Abstract: A laminate is provided comprising a support, a resin layer, a metal layer, an insulating layer, and a redistribution layer. The resin layer comprises a photo-decomposable resin having light-shielding properties and has a transmittance of up to 20% with respect to light of wavelength 355 nm. The laminate is easy to fabricate and has thermal process resistance, the support is easily separated, and a semiconductor package is efficiently produced.

Abstract: A film-forming resin composition for use in encapsulating large-diameter thin-film wafers includes (A) a silicone resin having a weight-average molecular weight of 3,000 to 500,000 and containing repeating units of formula (1) wherein R1 to R4 are monovalent hydrocarbon groups, but R3 and R4 are not both methyl, m and n are integers of 0 to 300, R5 to R8 are divalent hydrocarbon groups, a and b are positive numbers such that a+b=1, and X is a specific divalent organic moiety; (B) a phenolic compound of formula (7) wherein Y is a carbon atom or a tetravalent hydrocarbon group of 2 to 20 carbon atoms, and R13 to R16 are monovalent hydrocarbon groups or hydrogen atoms; and (C) a filler.

Abstract: The present invention is a photo-curable resin composition containing (A) a silicone polymer compound having repeating units shown by the formulae (1) and (2), (B) a photosensitive acid generator capable of generating an acid by decomposition with light having a wavelength of 190 to 500 nm, (C) one or more compounds selected from an amino condensate modified with formaldehyde or formaldehyde-alcohol, a phenol compound having on average two or more methylol groups or alkoxymethylol groups per molecule, and a polyhydric phenol compound whose phenolic hydroxyl group is substituted with a glycidoxy group, and (D) one or more compounds selected from polyhydric phenols having 3 or more hydroxyl groups. As a result, there is provided a photo-curable resin composition that can facilitate thick and fine patterning when the composition is used in patterning.

Abstract: To provide a laminate which enables pattern formation with excellent opening shape even in the case where a chemically amplified negative type resist material is used, and a pattern forming method in which the laminate is used. The laminate includes a chemically amplified negative type resist layer, and a basic resin coat layer thereon that contains 0.001 to 10% by weight of a basic compound having a molecular weight of up to 10,000.

Abstract: A film material includes a support film having a transmittance of at least 60% with respect to light of wavelength 300-450 nm, and a resin layer containing 0.001-10 wt % of a basic compound with a molecular weight of up to 10,000, and having a thickness of 1-100 ?m. A pattern is formed by attaching the resin layer in the film material to a chemically amplified negative resist layer on a wafer, exposing, baking, and developing the resist layer. The profile of openings in the pattern is improved.

Abstract: To provide a wafer laminate which permits easy bonding between a support and a wafer, permits easy delamination of a wafer from a support, enables enhanced productivity of a thin wafer, and is suited to production of a thin wafer, and for a method of producing the wafer laminate. The wafer laminate includes a support, an adhesive layer formed on the support, and a wafer laminated in such a manner that its front surface having a circuit surface faces the adhesive layer. The adhesive layer includes a light-shielding resin layer A and a non-silicone thermoplastic resin-coating resin layer B in this order from the support side. The resin layer A is composed of a resin that contains a repeating unit having a condensed ring, and the resin layer B has a storage elastic modulus E? at 25° C. of 1 to 500 MPa and a tensile break strength of 5 to 50 MPa.

Abstract: Disclosed herein is a wafer laminate suitable for production of thin wafers and a method for producing the wafer laminate. The wafer laminate can be formed easily by bonding between the support and the wafer and it can be easily separated from each other. It promotes the productivity of thin wafers. The wafer laminate includes a support, an adhesive layer formed on the support, and a wafer which is laminated on the adhesive layer in such a way that that surface of the wafer which has the circuit surface faces toward the adhesive layer, wherein the adhesive layer is a cured product of an adhesive composition composed of resin A and resin B, the resin A having the light blocking effect and the resin B having the siloxane skeleton.

