Patents by Inventor Hideki Hirayama

Hideki Hirayama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240060870
    Abstract: Disclosed is an information processing method to be executed by a computer, for analysis performed by a flow cytometer capable of acquiring a test result through a test using an antibody reagent, the information processing method including: acquiring a first test result obtained through a first test performed by the flow cytometer with respect to a first specimen of a subject; acquiring a second test result obtained through a second test different from the first test with respect to a second specimen of the subject; and displaying the first test result and the second test result in association with each other.
    Type: Application
    Filed: August 11, 2023
    Publication date: February 22, 2024
    Applicant: Sysmex Corporation
    Inventors: Takashi Karino, Hideki Hirayama
  • Publication number: 20230391398
    Abstract: A vehicle: finds a common central point at which a difference between a distance from a current position of a first tire and a distance from a target position of the first tire is within a predetermined range and a difference between a distance from a current position of a second tire and a distance from a target position of the second tire is within a predetermined range; and sets a steering angle of each of a plurality of tires so that the tire will be oriented in a direction of a tangent to a clearance circle whose center is the common central point or oriented in a direction whose angle difference from the direction of the tangent is within a predetermined range.
    Type: Application
    Filed: July 8, 2021
    Publication date: December 7, 2023
    Applicant: JFE STEEL CORPORATION
    Inventors: Hideki HIRAYAMA, Yusuke KANETA, Shinji NANBA, Haruhisa SAKAI, Toshiyuki KOHARA
  • Publication number: 20230221121
    Abstract: A heavy goods vehicle includes a displacement calculator that calculates a displacement by multiplying an arc length per unit rotation angle of the outer circumference of a specified tire by the first physical quantity, a vehicle position estimator that estimates a vehicle position using the displacement, and a memory that stores a correlation between a second physical quantity corresponding to a loading weight and an arc length per predetermined rotation angle at the outer circumference of the specified tire. The displacement calculator refers to the correlation to calculate a current arc length per unit rotation angle at the outer circumference of the specified tire from the second physical quantity corresponding to the loading weight, and calculates the displacement by multiplying the first physical quantity detected by the rotation amount detector by the current arc length per unit rotation angle.
    Type: Application
    Filed: April 21, 2021
    Publication date: July 13, 2023
    Applicant: JFE STEEL CORPORATION
    Inventors: Hideki HIRAYAMA, Yusuke KANETA, Shigeki KUMAGAI, Shinji NANBA, Toshiyuki KOHARA, Shuei TANAKA, Haruhisa SAKAI
  • Patent number: 11600969
    Abstract: In order to provide a QCL element operating in the near-infrared wavelength range, the present disclosure provides a quantum cascade laser element 1000 having a semiconductor superlattice structure (QCL structure 100) sandwiched between a pair of conductive sections 20 and 30. The semiconductor superlattice structure serves as an active region that emits electromagnetic waves. The active region has a plurality of unit structures 10U that are stacked on top of each other. Each unit structure includes four well layers 10W1-10W4 of a composition of AlxGa1?xN, separated from each other by barrier layers 10B1-10B5 of a composition of AlyGa1?yN with 0?x<y?1. Both of the conductive sections in the pair of conductive sections have a refractive index lower than that of the active region in which doped TCO inserted as a key role.
    Type: Grant
    Filed: April 2, 2021
    Date of Patent: March 7, 2023
    Assignee: RIKEN
    Inventors: Li Wang, Hideki Hirayama
  • Publication number: 20220221461
    Abstract: Disclosed is a specimen measurement system including: a specimen measuring device that measures a specimen; a determination unit that determines whether or not the specimen is to be measured by a flow cytometer, based on a measurement result of the specimen measuring device.
    Type: Application
    Filed: March 30, 2022
    Publication date: July 14, 2022
    Applicant: SYSMEX CORPORATION
    Inventors: Takaaki NAGAI, Hideki HIRAYAMA, Hiroo TATSUTANI, Tomohiro TSUJI
  • Publication number: 20220170841
    Abstract: A detection method according to one or more embodiments may include transporting a rack holding a reaction vessel along a first axis toward a sample dispensing position, linearly moving the sample dispensing pipette above the rack along a second axis intersecting the first axis and dispensing a sample into the reaction vessel located at the sample dispensing position, transporting the rack along the first axis toward a reagent dispensing position; linearly moving a reagent dispensing pipette above the rack along a third axis intersecting the first axis, and dispensing a reagent into the reaction vessel located at the reagent dispensing position, and detecting a detection target in a measurement specimen prepared from the sample and the reagent.
