Abstract: According to one embodiment, a memory system includes a nonvolatile memory and a controller. The controller acquires, from a host, write data having the same first size as a data write unit of the nonvolatile memory and obtained by dividing write data associated with one write command having a first identifier indicating a first write destination block in a plurality of write destination blocks into a plurality of write data or combining write data associated with two or more write commands having the first identifier. The controller writes the acquired write data having the first size to the first write destination block by a first write operation.

Abstract: According to one embodiment, a memory system includes a nonvolatile memory and a controller. The controller acquires, from a host, write data having the same first size as a data write unit of the nonvolatile memory and obtained by dividing write data associated with one write command having a first identifier indicating a first write destination block in a plurality of write destination blocks into a plurality of write data or combining write data associated with two or more write commands having the first identifier. The controller writes the acquired write data having the first size to the first write destination block by a first write operation.

Abstract: A controller manages a plurality of block groups each including one or more blocks among a plurality of blocks provided in a non-volatile memory. The controller assigns one of the plurality of block groups to each of plurality of zones. The controller writes write data which is to be written to a first zone to a shared write buffer and writes write data which is to be written to a second zone to the shared write buffer. When a total size of the write data in the first zone stored in the shared write buffer reaches a capacity of the first zone, the controller copies the write data in the first zone stored in the shared write buffer to the first block group assigned to the first zone.

Abstract: According to one embodiment, a memory system includes a nonvolatile memory including plural blocks each including plural pages, and a controller. When receiving a write request designating a first logical address and a first block number from the host, the controller determines a first location in a first block having the first block number to which data from the host should be written, and writes the data from the host to the first location in the first block. The controller notifies the host of either an in-block physical address indicative of the first location, or a group of the first logical address, the first block number and the first in-block physical address.

Abstract: According to one embodiment, a storage system includes a first storage including first nonvolatile memories storing data which is corrupted when data is read from the first nonvolatile memories, and a controller which controls the first storage. The controller reads data from a first nonvolatile memory at a first address, and determines that whether the read data is to be written back to the first storage or not.

Abstract: A wall thinning detection system includes a polarized magnetic charge distribution computing unit configured to compute a spatial distribution of polarized magnetic charges, which is an aggregate of a plurality of magnetic dipoles in a monitoring area, based on a magnetic field distribution in the monitoring area of a metal instrument measured by a magnetic field sensor array comprising a plurality of magnetic field sensors, and a wall thinning distribution computing unit configured to compute a wall thinning distribution in the monitoring area based on the spatial distribution of the polarized magnetic charges calculated by the polarized magnetic charge distribution computing unit.

Abstract: According to one embodiment, a memory system includes a nonvolatile memory including plural blocks each including plural pages, and a controller. When receiving a write request designating a first logical address and a first block number from the host, the controller determines a first location in a first block having the first block number to which data from the host should be written, and writes the data from the host to the first location in the first block. The controller notifies the host of either an in-block physical address indicative of the first location, or a group of the first logical address, the first block number and the first in-block physical address.

Abstract: According to one embodiment, a storage system includes a first storage including first nonvolatile memories storing data which is corrupted when data is read from the first nonvolatile memories, and a controller which controls the first storage. The controller reads data from a first nonvolatile memory at a first address, and determines that whether the read data is to be written back to the first storage or not.

Abstract: According to one embodiment, when a read request received from a host includes a first identifier indicative of a first region, a memory system obtains a logical address from the received read request, obtains a physical address corresponding to the obtained logical address from a logical-to-physical address translation table which manages mapping between logical addresses and physical addresses of the first region, and reads data from the first region, based on the obtained physical address. When the received read request includes a second identifier indicative of a second region, the memory system obtains physical address information from the read request, and reads data from the second region, based on the obtained physical address information.

Abstract: According to one embodiment, when a read request received from a host includes a first identifier indicative of a first region, a memory system obtains a logical address from the received read request, obtains a physical address corresponding to the obtained logical address from a logical-to-physical address translation table which manages mapping between logical addresses and physical addresses of the first region, and reads data from the first region, based on the obtained physical address. When the received read request includes a second identifier indicative of a second region, the memory system obtains physical address information from the read request, and reads data from the second region, based on the obtained physical address information.

Abstract: According to one embodiment, when a read request received from a host includes a first identifier indicative of a first region, a memory system obtains a logical address from the received read request, obtains a physical address corresponding to the obtained logical address from a logical-to-physical address translation table which manages mapping between logical addresses and physical addresses of the first region, and reads data from the first region, based on the obtained physical address. When the received read request includes a second identifier indicative of a second region, the memory system obtains physical address information from the read request, and reads data from the second region, based on the obtained physical address information.

