Abstract: A radiation detection apparatus according to an embodiment includes: a scintillator including a fluorescent material to convert radiation to visible radiation photon; a photon detection device array having a plurality of cells each of which includes a photon detection device to detect visible radiation photon emitted from a fluorescent material in the scintillator and convert the visible radiation photon to an electric signal; and a plurality of lenses provided on cells respectively in association with the cells to cause the visible radiation photon to be incident on the photon detection device in an associated cell.

Abstract: An infrared imaging element of an embodiment includes: a first pixel portion including a first cell portion including a first infrared ray detecting portion detecting a first infrared ray and a second infrared ray with a wavelength different from a wavelength of the first infrared ray, and first supporting legs that support the first cell portion, the first supporting legs including a first and second wiring lines that convey an electrical signals obtained by the first infrared ray detecting portion; and a second pixel portion including a second cell portion including a second infrared ray detecting portion detecting the second infrared ray, and second supporting legs that support the second cell portion, the second supporting legs including a third and fourth wiring lines that convey an electrical signal obtained by the second infrared ray detecting portion.

Abstract: According to an embodiment, a noise removing device includes a first difference detector and a second difference detector. The first difference detector detects a difference between a first reset signal at a first timing and a second reset signal at a second timing after a predetermined period of time has elapsed from the first timing. The second difference detector subtracts the difference detected by the first difference detector from a main signal between the first reset signal and the second reset signal, and outputs a subtraction result.

Abstract: In one embodiment, a buffer circuit includes a first transistor, a second transistor, a first current source, a third transistor, a fourth transistor, a second current source, and a third current source. The first transistor has a control terminal connected to an input terminal, and a first terminal connected to an output terminal. The second transistor has a control terminal connected to the input terminal, a first terminal connected to the output terminal, and a second terminal connected to a first power source. The third transistor has a first terminal connected to the output terminal. The fourth transistor has a first terminal connected to the second terminal of the first transistor, a control terminal applied bias voltage, and a second terminal connected to a control terminal of the third transistor.

Abstract: In one embodiment, a differential amplifier circuit includes a first input terminal, a second input terminal, a first transistor, a second transistor, a third transistor, a current source, a first output terminal, a second output terminal, a first passive element, and a second passive element. The first (second) transistor has a control terminal connected to the first (second) input terminal. The third transistor has a control terminal. The control terminal is applied predetermined bias voltage. The current source is connected to a first terminal in each of the first transistor, second transistor, and third transistor. The first (second) output terminal is connected to a second terminal of the first (second) transistor. The first (second) passive element is connected between the first (second) input terminal and the first (second) output terminal.

Abstract: According to an embodiment, a signal processing device includes an integrator, a first analog-to-digital converter, and a histogram creator. The integrator is configured to integrate an electrical charge corresponding to electromagnetic waves. The first analog-to-digital converter is configured to perform an analog-to-digital conversion operation that generates digital data of the electrical charge using an integration output from the integrator, on a parallel with an integration operation performed by the integrator. The histogram creator is configured to create a histogram that represents an energy distribution of the electromagnetic waves, from the digital data generated by the first analog-to-digital converter.

Abstract: According to an embodiment, a signal processing device includes an integrator, a setting unit, and an analog-to-digital converter. The integrator is configured to integrate an electrical charge corresponding to electromagnetic waves. The integrator includes a capacitor configured to store the electrical charge corresponding to the electromagnetic waves and a discharging circuit configured to discharge the capacitor. The setting unit is configured to set a period of integration of the electrical charge with respect to the integrator. The analog-to-digital converter includes a comparator configured to compare an integration output and a threshold value and a counter configured to output, as digital data of the electrical charge, the number of times for which a value of the integration output becomes not less than the threshold value. The converter is configured to discharge the capacitor during the period of integration by supplying a comparison output of the comparator to the discharging circuit.

Abstract: According to an embodiment, a signal processing device includes an integrator, a setting unit, and an analog-to-digital converter. The integrator is configured to integrate an electrical charge corresponding to electromagnetic waves. The integrator includes a capacitor configured to store the electrical charge corresponding to the electromagnetic waves and a discharging circuit configured to discharge the capacitor. The setting unit is configured to set a period of integration of the electrical charge with respect to the integrator. The analog-to-digital converter includes a comparator configured to compare an integration output and a threshold value and a counter configured to output, as digital data of the electrical charge, the number of times for which a value of the integration output becomes not less than the threshold value. The converter is configured to discharge the capacitor during the period of integration by supplying a comparison output of the comparator to the discharging circuit.

Abstract: According to an embodiment, a color filter array includes a plurality of color filters of multiple colors. The color filters are arranged so that each of the color filter of each color corresponds to any one of a plurality of microlenses included in a microlens array. Each microlens is configured to irradiate a plurality of pixels with light.

Abstract: According to an embodiment, a microlens array for a solid-state image sensing device includes a plurality of microlenses and a state detector. The plurality of microlenses are disposed in an imaging microlens area and is configured to form two-dimensional images. The state detector is disposed on a periphery of the imaging microlens area and is configured to, on an image forming surface of the microlenses, generate images having a smaller diameter than images formed by the microlenses.

Abstract: According to one embodiment, an imaging lens includes a first optical system and a microlens array. The first optical system includes an optical axis. The microlens array is provided between the first optical system and an imaging element. The microlens array includes microlens units provided in a first plane. The imaging element includes pixel groups. Each of the pixel groups includes pixels. The microlens units respectively overlap the pixel groups when projected onto the first plane. The first optical system includes an aperture stop, and first, second, and third lenses. The first lens is provided between the aperture stop and the microlens array, and has a positive refractive power. The second lens is provided between the first lens and the microlens array, and has a negative refractive power. The third lens is provided between the second lens and the microlens array, and has a positive refractive power.