Abstract: A wafer processing laminate including a support, a temporary adhesive material layer formed on the support, and a wafer laminated on the temporary adhesive material layer, the wafer having a circuit-forming front surface and back surface to be processed, wherein the temporary adhesive material layer includes a complex temporary adhesive material layer having two-layered structure including a first temporary adhesive layer composed of a thermoplastic organopolysiloxane polymer layer (A) having a film thickness of less than 100 nm and a second temporary adhesive layer composed of a thermosetting siloxane-modified polymer layer (B), the first temporary adhesive layer being releasably laminated to the front surface of the wafer, the second temporary adhesive layer being releasably laminated to the first temporary adhesive layer and the support. A temporary adhesive material for a wafer processing which withstand a thermal process at high temperature exceeding 300° C.

Abstract: A wafer processing laminate including support, temporary adhesive material layer laminated on the support, and wafer stacked on temporary adhesive material layer, wafer having front surface on which circuit is formed and back surface to be processed, temporary adhesive material layer including first temporary adhesive layer composed of thermoplastic resin layer (A) laminated on front surface of wafer and second temporary adhesive layer composed of thermosetting resin layer (B) laminated on first temporary adhesive layer, thermoplastic resin layer (A) being soluble in cleaning liquid (D) after processing wafer, thermosetting resin layer (B) being insoluble in cleaning liquid (D) after heat curing and capable of absorbing cleaning liquid (D) such that cleaning liquid (D) permeates into layer (B). This wafer processing laminate allows a wide selection of materials, facilitates separation and collection of processed wafer, meets requirements on various processes, and can increase productivity of thin wafers.

Abstract: A wafer laminate has an adhesive layer (3) sandwiched between a transparent substrate (1) and a water (2), with a circuit-forming surface of the wafer facing the adhesive layer. The adhesive layer (3) includes a first cured resin layer (3a) disposed adjacent the substrate and having light-shielding properties and a second cured resin layer (3b) disposed adjacent the wafer and comprising a cured product of a thermosetting resin composition.

Abstract: A micro-structure is manufactured by patterning a sacrificial film, forming an inorganic material film on the pattern, providing the inorganic material film with an aperture, and etching away the sacrificial film pattern through the aperture to define a space having the contour of the pattern. The patterning stage includes the steps of (A) forming a sacrificial film using a composition comprising a cresol novolac resin and a crosslinker, (B) exposing patternwise the film to first high-energy radiation, (C) developing, and (D) exposing the sacrificial film pattern to second high-energy radiation and heat treating for thereby forming crosslinks within the cresol novolac resin.

Abstract: A laminate comprising a support, a temporary adhesive layer, and a wafer having a circuit-forming front surface and a back surface to be processed allows for processing the wafer. The temporary adhesive layer consists of a first temporary bond layer (A) of thermoplastic organosiloxane polymer which is releasably bonded to the front surface of the wafer and a second temporary bond layer (B) of thermosetting modified siloxane polymer which is laid contiguous to the first temporary bond layer and releasably bonded to the support.

Abstract: A semiconductor apparatus includes a semiconductor device, on-semiconductor-device metal pad and metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first insulating layer on which the semiconductor device is placed, a second insulating layer formed on the semiconductor device, a third insulating layer formed on the second layer. The metal interconnect is electrically connected to the semiconductor device via the on-semiconductor-device metal pad at an upper surface of the second layer, penetrates the second layer from its upper surface, and is electrically connected to the through electrode at an lower surface of the second layer, and an under-semiconductor-device metal interconnect is between the first layer and the semiconductor device, and the under-semiconductor-device metal interconnect is electrically connected to the metal interconnect at the lower surface of the second layer.

Abstract: A semiconductor apparatus including a semiconductor device, an on-semiconductor-device metal pad and a metal interconnect each electrically connected to the semiconductor device, a through electrode and a solder bump each electrically connected to the metal interconnect, a first insulating layer on which the semiconductor device is placed, a second insulating layer formed on the semiconductor device, a third insulating layer formed on the second insulating layer, wherein the metal interconnect is electrically connected to the semiconductor device via the on-semiconductor-device metal pad at an upper surface of the second insulating layer, and the metal interconnect penetrates the second insulating layer from its upper surface and is electrically connected to the through electrode at an lower surface of the second insulating layer. This semiconductor apparatus can be easily placed on a circuit board and stacked, and can reduce its warpage even with dense metal interconnects.

