Patents by Inventor Hideyuki Nishizawa
Hideyuki Nishizawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160087202Abstract: An organic molecular memory in an embodiment includes a first conductive layer; a second conductive layer; and an organic molecular layer provided between the first conductive layer and the second conductive layer, the organic molecular layer including an organic molecule having an oligophenylene ethynylene backbone, the oligophenylene ethynylene backbone including three or more benzene rings, and the oligophenylene ethynylene backbone including two fluorine atoms added in ortho positions or meta positions of one of the benzene rings other than benzene rings at both ends.Type: ApplicationFiled: September 1, 2015Publication date: March 24, 2016Applicant: Kabushiki Kaisha ToshibaInventors: Koji ASAKAWA, Yutaka Majima, Hideyuki Nishizawa, Yusuke Tanaka, Shigeki Hattori
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Publication number: 20160087067Abstract: A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a control gate electrode; and an organic molecular layer, which is provided between the semiconductor layer and the control gate electrode, and has organic molecules including a molecular structure described by a molecular formula (1).Type: ApplicationFiled: September 1, 2015Publication date: March 24, 2016Applicant: Kabushiki Kaisha ToshibaInventors: Shigeki HATTORI, Tsukasa TADA, Masaya TERAI, Hideyuki NISHIZAWA, Koji ASAKAWA, Yoshiaki FUKUZUMI
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Publication number: 20160087203Abstract: An organic molecular memory in an embodiment includes a first electrode having a first work function; a second electrode having a second work function; and an organic molecular layer provided between the first electrode and the second electrode, the organic molecular layer containing a first organic molecule chemically bonded to the first electrode, the first organic molecule having a resistance-change type molecular chain, and the first organic molecule having a first energy level higher than the first work function, and a second organic molecule chemically bonded to the second electrode and the second organic molecule having a second energy level higher than the second work function and lower than the first energy level.Type: ApplicationFiled: September 2, 2015Publication date: March 24, 2016Applicant: Kabushiki Kaisha ToshibaInventors: Hideyuki NISHIZAWA, Yusuke TANAKA, Koji ASAKAWA, Yutaka MAJIMA
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Patent number: 9276216Abstract: An organic molecular device of an embodiment includes a first and a second conductive layers and an organic molecular layer having an organic molecule provided between the first and the second conductive layer. The organic molecule includes a one-dimensional or quasi one-dimensional ?-conjugated system chain having either a first aromatic ring or a second aromatic ring. The first aromatic ring has one or more substituents that are an electron withdrawing group, each substituent of the first aromatic ring is independently selected from the group consisting of the electron withdrawing group and hydrogen, the second aromatic ring has one or more substituents that are an electron releasing group, and each substituent of the second aromatic ring is independently selected from the group consisting of the electron releasing group and hydrogen. The first aromatic ring or the second aromatic ring exist in an unbalanced manner in the ?-conjugated system chain.Type: GrantFiled: March 4, 2014Date of Patent: March 1, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Hideyuki Nishizawa, Shigeki Hattori, Yusuke Tanaka, Koji Asakawa
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Patent number: 9263687Abstract: An organic molecular memory in an embodiment includes a first conducive layer, a second conductive layer, and an organic molecular layer provided between the first conductive layer and the second conductive layer, the organic molecular layer having an organic molecule, the organic molecule having a linker group bonded to the first conductive layer, a ? conjugated chain bonded to the linker group, and a phenyl group bonded to the ? conjugated chain opposite to the linker group and facing the second conductive layer, the ? conjugated chain including electron-accepting groups or electron-donating groups arranged in line asymmetry with respect to a bonding direction of the ? conjugated chain, the phenyl group having substituents R0, R1, R2, R3, and R4 as shown in the following formula, the substituent R0 being an electron-accepting group or an electron-donating group.Type: GrantFiled: August 11, 2014Date of Patent: February 16, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Yusuke Tanaka, Hideyuki Nishizawa, Shigeki Hattori, Koji Asakawa
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Patent number: 9245969Abstract: A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a block insulating film; an organic molecular layer, which is formed between the semiconductor layer and the block insulating film, and provided with a first organic molecular film on the semiconductor layer side containing first organic molecules and a second organic molecular film on the block insulating film side containing second organic molecules, and in which the first organic molecule has a charge storing unit and the second organic molecule is an amphiphilic organic molecule; and a control gate electrode formed on the block insulating film.Type: GrantFiled: August 7, 2015Date of Patent: January 26, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Shigeki Hattori, Masaya Terai, Hideyuki Nishizawa, Koji Asakawa, Yoshiaki Fukuzumi
