Abstract: According to a photodetector includes a first light detection layer and a reflective layer. The first light detection layer has a first surface and a second surface on a side opposite to the first surface. The first light detection layer includes a first light detection area including a p-n junction of a p-type semiconductor layer containing Si and an n-type semiconductor layer containing Si. The reflective layer arranged on a second surface side of the first light detection layer so as to be opposed to the first light detection area. The reflective layer reflects at least part of light in a near-infrared range.

Abstract: According to an embodiment, a noise removing device includes a first difference detector and a second difference detector. The first difference detector detects a difference between a first reset signal at a first timing and a second reset signal at a second timing after a predetermined period of time has elapsed from the first timing. The second difference detector subtracts the difference detected by the first difference detector from a main signal between the first reset signal and the second reset signal, and outputs a subtraction result.

Abstract: According to an embodiment, a color filter array includes a plurality of color filters of multiple colors. The color filters are arranged so that each of the color filter of each color corresponds to any one of a plurality of microlenses included in a microlens array. Each microlens is configured to irradiate a plurality of pixels with light.

Abstract: An integrator according to an embodiment includes first and second nodes, first to fifth switches, first and second main integration capacitors, and a first subsidiary integration capacitor. The first (second, third, fourth, fifth) switch has one end connected to a first (third, first, fourth, first) node and the other end connected to a third (second, fourth, second, fifth) node. The first main integration capacitor has one end connected to the third node and the other end connected to a standard voltage line. The second main integration capacitor has one end connected to the fourth node and the other end connected to the standard voltage line. The first subsidiary integration capacitor that has one end connected to the fifth node and the other end connected to the standard voltage line.

Abstract: According to an embodiment, a microlens array for a solid-state image sensing device includes a plurality of microlenses and a state detector. The plurality of microlenses are disposed in an imaging microlens area and is configured to form two-dimensional images. The state detector is disposed on a periphery of the imaging microlens area and is configured to, on an image forming surface of the microlenses, generate images having a smaller diameter than images formed by the microlenses.

Abstract: A photodetector according to an embodiment includes: a first semiconductor layer of a first conductivity type, including a first surface and a second surface that is opposite to the first surface; a second semiconductor layer of a second conductivity type, disposed on the second surface; and at least one photo-sensing device including a region in the first semiconductor layer, a region in the second semiconductor layer, and a first electrode disposed in a first region of the first surface.

Abstract: A current detection circuit according to one embodiment includes a low-pass filter, a voltage-to-current converter circuit, and a comparator. The low-pass filter has a first terminal connected to a signal input terminal to which a signal current is input. The voltage-to-current converter circuit has a first terminal connected to a second terminal of the low-pass filter and has a second terminal connected to the signal input terminal. The comparator has a first input terminal and a second input terminal and outputs a signal according to a difference between a signal input through the first input terminal and a signal input through the second input terminal, the first input terminal being connected to the second terminal of the low-pass filter, and the second input terminal being connected to the second terminal of the voltage-to-current converter circuit.

Abstract: An integrator according to an embodiment includes first and second nodes, first to fifth switches, first and second main integration capacitors, and a first subsidiary integration capacitor. The first (second, third, fourth, fifth) switch has one end connected to a first (third, first, fourth, first) node and the other end connected to a third (second, fourth, second, fifth) node. The first main integration capacitor has one end connected to the third node and the other end connected to a standard voltage line. The second main integration capacitor has one end connected to the fourth node and the other end connected to the standard voltage line. The first subsidiary integration capacitor that has one end connected to the fifth node and the other end connected to the standard voltage line.

Abstract: According to an embodiment, a signal processor includes an integrator, a differentiator, a zero cross detector, a pile-up detector, an event interval detector, a counter, and a creator. The integrator is configured to calculate charge of current from a photoelectric converter for an incident radiation. The differentiator is configured to calculate a differential value of the current. The zero cross detector is configured to detect a zero cross of the differential value. The pile-up detector is configured to detect pile-up of the current based on the zero cross. The event interval detector is configured to detect, based on the zero cross and pile-up, an event interval of the radiation entering. The counter is configured to count, based on the charge and pile-up, the respective numbers of events according to the charge and the event interval. The creator is configured to create histograms for the numbers of events.

Abstract: According to an embodiment, a radiation measuring apparatus includes a detector, comparators, a threshold controller, counters, and a generator. The detector includes plural detecting elements each configured to convert energy of incident radiation into a first electrical signal. The comparators correspond to the respective detecting elements, each comparator being configured to output a second electrical signal when a level of the corresponding first electrical signal is not less than a threshold. The threshold controller is configured to supply a first value as the threshold to the respective comparators at a first time, and supply a second value as the threshold to the respective comparators at a second time. The counters correspond to the respective comparators, each counter being configured to count the corresponding second electrical signal. The generator is configured to generate a pulse height frequency distribution of the radiation by using counts of the counters.