Abstract: The present invention is a photo-curable resin composition containing (A) a silicone polymer compound having repeating units shown by the formulae (1) and (2), (B) a photosensitive acid generator capable of generating an acid by decomposition with light having a wavelength of 190 to 500 nm, (C) one or more compounds selected from an amino condensate modified with formaldehyde or formaldehyde-alcohol, a phenol compound having on average two or more methylol groups or alkoxymethylol groups per molecule, and a polyhydric phenol compound whose phenolic hydroxyl group is substituted with a glycidoxy group, and (D) one or more compounds selected from polyhydric phenols having 3 or more hydroxyl groups. As a result, there is provided a photo-curable resin composition that can facilitate thick and fine patterning when the composition is used in patterning.

Abstract: A film-forming resin composition for use in encapsulating large-diameter thin-film wafers includes (A) a silicone resin having a weight-average molecular weight of 3,000 to 500,000 and containing repeating units of formula (1) wherein R1 to R4 are monovalent hydrocarbon groups, but R3 and R4 are not both methyl, m and n are integers of 0 to 300, R5 to R8 are divalent hydrocarbon groups, a and b are positive numbers such that a+b=1, and X is a specific divalent organic moiety; (B) a phenolic compound of formula (7) wherein Y is a carbon atom or a tetravalent hydrocarbon group of 2 to 20 carbon atoms, and R13 to R16 are monovalent hydrocarbon groups or hydrogen atoms; and (C) a filler.

Abstract: A wafer processing laminate, a wafer processing member, a temporary adhering material for processing wafer, and a method for manufacturing a thin wafer using the same. The wafer processing laminate includes a support, a temporary adhesive material layer formed thereon and a wafer laminated on the temporary adhesive material layer, where the wafer has a circuit-forming front surface and a back surface to be processed. The temporary adhesive material layer includes a first temporary adhesive layer of a thermoplastic organopolysiloxane polymer layer (A) releasably adhered on a surface of the wafer, a second temporary adhesive layer of a radiation curable polymer layer (B) laminated on the first temporary adhesive layer, and a third temporary adhesive layer of a thermoplastic organopolysiloxane polymer layer (A?) laminated on the second temporary adhesive layer and releasably adhered to the support.

Abstract: A temporary bonding adhesive composition includes a first compound including a thermosetting polyorganosiloxane and a second compound including a thermoplastic polyorganosiloxane.

Abstract: A silicone resin comprising constitutional units represented by formula (1) and having a Mw of 3,000-500,000 contains 10-50 wt % of (A-1) a first silicone resin having a silicone content of 10-40 wt % and (A-2) a second silicone resin having a silicone content of 50-80 wt %. A resin composition comprising the silicone resin can be formed in film form, and it possesses satisfactory covering or encapsulating performance to large size/thin wafers. The resin composition or resin film ensures satisfactory adhesion, low warpage, and wafer protection. The resin film is useful in wafer-level packages.

Abstract: Temporary adhesive material for wafer processing, the temporary adhesive material being used for temporarily bonding support to wafer having circuit-forming front surface and back surface to be processed, including complex temporary adhesive material layer that has first temporary adhesive layer composed of thermosetting siloxane polymer layer (A), second temporary adhesive layer composed of thermosetting polymer layer (B), and third temporary adhesive layer composed of thermoplastic resin layer (C), wherein the polymer layer (A) is cured layer of composition containing (A-1) an organopolysiloxane having alkenyl group within its molecule, (A-2) an organopolysiloxane having R103SiO0.5 unit and SiO2 unit, (A-3) organohydrogenpolysiloxane having two or more Si—H groups per molecule, and (A-4) platinum-based catalyst.