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Patent number: 9231132Abstract: A solar cell having on a light incident surface side an electrode with both low resistivity and high transparency to promote efficient excitation of carriers using inexpensive materials. The solar cell includes a photoelectric conversion layer, a first electrode layer arranged on the light incident surface side, and a second electrode layer arranged opposed to the first electrode layer. The first electrode layer has a thickness in the range of 10 to 200 nm, and plural penetrating openings, each of which occupies an area in the range of 80 nm2 to 0.8 ?m2, and has an aperture ratio in the range 10 to 66%. The first electrode layer can be produced by etching using an etching mask in the form of a single particle layer of fine particles, or of a dot pattern formed by self-assembly of a block copolymer, or of a stamper.Type: GrantFiled: September 27, 2013Date of Patent: January 5, 2016Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Kumi Masunaga, Akira Fujimoto, Tsutomu Nakanishi, Eishi Tsutsumi, Ryota Kitagawa, Koji Asakawa, Hideyuki Nishizawa
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Patent number: 9209263Abstract: A nonvolatile semiconductor memory device includes a semiconductor layer, a control gate electrode, and an organic molecular layer provided between the semiconductor layer and the control gate electrode and having an organic molecule including a porphyrin structure.Type: GrantFiled: March 16, 2015Date of Patent: December 8, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Shigeki Hattori, Masaya Terai, Hideyuki Nishizawa, Koji Asakawa, Yoshiaki Fukuzumi
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Publication number: 20150349081Abstract: A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a block insulating film; an organic molecular layer, which is formed between the semiconductor layer and the block insulating film, and provided with a first organic molecular film on the semiconductor layer side containing first organic molecules and a second organic molecular film on the block insulating film side containing second organic molecules, and in which the first organic molecule has a charge storing unit and the second organic molecule is an amphiphilic organic molecule; and a control gate electrode formed on the block insulating film.Type: ApplicationFiled: August 7, 2015Publication date: December 3, 2015Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Shigeki Hattori, Masaya Terai, Hideyuki Nishizawa, Koji Asakawa, Yoshiaki Fukuzumi
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Patent number: 9172053Abstract: An organic molecular memory for controlling a current flowing through a memory cell and achieving stable operation and high degree of reliability is provided. The organic molecular memory includes a first electrode, a second electrode made of a material different from the first electrode, and an organic molecule layer provided between the first electrode and the second electrode, wherein one end of a resistance change-type molecular chain constituting the organic molecule layer is chemically bonded with the first electrode, and an air gap exists between the other end of the resistance change-type molecular chain and the second electrode.Type: GrantFiled: December 22, 2014Date of Patent: October 27, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Tetsuya Hayashi, Hideyuki Nishizawa
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Patent number: 9142562Abstract: A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a block insulating film; an organic molecular layer, which is formed between the semiconductor layer and the block insulating film, and provided with a first organic molecular film on the semiconductor layer side containing first organic molecules and a second organic molecular film on the block insulating film side containing second organic molecules, and in which the first organic molecule has a charge storing unit and the second organic molecule is an amphiphilic organic molecule; and a control gate electrode formed on the block insulating film.Type: GrantFiled: July 3, 2013Date of Patent: September 22, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Shigeki Hattori, Masaya Terai, Hideyuki Nishizawa, Koji Asakawa, Yoshiaki Fukuzumi
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Publication number: 20150263125Abstract: A nonvolatile semiconductor memory device includes a semiconductor layer, a control gate electrode, and an organic molecular layer provided between the semiconductor layer and the control gate electrode and having an organic molecule including a porphyrin structure with oxymetal or chlorometal at the center.Type: ApplicationFiled: March 9, 2015Publication date: September 17, 2015Applicant: Kabushiki Kaisha ToshibaInventors: Masaya TERAI, Tsukasa TADA, Hideyuki NISHIZAWA, Shigeki HATTORI, Koji ASAKAWA
