Patents by Inventor Hideaki Yamasaki
Hideaki Yamasaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7456109Abstract: A cleaning method of a substrate processor that reduces damage to a member in a substrate processing container. The method of cleaning the substrate processing container of the substrate processor that processes a target substrate according to the present invention includes: introducing gas into a remote plasma generating unit of the substrate processor; exciting the gas by the remote plasma generating unit, and generating reactive species; and supplying the reactive species to the processing container from the remote plasma generating unit, and pressurizing the processing container at 1333 Pa or greater.Type: GrantFiled: November 14, 2003Date of Patent: November 25, 2008Assignee: Tokyo Electron LimitedInventors: Hideaki Yamasaki, Kazuhito Nakamura, Koumei Matsuzawa, Tsukasa Matsuda, Yumiko Kawano
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Patent number: 7427426Abstract: A CVD method for forming a metal film on a substrate by using a metal carbonyl gas includes a preparing step for setting a vacuum chamber at a vacuum pressure and heating the substrate in the vacuum chamber to a first temperature where the metal carbonyl gas is decomposed. Also included are a supplying step for supplying the metal carbonyl gas into the vacuum chamber while exhausting the vacuum chamber with a first vacuum pumping speed and a removing step for removing a decomposed gas of the metal carbonyl gas by stopping supplying of the metal carbonyl gas and quickly exhausting the vacuum chamber with a second vacuum pumping speed sufficiently higher than the first vacuum pumping speed. The supplying step and the removing step can be repeatedly as desired.Type: GrantFiled: May 3, 2005Date of Patent: September 23, 2008Assignee: Tokyo Electron LimitedInventors: Tatsuo Hatano, Hideaki Yamasaki
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Publication number: 20080119033Abstract: A method for integrating a metal-containing film in a semiconductor device, for example a gate stack. In one embodiment, the method includes providing a substrate in a process chamber, depositing the tungsten-containing film on the substrate at a first substrate temperature by exposing the substrate to a deposition gas containing a tungsten carbonyl precursor, heat treating the tungsten-containing film at a second substrate temperature greater than the first substrate temperature to remove carbon monoxide gas from the tungsten-containing film, and forming a barrier layer on the heat treated tungsten-containing film. Examples of tungsten-containing films include W, WN, WSi, and WC. Additional embodiments include depositing metal-containing films containing Ni, Mo, Co, Rh, Re, Cr, or Ru from the corresponding metal carbonyl precursors.Type: ApplicationFiled: November 20, 2006Publication date: May 22, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Shigeo Ashigaki, Hideaki Yamasaki, Tomoyuki Sakoda, Mikio Suzuki, Genji Nakamura, Gert Leusink
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Patent number: 7361595Abstract: A semiconductor substrate is placed in a predetermined processing vessel, and oxygen gas activated by, e.g. conversion into a plasma is supplied onto an insulating film. The surfaces of an interlevel insulating film and insulating film are exposed to the activated oxygen gas. After that, a transition metal film, e.g. a ruthenium film, is formed by CVD.Type: GrantFiled: March 14, 2002Date of Patent: April 22, 2008Assignee: Tokyo Electron LimitedInventors: Hideaki Yamasaki, Susumu Arima, Yumiko Kawano
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Patent number: 7344754Abstract: A method of forming a metal film using a metal carbonyl compound as a material is disclosed that includes the steps of: (a) introducing a reactive gas into a space near a surface of a substrate to be processed; and (b) introducing a gaseous phase material including the metal carbonyl compound into the space on the surface of the substrate to be processed, and depositing the metal film on the surface of the substrate to be processed after step (a). Step (a) is executed in such a manner as to prevent substantial deposition of the metal film on the substrate to be processed.Type: GrantFiled: June 20, 2005Date of Patent: March 18, 2008Assignee: Tokyo Electron LimitedInventors: Hideaki Yamasaki, Tatsuo Hatano, Yumiko Kawano
