Abstract: Performing data processing more effectively for camera shake correction is desirable. Movement of an image-capturing device is compensated on the basis of displacement velocity of the image-capturing device detected by a displacement velocity detector and position regarding a focus adjustment member of the image-capturing device detected by a position detector. An input data format converter converts the displacement velocity detected at the displacement velocity detector from fixed-point format to floating-point format and converts the detected position of the focus member to floating-point data. Furthermore, a gyro filter uses data processing in floating-point format to calculate displacement data for a required amount the image-capturing device is to be displaced and a Hall filter uses data processing in floating-point format to generate drive data for the focus adjustment member. Then, the drive data in floating-point format from the Hall filter is converted to drive data in fixed-point format.

Abstract: To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission, a method of manufacturing the light-emitting device involves forming a first AlGaN layer of a first conductivity type on a side of a first main surface of a nitride semiconductor substrate, forming a light-emitting layer including an InAlGaN quaternary alloy on the first AlGaN layer, forming a second AlGaN layer of a second conductivity type on the light-emitting layer, and removing the nitride semiconductor substrate after forming the second AlGaN layer.

Abstract: To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission and a manufacturing method thereof, the light-emitting device includes a GaN substrate and a light-emitting layer including an InAlGaN quaternary alloy on a side of a first main surface of GaN substrate.

Abstract: The nitride semi-conductive light emitting layer in this invention comprises a single crystal substrate 1 for epitaxial growth, a first buffer layer 2, an n-type nitride semi-conductive layer 3, a second buffer layer 4, a third buffer layer 5, a light emitting layer 6, and a p-type nitride semi-conductive layer 7. The first buffer layer 2 is laminated to a top side of the single crystal substrate 1. The n-type nitride semi-conductive layer 3 is laminated to a top side of the first buffer layer 2. The third buffer layer 5 is laminated to a top side of the n-type nitride semi-conductive layer 3 with the second buffer layer 4 being interposed therebetween. The light emitting layer 6 is laminated to a top side of the third buffer layer 5. The p-type nitride semi-conductive layer 7 is laminated to a top side of the light emitting layer 6.

Abstract: To provide an elemental technique for improving the emission intensity of deep ultraviolet light from a light emitting layer made of an AlGaInN-based material, in particular, an AlGaN-based material. First, an AlN layer is grown on a sapphire surface. The AlN layer is grown under a NH3-rich condition. The TMAl pulsed supply sequence includes growing an AlGaN layer for 10 seconds, interrupting the growth for 5 seconds to remove NH3, and then introducing TMAl at a flow rate of 1 sccm for 5 seconds. After that, the growth is interrupted again for 5 seconds. Defining this sequence as one growth cycle, five growth cycles are carried out. By such growth, an AlGaN layer having a polarity of richness in Al can be obtained. The above sequence is described only for illustrative purposes, and various variations are possible. In general, the Al polarity can be achieved by a process of repeating both growth interruption and supply of an Al source.

Abstract: To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission and a manufacturing method thereof, the light-emitting device includes a GaN substrate and a light-emitting layer including an InAlGaN quaternary alloy on a side of a first main surface of GaN substrate.

Abstract: An image stabilization control circuit of an image-capturing device prevents overflow of data in an integration process performed in a digital signal process on a signal outputted by a gyro-sensor. A gyro-filter receives, as an input, fixed-point format angular velocity data (D?) obtained by subjecting an output signal from the gyro-sensor to an analog-to-digital conversion. In the gyro-filter, an input format conversion circuit converts from fixed-point format to floating-point format. A camera shake vibration component is obtained from the floating-point format D?, is integrated, and data (D?) corresponding to an oscillation angle is generated. After a centering process is performed, D? is converted from floating-point format to fixed-point format by an output format conversion circuit, and outputted from the gyro-filter. A drive signal for driving an image stabilization mechanism is generated on the basis of the data outputted by the gyro-filter.

Abstract: A nitride semi-conductor light emitting device has a p-type nitride semi-conductor layer 7, an n-type nitride semi-conductor layer 3, and a light emission layer 6 which is interposed between the p-type nitride semi-conductor layer 7 and the n-type nitride semi-conductor layer 3. The light emission layer 6 has a quantum well structure with a barrier layer 6b and a well layer 6a. The barrier layer 6b is formed of AlaGabIn(1-a-b)N (0<a<1, 0<b<1, 1?a?b>0), and contains a first impurity at a concentration of A greater than zero. The well layer 6a is formed of AlcGadIn(1-c-d)N (0<c<1, c<a, 0<d<1, 1?c?d>0), and contains a second impurity at a concentration of B equal to or greater than zero. In the nitride semi-conductor light emitting device of the present invention, the concentration of A is larger than that of B, in order that the barrier layer 6b has a concentration of oxygen smaller than that in the well layer 6a.

Abstract: In a process of fabricating a nitride nitride semi-conductor layer of AlaGabIn(1-a-b)N (0<a<1, 0<b<1, 1?a?b>0), the AlGaInN layer is grown at a growth rate less than 0.09 ?m/h according to the metal organic vapor phase epitaxy (MOPVE) method. The AlGaInN layer fabricated by the process in the present invention exhibits a high quality with low defect, and increases internal quantum yield.

Abstract: A first high-pass filter comprising a low-pass filter which allows only a frequency component of an input signal less than or equal to a first frequency to pass, a latch unit which latches an output of a low-pass filter according to a control signal, and a calculating unit which outputs a difference between an input signal and an output of the latch unit are provided on an image stabilization circuit. When latching in the latch unit is released, a held value of the latch unit is stepwise changed to the output value of the low-pass filter. Such a first high-pass filter is used in a centering process of an optical element.

