Abstract: To improve light extraction efficiency of a deep ultraviolet light-emitting diode (DUVLED), a typical LED element has a single crystal substrate made of sapphire or AlN, The ultraviolet layer is arranged as a film stack having an n-type conductive layer, a recombination layer, and a p-type conductive layer. A stack of a p-type contact layer and a reflective electrode is disposed on the p-type conductive layer. The ultraviolet emission layer and a p-type contact layer are made of mixed crystal of AlN and GaN. The transmittance for the emission wavelength of the p-type contact layer is increased, and the light extraction efficiency is improved. Also an LED element whose p-type contact layer is configured in a layered structure and whose reflective electrode is patterned is provided. Moreover, an electric appliance having such LED elements is provided.

Abstract: To improve light extraction efficiency of a deep ultraviolet light-emitting diode (DUVLED), a typical LED element has a single crystal substrate made of sapphire or AlN, The ultraviolet layer is arranged as a film stack having an n-type conductive layer, a recombination layer, and a p-type conductive layer. A stack of a p-type contact layer and a reflective electrode is disposed on the p-type conductive layer. The ultraviolet emission layer and a p-type contact layer are made of mixed crystal of AlN and GaN. The transmittance for the emission wavelength of the p-type contact layer is increased, and the light extraction efficiency is improved. Also an LED element whose p-type contact layer is configured in a layered structure and whose reflective electrode is patterned is provided. Moreover, an electric appliance having such LED elements is provided.

Abstract: The epitaxial wafer includes a silicon substrate, an aluminum nitride thin film feeing a main surface of the silicon substrate, and an aluminum deposit between the silicon substrate and the aluminum nitride thin film so as to inhibit formation of silicon nitride. In the method for producing the epitaxial wafer, to form the aluminum deposit on the main surface of the silicon substrate, trimethyl aluminum is supplied into a reactor after a substrate temperature defined as a temperature of the silicon substrate is adjusted to a first predetermined temperature equal to or mare than. 300° C. and less than 1200° C. Thereafter, to form the aluminum nitride thin film facing the main surface of the silicon substrate, trimethyl aluminum and ammonia are supplied into the reactor after the substrate temperature is adjusted to a second predetermined temperature equal to or more than 1200° C. and equal to or less than 1400° C.

Abstract: The bit length reducing unit reduces the bit length of an operand expressed by a floating-point number and outputs the operand to a computing unit. The bit length increasing unit increases the bit length of the result value of operation represented by the floating-point number inputted from the computing unit and restores the original bit length. The bit length reducing unit discards a preset number of higher-order bits of the exponent part of the floating-point number and at the same time adds a positive or negative offset value to the exponent part with the higher-order bits discarded, according to an application to be executed by the computing unit. The bit length increasing unit restores the bits discarded by the bit length reducing unit 11 from the exponent part of the floating-point number and at the same time subtracts an offset value from the exponent part.

Abstract: Disclosed is a method of detecting filarial larvae in blood. The method comprises preparing a measurement sample from a blood sample collected from an animal; flowing the prepared measurement sample through a flow cell; irradiating light on the measurement sample flowing through the flow cell; detecting light given off from the irradiated measurement sample; and detecting filarial larvae contained in the measurement sample based on characteristic parameter of the detected light.

Abstract: The nitride semiconductor light-emitting element of the invention has a stacked structure of a buffer layer, an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer, on one surface side of a single crystal substrate of a sapphire substrate. A nitride semiconductor multilayer structure as the buffer layer includes: a plurality of island-like nuclei formed of AlN and formed on the one surface of the single crystal substrate; a first nitride semiconductor layer formed of an AlN layer and formed on the one surface side of the single crystal substrate so as to fill gaps between adjacent nuclei and to cover all the nuclei; and a second nitride semiconductor layer formed of an AlN layer and formed on the first nitride semiconductor layer. The nitride semiconductor multilayer structure is characterized in that the density of the nuclei is less than 6×109 nuclei cm?2.

Abstract: An Al0.95Ga0.05N:Mg (25 nm) single electron barrier can stop electrons having energy levels lower than the barrier height. Meanwhile, a 5-layer Al0.95Ga0.05N (4 nm)/Al0.77Ga0.23N (2 nm) MQB has quantum-mechanical effects so as to stop electrons having energy levels higher than the barrier height. Thus, electrons having energy levels higher than the barrier height can be blocked by making use of multiquantum MQB effects upon electrons. The present inventors found that the use of an MQB allows blocking of electrons having higher energy levels than those blocked using an SQB. In particular, for InAlGaN-based ultraviolet elements, AlGaN having the composition similar to that of AlN is used; however, it is difficult to realize a barrier having the barrier height exceeding that of AlN. Therefore, MQB effects are very important.

Abstract: [PROBLEM] To manufacture a quantum cascade laser (QCL) element having a reduced threshold current density (Jth) and an increased maximum operating temperature (Tmax). [SOLUTION] One embodiment of the present invention provides a THz-QCL element (1000) with a QCL structure (100), which is a semiconductor superlattice (100A) sandwiched between a pair of electrodes (20, 30). The semiconductor superlattice (100A) (QCL structure (100)) is provided with an active region (10) that emits THz range electromagnetic waves due to the transition of electrons between sub-bands during application of a voltage to the pair of electrodes, for example. The active region (10) has repeating unit structures (10U) of a thickness, which includes sets of a well layer (10W) and a barrier layer (10B) alternatingly laminated with each other, wherein the well layer (10W) is made of AlxGa1-xAs (where 0<x<1), which is a mixed crystal of AlAs and GaAs.

Abstract: To raise the upper limit of the temperature range in which a quantum cascade laser (QCL) element for THz range operates at a single frequency. In a quantum cascade laser element in one embodiment of the present invention, each unit structure 10U in the active region 10 is provided with the first to fourth well layers 10W1-10W4 that are stacked in this order and separated from one another by at least one barrier layer 10B. During application of a first bias electric field for lasing, the structure of electronic energy levels has a reception, upper lasing, lower lasing, and depopulation levels and emits electromagnetic waves at a first frequency. During application of a second bias electric field that is weaker than the first bias electric field, the overlap integral is 0.15 or less between electronic wavefunctions for the unnecessary upper lasing and unnecessary lower lasing levels, thereby stimulated emissions of electromagnetic waves are suppressed at frequencies other than the first frequency.

Abstract: To raise the upper limit of the temperature range in which a quantum cascade laser (QCL) element for THz range operates at a single frequency. In a quantum cascade laser element in one embodiment of the present invention, each unit structure 10U in the active region 10 is provided with the first to fourth well layers 10W1-10W4 that are stacked in this order and separated from one another by at least one bather layer 10B. During application of a first bias electric field for lasing, the structure of electronic energy levels has a reception, upper lasing, lower lasing, and depopulation levels and emits electromagnetic waves at a first frequency. During application of a second bias electric field that is weaker than the first bias electric field, the overlap integral is 0.15 or less between electronic wavefunctions for the unnecessary upper lasing and unnecessary lower lasing levels, thereby stimulated emissions of electromagnetic waves are suppressed at frequencies other than the first frequency.

Abstract: A sample analyzer comprising: a measurement section for measuring a sample of an animal; a memory for storing a measurement data by the measurement section; an analysis section for analyzing the measurement data stored on the memory in accordance with a first analysis condition corresponding to a previous setting of a species of an animal; and a selection receiver for receiving a selection of a species of an animal, which is different from the species of the previous setting, after analyzing the measurement data by the analysis section; wherein the analysis section analyzes the measurement data stored on the memory in accordance with a second analysis condition corresponding to the selection of a species of an animal when the selection receiver receives the selection of a species of an animal, is disclosed. A sample analyzing method is also disclosed.

Abstract: An Al0.95Ga0.05N:Mg (25 nm) single electron barrier can stop electrons having energy levels lower than the barrier height. Meanwhile, a 5-layer Al0.95Ga0.05N (4 nm)/Al0.77Ga0.23N (2 nm) MQB has quantum-mechanical effects so as to stop electrons having energy levels higher than the barrier height. Thus, electrons having energy levels higher than the barrier height can be blocked by making use of multiquantum MQB effects upon electrons. The present inventors found that the use of an MQB allows blocking of electrons having higher energy levels than those blocked using an SQB. In particular, for InAlGaN-based ultraviolet elements, AlGaN having the composition similar to that of AlN is used; however, it is difficult to realize a barrier having the barrier height exceeding that of AlN. Therefore, MQB effects are very important.

Abstract: In a method of manufacture for a nitride semiconductor light emitting element including: a monocrystalline substrate; and an AlN layer; and a first nitride semiconductor layer of a first electrical conductivity type; and a light emitting layer made of an AlGaN-based material; and a second nitride semiconductor layer of a second electrical conductivity type, a step of forming the AlN layer includes: a first step of supplying an Al source gas and a N source gas into the reactor to generate a group of MN crystal nuclei having Al-polarity to be a part of the AlN layer on the surface of the monocrystalline substrate; and a second step of supplying the Al source gas and the N source gas into the reactor to form the AlN layer, after the first step.

