Abstract: A solid state imaging device according to an embodiment includes a photo detector arranged two-dimensionally in a semiconductor substrate, a readout circuit provided in the semiconductor substrate, a first photoelectric conversion layer provided above the photo detector, a plurality of first metal dots provided above the first photoelectric conversion layer, a second photoelectric conversion layer provided above the first metal dots, and a plurality of second metal dots provided above the second photoelectric conversion layer.

Abstract: An imaging device according to an embodiment includes: a semiconductor substrate; a reference pixel with a first concave portion disposed in a first portion of a surface of the semiconductor substrate; and one or more infrared detection pixels each configured to detect light with a second concave portion disposed in a second portion of the surface of the semiconductor substrate, the reference pixel being directly connected to the semiconductor substrate at a position where the first concave portion is not present, and including a first thermoelectric conversion unit configured to convert heat to an electric signal, the first thermoelectric conversion unit being disposed in the first concave portion and including a first thermoelectric conversion element, each infrared detection pixel including a second thermoelectric conversion unit being disposed in the second concave portion and including a second thermoelectric conversion element.

Abstract: A solid-state imaging device according to an embodiment includes: an imaging element including an imaging area formed with a plurality of pixel blocks each including pixels; a first optical system forming an image of an object on an imaging surface; and a second optical system re-forming the image, which has been formed on the imaging surface, on the pixel blocks corresponding to microlenses, the second optical system including a microlens array formed with the microlenses provided in accordance with the pixel blocks. The microlenses are arranged in such a manner that an angle ? between a straight line connecting center points of adjacent microlenses and one of a row direction and a column direction in which the pixels are aligned is expressed as follows: ?>sin?1(2dp/Dml), where Dml represents microlens pitch, and dp represents pixel pitch.

Abstract: According to an embodiment, a photodetector includes a plurality of photoelectric transducers, a plurality of resistors, and a plurality of resetting sections. Each of the photoelectric transducers is configured to output a detection signal resulting from, conversion of received light into an electric charge. Each of the resistors is connected in series with an output end of a corresponding photoelectric transducer at one end of the resistor. Each of the resetting sections is connected in parallel with a corresponding resistor and configured to bring the output end of the corresponding photoelectric transducer to a reset level in response to the detection signal.

Abstract: According to an embodiment, a signal processing device includes an integrator, a first analog-to-digital converter, and a histogram creator. The integrator is configured to integrate an electrical charge corresponding to electromagnetic waves. The first analog-to-digital converter is configured to perform an analog-to-digital conversion operation that generates digital data of the electrical charge using an integration output from the integrator, on a parallel with an integration operation performed by the integrator. The histogram creator is configured to create a histogram that represents an energy distribution of the electromagnetic waves, from the digital data generated by the first analog-to-digital converter.

Abstract: According to an embodiment, an image processing method is implemented in an imaging device that includes a microlens array including microlenses, a main lens configured to guide light from a photographic subject to the microlens array, and an image sensor configured to receive the light after passing through the main lens and the microlens array. The method includes: obtaining an image captured by the image sensor; setting, according to an image height, an arrangement of a microlens image of interest and comparison-target microlens images from among microlens images that are included in the image and that are formed by the microlenses; detecting an amount of image shift between the microlens image of interest and each of the comparison-target microlens images by comparing the microlens image of interest with the comparison-target microlens images; and calculating a distance corresponding to the microlens image of interest using the amounts of image shift.

Abstract: In a liquid crystal optical element, a first substrate includes a first main surface. A second substrate includes a second main surface opposed to the first main surface. First electrodes are provided on the first main surface. Common electrodes are provided on the second main surface. A liquid crystal layer is formed between the first main surface and the second main surface. A first alignment layer is formed between the first substrate and the liquid crystal layer. A second alignment layer is formed between the second substrate and the liquid crystal layer. The first alignment layer has an anchoring force that is weaker than an anchoring force of the second alignment layer.

Abstract: According to an embodiment, an imaging system includes an image sensor, an imaging lens, a microlens array, an irradiator, a distance information acquiring unit, and a controller. The microlens array includes multiple microlenses arranged with a predetermined pitch, the microlenses being respectively associated with pixel blocks. The irradiator emits light to project a pattern onto an object. The distance information acquiring unit acquires information on the distance in the depth direction to the object on the basis of a signal resulting from photoelectric conversion performed by the image sensor. The controller controls the irradiator so that images contained in a pattern that is reflected by the object and scaled down on the image sensor by the imaging lens and the microlenses are smaller than the arrangement pitch of images each formed on the image sensor by each microlens and larger than twice the pixel.

Abstract: A liquid crystal optical element includes a first electrode, a second electrode, a first alignment film, a second alignment film, spacers and a liquid crystal layer. The first electrode includes a plurality of lens parts. The second electrode opposes the first electrode. The first alignment film is formed between the first electrode and the second electrode. The second alignment film is formed between the first alignment film and the second electrode. The spacers are provided between the first electrode and the second electrode. The spacers are regularly arranged, each at edges of the lens parts. The liquid crystal layer is provided between the first alignment film and the second alignment film.

Abstract: According to one embodiment, a solid-state imaging device includes: a first inorganic photoelectric converter; a semiconductor substrate that includes a light-receiving face to which light is to be incident and a circuit-formed surface on which a circuit including a readout circuit is formed, the light-receiving face facing the first inorganic photoelectric converter, the semiconductor substrate including a second inorganic photoelectric converter thereinside; and a first part including a microstructure arranged between the first inorganic photoelectric converter and the second inorganic photoelectric converter.

