Patents by Inventor Hidetomo Kobayashi
Hidetomo Kobayashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220201234Abstract: An imaging device capable of executing image processing is provided. Analog data (image data) acquired through an imaging operation is retained in a pixel, and data obtained by multiplying the analog data by a given weight coefficient in the pixel can be extracted. The data is taken into a neural network or the like, whereby processing such as image recognition can be performed. Since an enormous amount of image data can be retained in pixels in an analog data state, processing can be performed efficiently.Type: ApplicationFiled: April 14, 2020Publication date: June 23, 2022Inventors: Seiichi YONEDA, Yusuke NEGORO, Hidetomo KOBAYASHI
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Publication number: 20220189398Abstract: A semiconductor device with low power consumption is provided. A semiconductor device that operates at high speed is provided. A semiconductor device with a small circuit area is provided. A novel semiconductor device is provided. In the semiconductor device, a signal line is electrically connected to a plurality of pixels between a first node and a second node; an amplifier circuit has a function of amplifying a supplied current and supplying the amplified current to the first node; an analog-to-digital converter circuit has a function of converting a potential of the first node into a first signal, and a function of converting a potential of the second node into a second signal; a sensing circuit has a function of comparing the first signal and the second signal and generating a third signal; and the current amplification factor of the amplifier circuit is determined in accordance with the third signal.Type: ApplicationFiled: April 28, 2020Publication date: June 16, 2022Inventors: Kiyotaka KIMURA, Hidetomo KOBAYASHI, Takayuki IKEDA
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Publication number: 20220181428Abstract: A display apparatus with low power consumption and high image quality is provided. The display apparatus includes a light-emitting element, a first transistor, a second transistor, a third transistor, a first capacitor, and a second capacitor. Preferably, one electrode of the light-emitting element is electrically connected to one of a source and a drain of the first transistor; the one electrode of the light-emitting element is electrically connected to one electrode of the first capacitor; a gate of the first transistor is electrically connected to one of a source and a drain of the second transistor; the gate of the first transistor is electrically connected to one electrode of the second capacitor; the other electrode of the second capacitor is electrically connected to the other electrode of the first capacitor; and the other electrode of the second capacitor is electrically connected to one of a source and a drain of the third transistor.Type: ApplicationFiled: April 27, 2020Publication date: June 9, 2022Inventors: Hidetomo KOBAYASHI, Hideaki SHISHIDO, Takayuki IKEDA, Shuichi KATSUI
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Patent number: 11335813Abstract: A semiconductor device in which the accuracy of arithmetic operation is increased by correction of the threshold voltage of a transistor can be provided. The semiconductor device includes first and second current supply circuits, and the second current supply circuit has the same configuration as the first current supply circuit. The first current supply circuit includes first and second transistors, a first capacitor, and first to third nodes. A first terminal of the first transistor is electrically connected to the first node, and a back gate of the first transistor is electrically connected to a first terminal of the second transistor and a first terminal of the first capacitor. A gate of the first transistor is electrically connected to the second node, and a second terminal of the first capacitor is electrically connected to a second terminal of the first transistor.Type: GrantFiled: May 23, 2019Date of Patent: May 17, 2022Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Hidetomo Kobayashi, Takayuki Ikeda, Takashi Nakagawa, Takeya Hirose, Shuichi Katsui
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Publication number: 20220137409Abstract: An object is to provide an electronic device capable of recognizing a user's facial feature accurately. A glasses-type electronic device includes a first optical component, a second optical component, a frame, an imaging device, a feature extraction unit, and an emotion estimation unit. The frame is in contact with a side surface of the first optical component and a side surface of the second optical component. The imaging device is in contact with the frame and has a function of detecting part of a user's face. The feature extraction unit has a function of extracting a feature of the user's face from the detected part of the user's face. The emotion estimation unit has a function of estimating information on the user from the extracted feature.Type: ApplicationFiled: February 13, 2020Publication date: May 5, 2022Inventors: Shunpei YAMAZAKI, Takayuki IKEDA, Hidetomo KOBAYASHI, Hideaki SHISHIDO, Kiyotaka KIMURA, Takashi NAKAGAWA, Kosei NEI, Kentaro HAYASHI
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Patent number: 11302726Abstract: An imaging device capable of executing image processing is provided. A structure is employed in which a photoelectric conversion element, a first transistor, a second transistor, and an inverter circuit are included; one electrode of the photoelectric conversion element is electrically connected to one of a source and a drain of the first transistor; the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor; the one of the source and the drain of the second transistor is electrically connected to an input terminal of the inverter circuit; and data obtained by photoelectric conversion is binarized and output.Type: GrantFiled: July 3, 2018Date of Patent: April 12, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hidetomo Kobayashi, Yuki Tamatsukuri, Naoto Kusumoto
