Patents by Inventor Hidehiro Fujiwara

Hidehiro Fujiwara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210043253
    Abstract: A circuit includes a memory array, a write circuit configured to store data in memory cells of the memory array, a read circuit configured to retrieve the stored data from the memory cells of the memory array, and a computation circuit configured to perform one or more logic operations on the retrieved stored data. The memory array is positioned between the write circuit and the read circuit.
    Type: Application
    Filed: October 22, 2020
    Publication date: February 11, 2021
    Inventors: Yen-Huei CHEN, Hung-Jen LIAO, Jonathan Tsung-Yung CHANG, Hidehiro FUJIWARA
  • Patent number: 10892008
    Abstract: A memory macro system may be provided. The memory macro system may comprise a first segment, a second segment, a first WL, and a second WL. The first segment may comprise a first plurality of memory cells. The second segment may comprise a second plurality of memory cells. The first segment may be positioned over the second segment. The first WL may correspond to the first segment and the second WL may correspond to the second segment. The first WL and the second WL may be configured to be activated in one cycle.
    Type: Grant
    Filed: June 7, 2019
    Date of Patent: January 12, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hidehiro Fujiwara, Hsien-Yu Pan, Chih-Yu Lin, Yen-Huei Chen, Wei-Chang Zhao
  • Patent number: 10885973
    Abstract: A memory device includes: a memory cell array having a plurality of memory cells, wherein each of the plurality of memory cells includes a first port; a first control circuit disposed on a first side of the memory cell array and arranged to electrically connect to the plurality of first ports; and a second control circuit disposed on a second side of the memory cell array and arranged to electrically connect to the plurality of first ports; wherein the second side is opposite to the first side of the memory cell array.
    Type: Grant
    Filed: July 16, 2019
    Date of Patent: January 5, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Hidehiro Fujiwara, Yen-Huei Chen
  • Publication number: 20200411063
    Abstract: A semiconductor chip is provided. The semiconductor chip includes a memory cell and a logic cell disposed aside the memory cell, and includes signal and ground lines with the memory and logic cells located therebetween. The memory cell includes first and second active structures extending along a first direction, and includes a storage transmission gate line, first through third gate lines and a read transmission gate line extending along a second direction. The storage transmission gate line includes first and second line segments, which respectively extends across the active structures. The first through third gate lines continuously extend across the first and second active structures. The read transmission gate line includes third and fourth line segments, which respectively extend across the active structures. The first through third gate lines are located between the storage and read transmission gate lines.
    Type: Application
    Filed: June 27, 2019
    Publication date: December 31, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hidehiro Fujiwara, Hsien-Yu Pan, Chih-Yu Lin, Yen-Huei Chen, Wei-Chang Zhao
  • Publication number: 20200411084
    Abstract: The present disclosure describes embodiments of a write assist circuit. The write assist circuit can include a control circuit and a voltage generator. The control circuit can be configured to receive memory address information associated with a memory write operation for memory cells. The voltage generator can be configured to provide a reference voltage to one or more bitlines coupled to the memory cells. The voltage generator can include two capacitive elements, where during the memory write operation, (i) one of the capacitive elements can be configured to couple the reference voltage to a first negative voltage, and (ii) based on the memory address information, both capacitive elements can be configured to cumulatively couple the reference voltage to a second negative voltage that is lower than the first negative voltage.
    Type: Application
    Filed: August 3, 2020
    Publication date: December 31, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hidehiro FUJIWARA, Chih-Yu LIN, Sahil Preet SINGH, Hsien-Yu PAN, Yen-Huei CHEN, Hung-Jen LIAO
  • Patent number: 10878894
    Abstract: A memory device includes memory cells and a control circuit. Each memory cell includes a first inverter, a second inverter, a first transistor and a second transistor. The first and second inverters are cross-coupled between a first data node and a second data node. The first transistor has a first control terminal coupled to a wordline, a first connection terminal coupled to a bitline, and a second connection terminal. The second transistor has a second control terminal, a third connection terminal and a fourth connection terminal. The second control terminal is coupled to the first data node. The third connection terminal is coupled to the second connection terminal. The control circuit is coupled to the fourth connection terminal, and is configured to, when the bitline is selected, adjust a voltage level at the fourth connection terminal in response to activation of the wordline.
