Abstract: A solid-state imaging device according to an embodiment includes: an imaging element including a semiconductor substrate and a plurality of pixel blocks, each of the pixel blocks including at least two of R pixels, G pixels, B pixels, and W pixels; a first optical system configured to form an image of an object on an imaging plane; and a second optical system including a microlens array having a plurality of microlenses provided for the respective pixels blocks, the second optical system being located between the imaging element and the first optical system, the second optical system being configured to reduce and re-image the image formed on the imaging plane onto each of the pixel blocks. A proportion of the W pixels to be provided increases in a direction from a center of each pixel block toward an outer periphery thereof.

Abstract: A solid-state imaging device according to an embodiment includes: an imaging element including a plurality of pixel blocks each containing a plurality of pixels; a first optical system forming an image of an object on an imaging plane; and a second optical system including a microlens array, the microlens array including a light transmissive substrate, a plurality of first microlenses formed on the light transmissive substrate, and a plurality of second microlenses formed around the first microlenses, a focal length of the first microlenses being substantially equal to a focal length of the second microlenses, an area of the first microlenses in contact with the light transmissive substrate being larger than an area of the second microlenses in contact with the light transmissive substrate, the second optical system being configured to reduce and reconstruct the image formed on the imaging plane on the pixel blocks via the microlens array.

Abstract: In one embodiment, a solid-state imaging device includes: an imaging optical system including: a first and second surfaces facing each other; a flat reflector provided on the first surface and having an aperture in an outer circumferential portion; and a plurality of reflectors provided on the second surface and located in a plurality of ring-like areas, each of the reflectors being inclined in a radial direction, the reflectors having different diameters from one another; and an imaging element module including: an imaging element including an imaging area having a plurality of pixel blocks each including a plurality of pixels, and receiving and converting light from the imaging optical system into image data; a visible light transmission substrate provided between the imaging optical system and the imaging element; a microlens array provided on a surface of the visible light transmission substrate on the imaging element side; and an image processing unit processing the image data obtained by the imaging ele

Abstract: According to one embodiment, an imaging device includes a substrate, a photodetecting portion, a circuit portion and a through interconnect. The substrate has a first major surface, a second major surface on a side opposite to the first major surface, a recess portion provided on the first major surface and retreated in a first direction going from the first major surface to the second major surface, and a through hole communicating with the first major surface and the second major surface and extending in the first direction. The photodetecting portion is provided above the recess portion and away from the substrate. The circuit portion is electrically connected to the photodetecting portion and provided on the first major surface. The through interconnect is electrically connected to the circuit portion and provided inside the through hole. The recess portion has a first inclined surface. The through hole has a second inclined surface.

Abstract: Certain embodiments provide a solid-state imaging device including: a plurality of pixels provided on a semiconductor substrate, each of the pixels having a semiconductor region that converts incident light from a side of a first face of the semiconductor substrate into signal charges and stores the signal charges; a readout circuit provided on a side of a second face that is the opposite side from the first face, and reading out the signal charges stored in the pixels; and a pixel separation structure provided between adjacent ones of the pixels in the semiconductor substrate, the pixel separation structure including a stack film buried in a trench extending from the first face, the stack film including a first insulating film provided along side faces and a bottom face of the trench, and a fixed charge film provided in the trench to cover the first insulating film and retaining fixed charges that are non-signal charges.

Abstract: An infrared solid state imaging device includes an infrared detection element unit having heat sensitive pixels, an AD conversion unit which conducts analog-to-digital conversion on an infrared image signal obtained by the infrared detection element unit, and a digital signal processing unit which converts the image signal converted to a digital signal. The digital signal processing unit stores an image value produced from the digital signal, and acquired in a frame immediately preceding a current frame, subtracts an image value obtained by multiplying the image value acquired in the frame immediately preceding the current frame by a predetermined constant ? in a range of 0 to 1, from an image value acquired in the current frame, and conducts processing of multiplying a resultant image value obtained by the subtraction by 1/(1??) so that an infrared image with less afterimage is provided.

Abstract: An infrared imaging element according to an embodiment includes: a semiconductor substrate including a stacked structure of a silicon first substrate, and a first insulation film, first cavities being provided on a surface of the first substrate; an infrared detection unit provided in the semiconductor substrate and including, detection cells provided respectively over the first cavities, each of the detection cells having diodes and a second insulation film, the first insulation film converting incident infrared rays to heat, the diodes converting the heat obtained by the first insulation film to an electric signal, a third insulation film having a top face located at a greater distance from the semiconductor substrate as compared with a top face of the second insulation film; and a second substrate provided over the third insulation film. A second cavity is formed between the second substrate and the infrared detection unit.

Abstract: A semiconductor memory includes a semiconductor substrate, a buried insulating film formed on a part of an upper surface of the semiconductor substrate, and a semiconductor layer formed on another part of the upper surface of the semiconductor substrate. Each of the memory cell transistors comprises a first-conductivity-type source region, a first-conductivity-type drain region, and a first-conductivity-type channel region arranged in the semiconductor layer in the column direction, and a gate portion formed on a side surface of the channel region in the row direction.