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Patent number: 7189431Abstract: A method for forming a passivated metal layer that preserves the properties and morphology of an underlying metal layer during subsequent exposure to oxygen-containing ambients. The method includes providing a substrate in a process chamber, exposing the substrate to a process gas containing a rhenium-carbonyl precursor to deposit a rhenium metal layer on the substrate in a chemical vapor deposition process, and forming a passivation layer on the rhenium metal layer to thereby inhibit oxygen-induced growth of rhenium-containing nodules on the rhenium metal surface.Type: GrantFiled: September 30, 2004Date of Patent: March 13, 2007Assignees: Tokyo Electron Limited, International Business Machines Corp.Inventors: Hideaki Yamasaki, Kazuhito Nakamura, Yumiko Kawano, Gert J. Leusink, Fenton R. McFeely, Paul Jamison
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Patent number: 7078341Abstract: A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process. The TCVD process utilizes high flow rate of a dilute process gas containing a metal-carbonyl precursor to deposit a metal layer. In one embodiment of the invention, the metal-carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12. In another embodiment of the invention, a method is provided for depositing a W layer from a process gas comprising a W(CO)6 precursor at a substrate temperature of about 410° C. and a chamber pressure of about 200 mTorr.Type: GrantFiled: September 30, 2003Date of Patent: July 18, 2006Assignees: Tokyo Electron Limited, International Business Machines CorporationInventors: Hideaki Yamasaki, Tsukasa Matsuda, Atsushi Gomi, Tatsuo Hatano, Masahito Sugiura, Yumiko Kawano, Gert J Leusink, Fenton R McFeely, Sandra G. Malhotra
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Patent number: 7067422Abstract: A method for forming a tantalum-containing gate electrode structure by providing a substrate having a high-k dielectric layer thereon in a process chamber and forming a tantalum-containing layer on the high-k dielectric layer in a thermal chemical vapor deposition process by exposing the substrate to a process gas containing TAIMATA (Ta(N(CH3)2)3(NC(C2H5)(CH3)2)) precursor gas. In one embodiment of the invention, the tantalum-containing layer can include a TaSiN layer formed from a process gas containing TAIMATA precursor gas, a silicon containing gas, and optionally a nitrogen-containing gas. In another embodiment of the invention, a TaN layer is formed on the TaSiN layer. The TaN layer can be formed from a process gas containing TAIMATA precursor gas and optionally a nitrogen-containing gas. A computer readable medium executable by a processor to cause a processing system to perform the method and a processing system for forming a tantalum-containing gate electrode structure are also provided.Type: GrantFiled: March 31, 2004Date of Patent: June 27, 2006Assignees: Tokyo Electron Limited, International Business Machines CorporationInventors: Kazuhito Nakamura, Hideaki Yamasaki, Yumiko Kawano, Gert J. Leusink, Fenton R. McFeely, John J. Yurkas, Vijay Narayanan
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Patent number: 7063871Abstract: A metal CVD process includes a step (A) of introducing a gaseous source material containing a metal carbonyl compound into a process space adjacent to a surface of a substrate to be processed in such a manner that the metal carbonyl compound has a first partial pressure, and a step (B) of depositing a metal film on the surface of the substrate by introducing a gaseous source material containing the metal carbonyl compound into the process space in such a mater that the metal carbonyl compound has a second, smaller partial pressure. The step (A) is conducted such that there is caused no substantial deposition of the metal film on the substrate.Type: GrantFiled: July 14, 2003Date of Patent: June 20, 2006Assignee: Tokyo Electron LimitedInventors: Hideaki Yamasaki, Tatsuo Hatano, Tsukasa Matsuda, Taro Ikeda, Kazuhito Nakamura, Koumei Matsuzawa, Yumiko Kawano, Mitsuhiro Tachibana
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Publication number: 20060124151Abstract: A cleaning method of a substrate processor that reduces damage to a member in a substrate processing container. The method of cleaning the substrate processing container of the substrate processor that processes a target substrate according to the present invention includes: introducing gas into a remote plasma generating unit of the substrate processor; exciting the gas by the remote plasma generating unit, and generating reactive species; and supplying the reactive species to the processing container from the remote plasma generating unit, and pressurizing the processing container at 1333 Pa or greater.Type: ApplicationFiled: November 14, 2003Publication date: June 15, 2006Applicant: TOKYO ELECTRON LIMITEDInventors: Hideaki Yamasaki, Kazuhito Nakamura, Koumei Matsuzawa, Tsukasa Matsuda, Yumiko Kawano