    Type: Grant
    Filed: July 24, 2019
    Date of Patent: December 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Hidehiro Fujiwara, Haruki Mori, Chih-Yu Lin, Yen-Huei Chen
  • Patent number: 10872644
    Abstract: The present disclosure describes various exemplary memory storage devices that can be programmed to bypass one or more memory cells in a bypass mode of operation. The various exemplary memory storage devices can adjust, for example, pull-up or pull-down, the electronic data as the electronic data passes through these exemplary memory storage devices in the bypass mode of operation. In some situations, the various exemplary memory storage devices may introduce an unwanted bias into the electronic data as the electronic data passes through these exemplary memory storage devices in the bypass mode of operation. The various exemplary memory storage devices can pull-down the electronic data and/or pull-up the electronic data as the electronic data is passing through these exemplary memory storage devices in the bypass mode of operation to compensate for this unwanted bias.
    Type: Grant
    Filed: July 3, 2019
    Date of Patent: December 22, 2020
    Inventors: Hidehiro Fujiwara, Yen-Huei Chen
  • Patent number: 10854282
    Abstract: In some embodiments, a semiconductor memory device includes an array of semiconductor memory cells arranged in rows and columns. The array includes a first segment of memory cells and a second segment of memory cells. A first pair of complementary local bit lines extend over the first segment of memory cells and is coupled to multiple memory cells along a first column within the first segment of memory cells. A second pair of complementary local bit lines extend over the second segment of memory cells and is coupled to multiple memory cells along the first column within the second segment of memory cells. A pair of switches is arranged between the first and second segments of memory cells. The pair of switches is configured to selectively couple the first pair of complementary local bit lines in series with the second pair of complementary local bit lines.
    Type: Grant
    Filed: November 7, 2019
    Date of Patent: December 1, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Mahmut Sinangil, Hidehiro Fujiwara, Hung-Jen Liao, Jonathan Tsung-Yung Chang, Yen-Huei Chen, Sahil Preet Singh
  • Publication number: 20200372951
    Abstract: Some embodiments relate to an SRAM cell layout including upper and lower cell edges and left and right cell edges. A first power rail extends generally in parallel with and lies along the left cell edge or the right cell edge. The first power rail is coupled to a first power supply. A second power rail extends generally in parallel with the first power rail and is arranged equidistantly between the left and right cell edges. A first bitline extends in parallel with the first power rail and the second power rail and is arranged to a first side of the second power rail. A second bitline, which is complementary to the first bitline, extends in parallel with the first power rail and the second power rail and is arranged to a second side of the second power rail.
    Type: Application
    Filed: August 12, 2020
    Publication date: November 26, 2020
    Inventors: Hidehiro Fujiwara, Hung-Jen Liao, Hsien-Yu Pan, Yen-Huei Chen, Mahmut Sinangil
  • Publication number: 20200372950
    Abstract: A semiconductor memory device includes: a column of segments, each segment including bit cells; a local write bit (LWB) line; a local write bit_bar (LWB_bar) line; a global write bit (GWB) line; a global write bit_bar (GWBL_bar) line; each of the bit cells being connected correspondingly between the LWB and LWB_bar lines; and a distributed write driving arrangement including a global write driver connected between the GWB line and the LWB line and between the GWB_bar line and the LWB_bar line; and a local write driver included in each segment, each local write driver being connected between the GWB line and the LWB line and between the GWB_bar line and the LWB_bar line; and wherein: the global write driver and each local write driver is connected between the GWB line and the LWB line and between the GWB_bar line and the LWB_bar line.
