Abstract: A metal film forming method, includes the steps of (a) (s13, s15) supplying a plural kinds of ingredient gases to a base barrier film (3) in sequence, wherein at least one of the gases includes a metal, and (b) (s14, s16) vacuum-exhausting the ingredient gases of the step (a) or substituting the ingredient gases of the step (a) by an other kind of gas after the ingredient gases of the step (a) are supplied respectively, thereby an extremely thin film (5) of the metal is formed on the base barrier film (3).

Abstract: A film forming unit includes a source vessel for receiving a raw material from which source gas is produced, a processing vessel for applying a film forming process on a semiconductor substrate, a source supply line for supplying the source gas from the source vessel to the processing vessel, a gas exhaust line for exhausting gas from the processing vessel, having a vacuum pump system structured by a turbo molecular pump and a dry pump, and a pre-flow line branching off from the source supply line while bypassing the processing vessel and the turbo molecular pump, and joining to the gas exhaust line. Moreover, the source supply line includes piping having an inner diameter greater than 6.4 mm, and a turbo molecular pump is provided in the pre-flow line.

Abstract: A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process. The TCVD process utilizes high flow rate of a dilute process gas containing a metal-carbonyl precursor to deposit a metal layer. In one embodiment of the invention, the metal-carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12. In another embodiment of the invention, a method is provided for depositing a W layer from a process gas comprising a W(CO)6 precursor at a substrate temperature of about 410° C. and a chamber pressure of about 200 mTorr.

Abstract: A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a process gas containing a metal carbonyl precursor in a process chamber and depositing a metal layer on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In one embodiment of the invention, the metal carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12 precursors. In another embodiment of the invention, a method is provided for depositing low-resistivity W layers at substrate temperatures below about 500° C., by utilizing a residence time less than about 120 msec.

Abstract: A method for depositing metal layers with good surface morphology using sequential flow deposition includes alternately exposing a substrate in a process chamber to a metal-carbonyl precursor gas and a reducing gas. During exposure with the metal-carbonyl precursor gas, a thin metal layer is deposited on the substrate, and subsequent exposure of the metal layer to the reducing gas aids in the removal of reaction by-products from the metal layer. The metal-carbonyl precursor gas and a reducing gas exposure steps can be repeated until a metal layer with a desired thickness is achieved. The metal-carbonyl precursor can, for example, be selected from W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12.

Abstract: A method is provided for forming a metal layer on a substrate using an intermittent precursor gas flow process. The method includes exposing the substrate to a reducing gas while exposing the substrate to pulses of a metal-carbonyl precursor gas. The process is carried out until a metal layer with desired thickness is formed on the substrate. The metal layer can be formed on a substrate, or alternately, the metal layer can be formed on a metal nucleation layer.

Abstract: A semiconductor device includes an interlevel insulating film, a contact plug, a barrier film, a first electrode, a capacitor insulating file, and a second electrode. The interlevel insulating film is formed on a semiconductor substrate. The contact plug extends through the interlevel insulating film and is formed from a conductive material. The barrier film is formed from a tungsten-based material on the upper surface of the contact plug. The first electrode is connected to the contact plug via the barrier film and formed from a metal material on the interlevel insulating film. The capacitor insulating film is formed from an insulating metal oxide on the first electrode. The second electrode is insulated by the capacitor insulating film and formed on the surface of the first electrode.

Abstract: A semiconductor substrate (101) is placed in a predetermined processing vessel, and oxygen gas activated by, e.g., conversion into a plasma is supplied onto an insulating film (108). The surfaces of an interlevel insulating film (106) and insulating film (108) are exposed to the activated oxygen gas. After that, a ruthenium film (109) is formed by CVD.

Abstract: A film-forming unit of the invention includes a processing container in which a vacuum can be created, a stage arranged in the processing container, on which an object to be processed is placed, a process-gas supplying means for supplying a process gas into the processing container, and a heating means for heating the object to be processed placed on the stage. A division wall surrounds a lateral side and a lower side of the stage. An inert gas is introduced into a stage-side region surrounded by the division wall, by an inert-gas supplying means. A gap-forming member is arranged in such a manner that its inner peripheral portion is arranged above a peripheral portion of the object to be processed placed on the stage via a gap and its outer peripheral portion is arranged above the division wall via a gap.

Abstract: After a thin film is deposited on a treatment surface of a wafer and the wafer is transferred out of a treatment chamber, a contact projection of a clamp is brought into contact with a susceptor to heat the clamp. Next, a wafer is disposed on the susceptor by elevating the clamp when the wafer, on which a thin film is not deposited, is transferred in. Thereafter, the clamp is brought into contact with the wafer and the wafer is stabilized to a predetermined temperature. Thereafter, a thin film is deposited on a treatment surface of the wafer.

Abstract: The present invention relates to a method and apparatus for forming a thin film using the ALD process. Prior to the ALD process where each of a plurality of source gasses is supplied one by one, plural times, a pretreatment process is performed in which the source gasses are simultaneously supplied to shorten an incubation period and improve throughput.