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Publication number: 20060068097Abstract: A method for forming a passivated metal layer that preserves the properties and morphology of an underlying metal layer during subsequent exposure to oxygen-containing ambients. The method includes providing a substrate in a process chamber, exposing the substrate to a process gas containing a rhenium-carbonyl precursor to deposit a rhenium metal layer on the substrate in a chemical vapor deposition process, and forming a passivation layer on the rhenium metal layer to thereby inhibit oxygen-induced growth of rhenium-containing nodules on the rhenium metal surface.Type: ApplicationFiled: September 30, 2004Publication date: March 30, 2006Applicants: TOKYO ELECTRON LIMITED, INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Hideaki Yamasaki, Kazuhito Nakamura, Yumiko Kawano, Gert Leusink, Fenton McFeely, Paul Jamison
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Publication number: 20060068098Abstract: A method for depositing a Ru metal layer on a substrate is presented. The method includes providing a substrate in a process chamber, introducing a process gas in the process chamber in which the process gas comprises a carrier gas, a ruthenium-carbonyl precursor, and hydrogen. The method further includes depositing a Ru metal layer on the substrate by a thermal chemical vapor deposition process. In one embodiment of the invention, the ruthenium-carbonyl precursor can contain Ru3(CO)12. and the Ru metal layer can be deposited at a substrate temperature resulting in the Ru metal layer having predominantly Ru(002) crystallographic orientation.Type: ApplicationFiled: September 27, 2004Publication date: March 30, 2006Applicant: Tokyo Electron LimitedInventors: Hideaki Yamasaki, Yumiko Kawano, Gert Leusink
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Publication number: 20060068588Abstract: A method for depositing Ru and Re metal layers on substrates with high deposition rates, low particulate contamination, and good step coverage on patterned substrates is presented. The method includes providing a substrate in a process chamber, introducing a process gas in the process chamber in which the process gas comprises a carrier gas and a metal precursor selected from the group consisting of a ruthenium-carbonyl precursor and a rhenium-carbonyl precursor. The method further includes depositing a Ru or Re metal layer on the substrate by a thermal chemical vapor deposition process at a process chamber pressure less than about 20 mTorr.Type: ApplicationFiled: September 30, 2004Publication date: March 30, 2006Applicants: Tokyo Electron Limited, International Business Machines CorporationInventors: Hideaki Yamasaki, Kenji Suzuki, Emmanuel Guidotti, Enrico Mosca, Gert Leusink, Yumiko Kawano, Fenton McFeely, Sandra Malhotra
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Patent number: 6989321Abstract: A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a process gas containing a metal carbonyl precursor in a process chamber and depositing a metal layer on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In one embodiment of the invention, the metal carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12 precursors. In another embodiment of the invention, a method is provided for depositing low-resistivity W layers at substrate temperatures below about 500° C., by utilizing a residence time less than about 120 msec.Type: GrantFiled: September 30, 2003Date of Patent: January 24, 2006Assignees: Tokyo Electron Limited, International Business Machines CorporationInventors: Hideaki Yamasaki, Tsukasa Matsuda, Atsushi Gomi, Tatsuo Hatano, Masahito Sugiura, Yumiko Kawano, Gert J Leusink, Fenton R McFeely, Sandra G. Malhotra
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Patent number: 6966936Abstract: An object of the present invention is to ensure the stable operation of a vacuum pump for discharging an unused source gas and reaction byproduct gases from a low-pressure processing chamber, to recover the reaction byproducts efficiently for the effective utilization of resources and reduction of running costs. A low-pressure CVD system has a processing vessel (10) for carrying out a low-pressure CVD process for forming a copper film, a source gas supply unit (12) for supplying an organic copper compound as a source gas, such as Cu(I)hfacTMVS, into the processing vessel (10), and an evacuating system (14) for evacuating the processing vessel (10). The evacuating system (14) includes a vacuum pump (26), a high-temperature trapping device (28) disposed above the vacuum pump (26) with respect to the flowing direction of a gas, and a low-temperature trapping device (30) disposed below the vacuum pump with respect to the flowing direction of a gas.Type: GrantFiled: October 23, 2002Date of Patent: November 22, 2005Assignee: Tokyo Electron LimitedInventors: Hideaki Yamasaki, Yumiko Kawano, Kenichi Kubo, Susumu Arima
