Abstract: A substrate processing method includes: by supplying a first metal halide gas including a first metal to a substrate in which an insulator layer is deposited on a silicon layer and a recess portion is formed in the insulator layer, forming a metal layer of the first metal included in the first metal halide gas on a surface of the silicon layer exposed in the recess portion; and subsequently, by supplying a second metal halide gas, which includes a second metal different from the first metal and reacts with the first metal, to the substrate in which the silicon of the silicon layer is diffused to the metal layer to form a metal silicide layer, removing the first metal adhering to a side wall surface of the recess portion.

Abstract: There is provided a method of processing a substrate, the method including: providing the substrate on which a natural oxide film is formed; performing a pre-processing on the substrate such that the natural oxide film formed on the substrate is removed; and directly forming a tungsten film on the substrate by heating a stage on which the substrate is mounted to a predetermined temperature and supplying a tungsten chloride gas and a reduction gas to the substrate which has been subjected to the pre-processing.

Abstract: A method of pre-coating an inner surface of a chamber, which includes a surface of a substrate-supporting support base installed in an internal space in the chamber, includes: forming a first film on the inner surface by supplying a first gas; forming a second film on the first film by supplying a second gas; and forming a third film on the second film by supplying a third gas, wherein a flow rate ratio of a hydrogen-containing gas to a metal source gas in the first gas is set to be higher than flow rate ratios of the hydrogen-containing gas to the metal source gas in the second gas and the third gas, and wherein the flow rate of the metal source gas in the first gas is set to be lower than the flow rates of the metal source gas in the second gas and the third gas.

Abstract: There is provided a film forming method for forming a tungsten film, comprising: preparing a substrate; and forming a tungsten film on the substrate. A chlorine-containing tungsten film whose film stress is adjusted by chlorine concentration in the film is formed as at least a part of the tungsten film.

Abstract: There is provided a stress reducing method comprising: preparing a film forming apparatus configured to form a tungsten film on a substrate in a chamber by supplying a tungsten raw material gas and a reducing gas into the chamber; and making at least a part of a tungsten film deposited on an in-chamber component into a chlorine-containing tungsten film whose film stress is reduced by adjusting a chlorine concentration, when performing precoating in the chamber and/or when forming the tungsten film on the substrate, using the tungsten raw material gas and the reducing gas.

Abstract: A particle suppression method includes a) supplying a first processing gas containing a halogen element and a metal element into a chamber in which a substrate is accommodated and plasmatizing the first processing gas to form a film containing the metal element on the substrate, b) reducing a surface of a deposit formed on an inner wall of the chamber by supplying a second processing gas including hydrogen gas into the chamber and turning the second processing gas into plasma, and c) nitriding the reduced surface of the deposit by supplying a third processing gas containing a nitrogen element into the chamber.

Abstract: An apparatus for forming a film on a substrate includes: a processing container in which a reaction gas is supplied to a surface of the substrate; a stage installed in the processing container, configured to place the substrate and including a heater; a lifting shaft connected to an external lifting mechanism via a through port formed in the processing container; a casing installed between the processing container and the lifting mechanism and covering the lifting shaft; a lid member disposed to surround the lifting shaft with a gap interposed between the lifting shaft and the lid member, and installed in the processing container; a purge gas supplier configured to supply a purge gas into the casing; and a guide member disposed at a position facing the gap that opens toward an interior of the processing container and including a guide surface configured to guide the purge gas.

Abstract: A showerhead includes a shower plate, a base member in which a gas flow passage is provided, the base member fixing the shower plate, a plurality of gas supply members disposed in a gas diffusion space and connected to the gas flow passage, the gas diffusion space being formed between the shower plate and the base member, and a flow adjusting plate disposed in the gas diffusion space, the flow adjusting plate being disposed on an outer periphery on an outer side from the plurality of gas supply members.

Abstract: A showerhead includes a shower plate and a base member including a gas flow path, the base member fixing the shower plate. The showerhead includes gas supply members disposed at a gas diffusion space, the gas diffusion space being provided between the shower plate and the base member, the gas supply members being connected to the gas flow path, each of the gas supply members including outlets via which gas is radially discharged, and the gas supply members being arranged such that the gas discharged via the outlets of the gas supply members generates a rotational flow.

Abstract: There is provided a substrate processing apparatus which includes: a substrate mounting table installed in a vacuum vessel; a gas supply part configured to supply a processing gas into the vacuum vessel; a vacuum-exhausting part configured to exhaust the interior of the vacuum vessel; an elevating member configured to lift up and down a substrate while holding the substrate mounted on the mounting table; and a control part configured to output a control signal to execute a first step of supplying the processing gas onto the substrate and setting an internal pressure of the vacuum vessel to a first pressure, a second step of changing the internal pressure to a second pressure lower than the first pressure, and a third step of lifting up the substrate from the mounting table after the first step and before the second step or in parallel with the second step.