    Type: Application
    Filed: November 29, 2021
    Publication date: June 2, 2022
    Applicant: SYSMEX CORPORATION
    Inventors: Masatsugu OZASA, Daiki FUJIWARA, Daiki MITA, Takaaki OKAJIMA, Hideki HIRAYAMA
  • Patent number: 11346841
    Abstract: Disclosed is a specimen measurement system including: a specimen measuring device that measures a specimen; a determination unit that determines whether or not the specimen is to be measured by a flow cytometer, based on a measurement result of the specimen measuring device.
    Type: Grant
    Filed: September 24, 2019
    Date of Patent: May 31, 2022
    Assignee: SYSMEX CORPORATION
    Inventors: Takaaki Nagai, Hideki Hirayama, Hiroo Tatsutani, Tomohiro Tsuji
  • Publication number: 20220155329
    Abstract: The specimen analyzer includes: an input unit which receives an input of subject attribute information; an analysis unit which performs measurement of a specimen collected from a subject, and which performs analysis of the specimen based on a measurement result and the subject attribute information received by the input unit; and a controller which causes the analysis unit to be incapable of analyzing the specimen unless the input of the subject attribute information is performed with the input uni.
    Type: Application
    Filed: January 28, 2022
    Publication date: May 19, 2022
    Applicant: Sysmex Corporation
    Inventors: Seiji TAKEMOTO, Takeshi KOMOTO, Hideki HIRAYAMA, Takashi YOSHIDA, James AUSDENMOORE
  • Patent number: 11309454
    Abstract: A deep ultraviolet LED with a design wavelength ?, including a reflecting electrode layer (Au), a metal layer (Ni), a p-GaN contact layer, a p-block layer made of a p-AlGaN layer, an i-guide layer made of an AlN layer, a multi-quantum well layer, an n-AlGaN contact layer, a u-AlGaN layer, an AlN template, and a sapphire substrate that are arranged in this order from a side opposite to the sapphire substrate, in which the thickness of the p-block layer is 52 to 56 nm, a two-dimensional reflecting photonic crystal periodic structure having a plurality of voids is provided in a region from the interface between the metal layer and the p-GaN contact layer to a position not beyond the interface between the p-GaN contact layer and the p-block layer in the thickness direction of the p-GaN contact layer, the distance from an end face of each of the voids in the direction of the sapphire substrate to the interface between the multi-quantum well layer and the i-guide layer satisfies ?/2n1Deff (where ? is the design wav
    Type: Grant
    Filed: January 25, 2019
    Date of Patent: April 19, 2022
    Assignees: Marubun Corporation, Shibaura Machine Co., Ltd., RIKEN, ULVAC, Inc., Tokyo Ohka Kogyo Co., Ltd., Nippon Tungsten Co., Ltd., Dai Nippon Printing Co., Ltd., Dowa Holdings Co., Ltd.
    Inventors: Yukio Kashima, Eriko Matsuura, Mitsunori Kokubo, Takaharu Tashiro, Hideki Hirayama, Noritoshi Maeda, Masafumi Jo, Ryuichiro Kamimura, Yamato Osada, Kanji Furuta, Takeshi Iwai, Yohei Aoyama, Yasushi Iwaisako, Tsugumi Nagano, Yasuhiro Watanabe
  • Patent number: 11268969
    Abstract: The specimen analyzer includes: an input unit which receives an input of subject attribute information; an analysis unit which performs measurement of a specimen collected from a subject, and which performs analysis of the specimen based on a measurement result and the subject attribute information received by the input unit; and a controller which causes the analysis unit to be incapable of analyzing the specimen unless the input of the subject attribute information is performed with the input unit.
    Type: Grant
    Filed: May 31, 2017
    Date of Patent: March 8, 2022
    Assignee: SYSMEX Corporation
    Inventors: Seiji Takemoto, Takeshi Komoto, Hideki Hirayama, Takashi Yoshida, James Ausdenmoore
  • Patent number: 11249096
    Abstract: A specimen analyzer includes: an analysis unit which analyzes a specimen collected from a subject and generates an analysis result including a component amount in the specimen; an output unit which outputs the analysis result; and a controller which causes the output unit to output or not to output the component amount based on a comparison between the component amount and a determination reference value.
