a third step of lifting up the substrate from the mounting table after the first step and before the second step or in parallel with the second step.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: August 16, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hideaki Yamasaki, Tomonari Urano
  • Patent number: 11150142
    Abstract: There is provided a thermocouple-fixing jig for fixing a thermocouple to a linear heater, the thermocouple-fixing jig comprising a first member and a second member configured to hold the linear heater therebetween, wherein the second member comprises a first holding portion and a second holding portion that hold a temperature detection part of the thermocouple.
    Type: Grant
    Filed: April 1, 2019
    Date of Patent: October 19, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hideaki Yamasaki, Takashi Mochizuki, Takeshi Itatani
  • Patent number: 11069512
    Abstract: A film forming apparatus, for forming a film on a target substrate using a processing gas excited by plasma, includes: a processing chamber for accommodating the substrate; a mounting table for mounting thereon the substrate in the processing chamber; a gas injection member provided to face the substrate mounted on the mounting table and configured to inject the processing gas toward the target substrate on the mounting table; and a plasma generation unit for exciting the processing gas by generating plasma between the gas injection member and the mounting table. The gas injection member has a gas injection surface facing the mounting table. Gas injection holes are formed in the gas injection surface. A gas injection hole forming region, on the gas injection surface, where the gas injection holes are formed is smaller than a region on the gas injection surface which corresponds to the target substrate.
    Type: Grant
    Filed: August 8, 2017
    Date of Patent: July 20, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shinya Okabe, Takashi Mochizuki, Hideaki Yamasaki, Nagayasu Hiramatsu, Kazuki Dempoh
  • Patent number: 10968514
    Abstract: There is provided a substrate mounting table for use in a plasma-based processing apparatus that performs a plasma-based process on a substrate inside a processing container, which includes a substrate mounting portion having a front surface subjected to a mirroring treatment and on which the substrate is mounted, and an edge portion located around the substrate mounting portion and treated to have an uneven shape.
    Type: Grant
    Filed: November 16, 2018
    Date of Patent: April 6, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Kohichi Satoh, Hideaki Yamasaki, Motoko Nakagomi, Junya Oka
  • Patent number: 10903086
    Abstract: A titanium silicide region forming method includes: performing a pretreatment to expose a clean surface of a silicon layer of a workpiece; forming a titanium-containing region and a titanium silicide region on the silicon layer after performing the pretreatment; and supplying a fluorine-containing gas to the workpiece including the titanium-containing region and the titanium silicide region so as to selectively etch the titanium-containing region with respect to the titanium silicide region.
    Type: Grant
    Filed: April 17, 2018
    Date of Patent: January 26, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hideaki Yamasaki, Kensaku Tanaka, Yuji Kobayashi
  • Publication number: 20200258747
    Abstract: There is provided a method of processing a substrate, the method including: providing the substrate on which a natural oxide film is formed; performing a pre-processing on the substrate such that the natural oxide film formed on the substrate is removed; and directly forming a tungsten film on the substrate by heating a stage on which the substrate is mounted to a predetermined temperature and supplying a tungsten chloride gas and a reduction gas to the substrate which has been subjected to the pre-processing.
    Type: Application
    Filed: February 6, 2020
    Publication date: August 13, 2020
    Inventors: Kensaku NARUSHIMA, Nagayasu HIRAMATSU, Takanobu HOTTA, Atsushi MATSUMOTO, Masato ARAKI, Hideaki YAMASAKI
  • Patent number: 10738374
    Abstract: There is provided a method of performing a surface treatment with respect to a metal mounting table for mounting a substrate to be plasma-processed, the mounting table functioning as a lower electrode configured to generate a plasma by a high frequency power applied between an upper electrode and the lower electrode. The method includes: performing a first surface treatment by spraying a non-sublimation blast material as a non-sublimation material onto a mounting surface of the metal mounting table on which the substrate is mounted, followed by a second surface treatment by spraying a sublimation blast material as a sublimation material onto the mounting surface.
    Type: Grant
    Filed: January 4, 2017
    Date of Patent: August 11, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Shinya Okabe, Hideaki Yamasaki, Junya Oka, Yuuji Kobayashi, Takamichi Kikuchi
  • Patent number: 10731248
    Abstract: A vacuum processing apparatus for processing a substrate under a vacuum atmosphere includes a vacuum processing module, a vacuum transfer module, a gate valve and a control unit. The vacuum processing module includes a processing chamber, a mounting table and a first gas supply unit. The vacuum transfer module includes a transfer chamber airtightly connected to the processing chamber through the transfer port, a transfer unit and a second gas supply unit. The gate valve is configured to open and close the transfer port for the substrate. The control unit is configured to open the gate valve in a state where a flow rate of an inert gas supplied from the first gas supply unit is smaller than a flow rate of an inert gas supplied from the second gas supply unit and a pressure in the processing chamber is lower than a pressure in the transfer chamber.
    Type: Grant
    Filed: January 13, 2017
    Date of Patent: August 4, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hideaki Yamasaki, Shinya Okabe, Takeshi Itatani
  • Patent number: 10546753
    Abstract: Provided is a method of removing a silicon oxide film of a workpiece having an insulating film and the silicon oxide film exposed at a bottom portion of an opening formed in the insulating film, including: forming a protective film containing carbon on a surface of the workpiece, wherein the protective film has a first region extending along a side wall surface of the insulating film that defines the opening and a second region extending on the silicon oxide film: removing the second region of the protective film and the silicon oxide film by sputter etching with ions from plasma of a first inert gas; and removing a residue of the silicon oxide film by chemical etching. The step of forming the protective film includes executing a plurality of cycles.
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: January 28, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hideaki Yamasaki, Takamichi Kikuchi, Seishi Murakami
  • Patent number: 10519542
    Abstract: A purging method for purging an interior of a processing container of a substrate processing apparatus after a film forming process is executed on a wafer in the processing container, includes a first process of pressurizing a first gas in a first line of the substrate processing apparatus and then discharging the first gas into the processing container, and a second process of supplying a second gas into the processing container. The second process is executed after execution of the first process, the first gas includes an inert gas, and the second gas includes a hydrogen gas, a nitrogen-containing gas, a rare gas or a combination of these gases.
    Type: Grant
    Filed: December 20, 2017
    Date of Patent: December 31, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hideaki Yamasaki, Takeshi Itatani