Abstract: A pulse detection circuit according to an embodiment includes a conversion circuit, a delay circuit, first and second comparators, a latch, and a generation circuit. The conversion circuit converts an input signal into a thermometer code signal. The delay circuit outputs a delay signal being the thermometer code signal delayed by a predetermined delay time. The first comparator (The second comparator) compares the thermometer code signal with the delay signal and outputs an increase signal (a decrease signal) indicating whether the input signal is larger (smaller) than the input signal before the delay time. Based on the increase signal and the decrease signal, the latch outputs an increase-decrease signal indicating whether the input signal is increasing or decreasing. Based on the thermometer code signal and the increase-decrease signal, the generation circuit generates a pulse detection signal and a pileup detection signal.

Abstract: According to one embodiment, a solid state imaging device includes a first imaging device, a second imaging device, and a calculating unit. The first imaging device includes a first optical system, a first imaging unit, and a second optical system provided between the first optical system and the first imaging unit. The second imaging device includes a third optical system, a second imaging unit, and a fourth optical system provided between the third optical system and the second imaging unit. The calculating unit is configured to perform a first calculation and a second calculation. The first calculation includes deriving a first distance from stereo disparity. The second calculation includes deriving a second distance from a parallax image. The calculating unit is configured to estimate a target distance based on at least one selected from the first distance and the second distance.

Abstract: A solid state imaging device according to an embodiment includes: a liquid crystal optical element including a first electrode having a first recess and a projecting portion surrounding the first recess on a first surface, a second electrode facing the first surface of the first electrode, a filling film located between the first recess of the first electrode and the second electrode, and a liquid crystal layer located between the filling film and the second electrode; an imaging lens facing the second electrode to form an image of a subject on an imaging plane; and an imaging element facing the first recess, the imaging element having a pixel block having a plurality of pixels.

Abstract: According to an embodiment, a circuit includes a shunt and a controller. The shunt shunts input current into a plurality of current paths. The controller controls a gain of current inputted to the shunt by combining the current that is shunted into the current paths by the shunt in combination corresponding to a first signal from the outside or changing a shunt ratio with which the shunt shunts the current into the current paths corresponding to the first signal.

Abstract: According to an embodiment, a photon detector includes a photoelectric converter, a voltage supplier, a potential variation detector, and an adjustor. The photoelectric converter performs photoelectric conversion based on an incident photon and outputs current corresponding to number of photons. The voltage supplier supplies a voltage to the photoelectric converter. The potential variation detector detects potential variation of a cathode of the photoelectric converter. The adjustor adjusts a potential of an anode of the photoelectric converter based on the potential variation detected by the potential variation detector so that variation in a potential difference between the cathode and the anode of the photoelectric converter is reduced, and outputs current from the photoelectric converter to the outside.

Abstract: According to an embodiment, a semiconductor device includes a silicon substrate, a photoelectric conversion layer, a termination layer, and an electrode layer. In the silicon substrate, first semiconductor regions and second semiconductor regions are alternately arranged along a first surface on a light incident side of the silicon substrate. The first semiconductor regions are doped with impurities of first concentration and have a conductivity of either one of p-type and n-type. The second semiconductor regions are doped with impurities of a second concentration lower than the first concentration and have a conductivity of the other type. The photoelectric conversion layer is disposed on a first surface side of the silicon substrate. The termination layer is disposed between the silicon substrate and the photoelectric conversion layer, in contact with the first surface, and to terminate dangling bonds of the silicon substrate. The electrode layer is provided on the light incident side.

Abstract: A waveform shaping filter according to an embodiment includes at least one filter stage and a control circuit. The filter stage includes a differentiation signal generation circuit, a proportional signal generation circuit, and an adder circuit. The differentiation signal generation circuit generates a differentiation signal obtained by amplifying a differentiation component of an input signal. The proportional signal generation circuit generates a proportional signal obtained by amplifying the input signal. The adder circuit outputs an output signal obtained by adding the proportional signal and the differentiation signal. The control circuit compares the output signal and a first detection level, detects at least one of an overshoot and an undershoot of the output signal, and controls a time constant of the filter stage, based on a detection result.

Abstract: An imaging device includes a light source which irradiates an infrared light including one or more wavelength to a subject; a lens which forms an image of the infrared light transmitting the subject or being reflected from the subject; an infrared detection device including a plurality of pixels which are sensitive to the wavelength; and a filter array which is provided in proximity to the infrared detection device between the lens and the infrared detection device and including a plurality of wavelength filters having different transmission wavelengths.

Abstract: An imaging device includes a light source which irradiates an infrared light including one or more wavelength to a subject; a lens which forms an image of the infrared light transmitting the subject or being reflected from the subject; an infrared detection device including a plurality of pixels which are sensitive to the wavelength; and a filter array which is provided in proximity to the infrared detection device between the lens and the infrared detection device and including a plurality of wavelength filters having different transmission wavelengths.

Abstract: An apparatus includes: a current control unit to control an amount of constant current and supply a first and second constant currents to an infrared detection pixel; a constant current supply time control unit to control periods of time in which the first and second constant currents are supplied to the infrared detection pixel; an A-D converter to convert a first and second electrical signals from the infrared detection pixel into a first and second digital signals, the first and second electrical signals being generated when the first and second constant currents is supplied to the infrared detection pixel, respectively; a subtracting unit to calculate a difference between the first and second digital signals; and a determining unit to determine whether the infrared detection pixel is a defective pixel based on the absolute value of the difference calculated by the subtracting unit.