Abstract: A deep ultraviolet LED with a design wavelength of ? is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of ?; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap.

Abstract: An ultraviolet light emitting element includes a light emitting layer, a cap layer, an electron barrier layer. The light emitting layer has a multi-quantum well structure including barrier layers each including a first AlGaN layer and well layers each including a second AlGaN layer. The electron barrier layer includes at least one first p-type AlGaN layer and at least one second p-type AlGaN layer. The cap layer is located between the first p-type AlGaN layer and one of the well layers closest to the first p-type AlGaN layer. The cap layer is a third AlGaN layer having an Al composition ratio greater than an Al composition ratio of each of the well layers and less than an Al composition ratio of the first p-type AlGaN layer. The cap layer has a thickness of greater than or equal to 1 nm and less than or equal to 7 nm.

Abstract: A deep ultraviolet LED with a design wavelength of ? is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of ?; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap.

Abstract: To fabricate a practically useful non-polar AlN buffer layer on a sapphire crystal plate and manufacture a UV light-emitting device on a non-polar crystal substrate by adopting the crystal substrate as an example, an embodiment of the present invention provides a crystal substrate 1D comprising an r-plane sapphire crystal plate 10 and an AlN buffer layer 20D of non-polar orientation. The AlN buffer layer comprises a surface protection layer 22 and a smoothing layer 26. The surface protection layer suppresses roughness increase on a surface of the AlN buffer layer, and the smoothing layer makes the surface of the AlN buffer layer a smoothed surface. Also provided is a crystal substrate 11 comprising an AlN buffer layer 20T to which a dislocation blocking layer 24 for reducing crystallographic defects is added between the surface protection layer 22 and the smoothing layer 26. In another embodiment a deep UV light-emitting device is provided.

Abstract: A deep ultraviolet LED with a design wavelength of ? is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of ?; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap.

Abstract: An ultraviolet LED having increased light extraction efficiency includes: a single crystal sapphire substrate on which an array of protruding portions are formed; an AlN crystal buffer layer formed on the sapphire substrate; and an ultraviolet light emitting layer, in contact with the buffer layer, formed into a layered stack including an n-type conductive layer, a recombination layer, and a p-type conductive layer, in order from the buffer layer. The buffer layer includes a pillar array section and an integration section wherein pillars in the array are connected with one another. Each pillar extends from a protruding portion of the sapphire substrate, in a direction normal to one surface thereof. The pillars are separated from one another in the plane of the surface by a gap G. Light emitted from the ultraviolet light emitting layer is extracted to the outside through the pillar array section and the sapphire substrate.

Abstract: An ultraviolet light emitting element includes a light emitting layer, a cap layer, an electron barrier layer. The light emitting layer has a multi-quantum well structure including barrier layers each including a first AlGaN layer and well layers each including a second AlGaN layer. The electron barrier layer includes at least one first p-type AlGaN layer and at least one second p-type AlGaN layer. The cap layer is located between the first p-type AlGaN layer and one of the well layers closest to the first p-type AlGaN layer. The cap layer is a third AlGaN layer having an Al composition ratio greater than an Al composition ratio of each of the well layers and less than an Al composition ratio of the first p-type AlGaN layer. The cap layer has a thickness of greater than or equal to 1 nm and less than or equal to 7 nm.

Abstract: A deep ultraviolet LED with a design wavelength of ? is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of ?; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap.

Abstract: Disclosed is a method of detecting filarial larvae in blood. The method comprises preparing a measurement sample from a blood sample collected from an animal; flowing the prepared measurement sample through a flow cell; irradiating light on the measurement sample flowing through the flow cell; detecting light given off from the irradiated measurement sample; and detecting filarial larvae contained in the measurement sample based on characteristic parameter of the detected light.

Abstract: A nitride semiconductor template includes a Ga2O3 substrate, a buffer layer that includes as a main component AlN and is formed on the Ga2O3 substrate, a first nitride semiconductor layer that includes as a main component AlxGa1-xN (0.2<x?1) and is formed on the buffer layer, a second nitride semiconductor layer that includes as a main component AlyGa1-yN (0.2?y?0.55, y<x) and is formed on the first nitride semiconductor layer, and a third nitride semiconductor layer that is formed on the second nitride semiconductor layer and includes a multilayer structure including an Inu1Alv1Gaw1N (0.02?u1?0.03, u1+v1+w1=1) layer and Inu2Alv2Gaw2N (0.02?u2?0.03, u2+v2+w2=1, v1+0.05?v2?v1+0.2) layers on both sides of the Inu1Alv1Gaw1N layer.

Abstract: A nitride semiconductor template includes a Ga2O3 substrate, a buffer layer that includes as a main component AlN and is formed on the Ga2O3 substrate, a first nitride semiconductor layer that includes as a main component AlxGa1-xN (0.2<x?1) and is formed on the buffer layer, a second nitride semiconductor layer that includes as a main component AlyGa1-yN (0.2?y?0.55, y<x) and is formed on the first nitride semiconductor layer, and a third nitride semiconductor layer that is formed on the second nitride semiconductor layer and includes a multilayer structure including an Inu1Alv1Gaw1N (0.02?u1?0.03, u1+v1+w1=1) layer and Inu2Alv2Gaw2N (0.02?u2?0.03, u2+v2+w2=1, v1+0.05?v2?v1+0.2) layers on both sides of the Inu1Alv1Gaw1N layer.