Abstract: A method for producing a nickel cobalt complex hydroxide includes first crystallization of supplying a solution containing Ni, Co and Mn, a complex ion forming agent and a basic solution separately and simultaneously to one reaction vessel to obtain nickel cobalt complex hydroxide particles, and a second crystallization of, after the first crystallization, further supplying a solution containing nickel, cobalt, and manganese, a solution of a complex ion forming agent, a basic solution, and a solution containing said element M separately and simultaneously to the reaction vessel to crystallize a complex hydroxide particles containing nickel, cobalt, manganese and said element M on the nickel cobalt complex hydroxide particles crystallizing a complex hydroxide particles comprising Ni, Co, Mn and the element M on the nickel cobalt complex hydroxide particles.

Abstract: A cathode active material with high durability and a lithium ion secondary battery. The cathode active material is a cathode active material represented by a general formula Li(1+a)NixCoyMnzWtO2 (?0.05?a?0.2, x=1?y?z?t, 0?y<1, 0?t<1, 0<t?0.03), wherein the cathode active material satisfies the following formula (1): ?1/t1?0.92??(1) where t1 is an element concentration average of insides and grain boundaries of primary particles of a W element, and ?1 is an element concentration standard deviation of the insides and grain boundaries of the primary particles of the W element.

Abstract: According to one embodiment, a memory system receives from a host a first write request including a first block identifier designating a first write destination block to which first write data is to be written. The memory system acquires the first write data from a write buffer temporarily holding write data corresponding to each of the write requests, and writes the first write data to a write destination page in the first write destination block. The memory system releases a region in the write buffer, storing data which is made readable from the first write destination block by writ the first write data to the write destination page. The data made readable is a data of a page in the first write destination block preceding the write destination page.

Abstract: According to one embodiment, a memory system determine both of a first block to which data from a host is to be written and a first location of the first block, when receiving a write request to designate a first logical address from the host. The memory system writes the data from the host to the first location of the first block. The memory system notifies the host of the first logical address, a first block number designating the first block, and a first in-block offset indicating an offset from a leading part of the first block to the first location by a multiple of grain having a size different from a page size.

Abstract: Examples of a method for teaching a transportation position includes correcting the position of an alignment jig having a plurality of sloping surfaces relative to a susceptor pin projecting upwards from an upper surface of a susceptor by lowering a robot hand to bring one of the sloping surfaces into contact with the susceptor pin and causing the susceptor pin to slide on the sloping surfaces by virtue of an own weight of the aliment jig, detecting a position of the alignment jig before and after the positional correction of the alignment jig, and correcting a movement destination information by an amount corresponding to a difference between an initial position and a corrected position of the alignment jig.

Abstract: According to one embodiment, a memory system receives from a host a first write request including a first block identifier designating a first write destination block to which first write data is to be written. The memory system acquires the first write data from a write buffer temporarily holding write data corresponding to each of the write requests, and writes the first write data to a write destination page in the first write destination block. The memory system releases a region in the write buffer, storing data which is made readable from the first write destination block by writing the first write data to the write destination page. The data made readable is a data of a page in the first write destination block preceding the write destination page.

Abstract: A method for producing a nickel cobalt complex hydroxide includes first crystallization of supplying a solution containing Ni, Co and Mn, a complex ion forming agent and a basic solution separately and simultaneously to one reaction vessel to obtain nickel cobalt complex hydroxide particles, and a second crystallization of, after the first crystallization, further supplying a solution containing nickel, cobalt, and manganese, a solution of a complex ion forming agent, a basic solution, and a solution containing said element M separately and simultaneously to the reaction vessel to crystallize a complex hydroxide particles containing nickel, cobalt, manganese and said element M on the nickel cobalt complex hydroxide particles crystallizing a complex hydroxide particles comprising Ni, Co, Mn and the element M on the nickel cobalt complex hydroxide particles.

Abstract: A material defect detection device that detects a material defect in a predetermined region of metallic equipment using a magnetic field distribution in the predetermined region measured by a magnetic sensor array including a plurality of magnetic sensors, the material defect detection device including: a processor that calculates a density distribution of magnetic dipoles in the predetermined region based on the magnetic field distribution and calculates a depth distribution of material defect in the predetermined region based on the density distribution of the magnetic dipoles.

Abstract: According to one embodiment, a memory system includes a nonvolatile memory and a controller. The controller acquires, from a host, write data having the same first size as a data write unit of the nonvolatile memory and obtained by dividing write data associated with one write command having a first identifier indicating a first write destination block in a plurality of write destination blocks into a plurality of write data or combining write data associated with two or more write commands having the first identifier. The controller writes the acquired write data having the first size to the first write destination block by a first write operation.