    Type: Application
    Filed: August 12, 2020
    Publication date: November 26, 2020
    Inventors: Hidehiro FUJIWARA, Hung-Jen LIAO, Li-Wen WANG, Jonathan Tsung-Yung CHANG, Yen-Huei CHEN
  • Patent number: 10839894
    Abstract: A circuit includes a memory array, a write circuit configured to store data in memory cells of the memory array, a read circuit configured to retrieve the stored data from the memory cells of the memory array, and a computation circuit configured to perform one or more logic operations on the retrieved stored data. The memory array is positioned between the write circuit and the read circuit.
    Type: Grant
    Filed: May 7, 2019
    Date of Patent: November 17, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Yen-Huei Chen, Hidehiro Fujiwara, Hung-Jen Liao, Jonathan Tsung-Yung Chang
  • Patent number: 10832765
    Abstract: A read assist circuit is disclosed that selectively provides read assistance to a number of memory cells during a read operation of the number of memory cells. The read assist circuit includes a voltage divider circuit and a number of write line driver circuits. The voltage divider circuit is configured to voltage-divide a power supply voltage and provide a source write line voltage at an output of the voltage divider circuit to the number of write line driver circuits. Each write line driver circuit is configured to receive the source write line voltage and selectively apply the source write line voltage to a corresponding write line according to a corresponding individual enable signal that controls each write driver circuit. Further, each write line driver circuit is coupled to a corresponding memory cell of the number of memory cells via the corresponding write line so that the corresponding write line provides a corresponding write line voltage to provide read assistance during the read operation.
    Type: Grant
    Filed: April 5, 2019
    Date of Patent: November 10, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hidehiro Fujiwara, Hung-Jen Liao, Hsien-Yu Pan, Chih-Yu Lin, Yen-Huei Chen, Sahil Preet Singh
  • Publication number: 20200321054
    Abstract: A cell structure is disclosed. The cell structure includes a first unit comprising a first group of transistors and a first data latch, a second unit comprising a second group of transistors and a second data latch a read port unit comprising a plurality of p-type transistors, a search line and a complementary search line, the search line and the complementary search line function as input of the cell structure, and a master line, the master line functions as an output of the cell structure, the first unit is coupled to the second unit, both the first and the second units are coupled to the read port unit. According to some embodiments, the first data latch comprises a first and a second p-type transistors, a first and a second n-type transistors.
    Type: Application
    Filed: June 24, 2020
    Publication date: October 8, 2020
    Inventors: Hidehiro Fujiwara, Hung-Jen Liao, Hsien-Yu Pan, Chih-Yu Lin, Yen-Huei Chen, Chien-Chen Lin
  • Patent number: 10783955
    Abstract: A circuit includes a column of memory cells, a first read data line coupled exclusively with a first subset of memory cells of the column of memory cells, a second read data line coupled exclusively with a second subset of memory cells of the column of memory cells, and a plurality of read word lines. Each read word line of the plurality of read word lines is coupled with a memory cell of the first subset of memory cells and with a memory cell of the second subset of memory cells.
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: September 22, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hidehiro Fujiwara, Li-Wen Wang, Yen-Huei Chen, Hung-Jen Liao
  • Patent number: 10770131
    Abstract: Some embodiments relate to an SRAM cell layout including upper and lower cell edges and left and right cell edges. A first power rail extends generally in parallel with and lies along the left cell edge or the right cell edge. The first power rail is coupled to a first power supply. A second power rail extends generally in parallel with the first power rail and is arranged equidistantly between the left and right cell edges. A first bitline extends in parallel with the first power rail and the second power rail and is arranged to a first side of the second power rail. A second bitline, which is complementary to the first bitline, extends in parallel with the first power rail and the second power rail and is arranged to a second side of the second power rail.
