Abstract: A polyimide resin, characterized in that the polyimide resin comprises three kinds of repeating units represented by the formula (1), and has a weight average molecular weight, reduced to polystyrene, of from 5,000 to 500,000, an acryl equivalent of from 400 to 3,000 g/eq, and a carboxylic acid equivalent of from 300 to 2500 g/eq wherein X is a tetravalent organic group, Y is a divalent organic group, Z is a divalent organic group, W is a divalent organic group having a polyorganosiloxane structure. The polyimide resin is suitable for preparing a patterned or non-patterned protective coating.

Abstract: A polyimide silicone resin, characterized in that the polyimide silicone resin comprises repeating units represented by the following formula (1) and has a number average molecular weight of from 5,000 to 200,000 wherein X is a tetravalent organic group, at least one of the tetravalent organic groups being represented by the following formula (2) wherein R1 may be the same with or different from each other and is a monovalent hydrocarbon group having 1 to 8 carbon atoms, R2may be the same with or different from each other and is a trivalent organic group, and n ranges from 1 to 120 on average, and Y is a divalent organic group, at least one of the divalent organic groups comprising a phenolic hydroxyl group or a carboxyl group bonded to an aromatic ring.

Abstract: A positive photoresist composition comprising an alkali-soluble resin, a 1,2-quinonediazide compound, an organic solvent, and a fluorinated organosilicon compound of formula (1) serving as a surfactant can be effectively coated to uniformity over large areas and is improved in resist pattern profile. Rf is a C5-C30 perfluoroalkyl group containing at least one ether bond, Q is a polyether group consisting of an ethylene glycol and/or propylene glycol polymer chain, R is H or C1-C4 alkyl, X is a divalent linking group exclusive of oxygen, Y is a divalent linking group, p is an integer of at least 3, and 0<n<3.

Abstract: There is disclosed a resist lower layer film material for a multilayer-resist film used in lithography which contains a polymer having at least a repeating unit represented by the following general formula (1).

Abstract: A positive resist composition comprising a mixture of an alkali-soluble novolak resin prepared using m-cresol, p-cresol and 2,5-xylenol as starting reactants and a phenolic compound, wherein the hydrogen atoms of all hydroxyl groups are substituted in a proportion of 0.03–0.05 mol per hydrogen atom with 1,2-naphthoquinonediazidosulfonyl ester groups, has uniformity, high sensitivity and high resolution, and is improved in heat resistance, film retention, substrate adhesion, and storage stability.

Abstract: A novel organosiloxane polymer is obtained by addition reaction of an organohydrogenpolysiloxane, an alkenyl-containing organopolysiloxane and an unsaturated compound of formula (3) or (4). Using the organosiloxane polymer, a photo-curable resin composition is prepared which can be exposed to radiation having a wide range of wavelength and developed to form a pattern.

Abstract: A polyimide resin having a number average molecular weight of from 2,000 to 800,000 and a repeating unit represented by the following formula (1): wherein X is a tetravalent organic group, Y is a divalent organic group, 75 to 98 mole % of R1 is hydrogen atom, and 2 to 25 mole % of R1 is 1,2-naphthoquinonediazide sulfonyl group.

Abstract: An epoxy resin composition comprising (i) a compound having at least two epoxy groups in a molecule as a main component, (ii) a fluorene skeleton-bearing, silicone-modified phenolic resin as a curing agent, and (iii) an organophosphorus compound, amine compound or imidazole compound as a cure accelerator cures into an elastomeric product having a low elasticity, toughness and low dielectric properties.

Abstract: A colorless and transparent thermosetting polyimidesilicone resin comprising structural units of the following general formula (1) and structural units of the general formula (4), said resin being soluble in an organic solvent wherein X is a tetravalent organic group having 4 or more carbon atoms, none of the carbon atoms of X being bound to a plurality of carbonyl groups, Y is a diamine residue and Z is a diaminosiloxane residue.

Abstract: The present invention relates to a photocurable resin composition, wherein the composition comprises:(A) a polyimide resin having one or more primary alcoholic groups with an alcoholic equivalent equal to or less than 3500, said polyimide being soluble in an organic solvent and having a weight average molecular weight of from 5,000 to 500,000; (B) at least one selected from the group consisting of a condensate of an amino compound modified with formalin, optionally further with alcohol, preferably a melamine resin modified with formalin, optionally further with alcohol, and a urea resin with formalin, optionally further with alcohol, and a phenolic compound having, on average, at least two selected from the group consisting of a methylol group and an alkoxy methylol group, and (C) a photoacid generator capable of generating an acid upon irradiation with light of a wavelength of from 240 nm to 500 nm.