    Type: Grant
    Filed: May 31, 2017
    Date of Patent: February 15, 2022
    Assignee: SYSMEX CORPORATION
    Inventors: Seiji Takemoto, Takeshi Komoto, Hideki Hirayama, Takashi Yoshida, James Ausdenmoore
  • Publication number: 20210313774
    Abstract: In order to provide a QCL element operating in the near-infrared wavelength range, the present disclosure provides a quantum cascade laser element 1000 having a semiconductor superlattice structure (QCL structure 100) sandwiched between a pair of conductive sections 20 and 30. The semiconductor superlattice structure serves as an active region that emits electromagnetic waves. The active region has a plurality of unit structures 10U that are stacked on top of each other. Each unit structure includes four well layers 10W1-10W4 of a composition of AlxGa1-xN, separated from each other by barrier layers 10B1-10B5 of a composition of AlyGa1-yN with 0?x<y?1. Both of the conductive sections in the pair of conductive sections have a refractive index lower than that of the active region in which doped TCO inserted as a key role.
    Type: Application
    Filed: April 2, 2021
    Publication date: October 7, 2021
    Inventors: Li WANG, Hideki HIRAYAMA
  • Patent number: 10950751
    Abstract: Provided is a deep ultraviolet LED with a design wavelength ?, including a reflecting electrode layer, an ultra-thin metal layer, and a p-type contact layer that are arranged in this order from a side opposite to a substrate; and a hemispherical lens bonded to a rear surface of the substrate on a side of the p-type contact layer, the hemispherical lens being transparent to light with the wavelength ?. The refractive index of the hemispherical lens is greater than or equal to the average value of the refractive index of the substrate and the refractive index of air and is less than or equal to the refractive index of the substrate. The hemispherical lens has a radius that is greater than or equal to the radius of an inscribed circle of the substrate and is about equal to the radius of a circumscribed circle of the substrate.
    Type: Grant
    Filed: April 28, 2020
    Date of Patent: March 16, 2021
    Assignees: Marubun Corporation, Toshiba Kikai Kabushiki Kaisha, RIKEN, ULVAC, INC., Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Yukio Kashima, Eriko Matsuura, Mitsunori Kokubo, Takaharu Tashiro, Hideki Hirayama, Ryuichiro Kamimura, Yamato Osada, Toshiro Morita
  • Publication number: 20210036186
    Abstract: A deep ultraviolet LED with a design wavelength ?, including a reflecting electrode layer (Au), a metal layer (Ni), a p-GaN contact layer, a p-block layer made of a p-AlGaN layer, an i-guide layer made of an AlN layer, a multi-quantum well layer, an n-AlGaN contact layer, a u-AlGaN layer, an AlN template, and a sapphire substrate that are arranged in this order from a side opposite to the sapphire substrate, in which the thickness of the p-block layer is 52 to 56 nm, a two-dimensional reflecting photonic crystal periodic structure having a plurality of voids is provided in a region from the interface between the metal layer and the p-GaN contact layer to a position not beyond the interface between the p-GaN contact layer and the p-block layer in the thickness direction of the p-GaN contact layer, the distance from an end face of each of the voids in the direction of the sapphire substrate to the interface between the multi-quantum well layer and the i-guide layer satisfies ?/2n1Deff (where ? is the design wav
    Type: Application
    Filed: January 25, 2019
    Publication date: February 4, 2021
    Inventors: Yukio KASHIMA, Eriko MATSUURA, Mitsunori KOKUBO, Takaharu TASHIRO, Hideki HIRAYAMA, Noritoshi MAEDA, Masafumi JO, Ryuichiro KAMIMURA, Yamato OSADA, Kanji FURUTA, Takeshi IWAI, Yohei AOYAMA, Yasushi IWAISAKO, Tsugumi NAGANO, Yasuhiro WATANABE
  • Patent number: 10879423
    Abstract: An ultraviolet light-emitting element includes: a multilayer stack in which an n-type AlGaN layer, a light-emitting layer, a first p-type AlGaN layer, and a second p-type AlGaN layer are arranged in this order; a negative electrode; and a positive electrode. The first p-type AlGaN layer has a larger Al composition ratio than first AlGaN layers serving as well layers. The second p-type AlGaN layer has a larger Al composition ratio than the first AlGaN layers. The first p-type AlGaN layer and the second p-type AlGaN layer both contain Mg. The second p-type AlGaN layer has a higher maximum Mg concentration than the first p-type AlGaN layer. The second p-type AlGaN layer includes a region where an Mg concentration increases in a thickness direction thereof as a distance from the first p-type AlGaN layer increases in the thickness direction.
