Abstract: A semiconductor device including a test circuit is miniaturized. The semiconductor device includes r first input terminals (r is an integer of 2 or more), a second input terminal, r functional circuits, a demultiplexer, and a switch circuit. The demultiplexer is a pass transistor logic circuit. R output terminals of the demultiplexer are electrically connected to respective input terminals of the functional circuit and the input terminal is electrically connected to the second input teiminal. Input terminals of the r circuits are electrically connected to the respective first input terminals through the switch circuit. For example, a signal for verification is input to the first input terminal in verification of the functional circuit to operate the demultiplexer. One signal for verification is input to r functional circuits by the demultiplexer.

Abstract: Display quality is improved. A display device includes a display controller and a display panel provided with m×n pixels. The display controller includes the step of comparing first display data, which is displayed in a first pixel connected to the i-th signal line and the (j?1)-th scan line, with second display data, which is displayed in a second pixel connected to the i-th signal line and the j-th scan line, and calculating an absolute value of a difference value, the step of extracting a maximum value from a result of the absolute value, and the step of determining a first selection period of the j-th scan line in accordance with the maximum value.

Abstract: A display device with favorable display quality is provided. A display portion where a plurality of pixels is arranged in a matrix is divided into Region A and Region B, i.e., regions on the upstream side and the downstream side of a scanning direction. A signal line for supplying an image signal is provided in each of Region A and Region B. Region A and Region B adjoin each other such that a boundary line showing the boundary between the regions is bent. Bending the boundary line suppresses formation of a stripe in a boundary portion. For example, in a given column, the total number of pixels electrically connected to a signal line in Region A is made different from the total number of pixels electrically connected to a signal line in Region B.

Abstract: The display evenness of a large or high-resolution display device is improved. The display device includes a source driver, a first gate driver, a second gate driver, a first pixel, and a second pixel. The first pixel is electrically connected to the source driver and the first gate driver. The second pixel is electrically connected to the source driver and the second gate driver. The first pixel is located closer to the source driver than the second pixel is. The first gate driver has a function of supplying a first write signal to the first pixel. The second gate driver has a function of supplying a second write signal to the second pixel. The pulse width of the second write signal is larger than the pulse width of the first write signal.

Abstract: The display evenness of a large or high-resolution display device is improved. Provided is a display device which includes a source driver, a gate driver, a first pixel, and a second pixel. The first pixel and the second pixel are electrically connected to the source driver and the gate driver. The first pixel is located closer to the source driver than the second pixel is. The gate driver has a function of supplying write signals to the first pixel and the second pixel. The pulse width of the write signal supplied to the second pixel is larger than the pulse width of the write signal supplied to the first pixel.

Abstract: Provided is a structure which is capable of central control of an electric device and a sensor device and a structure which can reduce power consumption of an electric device and a sensor device. A central control system includes at least a central control device, an output unit, and an electric device or a sensor device. The central control device performs arithmetic processing on information transmitted from the electric device or the sensor device and makes the output unit output information obtained by the arithmetic processing. It is possible to know the state of the electric device or the sensor device even apart from the electric device or the sensor device. The electric device or the sensor device includes a transistor which includes an activation layer using a semiconductor with the band gap wider than that of single crystal silicon.

Abstract: A display device that can be easily and more flexibly designed is provided. The display device includes a pixel circuit and a driver circuit in a display portion. The driver circuit includes a plurality of pulse output circuits. Each of the plurality of pulse output circuits has a function of driving a gate line. The pixel circuit is electrically connected to the gate line. Each of the plurality of pulse output circuits includes a first transistor. The pixel circuit includes a second transistor. A layer including the second transistor is over a layer including the first transistor, and the first transistor and the second transistor overlap with each other.

Abstract: A command sequence is restarted from the middle even when supply of power supply voltage to an internal circuit in a wireless tag is temporarily stopped (a power flicker occurs). A register or a cache memory included in a signal processing circuit in the wireless tag continues to retain data even after the supply of power supply voltage is stopped. After the power flicker occurs, the signal processing circuit in the wireless tag is returned to the state before the supply of power supply voltage is stopped and can restart signal processing. Consequently, the command sequence can be restarted from the middle.

Abstract: The display device includes a pixel and a driver circuit. The driver circuit includes a receiving circuit, a controller, a switching control circuit, and a signal generation circuit. The receiving circuit outputs image data obtained by converting differential signals into parallel data to the controller. The receiving circuit includes a plurality of circuits each including a first amplifier and a second amplifier. The first amplifier and the second amplifier each include a switch and a first transistor for supplying a bias current. The switch has a function of controlling electrical continuity between a wiring for supplying a bias voltage and a gate of the first transistor. The switching control circuit has a function of outputting a switching signal for controlling electrical continuity of the switch.

Abstract: Provided is a structure which is capable of central control of an electric device and a sensor device and a structure which can reduce power consumption of an electric device and a sensor device. A central control system includes at least a central control device, an output unit, and an electric device or a sensor device. The central control device performs arithmetic processing on information transmitted from the electric device or the sensor device and makes the output unit output information obtained by the arithmetic processing. It is possible to know the state of the electric device or the sensor device even apart from the electric device or the sensor device. The electric device or the sensor device includes a transistor which includes an activation layer using a semiconductor with the band gap wider than that of single crystal silicon.

