Abstract: As a preparation process, a gas supply source 10A supplies WF6 gas for restricting formation of nuclei for growing a metal film onto a surface of a process target semiconductor wafer W for a predetermined period of time. After the preparation process is performed, the gas supply source 10A and a gas supply source 10B respectively supply WF6 gas and NH3 gas onto the surface of the semiconductor wafer W to which the preparation process has been applied, for a predetermined period of time. Thus, a tungsten nitride film which is a metal compound film whose surface has bumps is formed on the semiconductor wafer W. A controller 51 controls operations of the gas supply sources 10A and 10B, and the like in accordance with a program or the like previously provided.

Abstract: The present invention provides a CVD apparatus and a CVD method for use in forming an Al/Cu multilayered film. The Al/Cu multilayered film is formed in the CVD apparatus comprising a chamber for placing a semiconductor wafer W, a susceptor for mounting the semiconductor wafer W thereon, an Al raw material supply system for introducing a gasified Al raw material into the chamber and a Cu raw material supply system for introducing a gasified Cu raw material into the chamber. The Al/Cu multilayered film is formed by repeating a series of steps consisting of introducing the Al raw material gas into the chamber, depositing the Al film on the semiconductor wafer W by a CVD method, followed by generating a plasma in the chamber in which the Cu raw material gas has been introduced and depositing the Cu film on the semiconductor wafer W by a CVD method. The Al/Cu multilayered film thus obtained is subjected to a heating treatment (annealing), thereby forming a desired Al/Cu multilayered film.

Abstract: A semiconductor device fabricating method includes a preparatory process that brings a first source gas containing tungsten atoms into contact with a workpiece and that does not bring a second source gas containing nitrogen atoms into contact with the workpiece, and a film forming process that forms a tungsten nitride film on the workpiece by using the first and the second source gases so as to fabricate a semiconductor device. The semiconductor device fabricating method is capable of preventing the tungsten nitride film from peeling off from a layer underlying the same when the tungsten nitride film is subjected to heat treatment.

Abstract: A semiconductor device includes at least one interlevel insulating film, a storage electrode, a capacitor insulating film, a plate electrode, and a protective film. The interlevel insulating film is arranged on a semiconductor substrate. The storage electrode is made of a metal material and arranged on the interlevel insulating film. The capacitor insulating film is made of an insulating metal oxide and arranged on the storage electrode. The plate electrode is made of tungsten nitride and arranged on the capacitor insulating film. The protective film is arranged on the plate electrode to suppress outward diffusion of nitrogen from the plate electrode. A method of manufacturing the semiconductor device is also disclosed.

Abstract: In a semiconductor device manufacturing method, an interlevel insulating film is formed on a silicon substrate. A trench is formed in the interlevel insulating film. A lower underlying film made of a tungsten-based material is formed by thermal chemical vapor deposition to cover a bottom surface and side surface of the trench. An upper underlying film made of a tungsten-based material is formed by thermal chemical vapor deposition on an entire region on the lower underlying film. A copper film made of copper fills the trench. The upper underlying film is formed in accordance with thermal chemical vapor deposition by supplying a tungsten source gas and the other source gas such that the other source gas is supplied in an amount lager than that of the tungsten source gas. The lower underlying film is formed in accordance with thermal chemical vapor deposition by increasing a content of the tungsten source gas to be larger than to that of the other source gas in formation of the lower underlying film.

Abstract: A semiconductor device includes an interlevel insulating film, a contact plug, a barrier film, a first electrode, a capacitor insulating file, and a second electrode. The interlevel insulating film is formed on a semiconductor substrate. The contact plug extends through the interlevel insulating film and is formed from a conductive material. The barrier film is formed from a tungsten-based material on the upper surface of the contact plug. The first electrode is connected to the contact plug via the barrier film and formed from a metal material on the interlevel insulating film. The capacitor insulating film is formed from an insulating metal oxide on the first electrode. The second electrode is insulated by the capacitor insulating film and formed on the surface of the first electrode.

Abstract: The present invention provides a CVD apparatus and a CVD method for use in forming an Al/Cu multilayered film. The Al/Cu multilayered film is formed in the CVD apparatus comprising a chamber for placing a semiconductor wafer W, a susceptor for mounting the semiconductor wafer W thereon, an Al raw material supply system for introducing a gasified Al raw material into the chamber and a Cu raw material supply system for introducing a gasified Cu raw material into the chamber. The Al/Cu multilayered film is formed by repeating a series of steps consisting of introducing the Al raw material gas into the chamber, depositing the Al film on the semiconductor wafer W by a CVD method, followed by generating a plasma in the chamber in which the Cu raw material gas has been introduced and depositing the Cu film on the semiconductor wafer W by a CVD method. The Al/Cu multilayered film thus obtained is subjected to a heating treatment (annealing), thereby forming a desired Al/Cu multilayered film.