Patents by Inventor Hideyuki Nishizawa
Hideyuki Nishizawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150083988Abstract: An organic molecular memory in an embodiment includes a first conducive layer, a second conductive layer, and an organic molecular layer provided between the first conductive layer and the second conductive layer, the organic molecular layer having an organic molecule, the organic molecule having a linker group bonded to the first conductive layer, a ? conjugated chain bonded to the linker group, and a phenyl group bonded to the ? conjugated chain opposite to the linker group and facing the second conductive layer, the ? conjugated chain including electron-accepting groups or electron-donating groups arranged in line asymmetry with respect to a bonding direction of the ? conjugated chain, the phenyl group having substituents R0, R1, R2, R3, and R4 as shown in the following formula, the substituent R0 being an electron-accepting group or an electron-donating group.Type: ApplicationFiled: August 11, 2014Publication date: March 26, 2015Applicant: Kabushiki Kaisha ToshibaInventors: Yusuke TANAKA, Hideyuki Nishizawa, Shigeki Hattori, Koji Asakawa
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Publication number: 20150069337Abstract: An organic molecular device of an embodiment includes a first and a second conductive layers and an organic molecular layer having an organic molecule provided between the first and the second conductive layer. The organic molecule includes a one-dimensional or quasi one-dimensional ?-conjugated system chain having either a first aromatic ring or a second aromatic ring. The first aromatic ring has one or more substituents that are an electron withdrawing group, each substituent of the first aromatic ring is independently selected from the group consisting of the electron withdrawing group and hydrogen, the second aromatic ring has one or more substituents that are an electron releasing group, and each substituent of the second aromatic ring is independently selected from the group consisting of the electron releasing group and hydrogen. The first aromatic ring or the second aromatic ring exist in an unbalanced manner in the ?-conjugated system chain.Type: ApplicationFiled: March 4, 2014Publication date: March 12, 2015Applicant: Kabushiki Kaisha ToshibaInventors: Hideyuki NISHIZAWA, Shigeki HATTORI, Yusuke TANAKA, Koji ASAKAWA
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Patent number: 8975622Abstract: An organic molecular memory for controlling a current flowing through a memory cell and achieving stable operation and high degree of reliability is provided. The organic molecular memory includes a first electrode, a second electrode made of a material different from the first electrode, and an organic molecule layer provided between the first electrode and the second electrode, wherein one end of a resistance change-type molecular chain constituting the organic molecule layer is chemically bonded with the first electrode, and an air gap exists between the other end of the resistance change-type molecular chain and the second electrode.Type: GrantFiled: September 24, 2013Date of Patent: March 10, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Tetsuya Hayashi, Hideyuki Nishizawa
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Publication number: 20150048438Abstract: A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film formed on the semiconductor layer; an organic molecular layer that is formed on the tunnel insulating film, and includes first organic molecules and second organic molecules having a smaller molecular weight than the first organic molecules, the first organic molecules each including a first alkyl chain or a first alkyl halide chain having one end bound to the tunnel insulating film, the first organic molecules each including a charge storage portion bound to the other end of the first alkyl chain or the first alkyl halide chain, the second organic molecules each including a second alkyl chain or a second alkyl halide chain having one end bound to the tunnel insulating film; a block insulating film formed on the organic molecular layer; and a control gate electrode formed on the block insulating film.Type: ApplicationFiled: October 16, 2014Publication date: February 19, 2015Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Masaya TERAI, Shigeki Hattori, Hideyuki Nishizawa, Koji Asakawa, Tsukasa Tada
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Publication number: 20150044835Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.Type: ApplicationFiled: September 25, 2014Publication date: February 12, 2015Applicant: Kabushiki Kaisha ToshibaInventors: Shigeki Hattori, Reika Ichihara, Masaya Terai, Hideyuki Nishizawa, Tsukasa Tada, Koji Asakawa, Hiroyuki Fuke, Satoshi Mikoshiba, Yoshiaki Fukuzumi, Hideaki Aochi
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Publication number: 20150035045Abstract: A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film that is formed on the semiconductor layer and includes a first organic molecular film including first organic molecules each having an alkyl molecular chain as the main chain; a charge storage layer formed on the tunnel insulating film, the charge storage layer being made of an inorganic material; a block insulating film formed on the charge storage layer; and a control gate electrode formed on the block insulating film.Type: ApplicationFiled: October 20, 2014Publication date: February 5, 2015Applicant: Kabushiki Kaisha ToshibaInventors: Misako MOROTA, Hideyuki NISHIZAWA, Masaya TERAI, Shigeki HATTORI, Koji ASAKAWA