Abstract: An object is to provide a semiconductor device that can maintain the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units even after supply of power supply voltage is stopped. Another object is to provide a semiconductor device in which the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units can be changed at high speed. In a reconfigurable circuit, an oxide semiconductor is used for a semiconductor element that stores data on the circuit configuration, connection relation, or the like. Specifically, the oxide semiconductor is used for a channel formation region of the semiconductor element.

Abstract: An object is to provide a semiconductor device that can maintain the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units even after supply of power supply voltage is stopped. Another object is to provide a semiconductor device in which the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units can be changed at high speed. In a reconfigurable circuit, an oxide semiconductor is used for a semiconductor element that stores data on the circuit configuration, connection relation, or the like. Specifically, the oxide semiconductor is used for a channel formation region of the semiconductor element.

Abstract: Objects are to provide a semiconductor device with a novel structure, to provide a semiconductor device with low power consumption, and to provide a semiconductor device with a small chip area. A digital-analog converter and a frame memory are included. The frame memory includes a sample-and-hold circuit, a correction circuit, and a source follower circuit. The sample-and-hold circuit retains the analog voltage output from the digital-analog converter. The correction circuit corrects the analog voltage retained in the sample-and-hold circuit. The source-follower circuit outputs the corrected analog voltage. The sample-and-hold-circuit, the correction circuit, and the source follower circuit each comprise a first transistor. The first transistor comprises an oxide semiconductor layer in a semiconductor layer.

Abstract: In a logic circuit where clock gating is performed, the standby power is reduced or malfunction is suppressed. The logic circuit includes a transistor which is in an off state where a potential difference exists between a source terminal and a drain terminal over a period during which a clock signal is not supplied. A channel formation region of the transistor is formed using an oxide semiconductor in which the hydrogen concentration is reduced. Specifically, the hydrogen concentration of the oxide semiconductor is 5×1019 (atoms/cm3) or lower. Thus, leakage current of the transistor can be reduced. As a result, in the logic circuit, reduction in standby power and suppression of malfunction can be achieved.

Abstract: A semiconductor device capable of retaining data for a long time is provided. The semiconductor device includes first to third transistors, a fourth transistor including first and second gates, first to third nodes, a capacitor, and an input terminal. A source of the first transistor is connected to the input terminal. A drain of the first transistor and a source of the second transistor are connected to the first node. A gate of the second transistor, a drain of the second transistor, and a source of the third transistor are connected to the second node. A gate of the third transistor, a drain of the third transistor, the capacitor, and the second gate of the fourth transistor are connected to the third node.

Abstract: To achieve versatility, a driver IC has a function of generating an analog data signal from an image signal input from the outside; a function of outputting the analog data signal from an output pin; and a function of setting the analog data signal as a data signal for alternating-current driving or for direct-current driving, in accordance with data of a digital signal input from the outside. For example, the driver IC can output data signals for alternating-current driving from output pins in odd-numbered columns and data signals for direct-current driving from output pins in even-numbered columns. Furthermore, the driver IC can output data signals for alternating-current driving or for direct-current driving from all the output pins. The driver IC can drive a liquid crystal panel, a self-luminous panel, and a hybrid display panel where one subpixel includes a liquid crystal element and a light-emitting element.

Abstract: A command sequence is restarted from the middle even when supply of power supply voltage to an internal circuit in a wireless tag is temporarily stopped (a power flicker occurs). A register or a cache memory included in a signal processing circuit in the wireless tag continues to retain data even after the supply of power supply voltage is stopped. After the power flicker occurs, the signal processing circuit in the wireless tag is returned to the state before the supply of power supply voltage is stopped and can restart signal processing. Consequently, the command sequence can be restarted from the middle.

Abstract: A microcontroller which operates in a low power consumption mode is provided. A microcontroller includes a CPU, a memory, and a peripheral circuit such as a timer circuit. A register in the peripheral circuit is provided in an interface with a bus line. A power gate for controlling supply control is provided. The microcontroller can operate not only in a normal operation mode where all circuits are active, but also in a low power consumption mode where some of the circuits are active. A volatile memory and nonvolatile memory are provided in a register, such as a register of the CPU. Data in the volatile memory is backed up in the nonvolatile memory before the power supply is stopped. In the case where the operation mode returns to the normal mode, when power supply is started again, data in the nonvolatile memory is written back into the volatile memory.

Abstract: A signal processing circuit includes a memory and a control portion configured to control the memory. The control portion includes a volatile memory circuit including data latch terminals, a first non-volatile memory circuit electrically connected to one of the data latch terminals, a second non-volatile memory circuit electrically connected to the other of the data latch terminals, and a precharge circuit having a function of supplying a potential that is a half of a high power supply potential to the one and the other of the data latch terminals. Each of the first non-volatile memory circuit and the second non-volatile memory circuit includes a transistor having a channel formation region including an oxide semiconductor and a capacitor connected to a node that is brought into a floating state by turning off the transistor.

Abstract: A source line through which a video signal is transmitted also serves as a driving electrode of a touch sensor. To perform display, a video signal is transmitted to the source line. To sense the touch, a driving signal is transmitted to the source line. A circuit for transmitting the video signal and the driving signal to the source line has a structure in which a period for transmitting the driving signal is added in the wiring through which the digital video signal is transmitted and the output to the source line is switched by using a switching circuit. Alternatively, the circuit has a structure in which a period for transmitting the driving signal is added in a wiring through which a latch signal is transmitted and the output to the source line is switched.