Abstract: According to an embodiment, a filter-array-equipped microlens includes a filter array and a microlens array. The filter array includes a plurality of first optical filters for selectively transmitting light of an infrared region and a plurality of second optical filters for selectively transmitting light of a first visible wavelength region. The microlens array includes a plurality of microlenses each corresponding to any one of the first optical filters and the second optical filters.

Abstract: A current detection circuit according to one embodiment includes a low-pass filter, a voltage-to-current converter circuit, and a comparator. The low-pass filter has a first terminal connected to a signal input terminal to which a signal current is input. The voltage-to-current converter circuit has a first terminal connected to a second terminal of the low-pass filter and has a second terminal connected to the signal input terminal. The comparator has a first input terminal and a second input terminal and outputs a signal according to a difference between a signal input through the first input terminal and a signal input through the second input terminal, the first input terminal being connected to the second terminal of the low-pass filter, and the second input terminal being connected to the second terminal of the voltage-to-current converter circuit.

Abstract: According to one embodiment, a solid state imaging device includes a sensor substrate having a plurality of pixels formed on an upper face, a microlens array substrate having a plurality of microlenses formed and a connection post with one end bonded to a region between the microlenses on the microlens array substrate and with the other end bonded to the upper face.

Abstract: An imaging device according to an embodiment includes: a semiconductor substrate; a reference pixel with a first concave portion disposed in a first portion of a surface of the semiconductor substrate; and one or more infrared detection pixels each configured to detect light with a second concave portion disposed in a second portion of the surface of the semiconductor substrate, the reference pixel being directly connected to the semiconductor substrate at a position where the first concave portion is not present, and including a first thermoelectric conversion unit configured to convert heat to an electric signal, the first thermoelectric conversion unit being disposed in the first concave portion and including a first thermoelectric conversion element, each infrared detection pixel including a second thermoelectric conversion unit being disposed in the second concave portion and including a second thermoelectric conversion element.

Abstract: A radiation detection apparatus according to an embodiment includes: a scintillator; a photon detection device array including a plurality of cells each being a photon detection device with an avalanche photodiode configured to detect visible radiation photons emitted from the scintillator and a resistor disposed along a part of a periphery of an active region of the avalanche photodiode; and a reflector configured to reflect a visible radiation photon and disposed in a region that does not include the active regions and the resistors of the cells, on a face including the active regions.

Abstract: According to an embodiment, a solid-state imaging device includes: an imaging device including an imaging area including a plurality of pixel blocks each of which includes a plurality of pixels; an image formation lens forming an image on an image formation plane by using light from a subject; an aperture unit including a plurality of aperture elements provided to associate with the plurality of pixel blocks, each of the aperture elements having an aperture portion and a shield portion, light from the image formation lens being filtered by each aperture element; a microlens array including a plurality of microlenses provided to associate with the plurality of aperture elements, each of the microlenses forming an image in the imaging area by using light filtered by an associated aperture element; and a signal processing circuit configured to process a signal of an image taken in the imaging area and estimates a distance to the subject.

Abstract: A solid-state imaging device according to an embodiment includes: an imaging element including an imaging area formed with a plurality of pixel blocks each including pixels; a first optical system forming an image of an object on an imaging surface; and a second optical system re-forming the image, which has been formed on the imaging surface, on the pixel blocks corresponding to microlenses, the second optical system including a microlens array formed with the microlenses provided in accordance with the pixel blocks. The microlenses are arranged in such a manner that an angle ? between a straight line connecting center points of adjacent microlenses and one of a row direction and a column direction in which the pixels are aligned is expressed as follows: ?>sin?1(2dp/Dml), where Dml represents microlens pitch, and dp represents pixel pitch.

Abstract: A microlens array unit according to an embodiment includes: a substrate; a first group of microlenses including first microlenses having a convex shape and a first focal length, the first group of microlenses being arranged on the substrate; and a second group of microlenses including second microlenses having a convex shape and a second focal length different from the first focal length, the second group of microlenses being arranged on the substrate, a first imaging plane of the first group of microlenses and a second imaging plane of the second group of microlenses being parallel to each other, a distance between the first and second imaging planes in a direction perpendicular to the first imaging plane being 20% or less of the first focal length, and images of the first microlenses projected on the substrate not overlapping images of the second microlenses projected on the substrate.

Abstract: There is provided a single to differential conversion circuit including: a divider circuit, first and second bias current generators, first and second output terminals and a current generating circuit. The divider circuit receives an input current including a DC component and an AC component and divides the input current to generate a first current and a second current. The first bias current generator generates a first bias current. The first output terminal outputs a first output current depending on a difference between the first current and the first bias current. The current generating circuit generates a third current which has a sign opposite to the second current on the basis of the second current. The second bias current generator generates a second bias current. The second output terminal outputs a second output current depending on a difference between the third current and the second bias current.

Abstract: A solid-state imaging device according to an embodiment includes: an imaging element formed on a semiconductor substrate, and comprising an imaging region including a plurality of pixel blocks each including a plurality of pixels; a first optical system forming an image of an object on an imaging plane; and a second optical system comprising a microlens array including a plurality of microlenses each corresponding to one of the pixel blocks, and reducing and re-forming the image to be formed on the imaging plane on the pixel blocks corresponding to the respective microlenses. The imaging plane of the first optical system is located further away from the first optical system than the imaging element when the object is located at an infinite distance.