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Publication number: 20150263127Abstract: A nonvolatile semiconductor memory device includes a semiconductor layer, a control gate electrode, and an organic molecular layer provided between the semiconductor layer and the control gate electrode and having an organic molecule including a porphyrin structure.Type: ApplicationFiled: March 16, 2015Publication date: September 17, 2015Applicant: Kabushiki Kaisha ToshibaInventors: Shigeki HATTORI, Masaya TERAI, Hideyuki NISHIZAWA, Koji ASAKAWA, Yoshiaki FUKUZUMI
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Patent number: 9136405Abstract: The present invention provides a light transmission type solar cell excellent in both power generation efficiency and light transparency, and also provides a method for producing that solar cell. The solar cell of the present invention comprises a photoelectric conversion layer, a light-incident side electrode layer, and a counter electrode layer. The incident side electrode layer is provided with plural openings bored through the layer, and has a thickness of 10 nm to 200 nm. Each of the openings occupies an area of 80 nm2 to 0.8 ?m2, and the opening ratio is in the range of 10% to 66%. The transmittance of the whole cell is 5% or more at 700 nm wavelength. The incident side electrode layer can be formed by etching fabrication with a stamper. In the etching fabrication, a mono-particle layer of fine particles or a dot pattern formed by self-assembled block copolymer can be used as a mask.Type: GrantFiled: February 4, 2010Date of Patent: September 15, 2015Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Eishi Tsutsumi, Kumi Masunaga, Ryota Kitagawa, Tsutomu Nakanishi, Akira Fujimoto, Hideyuki Nishizawa, Koji Asakawa
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Publication number: 20150236171Abstract: An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including variable-resistance molecular chains or charge-storage molecular chains, the variable-resistance molecular chains or the charge-storage molecular chains having electron-withdrawing substituents.Type: ApplicationFiled: May 4, 2015Publication date: August 20, 2015Applicant: Kabushiki Kaisha ToshibaInventors: Hideyuki NISHIZAWA, Shigeki Hattori, Masaya Terai, Satoshi Mikoshiba, Koji Asakawa, Tsukasa Tada
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Publication number: 20150228335Abstract: An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including charge-storage molecular chains or variable-resistance molecular chains, the charge-storage molecular chains or the variable-resistance molecular chains including fused polycyclic groups.Type: ApplicationFiled: April 24, 2015Publication date: August 13, 2015Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hideyuki NISHIZAWA, Reiko YOSHIMURA, Tsukasa TADA, Shigeki HATTORI, Masaya TERAI, Satoshi MIKOSHIBA, Koji ASAKAWA
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Patent number: 9054324Abstract: An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including variable-resistance molecular chains or charge-storage molecular chains, the variable-resistance molecular chains or the charge-storage molecular chains having electron-withdrawing substituents.Type: GrantFiled: September 10, 2013Date of Patent: June 9, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Hideyuki Nishizawa, Shigeki Hattori, Masaya Terai, Satoshi Mikoshiba, Koji Asakawa, Tsukasa Tada
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Patent number: 9047941Abstract: An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including charge-storage molecular chains or variable-resistance molecular chains, the charge-storage molecular chains or the variable-resistance molecular chains including fused polycyclic groups.Type: GrantFiled: March 21, 2012Date of Patent: June 2, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Hideyuki Nishizawa, Reiko Yoshimura, Tsukasa Tada, Shigeki Hattori, Masaya Terai, Satoshi Mikoshiba, Koji Asakawa
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Publication number: 20150108421Abstract: An organic molecular memory for controlling a current flowing through a memory cell and achieving stable operation and high degree of reliability is provided. The organic molecular memory includes a first electrode, a second electrode made of a material different from the first electrode, and an organic molecule layer provided between the first electrode and the second electrode, wherein one end of a resistance change-type molecular chain constituting the organic molecule layer is chemically bonded with the first electrode, and an air gap exists between the other end of the resistance change-type molecular chain and the second electrode.Type: ApplicationFiled: December 22, 2014Publication date: April 23, 2015Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Tetsuya HAYASHI, Hideyuki NISHIZAWA
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Patent number: 9000504Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.Type: GrantFiled: December 13, 2013Date of Patent: April 7, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Shigeki Hattori, Reika Ichihara, Masaya Terai, Hideyuki Nishizawa, Tsukasa Tada, Koji Asakawa, Hiroyuki Fuke, Satoshi Mikoshiba, Yoshiaki Fukuzumi, Hideaki Aochi