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Patent number: 8896052Abstract: A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film that is formed on the semiconductor layer and includes a first organic molecular film including first organic molecules each having an alkyl molecular chain as the main chain; a charge storage layer formed on the tunnel insulating film, the charge storage layer being made of an inorganic material; a block insulating film formed on the charge storage layer; and a control gate electrode formed on the block insulating film.Type: GrantFiled: December 26, 2012Date of Patent: November 25, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Misako Morota, Hideyuki Nishizawa, Masaya Terai, Shigeki Hattori, Koji Asakawa
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Patent number: 8890234Abstract: A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film formed on the semiconductor layer; an organic molecular layer that is formed on the tunnel insulating film, and includes first organic molecules and second organic molecules having a smaller molecular weight than the first organic molecules, the first organic molecules each including a first alkyl chain or a first alkyl halide chain having one end bound to the tunnel insulating film, the first organic molecules each including a charge storage portion bound to the other end of the first alkyl chain or the first alkyl halide chain, the second organic molecules each including a second alkyl chain or a second alkyl halide chain having one end bound to the tunnel insulating film; a block insulating film formed on the organic molecular layer; and a control gate electrode formed on the block insulating film.Type: GrantFiled: December 20, 2012Date of Patent: November 18, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Masaya Terai, Shigeki Hattori, Hideyuki Nishizawa, Koji Asakawa, Tsukasa Tada
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Publication number: 20140231898Abstract: A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a block insulating film; an organic molecular layer, which is formed between the semiconductor layer and the block insulating film, and provided with a first organic molecular film on the semiconductor layer side containing first organic molecules and a second organic molecular film on the block insulating film side containing second organic molecules, and in which the first organic molecule has a charge storing unit and the second organic molecule is an amphiphilic organic molecule; and a control gate electrode formed on the block insulating film.Type: ApplicationFiled: July 3, 2013Publication date: August 21, 2014Inventors: Shigeki HATTORI, Masaya Terai, Hideyuki Nishizawa, Koji Asakawa, Yoshiaki Fukuzumi
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Patent number: 8809846Abstract: An organic molecular memory of an embodiment includes: a first conductive layer; a second conductive layer; and an organic molecular layer that is provided between the first conductive layer and the second conductive layer, and contains an organic molecule selected from a group of molecules that simultaneously satisfy the following conditions (I) and (II) in a molecular system having a molecular frame with a ?-electron system spreading along the molecular axis: (I) one of the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) is delocalized along the molecular axis, and the other one is localized with respect to the molecular axis; and (II) the value of the energy level of the highest occupied molecular orbital (HOMO) is ?5.75 eV or higher.Type: GrantFiled: September 4, 2012Date of Patent: August 19, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Tsukasa Tada, Hideyuki Nishizawa
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Publication number: 20140097485Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.Type: ApplicationFiled: December 13, 2013Publication date: April 10, 2014Applicant: Kabushiki Kaisha ToshibaInventors: Shigeki HATTORI, Reika ICHIHARA, Masaya TERAI, Hideyuki NISHIZAWA, Tsukasa TADA, Koji ASAKAWA, Hiroyuki FUKE, Satoshi MIKOSHIBA, Yoshiaki FUKUZUMI, Hideaki AOCHI
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Publication number: 20140061763Abstract: A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film that is formed on the semiconductor layer and includes a first organic molecular film including first organic molecules each having an alkyl molecular chain as the main chain; a charge storage layer formed on the tunnel insulating film, the charge storage layer being made of an inorganic material; a block insulating film formed on the charge storage layer; and a control gate electrode formed on the block insulating film.Type: ApplicationFiled: December 26, 2012Publication date: March 6, 2014Inventors: Misako Morota, Hideyuki Nishizawa, Masaya Terai, Shigeki Hattori, Koji Asakawa
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Publication number: 20140061762Abstract: A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film formed on the semiconductor layer; an organic molecular layer that is formed on the tunnel insulating film, and includes first organic molecules and second organic molecules having a smaller molecular weight than the first organic molecules, the first organic molecules each including a first alkyl chain or a first alkyl halide chain having one end bound to the tunnel insulating film, the first organic molecules each including a charge storage portion bound to the other end of the first alkyl chain or the first alkyl halide chain, the second organic molecules each including a second alkyl chain or a second alkyl halide chain having one end bound to the tunnel insulating film; a block insulating film formed on the organic molecular layer; and a control gate electrode formed on the block insulating film.Type: ApplicationFiled: December 20, 2012Publication date: March 6, 2014Inventors: Masaya Terai, Shigeki Hattori, Hideyuki Nishizawa, Koji Asakawa, Tsukasa Tada
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Publication number: 20140021438Abstract: An organic molecular memory for controlling a current flowing through a memory cell and achieving stable operation and high degree of reliability is provided. The organic molecular memory includes a first electrode, a second electrode made of a material different from the first electrode, and an organic molecule layer provided between the first electrode and the second electrode, wherein one end of a resistance change-type molecular chain constituting the organic molecule layer is chemically bonded with the first electrode, and an air gap exists between the other end of the resistance change-type molecular chain and the second electrode.Type: ApplicationFiled: September 24, 2013Publication date: January 23, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Tetsuya HAYASHI, Hideyuki Nishizawa
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Publication number: 20140024165Abstract: A solar cell having on a light incident surface side an electrode with both low resistivity and high transparency to promote efficient excitation of carriers using inexpensive materials. The solar cell includes a photoelectric conversion layer, a first electrode layer arranged on the light incident surface side, and a second electrode layer arranged opposed to the first electrode layer. The first electrode layer has a thickness in the range of 10 to 200 nm, and plural penetrating openings, each of which occupies an area in the range of 80 nm2 to 0.8 ?m2, and has an aperture ratio in the range 10 to 66%. The first electrode layer can be produced by etching using an etching mask in the form of a single particle layer of fine particles, or of a dot pattern formed by self-assembly of a block copolymer, or of a stamper.Type: ApplicationFiled: September 27, 2013Publication date: January 23, 2014Applicant: Kabushiki Kaisha ToshibaInventors: Kumi MASUNAGA, Akira Fujimoto, Tsutomu Nakanishi, Eishi Tsutsumi, Ryota Kitagawa, Koji Asakawa, Hideyuki Nishizawa
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Patent number: 8633526Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.Type: GrantFiled: September 16, 2011Date of Patent: January 21, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Shigeki Hattori, Reika Ichihara, Masaya Terai, Hideyuki Nishizawa, Tsukasa Tada, Koji Asakawa, Hiroyuki Fuke, Satoshi Mikoshiba, Yoshiaki Fukuzumi, Hideaki Aochi
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Publication number: 20140008601Abstract: An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including variable-resistance molecular chains or charge-storage molecular chains, the variable-resistance molecular chains or the charge-storage molecular chains having electron-withdrawing substituents.Type: ApplicationFiled: September 10, 2013Publication date: January 9, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hideyuki NISHIZAWA, Shigeki HATTORI, Masaya TERAI, Satoshi MIKOSHIBA, Koji ASAKAWA, Tsukasa TADA
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Patent number: 8575587Abstract: A storage device includes: a plurality of first electrode wirings; a plurality of second electrode wirings which cross the first electrode wirings; a via plug which is formed between the second electrode wiring and the two adjacent first electrode wirings, and in which a maximum diameter of a bottom surface opposing the first electrode wirings in a direction vertical to a direction in which the first electrode wirings stretch is smaller than a length corresponding to a pitch of the first electrode wiring plus a width of the first electrode wirings; a first storage element which is formed between the via plug and one of the two first electrode wirings; and a second storage element which is formed between the via plug and the other one of the two first electrode wirings.Type: GrantFiled: September 20, 2011Date of Patent: November 5, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Koji Asakawa, Shigeki Hattori, Hideyuki Nishizawa, Satoshi Mikoshiba, Reika Ichihara, Masaya Terai
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Patent number: 8552537Abstract: A semiconductor device according to an embodiment, includes a dielectric film and an Si semiconductor part. The dielectric film is formed by using one of oxide, nitride and oxynitride. The Si semiconductor part is arranged below the dielectric film, having at least one element of sulfur (S), selenium (Se), and tellurium (Te) present in an interface with the dielectric film, and formed by using silicon (Si).Type: GrantFiled: August 23, 2011Date of Patent: October 8, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Tatsuo Shimizu, Satoshi Itoh, Hideyuki Nishizawa
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Publication number: 20130248962Abstract: A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; an organic molecular layer formed on the semiconductor layer, the organic molecular layer including a plurality of organic molecules, each of the organic molecules includes a tunnel insulating unit of alkyl chain having one end bonded to the semiconductor layer, a charge storing unit, and a bonding unit configured to bond the other end of the alkyl chain to the charge storing unit; a block insulating film formed on the organic molecular layer; and a gate electrode formed on the block insulating film.Type: ApplicationFiled: September 4, 2012Publication date: September 26, 2013Applicant: Kabushiki Kaisha ToshibaInventors: Misako Morota, Hideyuki Nishizawa, Shigeki Hattori, Masaya Terai, Koji Asakawa