Abstract: Because of a large lattice mismatch between a sapphire substrate and a group III-V compound semiconductor, a good crystal is difficult to grow. A high-quality AlN buffer growth structure A on a sapphire substrate includes a sapphire (0001) substrate 1, an AlN nucleation layer 3 formed on the sapphire substrate 1, a pulsed supplied AlN layer 5 formed on the AlN nucleation layer 3, and a continuous growth AlN layer 7 formed on the pulsed supplied AlN layer 5. Formed on the continuous growth AlN layer 7 is at least one set of a pulsed supplied AlN layer 11 and a continuous growth AlN layer 15. The AlN layer 3 is grown in an initial nucleation mode which is a first growth mode by using an NH3 pulsed supply method. The pulsed supplied AlN layer 5 is formed by using NH3 pulsed supply in a low growth mode which is a second growth mode that increases a grain size and reduces dislocations and therefore is capable of reducing dislocations and burying the nucleation layer 3.

Abstract: An animal blood cell measuring apparatus comprising: a specimen preparation section for preparing a measurement specimen from blood of an animal; a characteristic information obtaining section for obtaining characteristic information indicating a characteristic of the measurement specimen, from the measurement specimen prepared by the specimen preparation section; and a controller configured for performing operations comprising: (a) classifying aggregate reticulocytes contained in the blood from other blood cells, based on the characteristic information obtained by the characteristic information obtaining section; and (b) outputting information regarding a number of the classified aggregate reticulocytes.

Abstract: Devices and techniques related to UV light-emitting devices that can be implemented in ways that improve the light-emitting efficiency of an UV light-emitting device using a group III nitride semiconductor.

Abstract: The present invention provides an inexpensive substrate which can realize m-plane growth of a crystal by vapor phase growth. In a sapphire substrate, an off-angle plane slanted from an m-plane by a predetermined very small angle is prepared as a growth surface, which is a template of the crystal, at the time of growing a crystal of GaN or the like, by a polishing process to prepare a stepwise substrate comprising steps and terraces. According to the above-described configuration, even if an inexpensive sapphire substrate, which normally does not form an m-plane (nonpolar plane) GaN film, is used as a substrate for crystal growth, the following advantages can be attained.

Abstract: To provide an elemental technique for improving the emission intensity of deep ultraviolet light from a light emitting layer made of an AlGaInN-based material, in particular, an AlGaN-based material. First, an AlN layer is grown on a sapphire surface. The AlN layer is grown under a NH3-rich condition. The TMAl pulsed supply sequence includes growing an AlGaN layer for 10 seconds, interrupting the growth for 5 seconds to remove NH3, and then introducing TMAl at a flow rate of 1 sccm for 5 seconds. After that, the growth is interrupted again for 5 seconds. Defining this sequence as one growth cycle, five growth cycles are carried out. By such growth, an AlGaN layer having a polarity of richness in Al can be obtained. The above sequence is described only for illustrative purposes, and various variations are possible. In general, the Al polarity can be achieved by a process of repeating both growth interruption and supply of an Al source.

Abstract: A semiconductor light emitting device includes an n-type nitride semiconductor layer 3 formed on one surface side of a single-crystal substrate 1 for epitaxial growth through a first buffer layer 2, an emission layer 5 formed on a surface side of the n-type nitride semiconductor layer 3, and a p-type nitride semiconductor layer 6 formed on a surface side of the emission layer 5. The emission layer 5 has an AlGaInN quantum well structure, and a second buffer layer 4 having the same composition as a barrier layer 5a of the emission layer 5 is provided between the n-type nitride semiconductor layer 3 and the emission layer 5. In the semiconductor light emitting device, it is possible to increase emission intensity of the ultraviolet radiation as compared with a conventional configuration while using AlGaInN as a material of the emission layer.

Abstract: An image stabilization control circuit of an image-capturing device prevents overflow of data in an integration process performed in a digital signal process on a signal outputted by a gyro-sensor. A gyro-filter receives, as an input, fixed-point format angular velocity data (D?) obtained by subjecting an output signal from the gyro-sensor to an analog-to-digital conversion. In the gyro-filter, an input format conversion circuit converts from fixed-point format to floating-point format. A camera shake vibration component is obtained from the floating-point format D?, is integrated, and data (D?) corresponding to an oscillation angle is generated. After a centering process is performed, D? is converted from floating-point format to fixed-point format by an output format conversion circuit, and outputted from the gyro-filter. A drive signal for driving an image stabilization mechanism is generated on the basis of the data outputted by the gyro-filter.

Abstract: An object is to provide an ultraviolet light-emitting device in which a p-type semiconductor which has high conductivity and an emission peak in ultraviolet region, and emits light efficiently is used. The p-type semiconductor is prepared by supplying a p-type impurity raw material at the same time or after starting supply of predetermined types of crystal raw materials, besides before starting supply of other types of crystal raw materials than the predetermined types of crystal raw materials in one cycle wherein all the types of crystal raw materials of the plural types of crystal raw materials are supplied in one time each in case of making crystal growth by supplying alternately the plural types of crystal raw materials in a pulsed manner.

Abstract: For the purpose of emitting light in an ultraviolet short-wavelength region having a wavelength of 360 nm or shorter, it is arranged in InAlGaN in such that a ratio of composition of In is 2% to 20%, a ratio of composition of Al is 10% to 90%, and a total of ratios of composition in In, Al, and Ga is 100%.

Abstract: Analyzers are described that includes a mode selector for selecting one measurement mode from said plurality of measurement modes; a display for displaying a screen; and a display controller for displaying on said screen a picture representing contents of the measurement mode selected by said mode selector.