Abstract: There is provided a thermocouple-fixing jig for fixing a thermocouple to a linear heater, the thermocouple-fixing jig comprising a first member and a second member configured to hold the linear heater therebetween, wherein the second member comprises a first holding portion and a second holding portion that hold a temperature detection part of the thermocouple.

Abstract: A film forming apparatus, for forming a film on a target substrate using a processing gas excited by plasma, includes: a processing chamber for accommodating the substrate; a mounting table for mounting thereon the substrate in the processing chamber; a gas injection member provided to face the substrate mounted on the mounting table and configured to inject the processing gas toward the target substrate on the mounting table; and a plasma generation unit for exciting the processing gas by generating plasma between the gas injection member and the mounting table. The gas injection member has a gas injection surface facing the mounting table. Gas injection holes are formed in the gas injection surface. A gas injection hole forming region, on the gas injection surface, where the gas injection holes are formed is smaller than a region on the gas injection surface which corresponds to the target substrate.

Abstract: There is provided a substrate mounting table for use in a plasma-based processing apparatus that performs a plasma-based process on a substrate inside a processing container, which includes a substrate mounting portion having a front surface subjected to a mirroring treatment and on which the substrate is mounted, and an edge portion located around the substrate mounting portion and treated to have an uneven shape.

Abstract: A titanium silicide region forming method includes: performing a pretreatment to expose a clean surface of a silicon layer of a workpiece; forming a titanium-containing region and a titanium silicide region on the silicon layer after performing the pretreatment; and supplying a fluorine-containing gas to the workpiece including the titanium-containing region and the titanium silicide region so as to selectively etch the titanium-containing region with respect to the titanium silicide region.

Abstract: There is provided a method of processing a substrate, the method including: providing the substrate on which a natural oxide film is formed; performing a pre-processing on the substrate such that the natural oxide film formed on the substrate is removed; and directly forming a tungsten film on the substrate by heating a stage on which the substrate is mounted to a predetermined temperature and supplying a tungsten chloride gas and a reduction gas to the substrate which has been subjected to the pre-processing.

Abstract: There is provided a method of performing a surface treatment with respect to a metal mounting table for mounting a substrate to be plasma-processed, the mounting table functioning as a lower electrode configured to generate a plasma by a high frequency power applied between an upper electrode and the lower electrode. The method includes: performing a first surface treatment by spraying a non-sublimation blast material as a non-sublimation material onto a mounting surface of the metal mounting table on which the substrate is mounted, followed by a second surface treatment by spraying a sublimation blast material as a sublimation material onto the mounting surface.

Abstract: A vacuum processing apparatus for processing a substrate under a vacuum atmosphere includes a vacuum processing module, a vacuum transfer module, a gate valve and a control unit. The vacuum processing module includes a processing chamber, a mounting table and a first gas supply unit. The vacuum transfer module includes a transfer chamber airtightly connected to the processing chamber through the transfer port, a transfer unit and a second gas supply unit. The gate valve is configured to open and close the transfer port for the substrate. The control unit is configured to open the gate valve in a state where a flow rate of an inert gas supplied from the first gas supply unit is smaller than a flow rate of an inert gas supplied from the second gas supply unit and a pressure in the processing chamber is lower than a pressure in the transfer chamber.

Abstract: Provided is a method of removing a silicon oxide film of a workpiece having an insulating film and the silicon oxide film exposed at a bottom portion of an opening formed in the insulating film, including: forming a protective film containing carbon on a surface of the workpiece, wherein the protective film has a first region extending along a side wall surface of the insulating film that defines the opening and a second region extending on the silicon oxide film: removing the second region of the protective film and the silicon oxide film by sputter etching with ions from plasma of a first inert gas; and removing a residue of the silicon oxide film by chemical etching. The step of forming the protective film includes executing a plurality of cycles.

Abstract: A purging method for purging an interior of a processing container of a substrate processing apparatus after a film forming process is executed on a wafer in the processing container, includes a first process of pressurizing a first gas in a first line of the substrate processing apparatus and then discharging the first gas into the processing container, and a second process of supplying a second gas into the processing container. The second process is executed after execution of the first process, the first gas includes an inert gas, and the second gas includes a hydrogen gas, a nitrogen-containing gas, a rare gas or a combination of these gases.

Abstract: There is provided a method of forming a metal film. The method includes forming a first metal film on a substrate accommodated in a processing container using a plasma CVD method by supplying a first gas including a metal precursor gas and a plasma excitation gas, and a second gas including a reducing gas and a plasma excitation gas into the processing container and after the forming the first metal film, forming a second metal film on the first metal film using a plasma CVD method by supplying a third gas including the metal precursor gas and the plasma excitation gas, and a fourth gas including the reducing gas and the plasma excitation gas into the processing container.