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Publication number: 20050233079Abstract: A method of forming a metal film using a metal carbonyl compound as a material is disclosed that includes the steps of: (a) introducing a reactive gas into a space near a surface of a substrate to be processed; and (b) introducing a gaseous phase material including the metal carbonyl compound into the space on the surface of the substrate to be processed, and depositing the metal film on the surface of the substrate to be processed after step (a). Step (a) is executed in such a manner as to prevent substantial deposition of the metal film on the substrate to be processed.Type: ApplicationFiled: June 20, 2005Publication date: October 20, 2005Applicant: TOKYO ELECTRON LIMITEDInventors: Hideaki Yamasaki, Tatsuo Hatano, Yumiko Kawano
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Publication number: 20050227441Abstract: A method for forming a tantalum-containing gate electrode structure by providing a substrate having a high-k dielectric layer thereon in a process chamber and forming a tantalum-containing layer on the high-k dielectric layer in a thermal chemical vapor deposition process by exposing the substrate to a process gas containing TAIMATA (Ta(N(CH3)2)3(NC(C2H5)(CH3)2)) precursor gas. In one embodiment of the invention, the tantalum-containing layer can include a TaSiN layer formed from a process gas containing TAIMATA precursor gas, a silicon containing gas, and optionally a nitrogen-containing gas. In another embodiment of the invention, a TaN layer is formed on the TaSiN layer. The TaN layer can be formed from a process gas containing TAIMATA precursor gas and optionally a nitrogen-containing gas. A computer readable medium executable by a processor to cause a processing system to perform the method and a processing system for forming a tantalum-containing gate electrode structure are also provided.Type: ApplicationFiled: March 31, 2004Publication date: October 13, 2005Inventors: Kazuhito Nakamura, Hideaki Yamasaki, Yumiko Kawano, Gert Leusink, Fenton McFeely, John Yurkas, Vijay Narayanan
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CVD method using metal carbonyl gas and computer storage medium storing program for controlling same
Publication number: 20050196534Abstract: A CVD method for forming a metal film on a substrate by using a metal carbonyl gas includes a preparing step for setting a vacuum chamber at a vacuum pressure and heating the substrate in the vacuum chamber to a first temperature where the metal carbonyl gas is decomposed. Also included are a supplying step for supplying the metal carbonyl gas into the vacuum chamber while exhausting the vacuum chamber with a first vacuum pumping speed and a removing step for removing a decomposed gas of the metal carbonyl gas by stopping supplying of the metal carbonyl gas and quickly exhausting the vacuum chamber with a second vacuum pumping speed sufficiently higher than the first vacuum pumping speed. The supplying step and the removing step can be repeatedly as desired.Type: ApplicationFiled: May 3, 2005Publication date: September 8, 2005Applicant: TOKYO ELECTRON LIMITEDInventors: Tatsuo Hatano, Hideaki Yamasaki -
Patent number: 6924223Abstract: A method is provided for forming a metal layer on a substrate using an intermittent precursor gas flow process. The method includes exposing the substrate to a reducing gas while exposing the substrate to pulses of a metal-carbonyl precursor gas. The process is carried out until a metal layer with desired thickness is formed on the substrate. The metal layer can be formed on a substrate, or alternately, the metal layer can be formed on a metal nucleation layer.Type: GrantFiled: September 30, 2003Date of Patent: August 2, 2005Assignees: Tokyo Electron Limited, International Business Machines CorporationInventors: Hideaki Yamasaki, Tsukasa Matsuda, Atsushi Gomi, Tatsuo Hatano, Mitsuhiro Tachibana, Koumei Matsuzava, Yumiko Kawano, Gert J Leusink, Fenton R McFeely, Sandra G. Malhotra, Andrew H Simon, John J Yurkas
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Patent number: 6919268Abstract: WF6 is used as a source gas of tungsten, and NH3 is used as a source gas of nitrogen. The partial pressure of WF6 is set to be higher than that of NH3. The substrate temperature is set to about 400° C. to 450° C. Tungsten nitride is deposited and then heated, to form a contact plug (106).Type: GrantFiled: December 25, 2001Date of Patent: July 19, 2005Assignee: Tokyo Electron LimitedInventors: Hideaki Yamasaki, Yumiko Kawano