Abstract: According to one embodiment, a solid imaging device includes an imaging substrate, a light-shielding member and a AD conversion circuits. The imaging substrate is two-dimensionally arranged with a plurality of pixels. The plurality of pixels have a top face formed with an optoelectronic conversion element for converting incident light into an electric charge and storing it and a back face opposite to the top faces. The imaging substrate is formed with a top face by the top face of the plurality of pixels and formed with a back face by the back face of the plurality of pixels. The light-shielding member is provided on the top face side of the imaging substrate. The AD conversion circuits is formed on the back face of the pixels shielded from the light.

Abstract: According to one embodiment, a solid imaging device includes an imaging substrate, an imaging lens, a microlens array substrate and a polarizing plate array substrate. The imaging substrate has a plurality of pixels formed on an upper side thereof. The imaging lens is provided above the imaging substrate. The optical axis in the imaging lens intersects with the upper side of the imaging substrate. The microlens array substrate is provided between the imaging substrate and the imaging lens. A surface in the microlens array substrate has a plurality of microlenses arranged two-dimensionally. The surface of the microlens array intersects with the optical axis. The polarizing plate array substrate is provided between the imaging substrate and the imaging lens. The plurality of kinds of polarizing plates in the polarizing plate array substrate having polarization axes in mutually different directions are arranged two dimensionally.

Abstract: According to one embodiment, a camera shake correction device includes a substrate, a fixed part, a linking part, a movable part, a first spring part, a second spring part, a first damper, and a second damper. The fixed part is provided on the substrate and fixed to the substrate. The linking part is provided around the fixed part on the substrate that can move in a first direction within a plane of the substrate with respect to the fixed part. The movable part is provided on the substrate and arranged around the fixed part and the linking part that can move in a second direction that intersects with the first direction within the plane of the substrate.

Abstract: According to one embodiment, a solid state imaging device includes a sensor substrate curved such that an upper face having a plurality of pixels formed is recessed and an imaging lens provided on the upper face side.

Abstract: According to one embodiment, a solid state imaging device includes a sensor substrate having a plurality of pixels formed on an upper face, a microlens array substrate having a plurality of microlenses formed and a connection post with one end bonded to a region between the microlenses on the microlens array substrate and with the other end bonded to the upper face.

Abstract: An infrared imaging device according to an embodiment includes: an imaging area formed on a semiconductor substrate, the imaging area having a plurality of pixels arranged in a matrix form, the plurality of pixels including a plurality of reference pixels arranged in at least one row and a plurality of infrared detection pixels arranged in remaining rows to detect incident infrared rays, each of the reference pixels having a first thermoelectric conversion element, each of the infrared detection pixel having a thermoelectric conversion unit, the thermoelectric conversion unit having an infrared absorption film to absorb the incident infrared rays and convert the incident infrared rays to heat and a second thermoelectric conversion element to convert the heat obtained by the conversion conducted by the infrared absorption film to an electric signal.

Abstract: An uncooled infrared image sensor according to an embodiments includes: a plurality of pixel cells formed in a first region on a semiconductor substrate; a reference pixel cell formed in a second region on the semiconductor substrate and corresponding to each row or each column of the pixel cells; a supporting unit formed for each of the pixel cell and supporting a corresponding pixel cell; and an interconnect unit formed for each reference pixel cell. Each of the pixel cells includes: a first infrared absorption film and a first heat sensitive element. The reference pixel cell includes: a second infrared absorption film and a second heat sensitive element, the second heat sensitive element having the same characteristics as characteristics of the first heat sensitive element. The third and fourth interconnects of the interconnect unit have the same electrical resistance as electrical resistance of the first and second interconnects of the supporting unit.

Abstract: Certain embodiments provide a solid-state imaging device including: a photoelectric converting unit that includes a semiconductor layer of a second conductivity type provided on a semiconductor substrate of a first conductivity type, converts incident light entering a first surface of the semiconductor substrate into signal charges, and stores the signal charges; a readout circuit that reads the signal charges stored by the photoelectric converting unit; an antireflection structure that is provided on the first surface of the semiconductor substrate to cover the semiconductor layer of the photoelectric converting unit, includes a fixed charge film that retains fixed charges being non-signal charges, and prevents reflection of the incident light; and a hole storage region that is provided between the photoelectric converting unit and the antireflection structure, and stores holes being non-signal charges.

Abstract: Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure.

Abstract: A sensor apparatus for detecting a positional relationship includes a first electrode, an applying unit applying a charging signal with a first cycle period to the first electrode, a second electrode, a selecting unit selecting the first or second cycle period which have overlapped segment periods, an output unit outputting electrical signals supplied from the second electrode with the first cycle period, if the first cycle period is selected, and parts of the electrical signals during the segment periods, if the second cycle period is selected, a comparator comparing an amplitude of the electrical signals with a threshold value and generating a first or second comparison signal and a controller generating a proximity and non-proximity signal in response to the first and second comparison signal, respectively, so that the selecting unit selects the first and second cycle period in response to the proximity and non-proximity signal, respectively.

Abstract: One embodiment provides an infrared imaging device, including: a substrate; connection wiring portions arranged in matrix form on the substrate; a first infrared detecting portion configured to convert intensity of absorbed infrared radiation into a first signal; and a second infrared detecting portion configured to convert intensity of absorbed infrared radiation into a second signal, the second infrared detecting portion being larger in thermal conductance than the first infrared detecting portion.

Abstract: An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor.