Abstract: A method is provided for forming a metal silicide layer on a substrate. According to one embodiment the method includes providing the substrate in a process chamber, exposing the substrate at a first substrate temperature to a plasma generated from a deposition gas containing a metal precursor, where the plasma exposure forms a conformal metal-containing layer on the substrate in a self-limiting process. The method further includes exposing the metal-containing layer at a second substrate temperature to a reducing gas in the absence of a plasma, where the exposing steps are alternatively performed at least once to form the metal silicide layer, and the deposition gas does not contain the reducing gas. The method provides conformal metal silicide formation in deep trenches with high aspect ratios.

Abstract: A ruthenium film formation method includes placing and heating a substrate inside a process chamber, and supplying a ruthenium compound gas and a decomposing gas for decomposing this compound into the process chamber while periodically modulating at least one of flow rates of these gases, to form a plurality of steps having gas compositions different from each other. Without purging an interior of the process chamber between these steps, the method includes causing the gases to react with each other on the substrate thus heated, thereby forming a ruthenium film on the substrate.

Abstract: A method is provided for forming a metal silicide layer on a substrate. According to one embodiment the method includes providing the substrate in a process chamber, exposing the substrate at a first substrate temperature to a plasma generated from a deposition gas containing a metal precursor, where the plasma exposure forms a conformal metal-containing layer on the substrate in a self-limiting process. The method further includes exposing the metal-containing layer at a second substrate temperature to a reducing gas in the absence of a plasma, where the exposing steps are alternatively performed at least once to form the metal silicide layer, and the deposition gas does not contain the reducing gas. The method provides conformal metal silicide formation in deep trenches with high aspect ratios.

Abstract: A method of cleaning a powdery source supply system prevents outflow of particles from a chamber or an introduction line in a film forming process. A substrate processing system includes a powdery source supply system and a film forming processing unit. The powdery source supply system includes an ampoule for accommodating a powdery source, a carrier gas supply unit for supplying a carrier gas into the ampoule, an introduction line for connecting the ampoule and the film forming processing unit, a purge line branched from the introduction line, and a valve for opening or closing the introduction line. When the valve is opened and the interior of the purge line is evacuated prior to the film forming process, the carrier gas supply unit supplies a carrier gas so that the viscous force acting on particles by the carrier gas is greater than the viscous force in the film forming process.

Abstract: A raw material feeding device for feeding a gaseous raw material formed by sublimating a solid raw material to a film formation system includes a raw material container for holding the solid raw material therein, a first heating unit placed at a first side of the container, a second heating unit placed at a second side thereof, the first temperature control unit for conducting a first process of controlling the first and the second heating unit to make the temperature of the first side higher than that of the second side to thereby sublimate the solid raw material disposed at the first side, and the second temperature control unit for conducting a second process of controlling the first and the second heating unit to make the temperature of the second side higher than that of the first side to thereby sublimate the solid raw material disposed at the second side.

Abstract: The present invention is a method of film deposition that comprises a film-depositing step of supplying a high-melting-point organometallic material gas and a nitrogen-containing gas to a processing vessel that can be evacuated, so as to deposit a thin film of a metallic compound of a high-melting-point metal on a surface of an object to be processed placed in the processing vessel. A partial pressure of the nitrogen-containing gas during the film-depositing step is 17% or lower, in order to increase carbon density contained in the thin film.

Abstract: A CVD method for forming a metal film on a substrate by using a metal carbonyl gas includes a preparing step for setting a vacuum chamber at a vacuum pressure and heating the substrate in the vacuum chamber to a first temperature where the metal carbonyl gas is decomposed. Also included are a supplying step for supplying the metal carbonyl gas into the vacuum chamber while exhausting the vacuum chamber with a first vacuum pumping speed and a removing step for removing a decomposed gas of the metal carbonyl gas by stopping supplying of the metal carbonyl gas and quickly exhausting the vacuum chamber with a second vacuum pumping speed sufficiently higher than the first vacuum pumping speed. The supplying step and the removing step can be repeatedly as desired.

Abstract: Disclosed is a method for forming a W-based film including a step for placing a substrate in a processing chamber, a step for forming a WSi film by alternately repeating disposition of W through introduction of a W(CO)6 gas into the processing chamber and silicidation of W or deposition of Si through introduction of an Si-containing gas into the processing chamber, and a step for purging the processing chamber between the supply of the W(CO)6 gas and the supply of the Si-containing gas.

Abstract: A method of cleaning a powdery source supply system prevents outflow of particles from a chamber or an introduction line in a film forming process. A substrate processing system includes a powdery source supply system and a film forming processing unit. The powdery source supply system includes an ampoule for accommodating a powdery source, a carrier gas supply unit for supplying a carrier gas into the ampoule, an introduction line for connecting the ampoule and the film forming processing unit, a purge line branched from the introduction line, and a valve for opening or closing the introduction line. When the valve is opened and the interior of the purge line is evacuated prior to the film forming process, the carrier gas supply unit supplies a carrier gas so that the viscous force acting on particles by the carrier gas is greater than the viscous force in the film forming process.

Abstract: A CVD film forming apparatus for forming a predetermined film on a target substrate via CVD by reacting a film forming gas on a surface of the substrate while heating the substrate includes a processing chamber capable of being maintained at vacuum, and a stage for mounting thereon the substrate in the processing chamber, the stage having a diameter larger than that of the substrate. Further, the CVD film forming apparatus includes a heating device provided in the stage to heat the substrate, a gas supply unit for supplying the film forming gas into the processing chamber, a gas exhaust device for exhausting the processing chamber to vacuum, and a covering for covering a peripheral region of the stage that surrounds the substrate mounted on the stage to reduce thermal effects from the stage to a peripheral portion of the substrate.

Abstract: A method for integrating a metal-containing film in a semiconductor device, for example a gate stack. In one embodiment, the method includes providing a substrate in a process chamber, depositing the tungsten-containing film on the substrate at a first substrate temperature by exposing the substrate to a deposition gas containing a tungsten carbonyl precursor, heat treating the tungsten-containing film at a second substrate temperature greater than the first substrate temperature to remove carbon monoxide gas from the tungsten-containing film, and forming a barrier layer on the heat treated tungsten-containing film. Examples of tungsten-containing films include W, WN, WSi, and WC. Additional embodiments include depositing metal-containing films containing Ni, Mo, Co, Rh, Re, Cr, or Ru from the corresponding metal carbonyl precursors.

Abstract: On a Si substrate 1, i.e., a semiconductor substrate, a gate insulating film 2 is formed, and then a W-based film 3a is formed on the gate insulating film 2 by CVD using a film forming gas including W(CO)6 gas. Then, the film is oxidized under existence of a reducing gas, and the W in the W-based film 3a is not oxidized but only C is selectively oxidized to reduce the concentration of C contained in the W-based film 3a. Then, after performing heat treatment as needed, resist coating, patterning, etching and the like are performed, and, an impurity diffused region 10 is formed by ion implantation and the like, and a semiconductor device having a MOS structure is formed.

Abstract: A raw material feeding device for feeding a gaseous raw material formed by sublimating a solid raw material to a film formation system includes a raw material container for holding the solid raw material therein, a first heating unit placed at a first side of the container, a second heating unit placed at a second side thereof, the first temperature control unit for conducting a first process of controlling the first and the second heating unit to make the temperature of the first side higher than that of the second side to thereby sublimate the solid raw material disposed at the first side, and the second temperature control unit for conducting a second process of controlling the first and the second heating unit to make the temperature of the second side higher than that of the first side to thereby sublimate the solid raw material disposed at the second side.

Abstract: A substrate is disposed in a processing chamber. An organic Ta compound gas having Ta?N bond, a Si-containing gas and a N-containing gas are introduced into the processing chamber to form a TaSiN film on the substrate by CVD. In this film formation, at least one of a partial pressure of the Si-containing gas in the processing chamber, a total pressure in the processing chamber, a film forming temperature and a partial pressure of the N-containing gas in the processing chamber is controlled to thereby regulate Si concentration in the film. Particularly, when SiH4 gas is used as the Si-containing gas, the SiH4 gas partial pressure is determined based on the fact that the serried Si concentration in the film under giving process conditions can be expressed as a linear function involving the logarithm of the partial pressure of the SiH4 gas.

Abstract: The present invention is a method of film deposition that comprises a film-depositing step of supplying a high-melting-point organometallic material gas and a nitrogen-containing gas to a processing vessel that can be evacuated, so as to deposit a thin film of a metallic compound of a high-melting-point metal on a surface of an object to be processed placed in the processing vessel. A partial pressure of the nitrogen-containing gas during the film-depositing step is 17% or lower, in order to increase carbon density contained in the thin film.

Abstract: The present invention is a method of film deposition that comprises a first gas-supplying step of supplying a high-melting-point organometallic material gas to a processing vessel that can be evacuated, and a second gas-supplying step of supplying, to the processing vessel, a gas consisting of one, or two or more gases selected from a nitrogen-containing gas, a silicon-containing gas, and a carbon-containing gas, wherein a thin metallic compound film composed of one, or two or more compounds selected from a high-melting-point metallic nitride, a high-melting-point metallic silicate, and a high-melting-point metallic carbide is deposited on the surface of an object to be processed, placed in the processing vessel. The first and second gas-supplying steps are alternately carried out, and in these steps, the object to be processed is held at a temperature equal to or higher than the decomposition-starting temperature of the high-melting-point organometallic material.

Abstract: A method for processing a substrate includes a film forming step of supplying a film forming gas into the processing chamber to form a film on the substrate, a cleaning step of supplying a plasma-exited cleaning gas into the processing chamber after the film forming step to clean the inside of the processing chamber, and a coating step of forming a coating within the processing chamber after the cleaning step. The cleaning step includes a high pressure cleaning of regulating the pressure in the processing chamber so that cleaning is mainly performed by molecules formed by recombining radicals in the cleaning gas, and the coating step includes a low temperature film forming step of forming the coating film under the condition that the temperature of a substrate supporting table is set lower than that in the film formation on the substrate during the film formation step.

Abstract: A substrate is placed and heated in a process chamber. A gas of a pentadienyl compound of ruthenium, such as 2,4-dimethylpentadienyl ethylcyclopentadienyl ruthenium, and oxygen gas are supplied into the process chamber. These gases react with each other on the substrate thus heated, and a ruthenium film is thereby formed on the substrate.

Abstract: The present invention relates to a method and apparatus for forming a thin film using the ALD process. Prior to the ALD process where each of a plurality of source gasses is supplied one by one, plural times, a pretreatment process is performed in which the source gasses are simultaneously supplied to shorten an incubation period and improve throughput.

Abstract: A CVD method for forming a metal film on a substrate by using a metal carbonyl gas includes a preparing step for setting a vacuum chamber at a vacuum pressure and heating the substrate in the vacuum chamber to a first temperature where the metal carbonyl gas is decomposed. Also included are a supplying step for supplying the metal carbonyl gas into the vacuum chamber while exhausting the vacuum chamber with a first vacuum pumping speed and a removing step for removing a decomposed gas of the metal carbonyl gas by stopping supplying of the metal carbonyl gas and quickly exhausting the vacuum chamber with a second vacuum pumping speed sufficiently higher than the first vacuum pumping speed. The supplying step and the removing step can be repeatedly as desired.