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Publication number: 20220059045Abstract: A display device with favorable display quality is provided. A display portion where a plurality of pixels is arranged in a matrix is divided into Region A and Region B, i.e., regions on the upstream side and the downstream side of a scanning direction. A signal line for supplying an image signal is provided in each of Region A and Region B. Region A and Region B adjoin each other such that a boundary line showing the boundary between the regions is bent. Bending the boundary line suppresses formation of a stripe in a boundary portion. For example, in a given column, the total number of pixels electrically connected to a signal line in Region A is made different from the total number of pixels electrically connected to a signal line in Region B.Type: ApplicationFiled: November 8, 2021Publication date: February 24, 2022Inventors: Hidetomo KOBAYASHI, Kei TAKAHASHI, Shunpei YAMAZAKI
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Patent number: 11205387Abstract: A display device that can be easily and more flexibly designed is provided. The display device includes a pixel circuit and a driver circuit in a display portion. The driver circuit includes a plurality of pulse output circuits. Each of the plurality of pulse output circuits has a function of driving a gate line. The pixel circuit is electrically connected to the gate line. Each of the plurality of pulse output circuits includes a first transistor. The pixel circuit includes a second transistor. A layer including the second transistor is over a layer including the first transistor, and the first transistor and the second transistor overlap with each other.Type: GrantFiled: March 5, 2020Date of Patent: December 21, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hidetomo Kobayashi, Kouhei Toyotaka
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Publication number: 20210383762Abstract: A display device that can be easily and more flexibly designed is provided. The display device includes a pixel circuit and a driver circuit in a display portion. The driver circuit includes a plurality of pulse output circuits. Each of the plurality of pulse output circuits has a function of driving a gate line. The pixel circuit is electrically connected to the gate line. Each of the plurality of pulse output circuits includes a first transistor. The pixel circuit includes a second transistor. A layer including the second transistor is over a layer including the first transistor, and the first transistor and the second transistor overlap with each other.Type: ApplicationFiled: August 25, 2021Publication date: December 9, 2021Inventors: Hidetomo KOBAYASHI, Kouhei TOYOTAKA
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Publication number: 20210384239Abstract: An imaging device capable of image processing is provided. The imaging device can retain analog data (image data) obtained by an image-capturing operation in a pixel and perform a product-sum operation of the analog data and a predetermined weight coefficient in the pixel to convert the data into binary data. When the binary data is taken in a neural network or the like, processing such as image recognition can be performed. Since enormous volumes of image data can be retained in pixels in the state of analog data, processing can be performed efficiently.Type: ApplicationFiled: August 17, 2021Publication date: December 9, 2021Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Takayuki Ikeda, Yoshiyuki Kurokawa, Shintaro Harada, Hidetomo Kobayashi, Roh Yamamoto, Kiyotaka Kimura, Takashi Nakagawa, Yusuke Negoro
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Publication number: 20210374378Abstract: A highly convenient imaging device is provided. Alternatively, a highly reliable imaging device is provided. Alternatively, a highly convenient authentication device is provided. Alternatively, a highly reliable authentication device is provided. The imaging device includes a substrate, a pixel array, and an adhesive layer. The substrate has flexibility, the pixel array is positioned over a first surface of the substrate, and the adhesive layer is positioned on a second surface facing the first surface of the substrate. The pixel array includes a light-receiving element and a light-emitting element. The light-receiving element has a function of sensing infrared light and includes a first pixel electrode, an active layer, and a common electrode. The light-emitting element has a function of emitting infrared light and includes a second pixel electrode, a light-emitting layer, and the common electrode. The active layer is positioned over the first pixel electrode and contains a first organic compound.Type: ApplicationFiled: October 1, 2019Publication date: December 2, 2021Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Hidetomo KOBAYASHI, Takayuki IKEDA
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Publication number: 20210295780Abstract: A high-definition display device is provided. A small display device is provided. In the display device, a first layer and a second layer are stacked and provided. The first layer includes a gate driver circuit and a source driver circuit, and the second layer includes a display portion. The gate driver circuit and the source driver circuit are provided to include a region overlapping with the display portion. The gate driver circuit and the source driver circuit have an overlap region where they are not strictly separated from each other. Five or more gate driver circuits and five or more source driver circuits can be provided.Type: ApplicationFiled: May 9, 2019Publication date: September 23, 2021Inventors: Takayuki IKEDA, Hidetomo KOBAYASHI, Hideaki SHISHIDO, Kiyotaka KIMURA, Takashi NAKAGAWA, Kosei NEI
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Patent number: 11101302Abstract: An imaging device capable of image processing is provided. The imaging device can retain analog data (image data) obtained by an image-capturing operation in a pixel and perform a product-sum operation of the analog data and a predetermined weight coefficient in the pixel to convert the data into binary data. When the binary data is taken in a neural network or the like, processing such as image recognition can be performed. Since enormous volumes of image data can be retained in pixels in the state of analog data, processing can be performed efficiently.Type: GrantFiled: May 16, 2018Date of Patent: August 24, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Takayuki Ikeda, Yoshiyuki Kurokawa, Shintaro Harada, Hidetomo Kobayashi, Roh Yamamoto, Kiyotaka Kimura, Takashi Nakagawa, Yusuke Negoro
