Abstract: A composite substrate for the formation of a light-emitting device, ensuring that a high-quality nitride-based light-emitting diode can be easily formed on its top surface and the obtained substrate-attached light-emitting diode functions as a light-emitting device capable of emitting light for an arbitrary color such as white, is provided.

Abstract: Analyzers are described that includes a mode selector for selecting one measurement mode from said plurality of measurement modes; a display for displaying a screen; and a display controller for displaying on said screen a picture representing contents of the measurement mode selected by said mode selector.

Abstract: A first high-pass filter comprising a low-pass filter which allows only a frequency component of an input signal less than or equal to a first frequency to pass, a latch unit which latches an output of a low-pass filter according to a control signal, and a calculating unit which outputs a difference between an input signal and an output of the latch unit are provided on an image stabilization circuit. When latching in the latch unit is released, a held value of the latch unit is stepwise changed to the output value of the low-pass filter. Such a first high-pass filter is used in a centering process of an optical element.

Abstract: A semiconductor device with an anti-shake function includes a logic chip having a digital circuit which obtains a value for vibration of an apparatus based on a vibration detection signal supplied from a vibration detection element to generate a correction signal. The logic chip includes a correction signal processing unit which generates the correction signal, and a control signal output unit which outputs a vibration control signal in accordance with the correction signal to a vibration correction control unit which executes vibration correction control for an optical component in accordance with vibration.

Abstract: In an adder circuit, a sine wave is added to a compensation signal which is generated based on a position detection signal of a member to be driven and for compensating a position of a lens which is the member to be driven. An absolute value integrating circuit integrates absolute values of signals before and after the adder circuit adds the sine wave. The two obtained integrated values are compared by a comparator circuit, and a gain adjusting circuit adjusts a gain of an amplifier which amplifies the compensation signal so that the two integrated values are equal to each other.

Abstract: An image stabilization control circuit controls an optical element driving element that moves an optical element provided in an imaging apparatus based on an output signal of a vibration detection element provided in the imaging apparatus. The image stabilization control circuit includes a high-pass filter that removes a low-frequency component from an output signal of the vibration detection element. A movement amount calculation circuit calculates a movement amount of the imaging apparatus based on an output signal of the high-pass filter. A servo circuit generates a correction signal for correcting the position of the optical element based on an output signal of the movement amount calculation circuit and outputs the correction signal to the optical element driving element. The movement amount calculation circuit includes a digital filter circuit and a register. The digital filter circuit performs filter processing based on a filter coefficient stored in the register.

Abstract: The nitride semi-conductive light emitting layer in this invention comprises a single crystal substrate 1 for epitaxial growth, a first buffer layer 2, an n-type nitride semi-conductive layer 3, a second buffer layer 4, a third buffer layer 5, a light emitting layer 6, and a p-type nitride semi-conductive layer 7. The first buffer layer 2 is laminated to a top side of the single crystal substrate 1. The n-type nitride semi-conductive layer 3 is laminated to a top side of the first buffer layer 2. The third buffer layer 5 is laminated to a top side of the n-type nitride semi-conductive layer 3 with the second buffer layer 4 being interposed therebetween. The light emitting layer 6 is laminated to a top side of the third buffer layer 5. The p-type nitride semi-conductive layer 7 is laminated to a top side of the light emitting layer 6.

Abstract: To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission, a method of manufacturing the light-emitting device involves forming a first AlGaN layer of a first conductivity type on a side of a first main surface of a nitride semiconductor substrate, forming a light-emitting layer including an InAlGaN quaternary alloy on the first AlGaN layer, forming a second AlGaN layer of a second conductivity type on the light-emitting layer, and removing the nitride semiconductor substrate after forming the second AlGaN layer.

Abstract: An Al0.95Ga0.05N:Mg (25 nm) single electron barrier can stop electrons having energy levels lower than the barrier height. Meanwhile, a 5-layer Al0.95Ga0.05N (4 nm)/Al0.77Ga0.23N (2 nm) MQB has quantum-mechanical effects so as to stop electrons having energy levels higher than the barrier height. Thus, electrons having energy levels higher than the barrier height can be blocked by making use of multiquantum MQB effects upon electrons. The present inventors found that the use of an MQB allows blocking of electrons having higher energy levels than those blocked using an SQB. In particular, for InAlGaN-based ultraviolet elements, AlGaN having the composition similar to that of AlN is used; however, it is difficult to realize a barrier having the barrier height exceeding that of AlN. Therefore, MQB effects are very important.

Abstract: The present invention provides an inexpensive substrate which can realize m-plane growth of a crystal by vapor phase growth. In a sapphire substrate, an off-angle plane slanted from an m-plane by a predetermined very small angle is prepared as a growth surface, which is a template of the crystal, at the time of growing a crystal of GaN or the like, by a polishing process to prepare a stepwise substrate comprising steps and terraces. According to the above-described configuration, even if an inexpensive sapphire substrate, which normally does not form an m-plane (nonpolar plane) GaN film, is used as a substrate for crystal growth, the following advantages can be attained.