Abstract: This invention relates to a novel polyimide silicone having an alcoholic hydroxyl group and a process for the preparation thereof. The polyimide of the invention having a primary alcoholic hydroxyl group is represented by the following general formula (1), wherein X represents a tetravalent organic group, Y represents a divalent group having at least one monovalent group selected from the group consisting of a phenolic hydroxyl group and a carboxyl group, with at least one being a divalent organic group having an alcoholic hydroxyl group, Z represents a divalent organic group, W represents a divalent organic group having an organosiloxane structure, k is a positive number, and each of m and n is equal to 0 (zero) or a positive number, with 0.1?k/(k+m+n)?1, 0?m/(k+m+n)?0.8, 0?n/(k+m+n)?0.8.

Abstract: A positive resist composition contains a novolak resin in which 3-27 mol % of the hydroxyl group hydrogens are substituted with 1,2-naphthoquinonediazidosulfonyl ester groups, a methyl vinyl ether-monoalkyl maleate copolymer and optionally, an alkali-soluble cellulose whose glucose ring substituent groups are substituted with organic groups at a specific rate. The composition is useful as a thick film photoresist which is subject to a plating step and offers many advantages including high sensitivity, perpendicular geometry, high resolution, and crack resistance during and after the plating step.

Abstract: A photo-curable resin composition comprising (A) an organosiloxane-bearing polymer comprising recurring units of formula (1): wherein R1 to R4 are monovalent C1-C8 hydrocarbon, n is an integer of 1-1,000, and X is and having a Mw of 500-200,000, (B) a formalin-modified or formalin-alcohol-modified amino condensate, a phenol compound having on the average at least two methylol or alkoxymethylol radicals, or an epoxy compound having on the average at least two epoxy radicals, (C) a photoacid generator, and (D) a silicon compound of the formula: (R11)mSi(OR12)4?m wherein R11 is monovalent C1-C9 hydrocarbon, R12 is C1-C4 alkyl, m is 0-2, forms cured pattern films having dry etch resistance and improved adhesion to substrates.

Abstract: A positive resist composition comprising a mixture of an alkali-soluble novolak resin prepared using m-cresol, p-cresol and 2,5-xylenol as starting reactants and a phenolic compound, wherein the hydrogen atoms of all hydroxyl groups are substituted in a proportion of 0.03-0.05 mol per hydrogen atom with 1,2-naphthoquinonediazidosulfonyl ester groups, has lo uniformity, high sensitivity and high resolution, and is improved in heat resistance, film retention, substrate adhesion, and storage stability.

Abstract: An organosiloxane polymer comprising recurring units of the general formula (1) and having a weight average molecular weight of 1,000-500,000 is novel. R1 to R4 are monovalent hydrocarbon groups, n is an integer of 1-2,000, X has a structure of the formula: and R5 is an acrylic functional organic group of the formula: wherein R? is H or methyl and R? is a divalent hydrocarbon group. A photo-curable resin composition comprising the organosiloxane polymer and a sensitizer can be cured with a wide wavelength range of light.

Abstract: A resist composition comprising (A) a substantially alkali-insoluble polymer having acidic functional groups protected with acid labile groups, which becomes alkali soluble upon elimination of the acid labile groups, (B) a photoacid generator, and (C) a nonionic fluorinated organosiloxane compound consisting of perfluoroalkyl-containing siloxane bonds and polyoxyethylene type polyether bonds is exposed to UV having a wavelength of at least 150 nm and developed with an alkaline solution to form a pattern without leaving scum.

Abstract: There is disclosed a resist lower layer film material for a multilayer-resist film used in lithography which contains a polymer having at least a repeating unit represented by the following general formula (1). There can be provided a resist lower layer film material for a multilayer-resist process, especially for a two-layer resist process, which functions as an excellent antireflection film especially for exposure with a short wavelength, namely has higher transparency, and has the optimal n value and k value, and is excellent in an etching resistance in substrate processing, and a method for forming a pattern on a substrate by lithography using it.

Abstract: There is disclosed a resist lower layer film material for a multilayer-resist film used in lithography which contains, at least, a polymer having a repeating unit represented by the following general formula (1). Thereby, there can be provided a resist lower layer film material for a multilayer-resist process, especially for a two-layer resist process, which functions as an excellent antireflection film especially for exposure with a short wavelength, namely has higher transparency, and has the optimal n value and k value, and is excellent in an etching resistance in substrate processing, and a method for forming a pattern on a substrate by lithography using it.

Abstract: A phenolic resin/silicone resin hybrid compound is obtained by effecting hydrolytic condensation of an organooxysilane in the co-presence of a phenolic resin. The hybrid compound is used as the base polymer in a resist for endowing a resist film with excellent adhesion to a metal substrate.

Abstract: A photoresist composition comprising a novolac resin in which 3-27 mol % of the hydroxyl group hydrogens are substituted with 1,2-naphthoquinonediazidosulfonyl groups and an alkali-soluble cellulose whose glucose ring substituent groups are substituted with organic groups at a specific rate is used in microprocessing as a positive photoresist and offers many advantages including uniformity, high sensitivity, high resolution, good pattern shape, heat resistance, film retention, substrate adhesion, shelf stability, and high throughput.