Abstract: A film formation apparatus according to an embodiment includes: a film formation chamber performing film formation on a substrate; a cylindrical liner provided inside of a sidewall of the film formation chamber; a process-gas supply unit provided at a top of the film formation chamber and having a first gas ejection hole supplying a process gas to inside of the liner; a first heater provided outside the liner in the film formation chamber and heating the substrate from above; a second heater heating the substrate from below; and a shielding gas supply unit having a plurality of second gas ejection holes supplying a shielding gas to a position closer to a sidewall of the film formation chamber than a position of the first gas ejection hole.

Abstract: A vapor phase growth apparatus includes: a first supporter supporting a first substrate; a first heater heating the first substrate; a first gas feeder supplying a first process gas onto a surface of the first substrate; a first radiation thermometer measuring a first temperature on the surface of the first substrate, the first temperature taking no account of an effect of emissivity of the first substrate; a first thermometer acquiring an actual temperature of the first substrate; a first temperature controller controlling the actual temperature to be a predetermined temperature by using the first heater; a second supporter supporting a second substrate; a second heater heating the second substrate; a second radiation thermometer measuring a second temperature on a surface of the second substrate, the second temperature taking no account of an effect of emissivity of the second substrate; and a second temperature controller controlling the second heater based on the first temperature, the actual temperature,

Abstract: An azo pigment is provided which can be used as a coloring agent, etc. for use in paints, plastics, synthetic fibers, printing inks, and writing materials or for image recording or image displaying and which has performance of exhibiting high near infrared reflection/transparency, particularly when used as a heat-shielding paint, even in the case where the pigment has a dark color, and as a result, colored articles having the above-described properties are provided, and furthermore an article that is also useful as a printing ink in the security field is provided particularly when the pigment has a dark or black color. Specifically, an azo pigment is provided which is obtained through coupling reaction between a particular azo component and a particular coupling component, which has a plurality of chromophores of an azomethine group and of an azo group within a molecule, and in which the diazo component is a diazotized product of 3-(4-aminophenylimino)-1-oxo-4,5,6,7-tetrachroloisoindoline.

Abstract: A lateral electric field type liquid crystal display device includes substrates, liquid crystal put between the substrates, scan lines and data lines arranged on one of the substrates, and pixels each of whose boundary is defined by two scan lines and two data lines. In each pixel, a strip-shaped electrode and a common electrode are formed with an insulating film put thereamong, and the pixel electrode is arranged to extend close along one of the data lines. In each pixel, a part of the common electrode covering one of the data lines overlaps with the pixel electrode, the pixel electrode partially projects from the overlapping area, and a side edge of the projecting part of the pixel electrode is separated from a side edge of a part of the common electrode covering the other data line so as to generate a lateral electric field to drive the liquid crystal.

Abstract: A backlight unit includes an anisotropic sheet disposed between a rectangular display panel portion and a light source disposed directly behind the rectangular display panel portion. The anisotropic sheet is a sheet to transmit and diffuse an emitted light of the light source toward the rectangular display panel portion, and has a structure that makes the emitted light more widely diffuse in a direction along a long side of a display surface of the rectangular display panel portion than in a direction along a short side of the display surface of the rectangular display panel portion. The long side and the short side of the display surface are different lengths.

Abstract: To acquire a fine viewing angle property from oblique view fields in a lateral electric field type liquid crystal display device having liquid crystal initial alignment directions in two orthogonal directions. The absorption axis of the incident-side polarization plate and the absorption axis of the exit-side polarization plate are orthogonal to each other in both of the region I and the region II, and the liquid crystal layer, the in-cell retarder as an optical compensation layer, the A-plate, and the C-plate sandwiched therebetween are in parallel to either one of the absorption axes or orthogonal to the substrates. Therefore, the transmittance can be suppressed to be low and a fine black display can be acquired even when the display surface is viewed from the oblique view fields.

Abstract: To acquire a fine viewing angle property from oblique view fields in a lateral electric field type liquid crystal display device having liquid crystal initial alignment directions in two orthogonal directions. The absorption axis of the incident-side polarization plate and the absorption axis of the exit-side polarization plate are orthogonal to each other in both of the region I and the region II, and the liquid crystal layer, the in-cell retarder as an optical compensation layer, the A-plate, and the C-plate sandwiched therebetween are in parallel to either one of the absorption axes or orthogonal to the substrates. Therefore, the transmittance can be suppressed to be low and a fine black display can be acquired even when the display surface is viewed from the oblique view fields.

Abstract: A method of manufacturing a semiconductor device includes: forming an insulating film above a semiconductor substrate; forming a conductive film on the insulating film; forming a dielectric film on the conductive film; forming a plurality of upper electrodes at intervals on the dielectric film; forming a first protective insulating film on the upper electrodes and the dielectric film by a sputtering method; forming a second protective insulating film on the first protective insulating film by an atomic layer deposition method, thereby filling gaps of a grain boundary of the dielectric film with the second protective insulating film; and patterning the conductive film after the second protective insulating film is formed to provide a lower electrode.

