Abstract: Semiconductor device includes a well region formed in an active region of a semiconductor substrate, a gate electrode formed on the well region via a gate dielectric film, and a source region and a drain region formed in the well region. At the vicinity of both end portions of the active region in the first direction, a first region and a second region having the same conductivity type as the well region and having impurity concentration higher than that of the well region are formed in the well region. The first region and the second region are spaced from each other in a second direction perpendicular to the first direction, and at least a portion of each of them is located under the gate electrode. The first region and the second region are not formed at the center portion of the active region in the first direction.

Abstract: A signal transmission cable is provided with a conductor, an insulator covering around the conductor, a shield layer covering around the insulator, a sheath covering around the shield layer, and a plating base layer is provided between the insulator and the shield layer to cover around the insulator. The shield layer has a plating layer provided to cover the plating base layer to be in contact with an outer peripheral surface of the plating base layer. A surface roughness of an outer peripheral surface of the plating layer is less than a surface roughness of an inner peripheral surface of the plating layer.

Abstract: A semiconductor device includes a nitride semiconductor element, a first diode, and a second diode; the nitride semiconductor element includes a conductive mounting bed, a semiconductor substrate formed on the mounting bed, a first nitride semiconductor layer, a second nitride semiconductor layer, a first major electrode, a second major electrode, a first gate electrode, and a second gate electrode; the first diode includes a first anode electrode electrically connected to the mounting bed, and a first cathode electrode electrically connected to the first major electrode; and the second diode includes a second anode electrode electrically connected to the mounting bed, and a second cathode electrode electrically connected to the second major electrode.

Abstract: A semiconductor device of an embodiment includes a semiconductor layer, a first insulating film provided on the semiconductor layer, a first electrode film provided on the first insulating film, a second electrode film provided on the first electrode film, and a first field plate electrode provided on the second electrode film. A lower end of the first field plate electrode is located on a second surface of the first electrode film, the second surface being in contact with the second electrode film, rather than a first surface of the first electrode film, the first surface being in contact with the first insulating film.

Abstract: An electronic control unit is connected to a network in an in-vehicle network system. The electronic control unit includes a first control circuit and a second control circuit. The first control circuit is connected to the network via the second control circuit. The second control circuit performs a first determination process on a frame to determine conformity of the frame with a first rule. Upon determining that the frame conforms to the first rule, the second control circuit transmits the frame to the first control circuit. The first control circuit performs a second determination process on the frame to determine conformity of the frame with a second rule. The second rule is different from the first rule.

Abstract: A semiconductor device includes a first transistor, a first drive circuit including a second transistor, and a second drive circuit including a third transistor. The second transistor and the third transistor are connected in series; and a connection node of the second and third transistors is connected to a gate electrode of the first transistor. The first transistor, the second transistor, and the third transistor are normally-off MOS HEMTs formed in a first substrate that includes GaN. The first drive circuit charges a parasitic capacitance of the first transistor. The second drive circuit discharges the parasitic capacitance of the first transistor.

Abstract: Semiconductor device includes a well region formed in an active region of a semiconductor substrate, a gate electrode formed on the well region via a gate dielectric film, and a source region and a drain region formed in the well region. At the vicinity of both end portions of the active region in the first direction, a first region and a second region having the same conductivity type as the well region and having impurity concentration higher than that of the well region are formed in the well region. The first region and the second region are spaced from each other in a second direction perpendicular to the first direction, and at least a portion of each of them is located under the gate electrode. The first region and the second region are not formed at the center portion of the active region in the first direction.

Abstract: There is provided a substrate processing apparatus including: a processing chamber; a substrate support that is disposed in the processing chamber and holds a substrate; and a shower head facing the substrate support, the shower head including a shower plate formed with a gas flow path through which a gas is discharged, and a cooling plate holding and cooling the shower plate, and the cooling plate including a first plate having a gas distribution layer through which the gas is distributed, a second plate having a coolant passage through which a coolant is supplied and a gas diffusion space into which the gas distributed by the gas distribution layer is supplied, and a fastening member fastening the first plate and the second plate.

Abstract: A plasma processing apparatus includes a plasma processing chamber, a substrate support provided inside the plasma processing chamber and configured to hold a substrate, and a shower head facing the substrate support, wherein the shower head includes a shower plate formed with a gas flow path for discharging a gas, the shower plate includes a base member having a recessed portion, and an embedded member inserted into the recessed portion and bonded to the recessed portion, and the gas flow path includes a first flow path formed in the base member and communicating with the recessed portion, a second flow path formed in the embedded member, and a communication path formed in at least one of the base member and the embedded member and communicating the first flow path and the second flow path.