    Type: Grant
    Filed: November 1, 2016
    Date of Patent: December 29, 2020
    Assignees: PANASONIC CORPORATION, RIKEN
    Inventors: Takayoshi Takano, Takuya Mino, Jun Sakai, Norimichi Noguchi, Hideki Hirayama
  • Publication number: 20200313041
    Abstract: Provided is a deep ultraviolet LED with a design wavelength ?, including a reflecting electrode layer, an ultra-thin metal layer, and a p-type contact layer that are arranged in this order from a side opposite to a substrate; and a hemispherical lens bonded to a rear surface of the substrate on a side of the p-type contact layer, the hemispherical lens being transparent to light with the wavelength ?. The refractive index of the hemispherical lens is greater than or equal to the average value of the refractive index of the substrate and the refractive index of air and is less than or equal to the refractive index of the substrate. The hemispherical lens has a radius that is greater than or equal to the radius of an inscribed circle of the substrate and is about equal to the radius of a circumscribed circle of the substrate.
    Type: Application
    Filed: April 28, 2020
    Publication date: October 1, 2020
    Inventors: Yukio KASHIMA, Eriko MATSUURA, Mitsunori KOKUBO, Takaharu TASHIRO, Hideki HIRAYAMA, Ryuichiro KAMIMURA, Yamato OSADA, Toshiro MORITA
  • Patent number: 10697089
    Abstract: An epitaxial substrate includes: a single crystal substrate including projections arranged in an array on a plane. Each projection has a conical or pyramidal shape tapered in a normal direction to the plane. The AlN layer includes: a first AlN crystal covering the plane and the projections with tips of the projections being exposed; second AlN crystals protruding from the tips of the projections along the normal direction and each having a shape of a column whose cross-sectional area increases as a distance from a tip of a corresponding projection increases; and a third AlN crystal as a layer interconnecting ends of the second AlN crystals, opposite the single crystal substrate.
    Type: Grant
    Filed: November 1, 2016
    Date of Patent: June 30, 2020
    Assignees: PANASONIC CORPORATION, RIKEN
    Inventors: Norimichi Noguchi, Takuya Mino, Takayoshi Takano, Jun Sakai, Hitomichi Takano, Kenji Tsubaki, Hideki Hirayama
  • Patent number: 10680134
    Abstract: Provided is a deep ultraviolet LED with a design wavelength ?, including a reflecting electrode layer, an ultra-thin metal layer, and a p-type contact layer that are arranged in this order from a side opposite to a substrate; and a hemispherical lens bonded to a rear surface of the substrate on a side of the p-type contact layer, the hemispherical lens being transparent to light with the wavelength ?. The refractive index of the hemispherical lens is greater than or equal to the average value of the refractive index of the substrate and the refractive index of air and is less than or equal to the refractive index of the substrate. The hemispherical lens has a radius that is greater than or equal to the radius of an inscribed circle of the substrate and is about equal to the radius of a circumscribed circle of the substrate.
    Type: Grant
    Filed: September 2, 2016
    Date of Patent: June 9, 2020
    Assignees: Marubun Corporation, Toshiba Kikai Kabushiki Kaisha, RIKEN, ULVAC, INC., Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Yukio Kashima, Eriko Matsuura, Mitsunori Kokubo, Takaharu Tashiro, Hideki Hirayama, Ryuichiro Kamimura, Yamato Osada, Toshiro Morita
  • Patent number: 10666018
    Abstract: To increase the maximum operating temperature of quantum cascade lasers of a terahertz region, a quantum cascade laser element 1000 according to the present invention has a semiconductor superlattice structure sandwiched between a pair of electrodes, the semiconductor superlattice structure has an active region 100 that emits electromagnetic waves of a frequency in a THz region under an external voltage applied through the pair of electrodes for operation, and the active region 100 has plural unit structures 10U, each of which is repeatedly layered over one another. Each of the unit structures 10U has a double quantum well structure formed of a first well layer 10W1 and a second well layer 10W2 separated from each other by a barrier layer, the first well layer 10W1 and the second well layer 10W2 have compositions different from each other, and when the external voltage is not being applied, potential energy for electrons in the second well layer 10W2 is lower than that in the first well layer 10W1.
    Type: Grant
    Filed: February 28, 2019
    Date of Patent: May 26, 2020
    Assignee: RIKEN
    Inventors: Li Wang, Tsung-Tse Lin, Ke Wang, Hideki Hirayama
  • Publication number: 20200103427
    Abstract: This specimen analyzer includes: an analysis unit which analyzes a specimen collected from a subject; a manual input unit which receives an input of information by manual operation; an information read unit which receives an input of information by reading an information record section provided in a consumable; and a controller which does not permit an input of information on the consumable with the manual input unit, and permits an input of the information on the consumable with the information read unit.
    Type: Application
    Filed: November 4, 2019
    Publication date: April 2, 2020
    Applicant: Sysmex Corporation
    Inventors: Seiji TAKEMOTO, Takeshi KOMOTO, Hideki HIRAYAMA, Takashi YOSHIDA, James AUSDENMOORE