    Type: Grant
    Filed: April 5, 2019
    Date of Patent: September 8, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hidehiro Fujiwara, Hung-Jen Liao, Hsien-Yu Pan, Yen-Huei Chen, Mahmut Sinangil
  • Patent number: 10755768
    Abstract: A semiconductor memory device includes: a local write bit (LWB) line; a local write bit_bar (LWB_bar) line; a global write bit (GWB) line; a global write bit_bar (GWBL_bar) line; a column of segments, each segment including bit cells; each of the bit cells including a latch circuit and first and second pass gates connecting the corresponding LWB and LWB_bar lines to the latch circuit; and a distributed write driving arrangement. The distributed write driving arrangement includes: a global write driver including a first inverter connected between the GWB line and the LWB line, and a second inverter connected between the GWB_bar line and the LWB_bar line; and a local write driver included at an interior of each segment, each local write driver including a third inverter connected between the GWB line and the LWB line; and a fourth inverter connected between the GWB_bar line and the LWB_bar line.
    Type: Grant
    Filed: July 3, 2019
    Date of Patent: August 25, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hidehiro Fujiwara, Hung-Jen Liao, Li-Wen Wang, Jonathan Tsung-Yung Chang, Yen-Huei Chen
  • Patent number: 10734066
    Abstract: A write assist circuit can include a control circuit and a voltage generator. The control circuit can be configured to receive memory address information associated with a memory write operation for memory cells. The voltage generator can be configured to provide a reference voltage to one or more bitlines coupled to the memory cells. The voltage generator can include two capacitive elements, where during the memory write operation, (i) one of the capacitive elements can be configured to couple the reference voltage to a first negative voltage, and (ii) based on the memory address information, both capacitive elements can be configured to cumulatively couple the reference voltage to a second negative voltage that is lower than the first negative voltage.
    Type: Grant
    Filed: November 1, 2017
    Date of Patent: August 4, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hidehiro Fujiwara, Chih-Yu Lin, Sahil Preet Singh, Hsien-Yu Pan, Yen-Huei Chen, Hung-Jen Liao
  • Patent number: 10714181
    Abstract: A cell structure is disclosed. The cell structure includes a first unit comprising a first group of transistors and a first data latch, a second unit comprising a second group of transistors and a second data latch a read port unit comprising a plurality of p-type transistors, a search line and a complementary search line, the search line and the complementary search line function as input of the cell structure, and a master line, the master line functions as an output of the cell structure, the first unit is coupled to the second unit, both the first and the second units are coupled to the read port unit. According to some embodiments, the first data latch comprises a first and a second p-type transistors, a first and a second n-type transistors.
    Type: Grant
    Filed: October 31, 2017
    Date of Patent: July 14, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hidehiro Fujiwara, Hung-Jen Liao, Hsien-Yu Pan, Chih-Yu Lin, Yen-Huei Chen, Chien-Chen Lin
  • Patent number: 10706934
    Abstract: A data storage device can detect for a failure in decoding of an x-bit row address and/or a y-bit column of an (x+y)-bit address. The data storage device decodes the x-bit row address and/or the y-bit column address to provide wordlines (WLs) and/or bitlines (BLs) to access one or more cells from among a memory array of the data storage device. The data storage device compares one or more subsets of the WLs and/or of the BLs to each other to detect for the failure. The data storage device determines the failure is present in the decoding of the x-bit row address and/or the y-bit column of the (x+y)-bit address when one or more WL and/or BL from among the one or more subsets of the WLs and/or the BLs differ.
    Type: Grant
    Filed: July 12, 2019
    Date of Patent: July 7, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hidehiro Fujiwara, Ching-Wei Wu
  • Publication number: 20200168286
    Abstract: A method, of detecting an address decoding error of a semiconductor device, includes: decoding an original address, with an address decoder of the semiconductor device, to form a corresponding decoded address; recoding the decoded address, with an encoder of the semiconductor device, to form a recoded address; making a comparison, with a comparator of the semiconductor device, of the recoded address and the original address; and detecting an address decoding error based on the comparison.
    Type: Application
    Filed: January 30, 2020
    Publication date: May 28, 2020
    Inventors: Hidehiro FUJIWARA, Ching-Wei WU, Chun-Hao CHANG