Abstract: There is provision of a substrate support assembly including an edge ring, a substrate support, and a thermal conductivity adjuster. The substrate support has a central portion that supports a substrate, and an outer peripheral portion that supports the edge ring arranged around the substrate. The thermal conductivity adjuster is in contact with a part of the edge ring in a circumferential direction, and a thermal conductivity of the thermal conductivity adjuster is different from a thermal conductivity of the edge ring.

Abstract: When a request for a service is made from a Web browser to a Web application, the Web application requests the service from a service provider of an MFP in accordance with the request. The service provider obtains a destination URL from the Web browser, and compares the destination URL with the URL of a service host written in a manifest file of a cooperation permission application. If those URLs match, the service provision is permitted.

Abstract: In a semiconductor device, a memory cell is formed of a control gate electrode and a memory gate electrode adjacent to each other, a gate insulating film formed below the control gate electrode and an insulating film formed below the memory gate electrode and having a charge accumulating part therein. Also, in this semiconductor device, a capacitive element is formed of a lower electrode, an upper electrode and a capacitive insulating film formed between the upper electrode and the lower electrode. A thickness of the lower electrode is smaller than a thickness of the control gate electrode.

Abstract: In a semiconductor device, a memory cell is formed of a control gate electrode and a memory gate electrode adjacent to each other, a gate insulating film formed below the control gate electrode and an insulating film formed below the memory gate electrode and having a charge accumulating part therein. Also, in this semiconductor device, a capacitive element is formed of a lower electrode, an upper electrode and a capacitive insulating film formed between the upper electrode and the lower electrode. A thickness of the lower electrode is smaller than a thickness of the control gate electrode.

Abstract: In a semiconductor device, a memory cell is formed of a control gate electrode and a memory gate electrode adjacent to each other, a gate insulating film formed below the control gate electrode and an insulating film formed below the memory gate electrode and having a charge accumulating part therein. Also, in this semiconductor device, a capacitive element is formed of a lower electrode, an upper electrode and a capacitive insulating film formed between the upper electrode and the lower electrode. A thickness of the lower electrode is smaller than a thickness of the control gate electrode.

Abstract: When a request for a service is made from a Web browser to a Web application, the Web application requests the service from a service provider of an MFP in accordance with the request. The service provider obtains a destination URL from the Web browser, and compares the destination URL with the URL of a service host written in a manifest file of a cooperation permission application. If those URLs match, the service provision is permitted.

Abstract: A processing apparatus capable of registering applications which periodically execute processes manages one of a plurality of applications registered with the processing apparatus, as a reference application. When registering a new application, the processing apparatus sets an execution cycle of the new application based on an execution cycle of the reference application if the execution cycle of the new application is modifiable, but changes the reference application to be managed to the new application if the execution cycle of the new application is not modifiable.

Abstract: In a semiconductor device, a memory cell is formed of a control gate electrode and a memory gate electrode adjacent to each other, a gate insulating film formed below the control gate electrode and an insulating film formed below the memory gate electrode and having a charge accumulating part therein. Also, in this semiconductor device, a capacitive element is formed of a lower electrode, an upper electrode and a capacitive insulating film formed between the upper electrode and the lower electrode. A thickness of the lower electrode is smaller than a thickness of the control gate electrode.

Abstract: A first application installed on a multifunction peripheral (MFP) request a network communication unit to check a second application installed on the MFP to use an external service. The first application controls, according to a result of checking of the second application, registration processing for registering function information (intent element) used to cooperate with the external service by a relay function using a mechanism of Web Intents, or invocation processing by the relay function for invoking the external service using the registered function information.

Abstract: A processing apparatus capable of registering applications which periodically execute processes manages one of a plurality of applications registered with the processing apparatus, as a reference application. When registering a new application, the processing apparatus sets an execution cycle of the new application based on an execution cycle of the reference application if the execution cycle of the new application is modifiable, but changes the reference application to be managed to the new application if the execution cycle of the new application is not modifiable.

Abstract: A first application installed on a multifunction peripheral (MFP) request a network communication unit to check a second application installed on the MFP to use an external service. The first application controls, according to a result of checking of the second application, registration processing for registering function information (intent element) used to cooperate with the external service by a relay function using a mechanism of Web Intents, or invocation processing by the relay function for invoking the external service using the registered function information.