Abstract: A metal CVD process includes a step (A) of introducing a gaseous source material containing a metal carbonyl compound into a process space adjacent to a surface of a substrate to be processed in such a manner that the metal carbonyl compound has a first partial pressure, and a step (B) of depositing a metal film on the surface of the substrate by introducing a gaseous source material containing the metal carbonyl compound into the process space in such a mater that the metal carbonyl compound has a second, smaller partial pressure. The step (A) is conducted such that there is caused no substantial deposition of the metal film on the substrate.

Abstract: A film-formation apparatus includes a film-formation chamber and a source gas supplying apparatus supplying a source gas to the film-formation chamber together with a carrier gas, wherein the source gas supplying apparatus includes a concentration detector detecting a concentration of the source gas and a gas flow controller controlling a flow rate of an inert gas added to the carrier gas based on a result of measurement of the concentration of the source gas obtained by the concentration detector.

Abstract: A manufacturing method of a semiconductor device of the invention is a method of manufacturing a semiconductor device by forming a plurality of films on an insulating layer which has a surface in which a recess portion is partially formed. The method includes: a base-metal-film forming step of forming a base-metal film including a metal having a high melting point on the surface of the insulating layer including an inside surface of the recess portion, a surface-processing step of processing a surface of the base-metal film by means of an organic solvent having an OH-group, and a metal-for-circuit depositing step of depositing a metal for a circuit on the processed surface of the base-metal film by means of a CVD method in such a manner that at least a part of or the whole of the recess portion is filled up.

Abstract: A CVD reactor is provided with a precursor delivery system that is integrally connected to the reactor chamber. Liquid precursor such as a copper or other metal-organic precursor is atomized at the entry of a high flow-conductance vaporizer, preferably with the assistance of an inert sweep gas. Liquid precursor is maintained, when in an unstable liquid state, at or below room temperature. In the vaporizer, heat is introduced to uniformly heat the atomized precursor. The vaporized precursor is passed into a diffuser which diffuses the vapor, either directly or through a showerhead, into the reaction chamber.

Abstract: An object of the present invention is to ensure the stable operation of a vacuum pump for discharging an unused source gas and reaction byproduct gases from a low-pressure processing chamber, to recover the reaction byproducts efficiently for the effective utilization of resources and reduction of running costs. A low-pressure CVD system has a processing vessel (10) for carrying out a low-pressure CVD process for forming a copper film, a source gas supply unit (12) for supplying an organic copper compound as a source gas, such as Cu(I)hfacTMVS, into the processing vessel (10), and an evacuating system (14) for evacuating the processing vessel (10). The evacuating system (14) includes a vacuum pump (26), a high-temperature trapping device (28) disposed above the vacuum pump (26) with respect to the flowing direction of a gas, and a low-temperature trapping device (30) disposed below the vacuum pump with respect to the flowing direction of a gas.

Abstract: A semiconductor device includes at least one interlevel insulating film, a storage electrode, a capacitor insulating film, a plate electrode, and a protective film. The interlevel insulating film is arranged on a semiconductor substrate. The storage electrode is made of a metal material and arranged on the interlevel insulating film. The capacitor insulating film is made of an insulating metal oxide and arranged on the storage electrode. The plate electrode is made of tungsten nitride and arranged on the capacitor insulating film. The protective film is arranged on the plate electrode to suppress outward diffusion of nitrogen from the plate electrode. A method of manufacturing the semiconductor device is also disclosed.

Abstract: A metal film forming method, includes the steps of (a) (s13, s15) supplying a plural kinds of ingredient gases to a base barrier film (3) in sequence, wherein at least one of the gases includes a metal, and (b) (s14, s16) vacuum-exhausting the ingredient gases of the step (a) or substituting the ingredient gases of the step (a) by an other kind of gas after the ingredient gases of the step (a) are supplied respectively, thereby an extremely thin film (5) of the metal is formed on the base barrier film (3).

Abstract: A semiconductor device includes at least one interlevel insulating film, a storage electrode, a capacitor insulating film, a plate electrode, and a protective film. The interlevel insulating film is arranged on a semiconductor substrate. The storage electrode is made of a metal material and arranged on the interlevel insulating film. The capacitor insulating film is made of an insulating metal oxide and arranged on the storage electrode. The plate electrode is made of tungsten nitride and arranged on the capacitor insulating film. The protective film is arranged on the plate electrode to suppress outward diffusion of nitrogen from the plate electrode. A method of manufacturing the semiconductor device is also disclosed.

Abstract: In a semiconductor device manufacturing method, an interlevel insulating film is formed on a silicon substrate. A trench is formed in the interlevel insulating film. A lower underlying film made of a tungsten-based material is formed by thermal chemical vapor deposition to cover a bottom surface and side surface of the trench. An upper underlying film made of a tungsten-based material is formed by thermal chemical vapor deposition on an entire region on the lower underlying film. A copper film made of copper fills the trench. The upper underlying film is formed in accordance with thermal chemical vapor deposition by supplying a tungsten source gas and the other source gas such that the other source gas is supplied in an amount lager than that of the tungsten source gas. The lower underlying film is formed in accordance with thermal chemical vapor deposition by increasing a content of the tungsten source gas to be larger than to that of the other source gas in formation of the lower underlying film.