Abstract: The nitride semiconductor light-emitting element of the invention has a stacked structure of a buffer layer, an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer, on one surface side of a single crystal substrate of a sapphire substrate. A nitride semiconductor multilayer structure as the buffer layer includes: a plurality of island-like nuclei formed of AlN and formed on the one surface of the single crystal substrate; a first nitride semiconductor layer formed of an AlN layer and formed on the one surface side of the single crystal substrate so as to fill gaps between adjacent nuclei and to cover all the nuclei; and a second nitride semiconductor layer formed of an AlN layer and formed on the first nitride semiconductor layer.

Abstract: In a process of fabricating a nitride nitride semi-conductor layer of AlaGabIn(1-a-b)N(0<a<1, 0<b<1, 1?a?b>0), the AlGaInN layer is grown at a growth rate less than 0.09 ?m/h according to the metal organic vapor phase epitaxy (MOPVE) method. The AlGaInN layer fabricated by the process in the present invention exhibits a high quality with low defect, and increases internal quantum yield.

Abstract: The bit length reducing unit reduces the bit length of an operand expressed by a floating-point number and outputs the operand to a computing unit. The bit length increasing unit increases the bit length of the result value of operation represented by the floating-point number inputted from the computing unit and restores the original bit length. The bit length reducing unit discards a preset number of higher-order bits of the exponent part of the floating-point number and at the same time adds a positive or negative offset value to the exponent part with the higher-order bits discarded, according to an application to be executed by the computing unit. The bit length increasing unit restores the bits discarded by the bit length reducing unit 11 from the exponent part of the floating-point number and at the same time subtracts an offset value from the exponent part.

Abstract: Devices and techniques related to UV light-emitting devices that can be implemented in ways that improve the light-emitting efficiency of an UV light-emitting device using a group III nitride semiconductor.

Abstract: An internal CPU, a vibration control equalizer for processing an output signal of a vibration detector for detecting vibration of an imaging apparatus and calculating a vibration signal for determining a driving amount for an optical component on the basis of vibration of the imaging apparatus, a position control equalizer for calculating a position signal for determining a driving amount for the optical component on the basis of position of the optical component, and a control switching section for switching between the internal CPU and an external control circuit for the imaging apparatus for control of the vibration control equalizer and the position control equalizer.

Abstract: A nitride semi-conductor light emitting device has a p-type nitride semi-conductor layer 7, an n-type nitride semi-conductor layer 3, and a light emission layer 6 which is interposed between the p-type nitride semi-conductor layer 7 and the n-type nitride semi-conductor layer 3. The light emission layer 6 has a quantum well structure with a barrier layer 6b and a well layer 6a. The barrier layer 6b is formed of AlaGabIn(1-a-b)N (0<a<1, 0<b<1, 1?a?b>0), and contains a first impurity at a concentration of A greater than zero. The well layer 6a is formed of AlcGadIn(1-c-d)N (0<c<1, c<a, 0<d<1, 1?c?d>0), and contains a second impurity at a concentration of B equal to or greater than zero. In the nitride semi-conductor light emitting device of the present invention, the concentration of A is larger than that of B, in order that the barrier layer 6b has a concentration of oxygen smaller than that in the well layer 6a.

Abstract: A composite substrate for the formation of a light-emitting device, ensuring that a high-quality nitride-based light-emitting diode can be easily formed on its top surface and the obtained substrate-attached light-emitting diode functions as a light-emitting device capable of emitting light for an arbitrary color such as white, is provided.

Abstract: A digital filter has a plurality of filters, wherein each filter performs coefficient multiplication and delay processing for an input signal and an output signal, obtains the output signal from the input signal, and includes a plurality of coefficient multipliers for multiplying a signal by a predetermined coefficient. The digital filter also includes a plurality of delay circuits for delaying a signal, and an adder for adding a plurality of signals. A first RAM stores a plurality of sets of coefficient data for a plurality of coefficient multipliers of the first filter and stores delay data for the delay circuit of the second filter. A second RAM stores a plurality of sets of coefficient data for a plurality of coefficient multipliers of the second filter and stores delay data for the delay circuit of the first filter.

Abstract: In an adder circuit, a sine wave is added to a compensation signal which is generated based on a position detection signal of a member to be driven and for compensating a position of a lens which is the member to be driven. An absolute value integrating circuit integrates absolute values of signals before and after the adder circuit adds the sine wave. The two obtained integrated values are compared by a comparator circuit, and a gain adjusting circuit adjusts a gain of an amplifier which amplifies the compensation signal so that the two integrated values are equal to each other.

Abstract: A nitride semiconductor light-emitting element 11 is one for generating light containing a wavelength component in an ultraviolet region. The nitride semiconductor light-emitting element 11 has an active region 17 including InX1AlY1Ga1-X1-Y1N well layers 13 (1>X1>0 and 1>Y1>0) and InX2AlY2Ga1-X2-Y2N barrier layers 15 (1>X2>0 and 1>Y2>0). An energy gap difference Eg1 between the InX1AlY1Ga1-X1-Y1N well layers 13 and the InX2AlY2Ga1-X2-Y2N barrier layers 15 is not less than 2.4×10?20 J nor more than 4.8×10?20 J.