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Publication number: 20210217891Abstract: A semiconductor device in which the accuracy of arithmetic operation is increased by correction of the threshold voltage of a transistor can be provided. The semiconductor device includes first and second current supply circuits, and the second current supply circuit has the same configuration as the first current supply circuit. The first current supply circuit includes first and second transistors, a first capacitor, and first to third nodes. A first terminal of the first transistor is electrically connected to the first node, and a back gate of the first transistor is electrically connected to a first terminal of the second transistor and a first terminal of the first capacitor. A gate of the first transistor is electrically connected to the second node, and a second terminal of the first capacitor is electrically connected to a second terminal of the first transistor.Type: ApplicationFiled: May 23, 2019Publication date: July 15, 2021Inventors: Hidetomo KOBAYASHI, Takayuki IKEDA, Takashi NAKAGAWA, Takeya HIROSE, Shuichi KATSUI
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Publication number: 20210202549Abstract: An imaging device that can obtain imaging data corresponding to high-resolution images in a short period of time is provided. The imaging device includes a pixel including a photoelectric conversion element and n (n is an integer more than 2 inclusive) retention circuits. The photoelectric conversion element and the n retention circuits are stacked. One electrode of the photoelectric conversion element is electrically connected to the first to n-th retention circuits. The retention circuits include OS transistors with an extremely low off-state current feature, and can retain imaging data for a long time. In the first to n-th periods, the imaging device obtains the first to n-th imaging data and retains it in the first to n-th retention circuits. Then, the first to n-th imaging data retained in the first to n-th retention circuits are read out. The read imaging data is output outside the imaging data through AD conversion.Type: ApplicationFiled: June 11, 2019Publication date: July 1, 2021Inventors: Seiichi YONEDA, Hidetomo KOBAYASHI, Takashi NAKAGAWA, Yusuke NEGORO, Shunpei YAMAZAKI
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Publication number: 20210151486Abstract: An imaging device capable of executing image processing is provided. A structure is employed in which a photoelectric conversion element, a first transistor, a second transistor, and an inverter circuit are included; one electrode of the photoelectric conversion element is electrically connected to one of a source and a drain of the first transistor; the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor; the one of the source and the drain of the second transistor is electrically connected to an input terminal of the inverter circuit; and data obtained by photoelectric conversion is binarized and output.Type: ApplicationFiled: July 3, 2018Publication date: May 20, 2021Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Hidetomo KOBAYASHI, Yuki TAMATSUKURI, Naoto KUSUMOTO
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Publication number: 20210135674Abstract: An object is to provide a semiconductor device that can maintain the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units even after supply of power supply voltage is stopped. Another object is to provide a semiconductor device in which the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units can be changed at high speed. In a reconfigurable circuit, an oxide semiconductor is used for a semiconductor element that stores data on the circuit configuration, connection relation, or the like. Specifically, the oxide semiconductor is used for a channel formation region of the semiconductor element.Type: ApplicationFiled: January 15, 2021Publication date: May 6, 2021Inventors: Masashi FUJITA, Yutaka SHIONOIRI, Kiyoshi KATO, Hidetomo KOBAYASHI
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Publication number: 20210134860Abstract: An imaging device capable of image processing is provided. The imaging device can retain analog data (image data) obtained by an image-capturing operation in a pixel and perform a product-sum operation of the analog data and a predetermined weight coefficient in the pixel to convert the data into binary data. When the binary data is taken in a neural network or the like, processing such as image recognition can be performed. Since enormous volumes of image data can be retained in pixels in the state of analog data, processing can be performed efficiently.Type: ApplicationFiled: May 16, 2018Publication date: May 6, 2021Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Takayuki IKEDA, Yoshiyuki KUROKAWA, Shintaro HARADA, Hidetomo KOBAYASHI, Roh YAMAMOTO, Kiyotaka KIMURA, Takashi NAKAGAWA, Yusuke NEGORO
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Publication number: 20210065640Abstract: A display device with favorable display quality is provided. A display portion where a plurality of pixels is arranged in a matrix is divided into Region A and Region B, i.e., regions on the upstream side and the downstream side of a scanning direction. A signal line for supplying an image signal is provided in each of Region A and Region B. Region A and Region B adjoin each other such that a boundary line showing the boundary between the regions is bent. Bending the boundary line suppresses formation of a stripe in a boundary portion. For example, in a given column, the total number of pixels electrically connected to a signal line in Region A is made different from the total number of pixels electrically connected to a signal line in Region B.Type: ApplicationFiled: June 15, 2020Publication date: March 4, 2021Inventors: Hidetomo KOBAYASHI, Kei TAKAHASHI, Shunpei YAMAZAKI
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Patent number: 10897258Abstract: An object is to provide a semiconductor device that can maintain the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units even after supply of power supply voltage is stopped. Another object is to provide a semiconductor device in which the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units can be changed at high speed. In a reconfigurable circuit, an oxide semiconductor is used for a semiconductor element that stores data on the circuit configuration, connection relation, or the like. Specifically, the oxide semiconductor is used for a channel formation region of the semiconductor element.Type: GrantFiled: December 6, 2019Date of Patent: January 19, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masashi Fujita, Yutaka Shionoiri, Kiyoshi Kato, Hidetomo Kobayashi