Abstract: According to one embodiment, an imaging lens includes a first optical system and a microlens array. The first optical system includes an optical axis. The microlens array is provided between the first optical system and an imaging element. The microlens array includes microlens units provided in a first plane. The imaging element includes pixel groups. Each of the pixel groups includes pixels. The microlens units respectively overlap the pixel groups when projected onto the first plane. The first optical system includes an aperture stop, a first lens, a second lens, a third lens, and a fourth lens. The first lens is provided between the aperture stop and the microlens array. The second lens is provided between the first lens and the microlens array. The third lens is provided between the second lens and the microlens array. The fourth lens is provided between the third lens and the microlens array.

Abstract: According to one embodiment, a solid state imaging device includes a first imaging device, a second imaging device, and a calculating unit. The first imaging device includes a first optical system, a first imaging unit, and a second optical system provided between the first optical system and the first imaging unit. The second imaging device includes a third optical system, a second imaging unit, and a fourth optical system provided between the third optical system and the second imaging unit. The calculating unit is configured to perform a first calculation and a second calculation. The first calculation includes deriving a first distance from stereo disparity. The second calculation includes deriving a second distance from a parallax image. The calculating unit is configured to estimate a target distance based on at least one selected from the first distance and the second distance.

Abstract: According to one embodiment, a solid state imaging device includes an imaging substrate unit, a lens unit, and a color filter unit. The imaging substrate unit has a major surface including first region and second regions including pixels. The lens unit is separated from the major surface in a first direction perpendicular to the major surface. The lens unit includes a first lens overlapping the pixels of the first region when projected onto the major surface and a second lens overlapping the pixels of the second region when projected onto the major surface. The color filter unit is provided between the imaging substrate unit and the lens unit and is separated from the imaging substrate unit. The color filter unit includes a first color filter provided between the first region and the first lens, and a second color filter provided between the second region and the second lens.

Abstract: A solid-state imaging device according to an embodiment includes: an imaging element including a semiconductor substrate and a plurality of pixel blocks, each of the pixel blocks including at least two of R pixels, G pixels, B pixels, and W pixels; a first optical system configured to form an image of an object on an imaging plane; and a second optical system including a microlens array having a plurality of microlenses provided for the respective pixels blocks, the second optical system being located between the imaging element and the first optical system, the second optical system being configured to reduce and re-image the image formed on the imaging plane onto each of the pixel blocks. A proportion of the W pixels to be provided increases in a direction from a center of each pixel block toward an outer periphery thereof.

Abstract: There is provided an electromagnetic wave signal processor configured to process an input pulse signal corresponding to an electromagnetic wave, comprising a signal processing unit including: a peak detecting circuit to detect peak values of each amplitude of the input pulse signal; an AD converter to convert the peak values into digital signals; a memory device comprising memory cells each having an address assigned in accordance with each of values capable of being taken by the digital signals of the peak values, and being able to have any one of a plurality of internal states representing detection frequencies of the peak values; and a writing circuit to change the internal state in the memory cell that has the address corresponding to the value of each digital signal converted by the AD converter, so as to increment the detection frequency represented by the internal state.

Abstract: A solid state imaging device according to an embodiment includes: an imaging element including a plurality of pixels; a bonding layer formed to be in contact with the imaging element; a first microlens array formed to be in contact with the bonding layer, and including a plurality of first microlenses with a refractive index higher than a refractive index of the bonding layer; and a main lens located above the first microlens array.

Abstract: A solid state imaging device according to an embodiment includes: a liquid crystal optical element including a first electrode having a first recess and a projecting portion surrounding the first recess on a first surface, a second electrode facing the first surface of the first electrode, a filling film located between the first recess of the first electrode and the second electrode, and a liquid crystal layer located between the filling film and the second electrode; an imaging lens facing the second electrode to form an image of a subject on an imaging plane; and an imaging element facing the first recess, the imaging element having a pixel block having a plurality of pixels.

Abstract: A liquid crystal optical device includes: a first electrode unit including a first substrate transparent to light, a light-transmitting layer formed on the first substrate, and a first electrode formed on the light-transmitting layer and being transparent to light, the light-transmitting layer including recesses formed on a surface facing the first electrode, arranged in a first direction, and extending in a second direction; a second electrode unit including a second substrate, the second substrate being transparent to light, and two second electrodes formed on the second substrate, the second electrodes being arranged in the second direction and extending along the first direction; a liquid crystal layer located between the first and second electrode units; a first polarizing plate located on an opposite side of the second electrode unit from the liquid crystal layer; and a drive unit that applies voltages to the first and second electrodes.

Abstract: A microlens array unit according to an embodiment includes: a substrate; a first group of microlenses including first microlenses having a convex shape and a first focal length, the first group of microlenses being arranged on the substrate; and a second group of microlenses including second microlenses having a convex shape and a second focal length different from the first focal length, the second group of microlenses being arranged on the substrate, a first imaging plane of the first group of microlenses and a second imaging plane of the second group of microlenses being parallel to each other, a distance between the first and second imaging planes in a direction perpendicular to the first imaging plane being 20% or less of the first focal length, and images of the first microlenses projected on the substrate not overlapping images of the second microlenses projected on the substrate.