Abstract: An actuator control apparatus includes an analog-digital conversion circuit, a servo circuit, a sampling circuit, and a driving circuit. The analog-digital conversion circuit is configured to sample a position detection signal with a first sampling period, convert the sampled signal into a digital signal, and output the digital signal, the position detection signal outputted from a position sensor corresponding to a position of a control target. The servo circuit is configured to calculate a displacement amount, by which the control target is to be displaced by an actuator, and output first servo control data corresponding to the calculated displacement amount, based on the position detection signal converted into the digital signal. The sampling circuit is configured to linearly interpolate the first servo control data, and output second servo control data sampled with a second sampling period shorter than the first sampling period.

Abstract: A terahertz quantum cascade laser (THz-QCL) element operable at an unexplored frequency is obtained. A crystal of a nitride semiconductor is used to fabricate a repeated set of unit structures into a super lattice. Each unit structure includes a first barrier layer, a first well layer, a second barrier layer, and a second well layer disposed in this order. An energy level structure for electrons under a bias electric field has a mediation level, an upper lasing level, and a lower lasing level. The energy value of the mediation level is close to the energy value of either an upper lasing level or a lower lasing level, each belonging to either the unit structure or the other unit structure adjacent thereto, and is separated from the energy value of the other level by at least the energy value of a longitudinal-optical (LO) phonon exhibited by the crystal.

Abstract: A semiconductor light emitting element including, in a light extraction layer thereof, a photonic crystal periodic structure including two systems (structures) with different refractive indices. An interface between the two systems (structures) satisfies Bragg scattering conditions, and the photonic crystal periodic structure has a photonic band gap.

Abstract: A deep ultraviolet LED with a design wavelength of ? is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer, and a p-type AlGaN layer that are sequentially stacked from a side opposite to a substrate, the p-type AlGaN layer being transparent to light with the wavelength of ?; and a photonic crystal periodic structure that penetrates at least the p-type GaN contact layer and the p-type AlGaN layer. The photonic crystal periodic structure has a photonic band gap.

Abstract: The present invention is to present a sample analyzer which is capable of displaying a particle distribution map of a measured sample and a reference particle distribution map so as to be visually compared without reducing a display area for displaying information other than the particle distribution map. The blood analyzer 1 comprises: a display 302; a measurement unit 2 for measuring a blood sample; and a controller 301 being configured to 1) generate a particle distribution map representing a distribution of the particles contained in the blood sample, based on measurement data obtained by the measurement unit 2; and 2) control the display 302 so as to display the particle distribution map of the blood sample at a predetermined display position and to display a reference particle distribution map at the predetermined display position so as to be visually compared with the particle distribution map of the blood sample.

Abstract: In a method of manufacture for a nitride semiconductor light emitting element including: a monocrystalline substrate; and an AlN layer; and a first nitride semiconductor layer of a first electrical conductivity type; and a light emitting layer made of an AlGaN-based material; and a second nitride semiconductor layer of a second electrical conductivity type, a step of forming the AlN layer includes: a first step of supplying an Al source gas and a N source gas into the reactor to generate a group of AlN crystal nuclei having Al-polarity to be a part of the AlN layer on the surface of the monocrystalline substrate; and a second step of supplying the Al source gas and the N source gas into the reactor to form the AlN layer, after the first step.

Abstract: A terahertz quantum cascade laser (THz-QCL) element operable at an unexplored frequency is obtained. A crystal of a nitride semiconductor is used to fabricate a repeated set of unit structures into a super lattice. Each unit structure includes a first barrier layer, a first well layer, a second barrier layer, and a second well layer disposed in this order. An energy level structure for electrons under a bias electric field has a mediation level, an upper lasing level, and a lower lasing level. The energy value of the mediation level is close to the energy value of either an upper lasing level or a lower lasing level, each belonging to either the unit structure or the other unit structure adjacent thereto, and is separated from the energy value of the other level by at least the energy value of a longitudinal-optical (LO) phonon exhibited by the crystal.

Abstract: A semiconductor light emitting element with a design wavelength of ?, comprising a photonic crystal periodic structure having two structures with different refractive indices at each of one or more interfaces between layers that form the light emitting element. The period a and the radius R that are parameters of each of the one or more periodic structures and the design wavelength ? satisfy Bragg conditions. The ratio (R/a) between the period a and the radius R is a value determined so that a predetermined photonic band gap (PBG) for TE light becomes maximum for each periodic structure. The parameters of each periodic structure are determined so that light extraction efficiency of the entire semiconductor light emitting element with respect to light with the wavelength ? becomes maximum as a result of conducting a simulation analysis with a FDTD method using as variables the depth h of the periodic structure that is of greater than or equal to 0.

Abstract: An ultraviolet LED having increased light extraction efficiency includes: a single crystal sapphire substrate on which an array of protruding portions are formed; an AlN crystal buffer layer formed on the sapphire substrate; and an ultraviolet light emitting layer, in contact with the buffer layer, formed into a layered stack including an n-type conductive layer, a recombination layer, and a p-type conductive layer, in order from the buffer layer. The buffer layer includes a pillar array section and an integration section wherein pillars in the array are connected with one another. Each pillar extends from a protruding portion of the sapphire substrate, in a direction normal to one surface thereof. The pillars are separated from one another in the plane of the surface by a gap G. Light emitted from the ultraviolet light emitting layer is extracted to the outside through the pillar array section and the sapphire substrate.