Abstract: A display apparatus includes: a substrate having a first surface; a light source that is disposed to the first surface of the substrate; a display plate that is disposed adjacent to the first surface of the substrate; and a light block body that surrounds the light source between the substrate and the display plate. The light source includes a light source body that emits light, a light source base material that has a mount surface, the light source body being mounted to the mount surface, and a mold portion that transmits the light and covers a circumference of the light source body on the mount surface of the light source base material. The mount surface is positioned closer to the display plate than an end face of the light block body, the end face being adjacent to the substrate.

Abstract: In a silicon carbide semiconductor film forming apparatus, first to third gasses are introduced into first to third separation chambers through first to third inlets, respectively. The first and second gasses are silicon raw material including gas and carbon raw material including gas, and the third gas does not include silicon and carbon. The first and second gasses are independently supplied to growth space through first and second supply paths extending from the first and second separation chambers, respectively. The third gas is introduced through a third supply path from the third separation chamber between the first and second gasses.

Abstract: A vapor phase growth apparatus according to an embodiment includes n (n is an integer equal to or greater than 1) reaction chambers each processing a substrate under a pressure less than atmospheric pressure, a cassette chamber having a cassette holding portion capable of placing a cassette holding the substrate on the cassette holding portion, internal pressure of the cassette chamber being able to be reduced to a pressure less than the atmospheric pressure, a transferring chamber provided between the reaction chamber and the cassette chamber and transferring the substrate under a pressure less than the atmospheric pressure, and a substrate standby portion capable of simultaneously holding n or more substrates processed in the reaction chamber and provided in a region having a heat-resistant temperature of 500° C. or more, internal pressure of the region being able to be reduced to a pressure less than the atmospheric pressure.

Abstract: According to an embodiment, a particle beam treatment system includes a storage, an estimator, a target value generator, and a particle beam treatment device. The storage stores therein a respiratory movement model obtained by synchronizing amount of displacement of an affected area of a subject with a signal related to respiration of the subject and performing modeling. The estimator estimates, based on the measured signal related to respiration and the respiratory movement model, amount of displacement of the affected area corresponding to the measured signal. The target value generator generates a target value, which is used for performing movement control on a platform on which the subject is lying down, corresponding to the estimated amount of displacement of the affected area. The particle beam treatment device irradiates, with particle beams, the affected area of the subject on the platform subjected to movement control according to the target value.

Abstract: An in-vehicle audio apparatus includes: a base body that is arranged in a fixed state; a storage tray that is moved between a drawing-out position and a storing position with respect to the base body and inserts and takes out a music reproducing device at the drawing-out position; a pressing body that is moved in accordance with a moving position of the storage tray in a direction perpendicular to a moving direction of the storage tray and presses the music reproducing device that is inserted into the storage tray when the pressing body is moved to one side; and a bias spring that presses the pressing body to the one side.

Abstract: A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled.

Abstract: A tray moving mechanism includes: a unit base having an internal space formed as a containing space; and a tray movable between a retracted position in which the unit base is contained in the containing space and a projected position in which a music player formed in a substantially rectangular shape can be placed on the tray and in which a part of the tray is projected from the base unit, wherein the tray is moved with respect to the unit base such that the orientations of the tray with respect to the unit base in the retracted and projected positions are substantially 90 deg different from each other.

Abstract: A film forming apparatus according to an embodiment of the invention includes: a film forming chamber configured to form a film on a substrate; a susceptor configured to place the substrate thereon; a rotating part configured to rotate the susceptor; a heater configured to heat the substrate; and a gas supplier configured to supply process gases into the film forming chamber, wherein the susceptor includes: a ring-shaped outer circumferential susceptor supported by the rotating part; a holder provided at an inner circumferential portion of the outer circumferential susceptor, the holder configured to hold the substrate; a ring-shaped plate provided over the outer circumferential susceptor; and a cover member configured to cover a top surface and an outer circumferential surface of the plate and an outer circumferential surface of the outer circumferential susceptor.

Abstract: A combination meter including a first meter and a second meter, which are visible from a front side, and a half-silvered mirror disposed in front of the combination meter and having semi-transparent property are provided. Also, an image output device displays an image toward the half-silvered mirror is provided. The half-silvered mirror reflects the image displayed by the image output device to display a virtual image in front of the meter. Thus, the virtual image is overlappedly displayed with respect to the combination meter, whereby a use intuitively recognizes high priority information.

Abstract: It is an object of the present invention to provide a film-forming apparatus and a film-forming method that can prolong the lifetime of heaters used under high temperature conditions in an epitaxial growth technique. An inert gas discharge portion supplies an inert gas into the space containing the heater, gas is then discharged through the gas discharge portion without influence on the semiconductor substrate during film formation. It is therefore possible to prevent the reaction gas entering into the space containing the high-temperature heaters. This makes it possible to prevent a reaction between hydrogen gas contained in the reaction gas and SiC constituting the heaters. Therefore, it is possible to prevent carbon used as a base material of the heaters from being exposed due to the decomposition of SiC and then reacting with hydrogen gas. This makes it possible to prolong the lifetime of the heaters.