Abstract: An actuator control apparatus includes an analog-digital conversion circuit, a servo circuit, a sampling circuit, and a driving circuit. The analog-digital conversion circuit is configured to sample a position detection signal with a first sampling period, convert the sampled signal into a digital signal, and output the digital signal, the position detection signal outputted from a position sensor corresponding to a position of a control target. The servo circuit is configured to calculate a displacement amount, by which the control target is to be displaced by an actuator, and output first servo control data corresponding to the calculated displacement amount, based on the position detection signal converted into the digital signal. The sampling circuit is configured to linearly interpolate the first servo control data, and output second servo control data sampled with a second sampling period shorter than the first sampling period.

Abstract: A digital filter has a plurality of filters, wherein each filter performs coefficient multiplication and delay processing for an input signal and an output signal, obtains the output signal from the input signal, and includes a plurality of coefficient multipliers for multiplying a signal by a predetermined coefficient. The digital filter also includes a plurality of delay circuits for delaying a signal, and an adder for adding a plurality of signals. A first RAM stores a plurality of sets of coefficient data for a plurality of coefficient multipliers of the first filter and stores delay data for the delay circuit of the second filter. A second RAM stores a plurality of sets of coefficient data for a plurality of coefficient multipliers of the second filter and stores delay data for the delay circuit of the first filter.

Abstract: An Al0.95Ga0.05N:Mg (25 nm) single electron barrier can stop electrons having energy levels lower than the barrier height. Meanwhile, a 5-layer Al0.95Ga0.05N (4 nm)/Al0.77Ga0.23N (2 nm) MQB has quantum-mechanical effects so as to stop electrons having energy levels higher than the barrier height. Thus, electrons having energy levels higher than the barrier height can be blocked by making use of multiquantum MQB effects upon electrons. The present inventors found that the use of an MQB allows blocking of electrons having higher energy levels than those blocked using an SQB. In particular, for InAlGaN-based ultraviolet elements, AlGaN having the composition similar to that of AlN is used; however, it is difficult to realize a barrier having the barrier height exceeding that of AlN. Therefore, MQB effects are very important.

Abstract: A semiconductor light emitting element including, in a light extraction layer thereof, a photonic crystal periodic structure including two systems (structures) with different refractive indices. An interface between the two systems (structures) satisfies Bragg scattering conditions, and the photonic crystal periodic structure has a photonic band gap.

Abstract: Performing data processing more effectively for camera shake correction is desirable. Movement of an image-capturing device is compensated on the basis of displacement velocity of the image-capturing device detected by a displacement velocity detector and position regarding a focus adjustment member of the image-capturing device detected by a position detector. An input data format converter converts the displacement velocity detected at the displacement velocity detector from fixed-point format to floating-point format and converts the detected position of the focus member to floating-point data. Furthermore, a gyro filter uses data processing in floating-point format to calculate displacement data for a required amount the image-capturing device is to be displaced and a Hall filter uses data processing in floating-point format to generate drive data for the focus adjustment member. Then, the drive data in floating-point format from the Hall filter is converted to drive data in fixed-point format.

Abstract: [PROBLEM] To manufacture a quantum cascade laser (QCL) element having a reduced threshold current density (Jth) and an increased maximum operating temperature (Tmax). [SOLUTION] One embodiment of the present invention provides a THz-QCL element (1000) with a QCL structure (100), which is a semiconductor superlattice (100A) sandwiched between a pair of electrodes (20, 30). The semiconductor superlattice (100A) (QCL structure (100)) is provided with an active region (10) that emits THz range electromagnetic waves due to the transition of electrons between sub-bands during application of a voltage to the pair of electrodes, for example. The active region (10) has repeating unit structures (10U) of a thickness, which includes sets of a well layer (10W) and a barrier layer (10B) alternatingly laminated with each other, wherein the well layer (10W) is made of AlxGa1-xAs (where 0<x<1), which is a mixed crystal of AlAs and GaAs.

Abstract: An animal blood cell measuring apparatus comprising: a specimen preparation section for preparing a measurement specimen from blood of an animal; a characteristic information obtaining section for obtaining characteristic information indicating a characteristic of the measurement specimen, from the measurement specimen prepared by the specimen preparation section; and a controller configured for performing operations comprising: (a) classifying aggregate reticulocytes contained in the blood from other blood cells, based on the characteristic information obtained by the characteristic information obtaining section; and (b) outputting information regarding a number of the classified aggregate reticulocytes.